Patent Grant
9450160
1. Field of the Invention
The present invention relates to a reflecting resin sheet, a light emitting diode device, and a producing method thereof, to be specific, to a producing method of a light emitting diode device, a reflecting resin sheet used in the producing method, and a light emitting diode device obtained by the producing method of the light emitting diode device.
2. Description of Related Art
In recent years, as a light emitting device that is capable of emitting high-energy light, a white light emitting device has been known. In the white light emitting device, for example, a diode board; an LED (light emitting diode) laminated thereon, emitting blue light; a phosphor layer that can convert the blue light into yellow light and covers the LED; and an encapsulating layer that encapsulates the LED are provided. The white light emitting device emits high-energy white light by color mixing of the blue light emitted from the LED, which is encapsulated by the encapsulating layer and to which electric power is supplied from the diode board, transmitting through the encapsulating layer and the phosphor layer, and the yellow light that is converted in wavelength from a part of the blue light in the phosphor layer.
As a method for producing the white light emitting device, for example, the following method has been proposed (ref: for example, Japanese Unexamined Patent Publication No. 2005-191420).
The proposed method is as follows. That is, a base, which has a board portion and a white reflecting frame portion protruding from the circumference portion thereof toward the upper side, is first formed. Next, a semiconductor light emitting element is subjected to a wire bonding in a bottom portion of a concave portion, which is formed at the center of the board portion by the reflecting frame portion, so as to be spaced apart from the inner side of the reflecting frame portion.
Next, a mixture of a phosphor and an epoxy resin in a liquid state is filled in the concave portion by application, subsequently the phosphor is spontaneously precipitated in the bottom portion of the concave portion, and then the epoxy resin is heat cured.
In the white light emitting device obtained by the method proposed in Japanese Unexamined Patent Publication No. 2005-191420, the phosphor layer (a wavelength conversion layer) that contains the phosphor formed by a precipitation at high concentrations is defined in a region at the upper side of the semiconductor light emitting element and an encapsulating portion that contains the epoxy resin at high concentrations is defined in a region at the upper side of the phosphor layer.
In the white light emitting device, the semiconductor light emitting element radially emits the blue light. Of the emitted blue light, a part thereof emitted from the semiconductor light emitting element toward the upper side is converted into the yellow light in the phosphor layer and the remaining light transmits through the phosphor layer. The blue light emitted from the semiconductor light emitting element toward the side is reflected at the reflecting frame portion and then toward the upper side. The white light emitting device in Japanese Unexamined Patent Publication No. 2005-191420 emits the white light by color mixing of the blue light and the yellow light.
However, in the white light emitting device obtained by the producing method in Japanese Unexamined Patent Publication No. 2005-191420, there is a disadvantage that the semiconductor light emitting element is spaced apart from the reflecting frame portion, so that a part of the light emitted from the semiconductor light emitting element toward the side is absorbed in the encapsulating portion before being reflected at the reflecting frame portion and as a result, extraction efficiency of the light is reduced.
It is an object of the present invention to provide a light emitting diode device that is capable of improving extraction efficiency of light, a producing method thereof, and a reflecting resin sheet used in the producing method.
A reflecting resin sheet of the present invention, for providing a reflecting resin layer at the side of a light emitting diode element, includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate, wherein the reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.
In the reflecting resin sheet of the present invention, it is preferable that at one surface in the thickness direction of the release substrate, a portion in which the reflecting resin layer is provided is dented toward the other side in the thickness direction.
The method for producing a reflecting resin sheet of the present invention includes the steps of preparing the above-described reflecting resin sheet by providing a reflecting resin layer on one surface in a thickness direction of a release substrate, providing a light emitting diode element on one surface in the thickness direction of a diode board, and laminating the reflecting resin sheet on the diode board so that the reflecting resin layer is in close contact with the side surface of the light emitting diode element.
In the method for producing the light emitting diode device of the present invention, it is preferable that in the step of laminating the reflecting resin sheet on the diode board, an exposed portion that is exposed from the reflecting resin layer in the release substrate is allowed to be in close contact with one surface in the thickness direction of the light emitting diode element.
In the method for producing the light emitting diode device of the present invention, it is preferable that the step of preparing the reflecting resin sheet includes the steps of disposing a mask where a pattern including a plurality of covering portions disposed at spaced intervals to each other so as to correspond to the exposed portion and a bridge portion that is disposed between the covering portions is formed on one side in the thickness direction of the release substrate so that the covering portion is opposed to the exposed portion, forming the reflecting resin layer in an opposite pattern to that of the covering portion by applying a reflecting resin composition for forming the reflecting resin layer onto the release substrate via the mask, and removing the mask.
The method for producing a light emitting diode device of the present invention includes the steps of providing a light emitting diode element on one surface in a thickness direction of a base member, providing a reflecting resin layer, on one surface in the thickness direction of the base member, at the side of the light emitting diode element, and allowing a concave portion of a pressing member that is formed to be dented toward the other side in the thickness direction corresponding to the reflecting resin layer to press the reflecting resin layer, so that the reflecting resin layer is in close contact with the side surface of the light emitting diode element.
In the method for producing the light emitting diode device of the present invention, it is preferable that the step of providing the reflecting resin layer includes the steps of disposing a mask where a pattern including a plurality of covering portions disposed at spaced intervals to each other so as to correspond to the light emitting diode element and a bridge portion that is disposed between the covering portions is formed on one side in the thickness direction of the base member so that the covering portion is opposed to the light emitting diode element, forming the reflecting resin layer in an opposite pattern to that of the covering portion by applying a reflecting resin composition for forming the reflecting resin layer onto the base member via the mask, and removing the mask.
A light emitting diode device of the present invention includes a diode board, a light emitting diode element provided on one surface in a thickness direction of the diode board, and a reflecting resin layer that is in close contact with the side surface of the light emitting diode element.
In the light emitting diode device of the present invention, it is preferable that the reflecting resin layer is formed so that the thickness thereof is thicker than that of the light emitting diode element.
In the light emitting diode device of the present invention, it is preferable that the light emitting diode device further includes a phosphor layer formed on one surface in the thickness direction of the light emitting diode element.
According to the method for producing the light emitting diode device of the present invention using the reflecting resin sheet of the present invention, the reflecting resin sheet is laminated on the diode board so that the reflecting resin layer is in close contact with the side surface of the light emitting diode element.
Therefore, in the light emitting diode device of the present invention obtained by the above-described method, light emitted from the light emitting diode element is reflected by the reflecting resin layer before being absorbed by another member.
As a result, the extraction efficiency of the light can be improved.
(a) illustrating a step of preparing a reflecting resin sheet,
(b) illustrating a step of disposing the reflecting resin sheet on a diode board, and
(c) illustrating a step of allowing an exposed portion to be in contact with the upper surface of a light emitting diode element.
(d) illustrating a step of pressing the reflecting resin sheet,
(e) illustrating a step of peeling off a first release substrate, and
(f) illustrating a step of forming a phosphor layer.
(a) illustrating a step of preparing the first release substrate,
(b) illustrating a step of disposing a mask on the first release substrate, and
(c) illustrating a step of applying a reflecting resin composition onto the first release substrate via the mask and subsequently, removing the mask.
(a) illustrating a step of providing a reflecting resin layer in the concave portion in the first release substrate,
(b) illustrating a step of disposing the reflecting resin sheet on the diode board, and
(c) illustrating a step of laminating the reflecting resin sheet on the diode board to be pressed.
(d) illustrating a step of peeling off the first release substrate and
(e) illustrating a step of forming the phosphor layer.
(a) illustrating a step of providing the light emitting diode element in the diode board,
(b) illustrating a step of providing the reflecting resin layer on the diode board, and
(c) illustrating a step of pressing the reflecting resin layer by a pressing board.
(d) illustrating a step of removing the pressing board and
(e) illustrating a step of providing the phosphor layer.
In
A plurality of the light emitting diode devices 1 are provided at spaced intervals to each other in a plane direction (to be specific, a right-left direction of the paper surface and an up-down direction of the paper surface in
The diode board 2 is formed into a generally flat plate shape. To be specific, the diode board 2 is formed of a laminated board in which a conductive layer, as a circuit pattern, is laminated on an insulating board. The insulating board is formed of, for example, a silicon board, a ceramic board, a polyimide resin board, or the like. Preferably, the insulating board is formed of the ceramic board, to be specific, a sapphire (Al2O3) board. The conductive layer is formed of, for example, a conductor such as gold, copper, silver, or nickel. The conductors can be used alone or in combination.
The conductive layer includes a terminal 6.
The terminals 6 are formed at spaced intervals in the plane direction on the upper surface of the insulating board and are formed into a pattern corresponding to an electrode portion 8 to be described later. Although not shown, the terminal 6 is electrically connected to an electric power supply portion via the conductive layer.
The light emitting diode element 3 is provided on the upper surface (one surface in the thickness direction) of the diode board 2 and is formed into a generally rectangular shape in plane view. A plurality of the light emitting diode elements 3 are, on the upper surface of one piece of the diode board 2, provided at spaced intervals to each other in the plane direction.
The light emitting diode element 3 includes a light semiconductor layer 7 and the electrode portion 8 that is formed on the lower surface thereof.
The light semiconductor layer 7 is formed into a generally rectangular shape in plane view corresponding to the outer shape of the light emitting diode element 3 and is formed into a generally rectangular shape in sectional view that is long in the plane direction.
Although not shown, for example, the light semiconductor layer 7 includes a buffer layer, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer that are sequentially laminated in the thickness direction. The light semiconductor layer 7 is formed of a known semiconductor material and is formed by a known growth method such as an epitaxial growth method. The light semiconductor layer 7 has a thickness in the range of, for example, 0.1 to 500 μm, or preferably 0.2 to 200 μm.
The electrode portion 8 is electrically connected to the light semiconductor layer 7 and is formed so as to be included in the light semiconductor layer 7 when projected in the thickness direction. The electrode portion 8 includes, for example, an anode electrode that is connected to the P-type semiconductor layer and a cathode electrode that is formed in the N-type semiconductor layer.
The electrode portion 8 is formed of a known conductive material and has a thickness in the range of, for example, 10 to 1000 nm.
The reflecting resin layer 4 is, on the upper surface of the diode board 2, formed in a region (a board-side reflecting region) 10 other than a region (a board-side diode region) 9 where the light emitting diode elements 3 are formed in plane view.
The board-side reflecting region 10 is, around the board-side diode region 9, a region that is defined at the outer side thereof by the board-side diode region 9. The board-side reflecting region 10 is formed of a region extending in a front-rear direction and a region extending in the right-left direction, and is formed into a generally grid shape in plane view where the regions are perpendicular (intersectional) to each other.
The reflecting resin layer 4 is provided at the outer side of the light emitting diode element 3, to be specific, at the both outer sides in the right-left direction and the both outer sides in the front-rear direction of each of the light emitting diode elements 3.
As shown in
As shown in
As shown in
That is, in the reflecting resin layer 4, the upper surface of the resin concave portion 11 is formed into a flat state and a portion formed at the circumference end portion of the light emitting diode element 3 is formed to be higher than the resin concave portion 11.
The above-described reflecting resin layer 4 contains, for example, a light reflecting component. To be specific, the reflecting resin layer 4 is formed of a reflecting resin composition that contains a resin and the light reflecting component.
An example of the resin includes a thermosetting resin such as thermosetting silicone resin, epoxy resin, thermosetting polyimide resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, diallyl phthalate resin, and thermosetting urethane resin. Preferably, the thermosetting silicone resin or the epoxy resin is used.
The light reflecting component is, for example, a white compound. To be specific, an example of the white compound includes a white pigment.
An example of the white pigment includes a white inorganic pigment. Examples of the white inorganic pigment include an oxide such as titanium oxide, zinc oxide, and zirconium oxide; a carbonate such as white lead (lead carbonate) and calcium carbonate; and a clay mineral such as kaolin (kaolinite).
As the white inorganic pigment, preferably, the oxide is used or more preferably, the titanium oxide is used.
The titanium oxide can have characteristics such as a high degree of whiteness, a high light reflectivity, excellent hiding characteristics (hiding power), excellent coloring characteristics (coloring power), a high dispersibility, an excellent weather resistance, and a high chemical stability.
To be specific, the titanium oxide is TiO2 (titanium oxide (IV), titanium dioxide).
A crystal structure of the titanium oxide is not particularly limited. For example, the crystal structure thereof is rutile, brookite (pyromelane), anatase (octahedrite), or the like. Preferably, the crystal structure thereof is rutile.
A crystal system of the titanium oxide is not particularly limited. For example, the crystal system thereof is a tetragonal system, an orthorhombic system, or the like. Preferably, the crystal system thereof is the tetragonal system.
When the crystal structure and the crystal system of the titanium oxide are rutile and the tetragonal system, respectively, it is possible to effectively prevent a reduction of the reflectance with respect to light (to be specific, visible light, among all, the light around the wavelength of 450 nm) even in a case where the reflecting resin layer 4 is exposed to a high temperature for a long time.
The light reflecting component is in the form of a particle. The shape thereof is not limited and examples of the shape thereof include, for example, a sphere shape, a plate shape, and a needle shape. An average value of the maximum length (in a case of the sphere shape, the average particle size) of the light reflecting component is in the range of, for example, 1 to 1000 nm. The average value of the maximum length is measured by using a laser diffraction scattering particle size analyzer.
The mixing ratio of the light reflecting component per 100 parts by mass of the resin is, for example, 0.5 to 90 parts by mass, or preferably 1.5 to 70 parts by mass from the viewpoint of the coloring characteristics, the light reflectivity, and handling ability of the reflecting resin composition.
The above-described light reflecting component is uniformly dispersed and mixed into the resin.
In addition, a filler can further be added into the reflecting resin composition. That is, the filler can be used in combination with the light reflecting component (to be specific, the white pigment).
An example of the filler includes a known filler, except for the above-described white pigment. To be specific, an inorganic filler is used. Examples thereof include silica powder, talc powder, alumina powder, aluminum nitride powder, and silicon nitride powder.
Preferably, as the filler, the silica powder is used from the viewpoint of reducing a linear expansion coefficient of the reflecting resin layer 4.
Examples of the silica powder include fused silica powder and crystalline silica powder. Preferably, the fused silica powder (that is, silica glass powder) is used.
Examples of the shape of the filler include, for example, a sphere shape, a plate shape, and a needle shape. Preferably, the sphere shape is used from the viewpoint of excellent filling characteristics and fluidity.
Therefore, preferably, the fused silica powder in a sphere shape is used as the silica powder.
The average value of the maximum length (in a case of the sphere shape, the average particle size) of the filler is in the range of, for example, 5 to 60 μm, or preferably 15 to 45 μm. The average value of the maximum length is measured by using the laser diffraction scattering particle size analyzer.
The addition ratio of the filler is adjusted so that the total amount of the filler and the light reflecting component per 100 parts by mass of the resin is, for example, 10 to 80 parts by mass. And the addition ratio of the filler is adjusted so that the total amount of the filler and the light reflecting component per 100 parts by mass of the resin is preferably 25 to 75 parts by mass, or more preferably 40 to 60 parts by mass from the view point of reducing the linear expansion coefficient and ensuring the fluidity.
The above-described resin, light reflecting component, and filler, which is added as required, are blended to be uniformly mixed, so that the reflecting resin composition is prepared.
The reflecting resin composition is prepared in a B-stage state.
The reflecting resin composition is formed, for example, in a state of liquid or semi-solid and has a kinetic viscosity in the range of, for example, 10 to 30 mm2/s.
In this way, the outer side surfaces of the light emitting diode element 3 are encapsulated by the reflecting resin layer 4.
At the lower side of the light semiconductor layer 7, a lower space 12 (ref:
As shown in
The phosphor layer 5 is formed on the entire surface of the upper surface (one surface in the thickness direction) of the light emitting diode element 3 and is formed into the same pattern as that of the outer shape of the light emitting diode element 3 when projected in the thickness direction.
The phosphor layer 5 is formed of, for example, a phosphor composition that contains a phosphor.
Preferably, the phosphor composition contains the phosphor and the resin.
An example of the phosphor includes a yellow phosphor that is capable of converting blue light into yellow light. An example of the phosphor includes a phosphor obtained by doping a metal atom such as cerium (Ce) or europium (Eu) into a composite metal oxide, a metal sulfide, or the like.
To be specific, examples of the phosphor include garnet type phosphor having a garnet type crystal structure such as Y3Al5O12:Ce (YAG (yttrium aluminum garnet):Ce), (Y, Gd)3Al5O12:Ce, Tb3Al3O12:Ce, Ca3Sc2Si3O12:Ce, and Lu2CaMg2(Si, Ge)3O12:Ce; silicate phosphor such as (Sr, Ba)2SiO4:Eu, Ca3SiO4Cl2:Eu, Sr3SiO5:Eu, Li2SrSiO4:Eu, and Ca3Si2O7:Eu; aluminate phosphor such as CaAl12O19:Mn and SrAl2O4:Eu; sulfide phosphor such as ZnS:Cu,Al, CaS:Eu, CaGa2S4:Eu, and SrGa2S4:Eu; oxynitride phosphor such as CaSi2O2N2:Eu, SrSi2O2N2:Eu, BaSi2O2N2:Eu, and Ca-α-SiAlON; nitride phosphor such as CaAlSiN3:Eu and CaSi5N8:Eu; and fluoride-based phosphor such as K2SiF6:Mn and K2TiF6:Mn. Preferably, garnet type phosphor is used, or more preferably, Y3Al5O12:Ce (YAG) is used.
The phosphors can be used alone or in combination of two or more.
The mixing ratio of the phosphor is, for example, 1 to 50 mass %, or preferably 5 to 30 mass % with respect to the phosphor composition. The mixing ratio of the phosphor is, for example, 1 to 100 parts by mass, or preferably 5 to 40 parts by mass per 100 parts by mass of a resin.
The resin is a matrix in which the phosphor is dispersed, including, for example, transparent resins such as silicone resin, epoxy resin, and acrylic resin. Preferably, the silicone resin is used from the viewpoint of durability.
The silicone resin has, in its molecule, a main chain mainly composed of the siloxane bond (—Si—O—Si—) and a side chain, which is bonded to silicon atoms (Si) of the main chain, composed of an organic group such as an alkyl group (for example, a methyl group and the like) or an alkoxyl group (for example, a methoxy group).
To be specific, examples of the silicone resin include dehydration condensation type silicone resin, addition reaction type silicone resin, peroxide curable silicone resin, moisture curable silicone resin, and curable silicone resin. Preferably, the addition reaction type silicone resin is used.
The silicone resin has a kinetic viscosity at 25° C. in the range of, for example, 10 to 30 mm2/s.
The resins can be used alone or in combination of two or more.
The mixing ratio of the resin is, for example, 50 to 99 mass %, or preferably 70 to 95 mass % with respect to the phosphor composition.
The phosphor and the resin are blended at the above-described mixing ratio and are stirred and mixed, so that the phosphor composition is prepared.
Next, a method for producing the above-described light emitting diode device 1 is described with reference to
In this method, as shown in
The reflecting resin sheet 13 is a transfer sheet for providing the reflecting resin layer 4 on the lateral sides of the light emitting diode element 3. The reflecting resin sheet 13 is formed into a pattern of being capable of being in close contact with the light emitting diode element 3 in a pressing to be described later (
The reflecting resin sheet 13 includes a first release substrate 14 as a release substrate and the reflecting resin layer 4 that is provided on the upper surface (one surface in the thickness direction) thereof.
The reflecting resin sheet 13 can be obtained by allowing the reflecting resin layer 4 to be provided on the upper surface of the first release substrate 14.
To provide the reflecting resin layer 4 on the upper surface of the first release substrate 14, as shown in
The first release substrate 14 is, for example, a release sheet (a release film) in a generally rectangular shape and the upper surface and the lower surface thereof are formed into a flat state.
The first release substrate 14 is formed of a resin material and the like such as a vinyl polymer including polyolefin (to be specific, polyethylene and polypropylene) and ethylene-vinyl acetate copolymer (EVA); a polyester including polyethylene terephthalate and polycarbonate; and a fluorine resin including polytetrafluoroethylene. The first release substrate 14 is also formed of a metal material such as iron, aluminum, or stainless steel.
The first release substrate 14 can also be formed of a thermal release sheet that can be easily peeled off from the reflecting resin layer 4 by being heated. As shown in phantom lines in
The supporting layer 15 is formed of, for example, a heat resistant resin such as polyester.
The pressure-sensitive adhesive layer 16 is formed of, for example, a thermally expandable pressure-sensitive adhesive and the like, which has adhesion under normal temperature (25° C.), and in which the adhesion is reduced (or lost) at the time of being heated.
A commercially available product can be used as the above-described thermal release sheet. To be specific, REVALPHA (a trade name, manufactured by NITTO DENKO CORPORATION) and the like can be used.
The thermal release sheet reliably supports the reflecting resin layer 4 by the supporting layer 15 via the pressure-sensitive adhesive layer 16 and is peeled off from the reflecting resin layer 4 due to a reduction in the adhesion of the pressure-sensitive adhesive layer 16 by the heating and thermal expansion performed thereafter.
The first release substrate 14 has a thickness in the range of, for example, 10 to 1000 μm.
Next, as shown in
As shown in
The frame portion 17 is formed into a generally rectangular frame shape in plane view. The frame portion 17 is formed to have a width that can support the covering portion 18 via the bridge portion 19 (a width capable of ensuring strength).
A plurality of the covering portions 18 are disposed at spaced intervals to each other so as to correspond to the above-described light emitting diode elements 3 (ref:
The outer shape of the covering portion 18 is formed into a similar shape (to be specific, a generally rectangular shape in plane view) having a size slightly larger than that of the light emitting diode element 3 in plane view. A maximum length L1 of the covering portion 18 is in the range of L2 (a maximum length of the light emitting diode element 3)+0.22 mm or less, or preferably L2+0.15 mm or less, and usually, for example, L2 or more and to be specific, in the range of, for example, 0.3 to 3 mm, or preferably 0.42 to 2.1 mm.
The bridge portion 19 is disposed between the frame portion 17 and the covering portion 18, and is also disposed between the covering portions 18 that are adjacent to each other in the plane direction. Each of the bridge portions 19 is formed into a generally X-shape in plane view and is, for example, disposed between four pieces of the covering portions 18 (18A, 18B, 18C, and 18D) that are adjacent to each other in the plane direction so as to connect the end portions thereof in the right-left direction and the front-rear direction.
The bridge portion 19 is, for example, formed of a linear member such as a wire. The bridge portion 19 is formed to have a width that is significantly narrow with respect to the maximum length L1 of the covering portion 18. To be specific, the width thereof is in the range of, for example, 100 μm or less, or preferably 50 μm or less, and usually, for example, 25 μm or more.
The mask 20 is formed of, for example, a metal material such as stainless steel and iron or a resin material such as polyethylene terephthalate. Preferably, the mask 20 is formed of the metal material.
The mask 20 is formed into the above-described pattern by, for example, a known pattern forming method such as an etching or a laser processing.
The mask 20 has a thickness in the range of, for example, 20 to 500 μm.
As shown in
Next, in this method, as shown in
In the application of the reflecting resin composition, for example, an application method such as printing and dispenser is used.
In this way, a reflecting film 22 made of the reflecting resin composition is formed on the upper surface of the first release substrate 14 in a pattern reverse to that of the mask 20. The reflecting film 22 is also formed on the upper surface of the mask 20.
Subsequently, as shown by the arrows in the phantom lines in
By pulling the mask 20 toward the upper side, the reflecting film 22 that is formed on the upper surface of the covering portion 18 is removed.
By the above-described pulling up of the mask 20, the reflecting film 22 around the bridge portion 19 (ref:
In this way, as shown in
The reflecting film 22 in the above-described pattern is heated (described later), so that the reflecting resin layer 4 in the above-described pattern in a B-stage state is obtained.
As referred in
In this way, the reflecting resin sheet 13 including the reflecting resin layer 4 and the first release substrate 14 is obtained.
Separately, in this method, as shown in the lower portion in
To be specific, the electrode portion 8 is electrically connected to the terminal 6 and the light emitting diode element 3 is flip-chip mounted (flip-chip mounting is also called flip mounting) on the diode board 2.
Next, in this method, as shown in
To be specific, the reflecting resin sheet 13 is first turned over upside down from the state shown in
On the upper surface of the first release substrate 14, a buffer sheet 26 is provided.
The buffer sheet 26 is a sheet (a cushion sheet) that buffers a pressing force so as not to allow the pressing force to non-uniformly apply to the light emitting diode element 3 in the pressing to be described next (ref: the arrow in
A buffer material for forming the buffer sheet 26 includes the same resin material as that for forming the first release substrate 14 described above. Preferably, the buffer sheet 26 is formed of vinyl polymer, or more preferably, the buffer sheet 26 is formed of EVA.
The buffer sheet 26 has a thickness in the range of, for example, 0.01 to 1 mm, or preferably 0.05 to 0.2 mm.
Next, in this method, as shown in
That is, as shown in
That is, both of the reflecting resin layer 4 and the light emitting diode element 3 are sandwiched between the first release substrate 14 and the diode board 2 in the thickness direction.
At the time of the contact described above, a minute side space 27 is formed between the reflecting resin layer 4 and the light emitting diode element 3 in the plane direction. The side space 27 is formed as a space that slightly separates the reflecting resin layer 4 from the light emitting diode element 3 in the plane direction.
Subsequently, as shown in the arrow in
To be specific, the reflecting resin sheet 13 with respect to the diode board 2 is pressed via the buffer sheet 26, for example, with a pressing machine or the like.
The pressure is in the range of, for example, 0.01 to 7 MPa, or preferably 0.05 to 4 MPa.
The above-described pressing can be performed together with heating as required. That is, hot pressing (to be specific, hot pressing in which the pressing is performed with a hot plate) can be performed.
The heating temperature is in the range of, for example, 25 to 140° C.
In this way, the exposed portion 25 of the first release substrate 14 is in close contact with the upper surface (one surface in the thickness direction) of the light emitting diode element 3.
With this, the reflecting resin layer 4 moves toward the side, to be specific, toward the outer side in the plane direction (the left side, the right side, the front side, and the rear side). Therefore, the side space 27 (ref:
In this way, the reflecting resin layer 4 is in close contact with the side surfaces (the left surface, the right surface, the front surface, and the rear surface) of the light emitting diode element 3.
The resin concave portion 11 is formed in the reflecting resin layer 4.
Next, as shown in
In this way, the reflecting resin layer 4 is transferred from the first release substrate 14 to the diode board 2.
Thereafter, the reflecting resin layer 4 in a B-stage state is heated to be cured.
The heating temperature is in the range of, for example, 40 to 150° C., or preferably 50 to 140° C. The heating time is in the range of, for example, 1 to 60 minutes, or preferably 3 to 20 minutes.
Next, as shown in
To provide the phosphor layer 5, for example, the above-described phosphor composition is first applied onto the upper surface of the light emitting diode element 3 in the above-described pattern to form a phosphor film (not shown).
Thereafter, the phosphor film is heated, for example, at 50 to 150° C. to be dried, so that the phosphor film is formed into the above-described pattern.
In this way, the light emitting diode device 1 including the diode board 2, the light emitting diode element 3 that is flip mounted on the diode board 2, the reflecting resin layer 4 that is in close contact with the side surfaces of the light emitting diode element 3, and the phosphor layer 5 that is provided on the upper surface of the light emitting diode element 3 is obtained as an assembly sheet.
Thereafter, as shown in dashed lines in
According to the above-described method, as shown in
Therefore, in the light emitting diode device 1 obtained by the above-described method, light emitted from the light emitting diode element 3 is reflected by the reflecting resin layer 4 before being absorbed by another member.
As a result, the extraction efficiency of the light can be improved.
In addition, in the embodiment in
As a result, it is possible to reliably prevent the light, which is emitted from the light emitting diode element 3 toward the upper side, from being reflected toward the lower side and/or the side by the reflecting resin layer 4, and the light is efficiently converted in wavelength by the phosphor layer 5, so that the extraction efficiency of the light can be improved.
In the embodiments in
On the other hand, when the reflecting resin layer 4 is formed using the mask 20, it is possible to collect the reflecting resin composition, which adheres onto the upper surface of the mask 20 at the time of pulling up the mask 20, as a material, so that the yield rate of the reflecting resin composition can be improved.
In the embodiments in
In that case, the second release substrate 33 is formed of the same release substrate as that of the first release substrate 14 described above.
In the above-described case, as referred in the numeral 33 shown in parentheses in
Thereafter, as referred in
Next, as shown in the dashed lines in
Thereafter, as shown in the phantom lines in
In this way, the light emitting diode device 1 is obtained.
According to the embodiment in which the second release substrate 33 is used, the same function effect as that of the embodiment in which the light emitting diode element 3 is flip mounted on the diode board 2 in advance can be obtained.
Furthermore, in the embodiment in which the second release substrate 33 is used, it is not required that the light emitting diode element 3 is flip mounted on the diode board 2 in advance, so that the side surfaces of the light emitting diode element 3 can be easily in close contact with the reflecting resin layer 4.
On the other hand, in the embodiment in which the light emitting diode element 3 is flip mounted on the diode board 2 in advance, after the side surfaces of the light emitting diode element 3, which is flip mounted on the diode board 2 in advance, are allowed to be in close contact with the reflecting resin layer 4, the light emitting diode element 3 is not required to be separately flip mounted on the diode board 2, so that the light emitting diode device 1 can be easily produced.
In the process of pressing the reflecting resin sheet 13 shown by the arrow in
In the hot pressing, as shown in
In the embodiment in which the first release substrate 14 is pressed with the hot plate 28, it is not required that the buffer sheet 26 is provided in advance, so that the production processes can be simplified.
On the other hand, in the embodiment in which the reflecting resin sheet 13 with respect to the diode board 2 is pressed via the buffer sheet 26, a damage of the light emitting diode element 3 caused by a non-uniform pressing force can be effectively prevented.
In each figure to be described below, the same reference numerals are provided for members corresponding to each of those described above, and their detailed description is omitted.
In the embodiments in
As shown in
The thickness of the upper portion 29 with respect to that of the light emitting diode element 3 is in the range of, for example, 100 to 200%, or preferably 150 to 200% and to be specific, in the range of, for example, 20 to 1000 μm, or preferably 50 to 600 μm.
The phosphor layer 5 is formed, on the light emitting diode element 3, so as to be filled in between the upper portions 29 that are adjacent to the light emitting diode elements 3.
Next, a method for producing the light emitting diode device 1 shown in
In this method, as shown in
To form the reflecting resin sheet 13, the first release substrate 14 is first prepared.
In the first release substrate 14, the release-substrate-side reflecting region 23 is formed so as to be dented.
To be specific, on the upper surface (one surface in the thickness direction) of the first release substrate 14, the release-substrate-side reflecting region 23 is defined as a concave portion 30 that is dented toward the lower side (the other side in the thickness direction) and the release-substrate-side diode region 21 is defined as a protruding portion 31 (the exposed portion 25) that protrudes from the circumference end portion of the concave portion 30 toward the upper side.
That is, the first release substrate 14 is formed into a convexo-concave shape in which the protruding portion 31 (the region corresponding to the board-side reflecting region 10, ref:
The first release substrate 14 is formed, for example, by a known molding process such as an embossing process.
Next, as shown in
In this way, the reflecting resin sheet 13 is formed.
Separately, as shown in the lower portion in
Next, as shown in
By the above-described pressing, the reflecting resin layer 4 is formed so that the corners of the upper portion 29 are chamfered so as to correspond to the shape of the concave portion 30.
Next, as shown in
In this way, the light emitting diode device 1 is obtained.
In the embodiment shown in
In addition, in the embodiment shown in
As a result, the extraction efficiency of the light can be further improved.
In the embodiments in
Next, a method for obtaining the light emitting diode device 1 by providing the reflecting resin layer 4 directly on the diode board 2 is described with reference to
In this method, as shown in
Next, as shown in
The reflecting resin layer 4 is provided so that the side space 27 is formed between the light emitting diode element 3 and the reflecting resin layer 4 in the plane direction.
To provide the reflecting resin layer 4 on the upper surface of the diode board 2, for example, a method such as an application of the reflecting resin composition via the mask 20 shown in
Next, in this method, as shown in the phantom lines in
The pressing board 32 is formed into the same shape as that of the first release substrate 14 in which the concave portion 30 and the protruding portion 31 are provided, which is shown in
The pressing board 32 is formed of the same material as that of the first release substrate 14 shown in
The lower surface of the pressing board 32 can be subjected to a known release treatment (a surface treatment).
As shown in the phantom lines in
Next, in this method, as shown by the arrow in the phantom lines and the solid lines in
To be specific, the pressing board 32 is lowered toward the diode board 2, so that the protruding portion 31 is in close contact with the upper surface of the light emitting diode element 3 and the concave portion 30 presses the reflecting resin layer 4 toward the lower side.
In this way, the reflecting resin layer 4 comes into close contact with each of the side surfaces of the light emitting diode element 3.
In the reflecting resin layer 4, the upper portion 29 that protrudes from the light emitting diode element 3 toward the upper side is formed into a shape corresponding to the concave portion 30 in the pressing board 32.
Next, as shown in
Next, as shown in
Thereafter, as shown in the dashed lines in
In this way, the light emitting diode device 1 is obtained.
In the embodiments in
On the other hand, in the embodiments in
In the embodiments in
In that case, as referred in the numeral 33 shown in parentheses in
Thereafter, as referred in
Next, as shown in the dashed lines in
Thereafter, as referred in the phantom lines in
In this way, the light emitting diode device 1 is obtained.
In the embodiment in which the base member is used as the second release substrate 33, the same function effect as that of the embodiment in which the base member is used as the diode board 2 can be obtained.
In addition, in the embodiment in which the base member is used as the second release substrate 33, it is not required that the light emitting diode element 3 is flip mounted on the diode board 2 in advance, so that the side surfaces of the light emitting diode element 3 can be easily in close contact with the reflecting resin layer 4.
On the other hand, in the embodiment in which the base member is used as the diode board 2, after the side surfaces of the light emitting diode element 3 are allowed to be in close contact with the reflecting resin layer 4, the light emitting diode element 3 is not required to be separately flip mounted on the diode board 2, so that the light emitting diode device 1 can be easily produced.
While the present invention will be described hereinafter in further detail with reference to Examples, the present invention is not limited to these Examples.
First, a reflecting resin sheet was prepared (ref:
That is, a first release substrate in which the upper surface and the lower surface thereof are formed to be in a flat state made of a fluorine resin having a thickness of 50 μm was prepared (ref:
Next, a mask made of stainless steel having a thickness of 100 μm was disposed on the upper surface of the first release substrate (ref:
The mask was formed into a pattern of integrally including a frame portion, a covering portion, and a bridge portion (ref:
Next, a reflecting resin composition was prepared and the reflecting resin composition was applied onto the first release substrate via the mask by a printing (ref:
100 parts by mass of thermosetting silicone resin and 20 parts by mass of a particle of titanium oxide (TiO2: tetragonal system of rutile) in a sphere shape having an average particle size of 300 nm were uniformly mixed, so that the reflecting resin composition was prepared.
In this way, a reflecting film made of the reflecting resin composition was formed in a pattern reverse to that of the mask.
Subsequently, the mask was removed from the first release substrate (ref: arrows in phantom lines in
In this way, a reflecting resin sheet (a transfer sheet) including the first release substrate and a reflecting resin layer made of the reflecting film was formed.
Next, the first release substrate was turned over upside down and a buffer sheet made of EVA having a thickness of 0.12 mm was provided on the upper surface of the first release substrate (ref:
Separately, a light emitting diode element, including a light semiconductor layer including the buffer layer (GaN); an N-type semiconductor layer (n-GaN); a light emitting layer (InGaN); and a P-type semiconductor layer (p-GaN:Mg) and an electrode portion including an anode electrode and a cathode electrode having a thickness of 0.1 mm and a maximum length (L2) of 0.42 mm, was flip mounted on the upper surface of a diode board having a thickness of 1 mm (ref: the lower portion in
Next, the reflecting resin sheet was laminated on the diode board (ref:
To be specific, the lower surface of the reflecting resin layer was allowed to be in contact with a board-side reflecting region in the diode board and an exposed portion was allowed to be in contact with the upper surface of the light emitting diode element (ref:
Next, the reflecting resin sheet was pressed toward the lower side (ref: the arrow in
In this way, the exposed portion of the first release substrate came into close contact with the upper surface of the light emitting diode element and the reflecting resin layer came into close contact with the side surfaces of the light emitting diode element.
A resin concave portion was formed in the central portion on the upper surface of the reflecting resin layer. The resin concave portion had a thickness (T2) of 90 μm.
Next, the first release substrate was removed from the reflecting resin layer and the light emitting diode element together with the buffer sheet (ref:
In this way, the reflecting resin layer was transferred from the first release substrate to the diode board.
Thereafter, the reflecting resin layer was cured by being heated.
Next, a phosphor layer was provided on the upper surface of the light emitting diode element (ref:
To be specific, 26 parts by mass of phosphor particles composed of Y3Al5O12:Ce (in a sphere shape, the average particle size of 8 μm) and 74 parts by mass of a silicone resin (addition reaction type silicone resin, kinetic viscosity (at 25° C.) of 20 mm2/S, manufactured by WACKER ASAHIKASEI SILICONE CO., LTD.) were blended and stirred uniformly, so that a phosphor composition was prepared.
Next, the prepared phosphor composition was applied onto the upper surface of the light emitting diode element by a printing to form a phosphor film. Thereafter, the phosphor film was dried at 100° C. to form the phosphor layer.
Thereafter, the reflecting resin layer and the diode board were subjected to a dicing process along a thickness direction, so that a light emitting diode device including the diode board, the light emitting diode element, the reflecting resin layer, and the phosphor layer was produced (ref: dashed lines in
A light emitting diode device was produced in the same manner as in Example 1 except that a concave portion and a protruding portion were formed on the upper surface of the first release substrate (ref:
That is, in the reflecting resin sheet, the reflecting resin layer was formed in the concave portion in the first release substrate (ref:
In this way, an upper portion of the reflecting resin layer was formed into a taper shape corresponding to the concave portion.
Next, the first release substrate was peeled off from the reflecting resin layer and the light emitting diode element (ref:
Thereafter, the reflecting resin layer and the diode board were subjected to the dicing process along the thickness direction, so that the light emitting diode device was produced (ref: the dashed lines in
A light emitting diode device was obtained in the same manner as in Example 1 except that the reflecting resin layer was directly provided on the diode board (ref:
That is, the light emitting diode element was first provided on the upper surface of the diode board (ref:
Next, the reflecting resin layer was provided on the upper surface of the diode board using the mask (ref:
Next, in this method, the pressing board in which the concave portion and the protruding portion were provided made of stainless steel was prepared (ref: the phantom lines in
Subsequently, the reflecting resin layer was pressed by the pressing board (ref: the arrow in the phantom lines and solid lines in
In this way, the reflecting resin layer was allowed to be in close contact with each of the side surfaces of the light emitting diode element and was formed, in the upper portion of the reflecting resin layer, into a shape corresponding to the concave portion in the pressing board.
Next, the pressing board was removed (ref:
Thereafter, the reflecting resin layer and the diode board were subjected to the dicing process along the thickness direction, so that the light emitting diode elements were singulated to obtain the light emitting diode device (ref: the dashed lines in
While the illustrative embodiments of the present invention are provided in the above description, such is for illustrative purpose only and it is not to be construed as limiting the scope of the present invention. Modification and variation of the present invention that will be obvious to those skilled in the art is to be covered by the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2011-089922 | Apr 2011 | JP | national |
This is a divisional of U.S. application Ser. No. 13/446,517 filed Apr. 13, 2012, which claims priority from Japanese Application No. 2011-089922 filed on Apr. 14, 2011, the contents of all of which are hereby incorporated by reference into this application.
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| Number | Date | Country | |
|---|---|---|---|
| 20150357536 A1 | Dec 2015 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 13446517 | Apr 2012 | US |
| Child | 14831305 | US |
