Patent Application
20110203610
This invention generally relates to methods and apparatuses suitable for removing residuals or un-wanted deposits within processing chambers, as being used e. g. in vacuum processing or treatment systems. More particularly, the invention relates to a method for cleaning the interior of a process chamber from silicon and/or silicon comprising components.
In industrial manufacturing of semiconductor devices systems for deposition of layers with certain properties are being widely used. These are semiconducting, metallic, dielectric or other layers which are deposited under atmospheric or sub-atmospheric conditions. Amongst others, CVD (chemical vapour deposition), PECVD (plasma enhanced CVD), PVD (physical vapour deposition) as well as APCVD (atmospheric pressure CVD) are well known. Treatment systems of such kind for sub-atmospheric pressure regimes comprise (at least) a vacuum chamber, inlet(s) for substances (like process and/or deposition gases or liquids) and outlet(s) to remove residuals.
As a result of such deposition processes layers of desired properties, thickness and homogeneity are being deposited on workpieces or substrates; however the interior of said vacuum chamber (also: process or deposition chamber) as well as adjacent regions (like in- and outlets) are being affected by (here) unwanted coatings. After deposition of such thin film layers (e. g. silicon layers, nano- or micro-crystalline silicon layers) the deposition chamber must be cleaned, either after each individual run (deposition step or cycle) or after a multitude of deposition runs. It is generally known in the art to use for such cleaning a remote plasma source (RPS). Such RPS generates an active species (here for example fluorine radicals) in a separate chamber, fluidly connected to said process chamber, thus conducting the radicals into the deposition chamber. A uniform gas supply or radical supply into the chamber to be cleaned is required to reach uniform cleaning conditions and thus optimal gas usage and as short as possible cleaning times.
For large-area processing equipment, such as deposition systems for TFT panels, architectural glass and/or photovoltaic cells the problem is more pronounced than for smaller system, like in wafer processing. Generally it has been known to attach an RPS system to the inlet system also used for the deposition and process gases. This way, the cleaning radicals are directed the same way as the gas responsible for the deposition and such the probability is high that all regions where unwanted deposition had taken place are also affected by the cleaning radicals.
The conduction of active species into the deposition chamber is in large area deposition equipment linked to significant loss of active species due to volume and surface recombination. The often used gas shower distribution systems comprise piping of considerable length, which means the time between generation of radicals in the RPS until the area to be cleaned is reached, is significant. In semi-conductor equipment where much smaller samples (wafer with 30 cm diameter maximum) were prepared the relevant distances are much shorter, therefore this problem has seldom be addressed in the semiconductor/wafer industry.
The radical supply into the large area chamber must be optimized for a large area reactor in order to assure a homogenous and fast cleaning.
The pressure gradient between RPS device and the chamber to be cleaned needs to be addressed in large area equipment as well. A non negligible pressure gradient occurs due to the length of the tubes (piping) which influences the optimal parameter space of operation of the RPS itself and the chamber to be cleaned. A separate optimization of parameters in the RPS and in the deposition chamber was therefore never addressed since in these small chambers both parameter spaces are closely linked and not separable. U.S. Pat. No. 7,037,376 to Harvey addresses the problem by directing a cleaning gas from a remote plasma source via the fore-vacuum line into the chamber and via the gas distribution showerhead into an exhaust.
One embodiment of the present invention comprises a vacuum chamber, process or deposition chamber or reactor 1 with an inlet 14 and at least two outlets 3, 4. A first of said outlets comprises a connection point for an RPS. A second outlet comprises exhaust means such as a vacuum pump 13. A method for remote plasma cleaning comprises directing a flow of radicals, generated by a remote plasma source attached at a connecting point to the first (reference number 3) of at least two outlets of a vacuum chamber 1 whilst operating exhaust means 13 via the second (reference number 4) of said outlets.
The invention comprises feeding a gas for cleaning (NF3, C2F6, CF4, CHF3, F2, HF, Cl2, HCl, or any other Fluorine or Chlorine comprising precursor) via the first of at least two pumping tubes or outlets 3, 4 into said vacuum chamber.
The geometry of the connecting tubing 5, 6 from the external RPS chamber to deposition chamber 1 or connecting point to the outlet(s) 3, 4 must be optimized in diameter (between 0.5 cm and 50 cm), length (between 0.25 m and 50 m, depending on available space), shape and material to minimize the flow resistance. This can be done for example via a particular distribution of diaphragm with cross sections of at least 0.5 mm diameter, bellows, corners (the angle between the two lines are between 0° and 90°), etc.
Since the pump lines (outlets 3, 4 with exhaust means 12, 13) will be used for normal pumping during deposition a contamination of the RPS system must be avoided. This can be achieved by installing a barrier against deposition gases in connecting tubing (5) between external RPS and deposition chamber 1. This could be for example a valve with tightness between 50% and 100% (feature 7 in
A homogeneous distribution of cleaning radicals can be achieved by installing distribution plates or grids with transparency between 25% and 99%. However it must be noted that these grids must be simultaneously optimized for deposition as well as for cleaning gas distribution.
Preferably a separate optimization of pressure regimes is provided for in a way that the pressure in the RPS is between 0.5 mbar and 25 mbar, whereas the pressure in the reactor is between 0.1 mbar and 10 mbar. This can be achieved for example via modifying the tube geometry, varying the total gas flow, using admixture of rare gases (for example He or Ar), which leads to acceleration of gas flow and changed pressure gradient or multi-step recipes.
A combination of RPS cleaning with standard in situ (power density between 0.02 W/cm2 and 0.5 W/cm2) cleaning—called hybrid-cleaning—optimizes cleaning of the main plasma chamber and cleaning in the vacuum gap of a dielectric compensating layer, if present. This can be achieved e. g. in a plasma deposition chamber of the well known parallel plate reactor type.
In a reactor with more than one pump lines from more than one side of the deposition chamber more than one RPS inlets can be used.
If more than one RPS inlets into the deposition chamber will be installed (as shown in
The switching scheme includes valves 9, 10 for alternating blocking one of the pumping lines in order to increase the cleaning efficiency through the other line. With reference to
It is known to design vacuum deposition systems such that the outlets connected to pumps do not exhibit too much flow resistance, because increased resistance immediately results in prolonged pumping times and reduced pumping efficiency. Therefore those pumping lines will typically be optimized anyway. The invention now uses those optimized outlets and pumping lines in reverse mode to flow in cleaning gases in short times in the reaction chamber, therby increasing the cleaning efficiency considerably.
Thus the use of an RPS according to the invention can help decoupling the deposition and cleaning process. Without any RPS for the so called in-situ cleaning all RF-components must be optimized for two applications, optimal deposition and optimal cleaning. This optimization of RF- and chamber components is complicated, expansive and sometimes requires suboptimal compromises. By installing a RPS the RF-matchbox, the RF-feeding ribbon, the backfilling gas which is linked to lifetime and corrosion prevention can be improved significantly and specifically designed for the deposition cycle.
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/CH09/00239 | 7/7/2009 | WO | 00 | 4/21/2011 |
| Number | Date | Country | |
|---|---|---|---|
| 61079286 | Jul 2008 | US |
