RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

Information

  • Patent Application
  • 20140322652
  • Publication Number
    20140322652
  • Date Filed
    April 22, 2014
    10 years ago
  • Date Published
    October 30, 2014
    10 years ago
Abstract
A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid and an acid generator which generates acid upon exposure, the base component containing a polymeric compound containing a structural unit represented by general formula (a0-1) and the acid generator containing a compound represented by general formula (b1). In the formulae, R represents H, an alkyl group of C1 to 5 or a halogenated alkyl group of C1 to 5; Ya1 represents a single bond or a divalent linking group; La1 and La2 represents —SO2— or —C(═O)—; Ra1 represents a cyclic group which may have a substituent and the like; n1 and n2 represents 0 or 1; R11 represents a cyclic group of C5 to 30 which may have a substituent; V11 represents a single bond or an alkylene group of C1 to 6; L11 represents an ester bond; Y11 represents an alkylene group of C1 to 5 which may have a fluorine atom; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.
Description

Priority is claimed on Japanese Patent Application No. 2013-094729, filed on Apr. 26, 2013 and Japanese Patent Application No. 2014-067153, filed on Mar. 27, 2014, the content of which is incorporated herein by reference.


TECHNICAL FIELD

The present invention relates to a resist composition and a method of forming a resist pattern.


BACKGROUND ART

In lithography techniques, for example, a resist film composed of a resist material is formed on a substrate, and the resist film is subjected to selective exposure of radial rays such as light or electron beam through a mask having a predetermined pattern, followed by development, thereby forming a resist pattern having a predetermined shape on the resist film.


A resist material in which the exposed portions become soluble in a developing solution is called a positive-type, and a resist material in which the exposed portions become insoluble in a developing solution is called a negative-type.


In recent years, in the production of semiconductor elements and liquid crystal display elements, advances in lithography techniques have led to rapid progress in the field of pattern miniaturization.


Typically, these miniaturization techniques involve shortening the wavelength (increasing the energy) of the exposure light source. Conventionally, ultraviolet radiation typified by g-line and i-line radiation has been used, but nowadays KrF excimer lasers and ArF excimer lasers are starting to be introduced in mass production of the semiconductor elements. Furthermore, research is also being conducted into lithography techniques that use an exposure light source having a wavelength shorter (energy higher) than these excimer lasers, such as electron beam, extreme ultraviolet radiation (EUV), and X ray.


Resist materials for use with these types of exposure light sources require lithography properties such as a high resolution capable of reproducing patterns of minute dimensions, and a high level of sensitivity to these types of exposure light sources.


As a resist material that satisfies these conditions, a chemically amplified resist composition is used, which includes a base material component that exhibits a changed solubility in a developing solution under the action of acid and an acid generator component that generates acid upon exposure. For example, in the case where the developing solution is an alkali developing solution (alkali developing process), a chemically amplified positive resist which contains, as a base component (base resin), a resin which exhibits increased solubility in an alkali developing solution under action of acid, and an acid generator is typically used. If the resist film formed using the resist composition is selectively exposed during formation of a resist pattern, then within the exposed portions, acid is generated from the acid generator component, and the action of this acid causes an increase in the polarity of the base resin, making the exposed portions soluble in the alkali developing solution. Thus, by conducting alkali developing, the unexposed portions remain to form a positive resist pattern. On the other hand, in the case where such a resist composition is applied to a solvent developing process using a developing solution containing an organic solvent (organic developing solution), the polarity of the base resin at exposed portions is increased, whereas the solubility at exposed portions in an organic developing solution is relatively decreased. As a result, the unexposed portions of the resist film are dissolved and removed by the organic developing solution, and a negative resist pattern in which the exposed portions are remaining is formed. Such a solvent developing process for forming a negative-tone resist composition is sometimes referred to as “negative-tone developing process” (for example, see Patent Document 1).


Currently, resins that contain structural units derived from (meth)acrylate esters within the main chain (acrylic resins) are now widely used as base resins for resist compositions that use ArF excimer laser lithography, as they exhibit excellent transparency in the vicinity of 193 nm (for example, see Patent Document 2).


Patent Documents 3 and 4 discloses a resist composition containing a polymeric compound which contains a structural unit having a divalent imide group or a divalent amide group on the side chain thereof. Patent Document 5 discloses a resist composition containing a polymeric compound which contains a structural unit having a divalent sulfonylamide group on the side chain thereof.


DOCUMENTS OF RELATED ART
Patent Document



  • [Patent Document 1] Japanese Unexamined Patent Application, First Publication No. 2009-025723

  • [Patent Document 2] Japanese Unexamined Patent Application, First Publication No. 2003-241385

  • [Patent Document 3] Japanese Unexamined Patent Application, First Publication No. 2006-63318

  • [Patent Document 4] WO2012/043102

  • [Patent Document 5] Japanese Unexamined Patent Application, First Publication No. 2012-203261



SUMMARY OF THE INVENTION

As further progress is made in lithography techniques and miniaturization of resist patterns, further improvement in resist materials has been demanded in terms of various lithography properties.


However, in the resist compositions disclosed in Patent Documents 3 to 5, further improvement in roughness of the resist pattern is required.


The present invention takes the above circumstances into consideration, with an object of providing a resist composition which exhibits excellent lithography properties, and a method of forming a resist pattern using the resist composition.


A first aspect of the present invention is a resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, and the acid generator component (B) containing a compound (B1) represented by general formula (b1) shown below.




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In the formula (a0-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Ya1 represents a single bond or a divalent linking group; La1 and La2 each independently represents —SO2— or —C(═O)—; Ra1 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent; n1 and n2 each independently represents 0 or 1, and at least one of n1 and n2 is 1, provided that, when La1 is —SO2— and n1 is 1, n2 is 1, and when La2 is —SO2— and n2 is 1, Ya1 is a chain-like divalent linking group;


In the formula (b1), R11 represents a cyclic group of 5 to 30 carbon atoms which may have a substituent; V11 represents a single bond or an alkylene group of 1 to 6 carbon atoms; L11 represents an ester bond; Y11 represents an alkylene group of 1 to 5 carbon atoms which may have a fluorine atom; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.


In the first aspect of the present invention, the polymeric compound (A1) preferably has a structural unit (a1) containing an acid decomposable group that exhibits increased polarity by the action of acid.


In the first aspect of the present invention, the polymeric compound (A1) preferably has a structural unit (a2) containing a lactone-containing cyclic group.


A second aspect of the present invention is a method of forming a resist pattern, including: using a resist composition of the first aspect to form a resist film on a substrate; conducting exposure of the resist film; and developing the resist film to form a resist pattern.


The present invention takes the above circumstances into consideration, and according to the present invention, there are provided a resist composition which exhibits excellent lithography properties and a method of forming a resist pattern using the resist composition.


MODE FOR CARRYING OUT THE INVENTION

In the present description and claims, the term “aliphatic” is a relative concept used in relation to the term “aromatic”, and defines a group or compound that has no aromaticity.


The term “alkyl group” includes linear, branched or cyclic, monovalent saturated hydrocarbon, unless otherwise specified.


The term “alkylene group” includes linear, branched or cyclic, divalent saturated hydrocarbon, unless otherwise specified. The same applies for the alkyl group within an alkoxy group.


A “halogenated alkyl group” is a group in which part or all of the hydrogen atoms of an alkyl group is substituted with a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.


A “fluorinated alkyl group” or a “fluorinated alkylene group” is a group in which part or all of the hydrogen atoms of an alkyl group or an alkylene group have been substituted with fluorine atom(s).


The term “structural unit” refers to a monomer unit that contributes to the formation of a polymeric compound (resin, polymer, copolymer).


A “structural unit derived from an acrylate ester” refers to a structural unit that is formed by the cleavage of the ethylenic double bond of an acrylate ester.


An “acrylate ester” refers to a compound in which the terminal hydrogen atom of the carboxy group of acrylic acid (CH2═CH—COOH) has been substituted with an organic group.


The acrylate ester may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent. The substituent (Rα) that substitutes the hydrogen atom bonded to the carbon atom on the α-position is an atom other than hydrogen or a group, and examples thereof include an alkyl group of 1 to 5 carbon atoms, a halogenated alkyl group of 1 to 5 carbon atoms and a hydroxyalkyl group. A carbon atom on the α-position of an acrylate ester refers to the carbon atom bonded to the carbonyl group, unless specified otherwise.


Hereafter, an acrylate ester having the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent is sometimes referred to as “α-substituted acrylate ester”. Further, acrylate esters and α-substituted acrylate esters are collectively referred to as “(α-substituted) acrylate ester”.


A “structural unit derived from hydroxystyrene or a hydroxystyrene derivative” refers to a structural unit that is formed by the cleavage of the ethylenic double bond of hydroxystyrene or a hydroxystyrene derivative.


The term “hydroxystyrene derivative” includes compounds in which the hydrogen atom at the α-position of hydroxystyrene has been substituted with another substituent such as an alkyl group or a halogenated alkyl group; and derivatives thereof. Examples of the derivatives thereof include hydroxystyrene in which the hydrogen atom of the hydroxy group has been substituted with an organic group and may have the hydrogen atom on the α-position substituted with a substituent; and hydroxystyrene which has a substituent other than a hydroxy group bonded to the benzene ring and may have the hydrogen atom on the α-position substituted with a substituent. Here, the α-position (carbon atom on the α-position) refers to the carbon atom having the benzene ring bonded thereto, unless specified otherwise.


As the substituent which substitutes the hydrogen atom on the α-position of hydroxystyrene, the same substituents as those described above for the substituent on the α-position of the aforementioned α-substituted acrylate ester can be mentioned.


A “structural unit derived from vinylbenzoic acid or a vinylbenzoic acid derivative” refers to a structural unit that is formed by the cleavage of the ethylenic double bond of vinylbenzoic acid or a vinylbenzoic acid derivative.


The term “vinylbenzoic acid derivative” includes compounds in which the hydrogen atom at the α-position of vinylbenzoic acid has been substituted with another substituent such as an alkyl group or a halogenated alkyl group; and derivatives thereof. Examples of the derivatives thereof include benzoic acid in which the hydrogen atom of the carboxy group has been substituted with an organic group and may have the hydrogen atom on the α-position substituted with a substituent; and benzoic acid which has a substituent other than a hydroxy group and a carboxy group bonded to the benzene ring and may have the hydrogen atom on the α-position substituted with a substituent. Here, the α-position (carbon atom on the α-position) refers to the carbon atom having the benzene ring bonded thereto, unless specified otherwise.


The term “styrene” includes styrene itself and compounds in which the hydrogen atom at the α-position of styrene has been substituted with another substituent such as an alkyl group or a halogenated alkyl group.


A “structural unit derived from styrene or a styrene derivative” refers to a structural unit that is formed by the cleavage of the ethylenic double bond of styrene or a styrene derivative.


As the alkyl group as a substituent on the α-position, a linear or branched alkyl group is preferable, and specific examples include alkyl groups of 1 to 5 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group and a neopentyl group.


Specific examples of the halogenated alkyl group as the substituent on the α-position include groups in which part or all of the hydrogen atoms of the aforementioned “alkyl group as the substituent on the α-position” are substituted with halogen atoms. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly desirable.


Specific examples of the hydroxyalkyl group as the substituent on the α-position include groups in which part or all of the hydrogen atoms of the aforementioned “alkyl group as the substituent on the α-position” are substituted with a hydroxy group. The number of hydroxy groups within the hydroxyalkyl group is preferably 1 to 5, and most preferably 1.


The expression “may have a substituent” means that a case where a hydrogen atom (—H) is substituted with a monovalent group, or a case where a methylene (—CH2—) group is substituted with a divalent group.


The term “exposure” is used as a general concept that includes irradiation with any form of radiation.


An “organic group” refers to a group containing a carbon atom, and may include atoms other than carbon atoms (e.g., a hydrogen atom, an oxygen atom, a nitrogen atom, a sulfur atom, a halogen atom (such as a fluorine atom and a chlorine atom) and the like).


<<Resist Composition>>


The present invention of the present invention is a resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0-1), and the acid generator component (B) containing a compound (B1) represented by general formula (b1).


The resist composition of the present invention includes a base component (A) (hereafter, referred to as “component (A)”) which exhibits changed solubility in a developing solution under action of acid, and an acid generator component (B) (hereafter, referred to as “component (B)”) which generates acid upon exposure. When a resist film is formed using the resist composition and the formed resist film is subjected to a selective exposure, acid is generated from the component (B) at exposed portions, and the generated acid acts on the component (A) to change the solubility of the component (A) in a developing solution, whereas the solubility of the component (A) in a developing solution is not changed at unexposed portions, thereby generating difference in solubility in a developing solution between exposed portions and unexposed portions. Therefore, by subjecting the resist film to development, the exposed portions are dissolved and removed to form a positive-tone resist pattern in the case of a positive resist, whereas the unexposed portions are dissolved and removed to form a negative-tone resist pattern in the case of a negative resist.


In the present specification, a resist composition which forms a positive resist pattern by dissolving and removing the exposed portions is called a positive resist composition, and a resist composition which forms a negative resist pattern by dissolving and removing the unexposed portions is called a negative resist composition.


The resist composition of the present invention may be either a positive resist composition or a negative resist composition.


Further, in the formation of a resist pattern, the resist composition of the present invention can be applied to an alkali developing process using an alkali developing solution in the developing treatment, or a solvent developing process using a developing solution containing an organic solvent (organic developing solution) in the developing treatment.


<Component (A)>


In the present invention, the term “base component” refers to an organic compound capable of forming a film, and is preferably an organic compound having a molecular weight of 500 or more. When the organic compound has a molecular weight of 500 or more, the film-forming ability is improved, and a resist pattern of nano level can be easily formed.


The organic compound used as the base component is broadly classified into non-polymers and polymers.


In general, as a non-polymer, any of those which have a molecular weight in the range of 500 to less than 4,000 is used. Hereafter, a “low molecular weight compound” refers to a non-polymer having a molecular weight in the range of 500 to less than 4,000.


As a polymer, any of those which have a molecular weight of 1,000 or more is generally used. Hereafter, a “resin” refers to a polymer having a molecular weight of 1,000 or more.


As the molecular weight of the polymer, the weight average molecular weight in terms of the polystyrene equivalent value determined by gel permeation chromatography (GPC) is used.


As the component (A), a resin, a low molecular weight compound, or a combination thereof may be used.


The component (A) may be a component that exhibits increased solubility in a developing solution under action of acid or a component that exhibits decreased solubility in a developing solution under action of acid.


In the present invention, the component (A) may be a component that generates acid upon exposure.


(Structural Unit (a0))


The resist composition of the present invention includes a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below.




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In the formula (a0-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Ya1 represents a single bond or a divalent linking group; La1 and La2 each independently represents —SO2— or —C(═O)—; Ra1 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent; n1 and n2 each independently represents 0 or 1, and at least one of n1 and n2 is 1, provided that, when La1 is —SO2— and n1 is 1, n2 is 1, and when Lae is —SO2— and n2 is 1, Ya1 is a chain-like divalent linking group.


In general formula (a0-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms. The alkyl group of 1 to 5 carbon atoms is preferably a linear or branched alkyl group of 1 to 5 carbon atoms, and specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, and a neopentyl group. The halogenated alkyl group of 1 to 5 carbon atoms is a group in which part or all of the hydrogen atoms of the aforementioned alkyl group of 1 to 5 carbon atoms have been substituted with halogen atoms. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly desirable.


As R, a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom or a methyl group is particularly desirable in terms of industrial availability.


In formula (a0-1), Ya1 represents a single bond or a divalent linking group.


The divalent linking group for Ya1 is not particularly limited, and preferable examples thereof include a divalent hydrocarbon group which may have a substituent and a divalent linking group containing a hetero atom.


(Divalent Hydrocarbon Group which May have a Substituent)


The hydrocarbon group as a divalent linking group may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group.


An “aliphatic hydrocarbon group” refers to a hydrocarbon group that has no aromaticity. The aliphatic hydrocarbon group may be saturated or unsaturated. In general, the aliphatic hydrocarbon group is preferably saturated.


Examples of the aliphatic hydrocarbon group include a linear or branched aliphatic hydrocarbon group, and an aliphatic hydrocarbon group containing a ring in the structure thereof can be given. Specific examples thereof include the same group as exemplified above for Va1 in formula (a1-1) described later.


The linear or branched aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include a fluorine atom, a fluorinated alkyl group of 1 to 5 carbon atoms, and a carbonyl group.


As examples of the aliphatic hydrocarbon group containing a ring in the structure thereof, a cyclic aliphatic hydrocarbon group which may have a substituent containing a hetero atom in the ring structure thereof (a group in which two hydrogen atoms have been removed from an aliphatic hydrocarbon ring), a group in which the cyclic aliphatic hydrocarbon group is bonded to the terminal of a linear or branched aliphatic hydrocarbon group, and a group in which the cyclic aliphatic hydrocarbon group is interposed within a linear or branched aliphatic hydrocarbon group, can be given. As the linear or branched aliphatic hydrocarbon group, the same groups as those described above can be used.


The cyclic aliphatic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.


Specific examples of the cyclic aliphatic hydrocarbon group include the same group as exemplified above for Va1 in formula (a1-1) described later.


The cyclic aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group and a carbonyl group.


The alkyl group as the substituent is preferably an alkyl group of 1 to 5 carbon atoms, and a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group is most desirable.


The alkoxy group as the substituent is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group, and most preferably a methoxy group or an ethoxy group.


Examples of the halogen atom for the substituent include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferable.


Examples of the halogenated alkyl group for the substituent include groups in which part or all of the hydrogen atoms within the aforementioned alkyl groups has been substituted with the aforementioned halogen atoms.


In the cyclic aliphatic hydrocarbon group, part of the carbon atoms constituting the ring structure thereof may be substituted with a substituent containing a hetero atom. The substituent containing a hetero atom is preferably —O—, —C(═O)—O—, —S—, —S(═O)2—, or —S(═O)2—O—


Specific examples of the aromatic hydrocarbon group as a divalent hydrocarbon group include the same group as exemplified above for Va1 in formula (a1-1) described later.


With respect to the aromatic hydrocarbon group, the hydrogen atom within the aromatic hydrocarbon group may be substituted with a substituent. For example, the hydrogen atom bonded to the aromatic ring within the aromatic hydrocarbon group may be substituted with a substituent. Examples of substituents include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, and a hydroxyl group.


The alkyl group as the substituent is preferably an alkyl group of 1 to 5 carbon atoms, and a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group is most desirable.


As the alkoxy group, the halogen atom and the halogenated alkyl group for the substituent, the same groups as the aforementioned substituent groups for substituting a hydrogen atom within the cyclic aliphatic hydrocarbon group can be used.


(Divalent Linking Group Containing a Hetero Atom)


With respect to a divalent linking group containing a hetero atom, a hetero atom is an atom other than carbon and hydrogen, and examples thereof include an oxygen atom, a nitrogen atom, a sulfur atom and a halogen atom.


In the case where Ya1 represents a divalent linking group containing a hetero atom, preferable examples of the linking group include —O—, —C(═O)—O—, —C(═O)—, —O—C(═O)—O—, —C(═O)—NH—, —C(═O)—NH—Y21—, —NH—, and —NH—C(═NH)— (wherein H may be substituted with a substituent such as an alkyl group or an acyl group), —S—, —S(═O)2—, —S(═O)2—O—, and a group represented by general formula —Y21—O—Y22−, —Y21—O—, —Y21—C(═O)—O—, —C(═O)—O—Y21—,—[Y21—C(═O)—O]m′—Y22— or —Y21—O—C(═O)—Y22— [in the formulae, each of Y21 and Y22 independently represents a divalent hydrocarbon group which may have a substituent, O represents an oxygen atom, and m′ represents an integer of 0 to 3].


When the divalent linking group containing a hetero atom represents —C(═O)—NH—, —NH—, —NH—C(═NH)—, or —C(═O)—NH—Y21—, H may be substituted with a substituent such as an alkyl group, an acyl group or the like. The substituent (an alkyl group, an acyl group or the like) preferably has 1 to 10 carbon atoms, more preferably 1 to 8, and most preferably 1 to 5.


In formula Y21—O—Y22—, —Y21—O—, —Y21—C(═O)—O—, —C(═O)—O—Y21—, —[Y21—C(═O)—O]m′—Y22— or —Y21—O—C(═O)—Y22—, Y21 and Y22 each independently represents a divalent hydrocarbon group which may have a substituent. Examples of the divalent hydrocarbon group include the same groups as those described above as the “divalent hydrocarbon group which may have a substituent” in the explanation of the aforementioned divalent linking group.


As Y21, a linear aliphatic hydrocarbon group is preferable, more preferably a linear alkylene group, still more preferably a linear alkylene group of 1 to 5 carbon atoms, and a methylene group or an ethylene group is particularly desirable.


As Y22, a linear or branched aliphatic hydrocarbon group is preferable, and a methylene group, an ethylene group or an alkylmethylene group is more preferable. The alkyl group within the alkylmethylene group is preferably a linear alkyl group of 1 to 5 carbon atoms, more preferably a linear alkyl group of 1 to 3 carbon atoms, and most preferably a methyl group.


In the group represented by the formula—[Y21—C(═O)—O]m′—Y22—, m′ represents an integer of 0 to 3, preferably an integer of 0 to 2, more preferably 0 or 1, and particularly preferably 1. Namely, it is particularly desirable that the group represented by the formula —[Y21—C(═O)—O]m′—Y22— is a group represented by the formula —Y21—C(═O)—O—Y22—. Among these, a group represented by the formula —(CH2)a′—C(═O)—O—(CH2)b′— is preferable. In the formula, a′ is an integer of 1 to 10, preferably an integer of 1 to 8, more preferably an integer of 1 to 5, still more preferably 1 or 2, and most preferably 1. b′ is an integer of 1 to 10, preferably an integer of 1 to 8, more preferably an integer of 1 to 5, still more preferably 1 or 2, and most preferably 1.


In the present invention, Ya1 preferably represents an ester bond [—C(═O)—O-], an ether bond (—O—), a linear or branched alkylene group, a combination of these, or a single bond. When La2 is —SO2— and n2 is 1, Ya1 is a chain-like divalent linking group, and Ya1 is preferably an ester bond [—C(═O)—O-], an ether bond (—O—), a linear or branched alkylene group or a combination of these.


In the formula (a0-1), La1 and La2 each independently represents —SO2— or —C(═O)—, provided that, when La1 is —SO2— and n1 is 1, n2 is 1.


in the formula (a0-1), Ra1 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, and n1 and n2 each independently 0 or 1, provided that at least one of n1 and n2 is 1.


As the cyclic group which may have a substituent, the chain-like alkyl group which may have a substituent and the chain-like alkenyl group which may have a substituent for Ra1, the same cyclic group which may have a substituent, chain-like alkyl group which may have a substituent and chain-like alkenyl group which may have a substituent as those for R101 and R104 to R108 in general formulae (b-1) to (b-3) described later can be mentioned.


In the present invention, among these, as the cyclic group which may have a substituent for Ra1, a monovalent alicyclic hydrocarbon group, an aryl group and an aralkyl group can be mentioned.


The monovalent alicyclic hydrocarbon group for Ra1 preferably has 3 to 20 carbon atoms and more preferably 3 to 12 carbon atoms, and may be either monocyclic or polycyclic. As the monocyclic alicyclic hydrocarbon group, a group in which one or more hydrogen atoms have been removed from a monocycloalkane is preferable. The monocycloalkane preferably has 3 to 8 carbon atoms, and more preferably 3 to 6. Specific examples of the monocycloalkanes include cyclopropane, cyclobutane, cyclopentane and cyclohexane. As the polycyclic alicyclic hydrocarbon group, a group in which one or more hydrogen atoms have been removed from a polycycloalkane is preferable, and the polycycloalkane preferably has 7 to 20 carbon atoms, and more preferably has 7 to 12 carbon atoms. Examples of the polycycloalkane include adamantane, norbornane, isobornane, tricyclodecane and tetracyclododecane.


The aryl group for Ra1 preferably has 6 to 18 carbon atoms and more preferably 6 to 10 carbon atoms, and a phenyl group is particularly preferable.


Examples of the aralkyl group for Ra1 include a group in which an alkylene group of 1 to 8 carbon atoms and the aforementioned “aryl group for Ra1” are mutually bonded. An aralkyl group in which an alkylene group of 1 to 6 carbon atoms and the aforementioned “aryl group for Ra1” are mutually bonded is preferable, and an aralkyl group in which an alkylene group of 1 to 4 carbon atoms and the aforementioned “aryl group for Ra1” are mutually bonded is particularly preferable.


The hydrocarbon group for Ra1 is preferably a group in which part or all of the hydrogen atoms within a hydrocarbon group has been substituted with a fluorine atom, and more preferably a group in which 30 to 100% of the hydrogen atoms within a hydrocarbon group have been substituted with fluorine atoms. Among these, a perfluoroalkyl group in which all of the hydrogen atoms within the alkyl group has been substituted with fluorine atoms is particularly preferable.


The hydrocarbon group for Ra1 may have a substituent. Examples of the substituents include an alkyl group of 1 to 5 carbon atoms, a halogen atom, an oxo group (═O), a hydroxy group (—OH), an amino group (—NH2) and —SO2—NH2. In the hydrocarbon group, part of the carbon atoms constituting the hydrocarbon group may be substituted with a substituent containing a hetero atom. The substituent containing a hetero atom is preferably —O—, —NH—, —N═, —C(═O)—O—, —S—, —S(═O)2—, or —S(═O)2—O.—


Examples of the hydrocarbon group for Ra1 having a substituent include lactone-containing cyclic groups represented by general formulae (a2-r-1) to (a2-r-7) described later, —SO2— containing cyclic groups represented by formulae (a5-r-1) to (a5-r-4) described later, a substituted aryl group represented by chemical formulae shown below, a polycyclic monovalent alicyclic hydrocarbon group which may have a substituent, and a monovalent heterocycles represented by chemical formulae shown below. The “*” in the formula represents a valence bond.




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In the present invention, the chain-like alkyl group for Ra1 which may have a substituent preferably has 1 to 8 carbon atoms, more preferably 1 to 6, and still more preferably 1 to 4, and may be either linear or branched. Specific examples include a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group and an octyl group.


Examples of the fluorinated alkyl group for Ra1 include groups in which part or all of the hydrogen atoms within the alkyl group has been substituted with a fluorine atom. Specific examples include trifluoromethyl group, —CH2—CF3, —CH2—CF2—CF3, —CH(CF3)2, —CH2—CH2—CF3 and —CH2—CH2—CF2—CF2—CF2—CF3.


In the present invention, the structural unit (a0) is a structural unit represented by any one of general formulae (a0-1-1) to (a0-1-3) shown below.




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In the formulae, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Ya1 represents a single bond or a divalent linking group; La1 and La2 each independently represents —SO2— or —C(═O)—, provided that, when La2 is —SO2—, Ya1 represents a chain-like divalent linking group; and n1 represents 0 or 1; Ra1 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent.


In the formulae (a0-1-1) to (a0-1-3), R, Ya1, La2 and Ra1 are the same as defined above.


In the formula (a0-1-2), as the linking group for Ya1, when La2 is —C(═O)—, —C(═O)O-Va01- and —C(═O)NH-Va01- are preferable


Va01 is an alkylene group or a cyclic aliphatic hydrocarbon group. Among these, a (poly)cycloalkylene group is preferable.


When La2 is —SO2—, it is preferable that Ya1 is preferably a single bond, or —C(═O)O-Va01- (wherein Va01 is an alkylene group). When Ya1 is —C(═O)O-Va01-, it is preferable to form —C(═O)O-Va01-La1. When La2 is —SO2—, it is preferable that Ya1 is a single bond, and La1 is —C(═O)— (wherein n1 is 1).


Specific examples of the structural unit (a0) are shown below. In the formulae, R is the same as defined above. In the formulae shown below, Rα represents a hydrogen atom, a methyl group or a trifluoromethyl group.




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As the structural unit (a0) contained in the component (A1), 1 type of structural unit may be used, or 2 or more types may be used.


The amount of the structural unit (a0) within the component (A1) based on the combined total of all structural units constituting the component (A1) is preferably 1 to 50 mol %, more preferably 5 to 45 mol %, and still more preferably 10 to 40 mol %.


When the amount of the structural unit (a0) is at least as large as the lower limit of the above-mentioned range, various lithography properties (such as sensitivity and LWR) can be improved. On the other hand, when the amount of the structural unit (a0) is no more than the upper limit of the above-mentioned range, a good balance can be achieved with the other structural units, and a resist pattern having excellent shape can be obtained.


The resist composition of the present invention preferably includes a structural unit (a1), as well as the structural unit (a0).


(Structural Unit (a1))


The structural unit (a1) is a structural unit containing an acid decomposable group that exhibits increased polarity by the action of acid.


The term “acid decomposable group” refers to a group in which at least a part of the bond within the structure thereof is cleaved by the action of an acid.


Examples of acid decomposable groups which exhibit increased polarity by the action of an acid include groups which are decomposed by the action of acid to form a polar group.


Examples of the polar group include a carboxy group, a hydroxy group, an amino group and a sulfo group (—SO3H). Among these, a polar group containing —OH in the structure thereof (hereafter, referred to as “OH-containing polar group”) is preferable, a carboxy group or a hydroxy group is more preferable, and a carboxy group is particularly desirable.


More specifically, as an example of an acid decomposable group, a group in which the aforementioned polar group has been protected with an acid dissociable group (such as a group in which the hydrogen atom of the OH-containing polar group has been protected with an acid dissociable group) can be given.


Here, the “acid dissociable group” is (i) a group in which the bond between the acid dissociable group and the adjacent atom is cleaved by the action of acid; and (ii) a group in which one of the bonds is cleaved by the action of acid, and then a decarboxylation reaction occurs, thereby cleaving the bond between the acid dissociable group and the adjacent atom.


It is necessary that the acid dissociable group that constitutes the acid decomposable group is a group which exhibits a lower polarity than the polar group generated by the dissociation of the acid dissociable group. Thus, when the acid dissociable group is dissociated by the action of acid, a polar group exhibiting a higher polarity than that of the acid dissociable group is generated, thereby increasing the polarity. As a result, the polarity of the entire component (A1) is increased. By the increase in the polarity, the solubility in a developing solution changes and, the solubility in an organic developing solution is relatively decreased.


The acid dissociable group is not particularly limited, and any of the groups that have been conventionally proposed as acid dissociable groups for the base resins of chemically amplified resists can be used.


Examples of the acid dissociable group for protecting the carboxy group or hydroxy group as a polar group include the acid dissociable group represented by general formula (a1-r-1) shown below (hereafter, sometimes referred to as “acetal-type acid dissociable group”).




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In the formula, Ra′1 and Ra′2 represents a hydrogen atom or an alkyl group; and Ra′3 represents a hydrocarbon group, provided that Ra′3 may be bonded to Ra′1 or Ra′2 to form a ring.


In the formula (a1-r-1), as the alkyl group for Ra′1 and Ra′2, the same alkyl groups as those described above for the alkyl groups as the substituent which may be bonded to the carbon atom on the α-position of the aforementioned α-substituted alkylester can be used, although a methyl group or ethyl group is preferable, and a methyl group is particularly desirable.


As the hydrocarbon group for Ra′3, an alkyl group of 1 to 20 carbon atoms is preferable, an alkyl group of 1 to 10 carbon atoms is more preferable, and a linear or branched alkyl group is still more preferable. Specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group, 1,1-dimethylethyl group, 1,1-diethylpropyl group, 2,2-dimethypropyl group and 2,2-dimethybutyl group.


When Ra′3 is a cyclic hydrocarbon group, the hydrocarbon group may be either an aliphatic group or an aromatic group, and may be either a polycyclic group or a monocyclic group. As the monocyclic alicyclic hydrocarbon group, a group in which one hydrogen atom has been removed from a monocycloalkane is preferable. The monocycloalkane preferably has 3 to 8 carbon atoms, and specific examples thereof include cyclopentane, cyclohexane and cyclooctane. As the polycyclic alicyclic hydrocarbon group, a group in which one hydrogen atom has been removed from a polycycloalkane is preferable, and the polycycloalkane preferably has 7 to 12 carbon atoms. Examples of the polycycloalkane include adamantane, norbornane, isobornane, tricyclodecane and tetracyclododecane.


Examples of the aromatic ring contained in the aromatic hydrocarbon group include aromatic hydrocarbon rings, such as benzene, biphenyl, fluorene, naphthalene, anthracene and phenanthrene; and aromatic hetero rings in which part of the carbon atoms constituting the aforementioned aromatic hydrocarbon rings has been substituted with a hetero atom. Examples of the hetero atom within the aromatic hetero rings include an oxygen atom, a sulfur atom and a nitrogen atom.


Specific examples of the aromatic hydrocarbon group include a group in which one hydrogen atom has been removed from the aforementioned aromatic hydrocarbon ring (aryl group); and a group in which one hydrogen atom of the aforementioned aryl group has been substituted with an alkylene group (an arylalkyl group such as a benzyl group, a phenethyl group, a 1-naphthylmethyl group, a 2-naphthylmethyl group, a 1-naphthylethyl group or a 2-naphthylethyl group). The alkylene group (alkyl chain within the arylalkyl group) preferably has 1 to 4 carbon atoms, more preferably 1 or 2, and most preferably 1.


In the case where Ra′3 is bonded to Ra′1 or Ra′2 to form a ring, the cyclic group is preferably a 4 to 7-membered ring, and more preferably a 4 to 6-membered ring. Specific examples of the cyclic group include tetrahydropyranyl group and tetrahydrofuranyl group.


Examples of the acid dissociable group for protecting the carboxy group as a polar group include the acid dissociable group represented by general formula (a1-r-2) shown below (hereafter, with respect to the acid dissociable group represented by the following formula (a1-r-2), the acid dissociable group constituted of alkyl groups is referred to as “tertiary ester-type acid dissociable group”).




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In the formula, Ra′4 to Ra′6 each independently represents a hydrocarbon group, provided that Ra′5 and Ra′6 may be mutually bonded to form a ring.


As the hydrocarbon group for Ra′4 to Ra′6, the same groups as those described above for Ra′3 can be mentioned. Ra′4 is preferably an alkyl group of 1 to 5 carbon atoms. In the case where Ra′5 and Ra′6 are mutually bonded to form a ring, a group represented by general formula (a1-r2-1) shown below can be mentioned.


On the other hand, in the case where Ra′4 to Ra′6 are not mutually bonded and independently represent a hydrocarbon group, the group represented by general formula (a1-r2-2) shown below can be mentioned.




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In the formulae, Ra′10 represents an alkyl group of 1 to 10 carbon atoms; Ra′11 is a group which forms an aliphatic cyclic group together with a carbon atom having Ra′10 bonded thereto; and Ra′12 to Ra′14 each independently represents a hydrocarbon group.


In the formula (a1-r2-1), as the alkyl group of 1 to 10 carbon atoms for Ra′10, the same groups as described above for the linear or branched alkyl group for Ra′3 in the formula (a1-r-1) are preferable. In the formula (a1-r2-1), as the aliphatic cyclic group which is formed by Ra′11, the same groups as those described above for the cyclic hydrocarbon group for Ra′3 in the formula (a1-r-1) are preferable.


In the formula (a1-r2-2), it is preferable that Ra′12 and Ra′14 each independently represents an alkyl group or 1 to 10 carbon atoms, and it is more preferable that the alkyl group is the same group as described above for the linear or branched alkyl group for Ra′3 in the formula (a1-r-1), it is still more preferable that the alkyl group is a linear alkyl group of 1 to 5 carbon atoms, and it is particularly preferable that the alkyl group is a methyl group or an ethyl group.


In the formula (a1-r2-2), it is preferable that Ra′13 is the same group as described above for the linear, branched or cyclic hydrocarbon group for Ra′3 in the formula (a1-r-1).


Among these, the same cyclic hydrocarbon group as those describe above for Ra′3 is more preferable.


Specific examples of the formula (a1-r2-1) are shown below. The “*” in the formula represents a valence bond.




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Specific examples of the formula (a1-r2-2) are shown below.




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Examples of the acid dissociable group for protecting a hydroxy group as a polar group include the acid dissociable group represented by general formula (a1-r-3) shown below (hereafter, referred to as “tertiary alkyloxycarbonyl-type acid dissociable group”).




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In the formula, Ra′7 to Ra′9 each represents an alkyl group.


In the formula (a1-r-3), Ra′7 to Ra′9 is preferably an alkyl group of 1 to 5 carbon atoms, and more preferably an alkyl group of 1 to 3 carbon atoms.


Further, the total number of carbon atoms within the alkyl group is preferably 3 to 7, more preferably 3 to 5, and most preferably 3 or 4.


Examples of the structural unit (a1) include a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid; a structural unit derived from hydroxystyrene or a hydroxystyrene derivative in which at least a part of the hydrogen atom of the hydroxy group is protected with a substituent containing an acid decomposable group; and a structural unit derived from vinylbenzoic acid or a vinylbenzoic acid derivative in which at least a part of the hydrogen atom within —C(═O)—OH is protected with a substituent containing an acid decomposable group.


As the structural unit (a1), a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent is preferable.


As the structural unit (a1), structural units represented by general formulae (a1-1) to (a1-3) shown below are preferable.




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In the formulae, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Va1 represents a divalent hydrocarbon group which may contain an ether bond, an urethane bond or an amide bond; na1 represents an integer of 0 to 2;


Ra1 represents an acid dissociable group represented by the aforementioned formulae (a1-r-1) or (a1-r-2).


Wa1 represents a hydrocarbon group having a valency of na2+1; na2 represents 1 to 3;


Ra2 represents an acid dissociable group represented by the aforementioned formula (a1-r-1) or (a1-r-3).


Wa2 represents a hydrocarbon group having a valency of na3+1; na3 represents 1 to 3;


Va2 represents a divalent hydrocarbon group which may contain an ether bond, an urethane bond or an amide bond; and


Ra3 represents an acid dissociable group represented by the aforementioned formulae (a1-r-1) or (a1-r-2).


In the aforementioned formula (a1-1), the hydrocarbon group for Va1 may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group. An “aliphatic hydrocarbon group” refers to a hydrocarbon group that has no aromaticity. The aliphatic hydrocarbon group as the divalent hydrocarbon group for Va1 may be either saturated or unsaturated. In general, the aliphatic hydrocarbon group is preferably saturated.


As specific examples of the aliphatic hydrocarbon group, a linear or branched aliphatic hydrocarbon group, and an aliphatic hydrocarbon group containing a ring in the structure thereof can be given.


Further, as the group for Va1, a group in which the aforementioned divalent hydrocarbon group has been bonded via an ether bond, urethane bond or amide bond can be mentioned.


The linear or branched aliphatic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6, still more preferably 1 to 4, and most preferably 1 to 3.


As the linear aliphatic hydrocarbon group, a linear alkylene group is preferable, and specific examples include a methylene group [—CH2-], an ethylene group [—(CH2)2-], a trimethylene group [—(CH2)3-], a tetramethylene group [—(CH2)4-] and a pentamethylene group [—(CH2)5—].


As the branched aliphatic hydrocarbon group, a branched alkylene group is preferable, and specific examples include alkylalkylene groups, e.g., alkylmethylene groups such as —CH(CH3)—, —CH(CH2CH3)—, —C(CH3)2—, —C(CH3)(CH2CH3)—, —C(CH3)(CH2CH2CH3)—, and —C(CH2CH3)2—; alkylethylene groups such as —CH(CH3)CH2—, —CH(CH3)CH(CH3)—, —C(CH3)2CH2—, —CH(CH2CH3)CH2—, and —C(CH2CH3)2—CH2—; alkyltrimethylene groups such as —CH(CH3)CH2CH2—, and —CH2CH(CH3)CH2—; and alkyltetramethylene groups such as —CH(CH3)CH2CH2CH2—, and —CH2CH(CH3)CH2CH2—. As the alkyl group within the alkylalkylene group, a linear alkyl group of 1 to 5 carbon atoms is preferable.


As examples of the aliphatic hydrocarbon group containing a ring in the structure thereof, an alicyclic hydrocarbon group (a group in which two hydrogen atoms have been removed from an aliphatic hydrocarbon ring), a group in which the alicyclic hydrocarbon group is bonded to the terminal of a linear or branched aliphatic hydrocarbon group, and a group in which the alicyclic hydrocarbon group is interposed within a linear or branched aliphatic hydrocarbon group, can be given. As the linear or branched aliphatic hydrocarbon group, the same groups as those described above can be used.


The alicyclic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.


The alicyclic hydrocarbon group may be either a monocyclic group or a polycyclic group. As the monocyclic alicyclic hydrocarbon group, a group in which 2 hydrogen atoms have been removed from a monocycloalkane is preferable. The monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples thereof include cyclopentane and cyclohexane. As the polycyclic alicyclic hydrocarbon group, a group in which two hydrogen atoms have been removed from a polycycloalkane is preferable, and the polycycloalkane preferably has 7 to 12 carbon atoms. Examples of the polycycloalkane include adamantane, norbornane, isobornane, tricyclodecane and tetracyclododecane.


The aromatic hydrocarbon group is a hydrocarbon group having an aromatic ring.


The aromatic hydrocarbon group as the divalent hydrocarbon group for Va1 preferably has 3 to 30 carbon atoms, more preferably 5 to 30, still more preferably 5 to 20, still more preferably 6 to 15, and most preferably 6 to 10. Here, the number of carbon atoms within a substituent(s) is not included in the number of carbon atoms of the aromatic cyclic group.


Examples of the aromatic ring contained in the aromatic hydrocarbon group include aromatic hydrocarbon rings, such as benzene, biphenyl, fluorene, naphthalene, anthracene and phenanthrene; and aromatic hetero rings in which part of the carbon atoms constituting the aforementioned aromatic hydrocarbon rings has been substituted with a hetero atom. Examples of the hetero atom within the aromatic hetero rings include an oxygen atom, a sulfur atom and a nitrogen atom.


Specific examples of the aromatic hydrocarbon group include a group in which two hydrogen atoms have been removed from the aforementioned aromatic hydrocarbon ring (arylene group); and a group in which one hydrogen atom has been removed from the aforementioned aromatic hydrocarbon ring (aryl group) and one hydrogen atom has been substituted with an alkylene group (for example, a group in which one hydrogen atom has been removed from an aryl group within an arylalkyl group such as a benzyl group, a phenethyl group, a 1-naphthylmethyl group, a 2-naphthylmethyl group, a 1-naphthylethyl group, or a 2-naphthylethyl group). The alkylene group (alkyl chain within the arylalkyl group) preferably has 1 to 4 carbon atoms, more preferably 1 or 2, and most preferably 1.


In the aforementioned formula (a1-2), the hydrocarbon group for Wa1 having a valency of na2+1 may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group refers to a hydrocarbon group that has no aromaticity, and may be either saturated or unsaturated, but is preferably saturated. Examples of the aliphatic hydrocarbon group include a linear or branched aliphatic hydrocarbon group, an aliphatic hydrocarbon group containing a ring in the structure thereof, and a combination of the linear or branched aliphatic hydrocarbon group and the aliphatic hydrocarbon group containing a ring in the structure thereof. As the specific examples thereof, the same groups as those described above for Va1 in the aforementioned formula (a1-1) can be mentioned.


The valency of na2+1 is preferably divalent, trivalent or tetravalent, and divalent or trivalent is more preferable.


In the aforementioned formula (a1-3), the hydrocarbon group for Wa2 having a valency of na3+1 may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group refers to a hydrocarbon group that has no aromaticity, and may be either saturated or unsaturated, but is preferably saturated. Examples of the aliphatic hydrocarbon group include a linear or branched aliphatic hydrocarbon group, an aliphatic hydrocarbon group containing a ring in the structure thereof, and a combination of the linear or branched aliphatic hydrocarbon group and the aliphatic hydrocarbon group containing a ring in the structure thereof. As the specific examples thereof, the same groups as those described above for Va1 in the aforementioned formula (a1-1) can be mentioned.


The valency of na3+1 is preferably divalent, trivalent or tetravalent, and divalent or trivalent is more preferable.


In the formula (a1-3), Va2 is the same group as defined above for Va1 in the formula (a1-1).


As the structural unit represented by the aforementioned formula (a1-2), a structural unit represented by general formula (a1-2-01) shown below is desirable.




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In the formula (a1-2-01), Ra2 represents an acid dissociable group represented by the aforementioned formulae (a1-r-1) or (a1-r-3); na2 is an integer of 1 to 3, preferably 1 or 2, and more preferably 1; c is an integer of 0 to 3, preferably 0 or 1, and more preferably 1; and R is the same as defined above.


Specific examples of the structural units (a1-1) and (a1-2) are shown below. In the formulae shown below, Rα represents a hydrogen atom, a methyl group or a trifluoromethyl group.




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In the component (A), the amount of the structural unit (a1) based on the combined total of all structural units constituting the component (A) is preferably 20 to 80 mol %, more preferably 20 to 75 mol %, and still more preferably 25 to 70 mol %. When the amount of the structural unit (a1) is at least as large as the lower limit of the above-mentioned range, various lithography properties such as sensitivity, resolution and LWR are improved. On the other hand, when the amount of the structural unit (a1) is no more than the upper limit of the above-mentioned range, a good balance can be achieved with the other structural units.


The resist composition of the present invention preferably includes a structural unit (a2) described later, as well as the structural units (a0) and (a1).


(Structural Unit (a2))


The structural unit (a2) is a structural unit which contains a lactone-containing cyclic group and which does not fall under the definition of the structural unit (a0).


When the component (A1) is used for forming a resist film, the lactone-containing cyclic group within the structural unit (a2) is effective in improving the adhesion between the resist film and the substrate.


The aforementioned structural unit (a1) which contains a lactone-containing cyclic group falls under the definition of the structural unit (a2); however, such a structural unit is regarded as a structural unit (a1), and does not fall under the definition of the structural unit (a2).


The structural unit (a2) is preferably a structural unit represented by general formula (a2-1) shown below.




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In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Ya21 represents a single bond or a divalent linking group; La21 represents —O—, —COO—, —CON(R′)—, —OCO—, —CONHCO— or —CONHCS—; and R′ represents a hydrogen atom or a methyl group, provided that when La21 represents —O—, Ya21 does not represents —CO—; and Ra21 represents a lactone-containing cyclic group.


The divalent linking group for Ya21 is not particularly limited, and preferable examples thereof include a divalent hydrocarbon group which may have a substituent and a divalent linking group containing a hetero atom.


(Divalent Hydrocarbon Group which May have a Substituent)


The hydrocarbon group as a divalent linking group may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group.


An “aliphatic hydrocarbon group” refers to a hydrocarbon group that has no aromaticity. The aliphatic hydrocarbon group may be saturated or unsaturated. In general, the aliphatic hydrocarbon group is preferably saturated.


Examples of the aliphatic hydrocarbon group include a linear or branched aliphatic hydrocarbon group, and an aliphatic hydrocarbon group containing a ring in the structure thereof can be given. Specific examples thereof include the same group as exemplified above for Va1 in the aforementioned formula (a1-1).


The linear or branched aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include a fluorine atom, a fluorinated alkyl group of 1 to 5 carbon atoms, and a carbonyl group.


As examples of the aliphatic hydrocarbon group containing a ring in the structure thereof, a cyclic aliphatic hydrocarbon group which may have a substituent containing a hetero atom in the ring structure thereof (a group in which two hydrogen atoms have been removed from an aliphatic hydrocarbon ring), a group in which the cyclic aliphatic hydrocarbon group is bonded to the terminal of a linear or branched aliphatic hydrocarbon group, and a group in which the cyclic aliphatic hydrocarbon group is interposed within a linear or branched aliphatic hydrocarbon group, can be given. As the linear or branched aliphatic hydrocarbon group, the same groups as those described above can be used.


The cyclic aliphatic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.


Specific examples of the cyclic aliphatic hydrocarbon group include the same group as exemplified above for Va1 in the aforementioned formula (a1-1).


The cyclic aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group and a carbonyl group.


The alkyl group as the substituent is preferably an alkyl group of 1 to 5 carbon atoms, and a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group is most desirable.


The alkoxy group as the substituent is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group, and most preferably a methoxy group or an ethoxy group.


Examples of the halogen atom for the substituent include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferable.


Examples of the halogenated alkyl group for the substituent include groups in which part or all of the hydrogen atoms within the aforementioned alkyl groups has been substituted with the aforementioned halogen atoms.


In the cyclic aliphatic hydrocarbon group, part of the carbon atoms constituting the ring structure thereof may be substituted with a substituent containing a hetero atom. The substituent containing a hetero atom is preferably —O—, —C(═O)—O—, —S—, —S(═O)2—, or —S(═O)2—O—


Specific examples of the aromatic hydrocarbon group as a divalent hydrocarbon group include the same group as exemplified above for Va1 in the aforementioned formula (a1-1).


With respect to the aromatic hydrocarbon group, the hydrogen atom within the aromatic hydrocarbon group may be substituted with a substituent. For example, the hydrogen atom bonded to the aromatic ring within the aromatic hydrocarbon group may be substituted with a substituent. Examples of substituents include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, and a hydroxyl group.


The alkyl group as the substituent is preferably an alkyl group of 1 to 5 carbon atoms, and a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group is most desirable.


As the alkoxy group, the halogen atom and the halogenated alkyl group for the substituent, the same groups as the aforementioned substituent groups for substituting a hydrogen atom within the cyclic aliphatic hydrocarbon group can be used.


(Divalent Linking Group Containing a Hetero Atom)


With respect to a divalent linking group containing a hetero atom, a hetero atom is an atom other than carbon and hydrogen, and examples thereof include an oxygen atom, a nitrogen atom, a sulfur atom and a halogen atom.


In the case where Ya21 represents a divalent linking group containing a hetero atom, preferable examples of the linking group include —O—, —C(═O)—O—, —C(═O)—, —O—C(═O)—O—, —C(═O)—NH—, —NH— and —NH—C(═NH)— (wherein H may be substituted with a substituent such as an alkyl group or an acyl group), —S—, —S(═O)2—, —S(═O)2—O—, and a group represented by general formula —Y21—O—Y22—, —Y21—O—Y, —Y21—C(═O)—O—, —C(═O)—O—Y21—, —[Y21—C(═O)—O]m′—Y22— or —Y21—O—C(═O)—Y22— [in the formulae, each of Y21 and Y22 independently represents a divalent hydrocarbon group which may have a substituent, 0 represents an oxygen atom, and m′ represents an integer of 0 to 3].


When the divalent linking group containing a hetero atom represents —C(═O)—NH—, —NH—, or —NH—C(═NH)—, H may be substituted with a substituent such as an alkyl group, an acyl group or the like. The substituent (an alkyl group, an acyl group or the like) preferably has 1 to 10 carbon atoms, more preferably 1 to 8, and most preferably 1 to 5.


In formula Y21—O—Y22, —Y21—O—, —Y21—C(═O)—O—, —C(═O)—O—Y21—, —[Y21—C(═O)—O]m′—Y22— or —Y21—O—C(═O)—Y22—, Y21 and Y22 each independently represents a divalent hydrocarbon group which may have a substituent. Examples of the divalent hydrocarbon group include the same groups as those described above as the “divalent hydrocarbon group which may have a substituent” in the explanation of the aforementioned divalent linking group.


As Y21, a linear aliphatic hydrocarbon group is preferable, more preferably a linear alkylene group, still more preferably a linear alkylene group of 1 to 5 carbon atoms, and a methylene group or an ethylene group is particularly desirable.


As Y22, a linear or branched aliphatic hydrocarbon group is preferable, and a methylene group, an ethylene group or an alkylmethylene group is more preferable. The alkyl group within the alkylmethylene group is preferably a linear alkyl group of 1 to 5 carbon atoms, more preferably a linear alkyl group of 1 to 3 carbon atoms, and most preferably a methyl group.


In the group represented by the formula —[Y21—C(═O)—O]m′—Y22—, m′ represents an integer of 0 to 3, preferably an integer of 0 to 2, more preferably 0 or 1, and particularly preferably 1. Namely, it is particularly desirable that the group represented by the formula —[Y21—C(═O)—O]m′—Y22— is a group represented by the formula —Y21—C(═O)—O—Y22—. Among these, a group represented by the formula —(CH2)a′—C(═O)—O—(CH2)b′— is preferable. In the formula, a′ is an integer of 1 to 10, preferably an integer of 1 to 8, more preferably an integer of 1 to 5, still more preferably 1 or 2, and most preferably 1. b′ is an integer of 1 to 10, preferably an integer of 1 to 8, more preferably an integer of 1 to 5, still more preferably 1 or 2, and most preferably 1.


In the present invention, Ya21 preferably represents an ester bond [—C(═O)—O-], an ether bond (—O—), a linear or branched alkylene group, a combination of these, or a single bond.


In the formula (a2-1), Ra21 represents a lactone-containing cyclic group.


The term “lactone-containing cyclic group” refers to a cyclic group including a ring containing a —O—C(═O)— structure (lactone ring) in the ring skeleton thereof. The term “lactone ring” refers to a single ring containing a —O—C(═O)— structure, and this ring is counted as the first ring. A lactone-containing cyclic group in which the only ring structure is the lactone ring is referred to as a monocyclic group, and groups containing other ring structures are described as polycyclic groups regardless of the structure of the other rings. The lactone-containing cyclic group may be either a monocyclic group or a polycyclic group.


As the lactone-containing cyclic group, there is no particular limitation, and an arbitrary group may be used.


Specific examples include groups represented by general formulae (a2-r-1) to (a2-r-7) shown below. Hereafter, “*” represents a valence bond.




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In the formulae, each Ra′21 independently represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxy group, —COOR″, —OC(═O)R″, a hydroxyalkyl group or a cyano group; R″ represents a hydrogen atom or an alkyl group; A″ represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; n′ represents an integer of 0 to 2; and m′ represents 0 or 1.


In general formulae (a2-r-1) to (a2-r-7), A″ represents an oxygen atom, a sulfonyl group or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom (—O—) or a sulfur atom (—S—). As the alkylene group of 1 to 5 carbon atoms for A″, a linear or branched alkylene group is preferable, and examples thereof include a methylene group, an ethylene group, an n-propylene group and an isopropylene group. Examples of alkylene groups that contain an oxygen atom or a sulfur atom include the aforementioned alkylene groups in which —O— or —S— is bonded to the terminal of the alkylene group or present between the carbon atoms of the alkylene group. Specific examples of such alkylene groups include —O—CH2—, —CH2—O—CH2—, —S—CH2— and —CH2—S—CH2—. As A″, an alkylene group of 1 to 5 carbon atoms or —O— is preferable, more preferably an alkylene group of 1 to 5 carbon atoms, and most preferably a methylene group. As the alkyl group, alkoxy group, halogen atom, halogenated alkyl group, halogenated alkyl group, —COOR″, —OC(═O)R″ and hydroxyalkyl group for Ra′21, the same alkyl groups, alkoxy groups, halogenated alkyl groups, —COOR″, —OC(═O)R″ and hydroxyalkyl groups as those described above as the substituent which the divalent cyclic group for V0a1 in the general formula (a0) may have can be used.


Specific examples of the groups represented by the aforementioned general formulae (a2-r-1) to (a2-r-7) are shown below.




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Among these, groups represented by the general formulae (a2-r-1) and (a2-r-2) are preferable, and groups represented by the general formulae (r-1c-1-1) to (r-1c-1-7) and (r-1c-2-1) to (r-1c-2-13) are more preferable.


As the structural unit (a2) contained in the component (A1), 1 type of structural unit may be used, or 2 or more types may be used.


When the component (A1) contains the structural unit (a2), the amount of the structural unit (a2) based on the combined total of all structural units constituting the component (A1) is preferably 1 to 80 mol %, more preferably 5 to 70 mol %, still more preferably 10 to 65 mol %, and particularly preferably 10 to 60 mol %. When the amount of the structural unit (a2) is at least as large as the lower limit of the above-mentioned range, the effect of using the structural unit (a2) can be satisfactorily achieved. On the other hand, when the amount of the structural unit (a2) is no more than the upper limit of the above-mentioned range, a good balance can be achieved with the other structural units, and various lithography properties such as DOF and CDU and pattern shape can be improved.


The resist composition of the present invention may also include structural units (a3) to (a5), as well as the structural units (A), (a1) and (a2).


(Structural Unit (a3))


The structural unit (a3) is a structural unit containing a polar group-containing aliphatic hydrocarbon group (provided that the structural units that fall under the definition of structural units (a1), (a0) and (a2) are excluded).


When the component (A1) includes the structural unit (a3), it is presumed that the hydrophilicity of the component (A1) is enhanced, thereby contributing to improvement in resolution.


Examples of the polar group include a hydroxyl group, a cyano group, a carboxyl group, or a hydroxyalkyl group in which part of the hydrogen atoms of the alkyl group have been substituted with fluorine atoms, although a hydroxyl group is particularly desirable.


Examples of the aliphatic hydrocarbon group include linear or branched hydrocarbon groups (preferably alkylene groups) of 1 to 10 carbon atoms, and cyclic aliphatic hydrocarbon groups (cyclic groups). These cyclic groups may be either monocyclic or polycyclic, and can be selected appropriately from the multitude of groups that have been proposed for the resins of resist compositions designed for use with ArF excimer lasers. The cyclic group is preferably a polycyclic group, more preferably a polycyclic group of 7 to 30 carbon atoms.


Of the various possibilities, structural units derived from an acrylate ester that includes an aliphatic polycyclic group that contains a hydroxyl group, a cyano group, a carboxyl group or a hydroxyalkyl group in which part of the hydrogen atoms of the alkyl group have been substituted with fluorine atoms are particularly desirable. Examples of the polycyclic group include groups in which two or more hydrogen atoms have been removed from a bicycloalkane, tricycloalkane, tetracycloalkane or the like. Specific examples include groups in which two or more hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane. Of these polycyclic groups, a group in which two or more hydrogen atoms have been removed from adamantane, a group in which two or more hydrogen atoms have been removed from norbornane or a group in which two or more hydrogen atoms have been removed from tetracyclododecane are preferred industrially.


As the structural unit (a3), there is no particular limitation as long as it is a structural unit containing a polar group-containing aliphatic hydrocarbon group, and an arbitrary structural unit may be used.


The structural unit (a3) is preferably a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains a polar group-containing aliphatic hydrocarbon group.


When the hydrocarbon group within the polar group-containing aliphatic hydrocarbon group is a linear or branched hydrocarbon group of 1 to 10 carbon atoms, the structural unit (a3) is preferably a structural unit derived from a hydroxyethyl ester of acrylic acid. On the other hand, when the hydrocarbon group is a polycyclic group, structural units represented by formulae (a3-1), (a3-2) and (a3-3) shown below are preferable.




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In the formulae, R is as defined above; j is an integer of 1 to 3; k is an integer of 1 to 3; t′ is an integer of 1 to 3; l is an integer of 1 to 5; and s is an integer of 1 to 3.


In formula (a3-1), j is preferably 1 or 2, and more preferably 1. When j is 2, it is preferable that the hydroxyl groups be bonded to the 3rd and 5th positions of the adamantyl group. When j is 1, it is preferable that the hydroxyl group be bonded to the 3rd position of the adamantyl group.


j is preferably 1, and it is particularly desirable that the hydroxyl group be bonded to the 3rd position of the adamantyl group.


In formula (a3-2), k is preferably 1. The cyano group is preferably bonded to the 5th or 6th position of the norbornyl group.


In formula (a3-3), t′ is preferably 1. l is preferably 1. s is preferably 1. Further, it is preferable that a 2-norbonyl group or 3-norbonyl group be bonded to the terminal of the carboxy group of the acrylic acid. The fluorinated alkyl alcohol is preferably bonded to the 5th or 6th position of the norbornyl group.


As the structural unit (a3) contained in the component (A1), 1 type of structural unit may be used, or 2 or more types may be used.


The amount of the structural unit (a3) within the component (A1) based on the combined total of all structural units constituting the component (A1) is preferably 5 to 50 mol %, more preferably 5 to 40 mol %, and still more preferably 5 to 25 mol %.


When the amount of the structural unit (a3) is at least as large as the lower limit of the above-mentioned range, the effect of using the structural unit (a3) can be satisfactorily achieved. On the other hand, when the amount of the structural unit (a3) is no more than the upper limit of the above-mentioned range, a good balance can be achieved with the other structural units.


In the present invention, the component (A1) may contain the structural unit (a3). However, when the component (A1) doesn't contain the structural unit (a3), sensitivity tends to be increased. Therefore, in the present invention, the amount of the structural unit (a3) within the component (A1) based on the combined total of all structural units constituting the component (A1) is more preferably 0 mol %.


(Structural Unit (a4))


The structural unit (a4) is a structural unit containing an acid non-dissociable cyclic group. When the component (A1) includes the structural unit (a4), dry etching resistance of the resist pattern to be formed are improved. Further, the hydrophobicity of the component (A1) is further improved. Increase in the hydrophobicity contributes to improvement in terms of resolution, shape of the resist pattern and the like, particularly in an organic solvent developing process.


In the structural unit (a4), an “acid non-dissociable, aliphatic cyclic group” refers to a cyclic group which is not dissociated by the action of the acid generated from the component (B) upon exposure, and remains in the structural unit.


As the structural unit (a4), a structural unit which contains a non-acid-dissociable aliphatic cyclic group, and is also derived from an acrylate ester is preferable. Examples of this cyclic group include the same groups as those described above in relation to the aforementioned structural unit (a1), and any of the multitude of conventional groups used within the resin component of resist compositions for ArF excimer lasers or KrF excimer lasers (and particularly for ArF excimer lasers) can be used.


In consideration of industrial availability and the like, at least one polycyclic group selected from amongst a tricyclodecyl group, adamantyl group, tetracyclododecyl group, isobornyl group, and norbornyl group is particularly desirable. These polycyclic groups may be substituted with a linear or branched alkyl group of 1 to 5 carbon atoms.


Specific examples of the structural unit (a4) include units with structures represented by general formulae (a4-1) to (a4-7) shown below.




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In the formulae shown above, Rα represents a hydrogen atom, a methyl group or a trifluoromethyl group.


As the structural unit (a4) contained in the component (A1), 1 type of structural unit may be used, or 2 or more types may be used.


When the structural unit (a4) is included in the component (A1), the amount of the structural unit (a4) based on the combined total of all the structural units that constitute the component (A1) is preferably within the range from 1 to 30 mol %, and more preferably from 10 to 20 mol %.


The structural unit (a5) is a structural unit represented by the general formula (a2-1). In the formula (a2-1) Ra21 represents a carbonate-containing cyclic group or an —SO2-containing cyclic group.


An “—SO2— containing cyclic group” refers to a cyclic group having a ring containing —SO2— within the ring structure thereof, i.e., a cyclic group in which the sulfur atom (S) within —SO2— forms part of the ring skeleton of the cyclic group. The ring containing —SO2— within the ring skeleton thereof is counted as the first ring. A cyclic group in which the only ring structure is the ring that contains —SO2— in the ring skeleton thereof is referred to as a monocyclic group, and a group containing other ring structures is described as a polycyclic group regardless of the structure of the other rings. The —SO2— containing cyclic group may be either a monocyclic group or a polycyclic group.


As the —SO2— containing cyclic group as a cyclic hydrocarbon group for Ra21, a cyclic group containing —O—SO2— within the ring skeleton thereof, i.e., a cyclic group containing a sultone ring in which —O—S— within the —O—SO2— group forms part of the ring skeleton thereof is particularly desirable. More specific examples of the —SO2— containing cyclic group include groups represented by general formulae (a5-r-1) to (a5-r-4) shown below.




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In the formulae, each Ra′51 independently represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxy group, —COOR″, —OC(═O)R″, a hydroxyalkyl group or a cyano group; R″ represents a hydrogen atom or an alkyl group; A″ represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; and n′ represents an integer of 0 to 2.


In general formulae (a5-r-1) to (a5-r-4), A″ is the same as defined for A″ in general formulae (a2-r-1) to (a2-r-7). Examples of the alkyl group, alkoxy group, halogen atom, halogenated alkyl group, —COOR″, —OC(═O)R″ and hydroxyalkyl group for Ra′51 include the same groups as those described above in the explanation of Ra′21 in the general formulae (a2-r-1) to (a2-r-7).


Specific examples of the groups represented by the aforementioned general formulae (a5-r-1) to (a5-r-4) are shown below. In the formulae shown below, “Ac” represents an acetyl group.




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As the —SO2— containing cyclic group, a group represented by the aforementioned general formula (a5-r-1) is preferable, at least one member selected from the group consisting of groups represented by the aforementioned chemical formulae (r-s1-1-1), (r-s1-1-18), (r-s1-3-1) and (r-s1-4-1) is more preferable, and a group represented by chemical formula (r-s1-1-1) is most preferable.


The term “carbonate-containing cyclic group” refers to a cyclic group including a ring containing a —O—C(═O)—O— structure (carbonate ring) in the ring skeleton thereof. The term “carbonate ring” refers to a single ring containing a —O—C(═O)—O— structure, and this ring is counted as the first ring. A carbonate-containing cyclic group in which the only ring structure is the carbonate ring is referred to as a monocyclic group, and groups containing other ring structures are described as polycyclic groups regardless of the structure of the other rings. The carbonate-containing cyclic group may be either a monocyclic group or a polycyclic group.


The carbonate-containing cyclic group for Ra21 as a cyclic hydrocarbon group is not particularly limited, and an arbitrary structural unit may be used. Specific examples include groups represented by general formulae (ax3-r-1) to (ax3-r-3) shown below.




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In the formulae, each Ra′x31 independently represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxy group, —COOR″, —OC(═O)R″, a hydroxyalkyl group or a cyano group; R″ represents a hydrogen atom or an alkyl group; A″ represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; p′ represents an integer of 0 to 3; and q′ represents 0 or 1.


In general formulae (ax3-r-1) to (ax3-r-3), A″ is the same as defined for A″ in general formula (a2-r-1).


Examples of the alkyl group, alkoxy group, halogen atom, halogenated alkyl group, —COOR″, —OC(═O)R″ and hydroxy alkyl group for Ra′x31 include the same groups as those exemplified for


Ra′21 in the formulae (a2-r-1) to (a2-r-7).


Specific examples of the groups represented by the aforementioned general formulae (ax3-r-1) to (ax3-r-3) are shown below.




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Among the examples shown above, an —SO2— containing cyclic group is preferable, a group represented by the general formula (a5-r-1) is more preferable, and a group represented by any one of the chemical formulae (r-s1-1-1) and (r-s1-1-18) is still more preferable.


As the structural unit (a5) contained in the component (A1), 1 type of structural unit may be used, or 2 or more types may be used.


When the component (A1) contains the structural unit (a5), the amount of the structural unit (a5) based on the combined total of all structural units constituting the component (A1) is preferably 1 to 80 mol %, more preferably 5 to 70 mol %, still more preferably 10 to 65 mol %, and particularly preferably 10 to 60 mol %. When the amount of the structural unit (a5) is at least as large as the lower limit of the above-mentioned range, the effect of using the structural unit (a5) can be satisfactorily achieved. On the other hand, when the amount of the structural unit (a5) is no more than the upper limit of the above-mentioned range, a good balance can be achieved with the other structural units, and various lithography properties such as DOF and CDU and pattern shape can be improved.


The component (A1) can be obtained, for example, by a conventional radical polymerization or the like of the monomers corresponding with each of the structural units, using a radical polymerization initiator such as azobisisobutyronitrile (AIBN) or dimethyl 2,2′-azobis(isobutyrate).


Furthermore, in the component (A1), by using a chain transfer agent such as HS—CH2—CH2—CH2—C(CF3)2—OH, a —C(CF3)2—OH group can be introduced at the terminals of the component (A1). Such a copolymer having introduced a hydroxyalkyl group in which some of the hydrogen atoms of the alkyl group are substituted with fluorine atoms is effective in reducing developing defects and LER (line edge roughness: unevenness of the side walls of a line pattern).


The weight average molecular weight (Mw) (the polystyrene equivalent value determined by gel permeation chromatography) of the component (A1) is not particularly limited, but is preferably 1,000 to 50,000, more preferably 1,500 to 30,000, and most preferably 2,000 to 20,000. When the weight average molecular weight is no more than the upper limit of the above-mentioned range, the resist composition exhibits a satisfactory solubility in a resist solvent. On the other hand, when the weight average molecular weight is at least as large as the lower limit of the above-mentioned range, dry etching resistance and the cross-sectional shape of the resist pattern becomes satisfactory.


As the component (A1), one type may be used alone, or two or more types may be used in combination.


In the base component (A), the amount of the component (A1) based on the total weight of the component (A) is preferably 25% by weight or more, more preferably 50% by weight or more, still more preferably 75% by weight or more, and may be even 100% by weight. When the amount of the component (A1) is 25% by weight or more, various lithography properties are improved.


In the resist composition of the present invention, as the component (A), one type may be used, or two or more types may be used in combination.


In the resist composition of the present invention, the amount of the component (A) can be appropriately adjusted depending on the thickness of the resist film to be formed, and the like.


<Acid Generator Component; Component (B)>


The resist composition of the present invention contains an acid generator component (B) which generates acid upon exposure (hereafter, referred to as “component (B)”), and the acid generator component (B) includes a compound (B1) represented by general formula (b1) shown below (hereafter, sometimes referred to as “component (B1)”).




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In the formula (b1), R11 represents a cyclic group of 5 to 30 carbon atoms which may have a substituent; V11 represents a single bond or an alkylene group of 1 to 6 carbon atoms; L11 represents an ester bond; represents an alkylene group of 1 to 5 carbon atoms which may have a fluorine atom; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.


In the formula (b1), R11 represents a cyclic group of 5 to 30 carbon atoms which may have a substituent.


The cyclic group is preferably a cyclic hydrocarbon group of 5 to 30 carbon atoms, and the cyclic hydrocarbon group may be either an aromatic hydrocarbon group or an aliphatic hydrocarbon group.


As the aromatic hydrocarbon group for R11, groups in which one hydrogen atom has been removed from an aromatic hydrocarbon ring described above in relation to the divalent aromatic hydrocarbon group for Va1 in the formula (a1-1) or an aromatic compound containing two or more aromatic ring can be mentioned, and a phenyl group or a naphthyl group is preferable.


As the cyclic aliphatic hydrocarbon group for R11, groups in which one hydrogen atom has been removed from a monocycloalkane or a polycycloalkane exemplified above in the explanation of the divalent aliphatic hydrocarbon group for Va1 in the formula (a1-1) can be mentioned, and a polycycloalkane is preferable. Among these, as polycycloalkanes, polycycloalkanes containing a bridged ring-type polycyclic skeleton such as an adamantyl group, a norbornyl group and the like, and polycycloalkanes containing a condensed ring-type polycyclic skeleton such as a cyclic group containing a steroid skeleton can be mentioned. In the present specification, the term “steroid skeleton” means a skeleton (st) in which three 6-membered rings and one 5-membered ring have been linked, and the structure thereof is shown below.




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Further, the cyclic hydrocarbon group for RH may contain a hetero atom like as a heterocycle, and specific examples thereof include lactone-containing cyclic groups represented by the aforementioned general formulae (a2-r-1) to (a2-r-7), —SO2— containing cyclic groups represented by the aforementioned formulae (a5-r-1) to (a5-r-4) and heterocycle groups represented by the aforementioned general formulae (r-hr-1) to (r-hr-16).


As the substituent for substituting the cyclic hydrocarbon group for RH, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, an oxo group, a nitro group or the like can be used.


The alkyl group as the substituent is preferably an alkyl group of 1 to 8 carbon atoms, and a methyl group, an ethyl group, a propyl group, an n-butyl group, a tert-butyl group or 1,5-dimethylhexyl group is desirable.


The alkoxy group as the substituent is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group, and most preferably a methoxy group or an ethoxy group.


Examples of the halogen atom as the substituent include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferable.


Example of the halogenated alkyl group as a substituent includes a group in which a part or all of the hydrogen atoms within an alkyl group of 1 to 5 carbon atoms such as a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group have been substituted with the aforementioned halogen atoms.


The cyclic group within R11 preferably has 1 to 5 substituents. When R11 is a polycycloalkane containing a bridged ring-type polycyclic skeleton, R11 preferably has 1 to 3 substituents. When the substituent is an alkyl groups, R11 preferably has 2 to 3 substituents. When the substituent is a hydroxyl group or an oxo group, R11 preferably has 1 substituent. When R11 is a polycycloalkane containing a condensed ring-type polycyclic skeleton, R11 preferably has 3 to 5 substituents. When the cyclic group within R11 has a substituent, LWR is further improved.


When the polycycloalkanes containing a condense ring-type polycyclic skeleton is a cyclic group containing a steroid skeleton, examples thereof are shown below. The “*” in the formula represents a valence bond.




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In the formula (b1), V11 represents a single bond or an alkylene group of 1 to 6 carbon atoms. Specific examples of the alkylene group for V11 include a methylene group [—CH2-]; alkylmethylene groups such as—CH(CH3)—, —CH(CH2CH3)—, —C(CH3)2— and —C(CH3)(CH2CH3)—, —C(CH3)(CH2CH2CH3)— and —C(CH2CH3)2—; an ethylene group [—CH2CH2-]; alkylethylene groups such as —CH(CH3)CH2—, —CH(CH3)CH(CH3)—, —C(CH3)2CH2— and —CH(CH2CH3)CH2—; and alkylpropylene groups such as —CH(CH3)CH2CH2—.


In the present invention, V11 is preferably a single bond or an alkylene group of 1 to 5 carbon atoms; when R11 is the aforementioned aromatic hydrocarbon group, a monocycloalkane, a polycycloalkane containing a bridged ring-type polycyclic skeleton, or the aforementioned cyclic hydrocarbon group containing a hetero atom, V11 is more preferably a single bond or a methylene group; and when R11 is the aforementioned polycycloalkane containing a condensed ring-type polycyclic skeleton, V11 is more preferably a single bond or an alkylpropylene group.


In the formula (b1), L11 represents an ester bond (—C(═O)O—, —O—C(═O)—). When L11 is —C(═O)O— (that is, when the ester bond is arranged to form V11—C(═O)O—Y11), MEEF is improved.


Y11 represents an alkylene group of 1 to 5 carbon atoms which may have a fluorine atom.


In the present invention, as Y11, a fluorinated alkylene group of 1 to 4 carbon atoms is preferable, a fluorinated alkylene group of 1 to 2 carbon atoms is more preferable, and —CF2—, —CH2CF2—, and —CF2CF2— is still more preferable.


Specific examples of the anion moiety of the compound represented by formula (b1) are shown below.




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In the formula (b1), m is an integer of 1 or more; and Mm+ is an organic cation having a valency of m. Further, as examples of the organic cation having a valency of m in the formula (hi), the same cations as those for M′m+ in general formulae (b-1) to (b-3) described later can also be given.


As the component (B), one type of these compounds may be used alone, or two or more types may be used in combination.


The amount of the component (B), relative to 100 parts by weight of the component (A) is preferably from 0.5 to 60 parts by weight, more preferably from 1 to 50 parts by weight, and still more preferably from 1 to 40 parts by weight. When the amount of the component (B) is within the above-mentioned range, formation of a resist pattern can be satisfactorily performed. Further, by virtue of the above-mentioned range, when each of the components are dissolved in an organic solvent, a uniform solution can be obtained and the storage stability becomes satisfactory.


The component (B) may include an acid generator component (B2) describe later, as well as the component (B1).


As the component (B2), there is no particular limitation, and any of the known acid generators used in conventional chemically amplified resist compositions can be used.


Examples of these acid generators are numerous, and include onium salt acid generators such as iodonium salts and sulfonium salts; oxime sulfonate acid generators; diazomethane acid generators such as bisalkyl or bisaryl sulfonyl diazomethanes and poly(bis-sulfonyl)diazomethanes; nitrobenzylsulfonate acid generators; iminosulfonate acid generators; and disulfone acid generators. Among these, onium salt acid generators are preferably used.


Examples of the onium salt acid generators include a compound represented by general formula (b-1) shown below (hereafter, sometimes referred to as “component (b-1)”), a compound represented by general formula (b-2) shown below (hereafter, sometimes referred to as “component (b-2)”) and a compound represented by general formula (b-3) shown below (hereafter, sometimes referred to as “component (b-3)”).




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In the formulae, R101 and R104 to R108 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, provided that, R104 and R105 may be mutually bonded to form a ring; provided that, two of R106 to R107 may be mutually bonded to form a ring; R102 represents a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms; Y101 represents a single bond or a divalent linking group containing an oxygen atom; V101 to V103 each independently represents a single bond, an alkylene group or a fluorinated alkylene group; L101 and L102 each independently represents a single bond or an oxygen atom; L103 to L105 each independently represents a single bond, —CO— or —SO2—; and M′m+ represents an organic cation having a valency of m, provided that, the organic cation represented by the formula (b1) is excluded from the compound represented by the formula (b-1).


{Anion Moiety}


Anion Moiety of Component (b-1)


In the formula (b-1), R101 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent.


(Cyclic Group which May have a Substituent)


The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be either an aromatic hydrocarbon group or an aliphatic hydrocarbon group.


As the aromatic hydrocarbon group, groups in which one hydrogen atom has been removed from an aromatic hydrocarbon ring described above in relation to the divalent aromatic hydrocarbon group for Va1 in the formula (a1-1) or an aromatic compound containing two or more aromatic ring can be mentioned, and a phenyl group or a naphthyl group is preferable.


As the cyclic aliphatic hydrocarbon group, groups in which one hydrogen atom has been removed from a monocycloalkane or a polycycloalkane exemplified above in the explanation of the divalent aliphatic hydrocarbon group for Va1 in the formula (a1-1) can be mentioned, and an adamantyl group or a norbornyl group is preferable.


Further, the cyclic hydrocarbon group may contain a hetero atom like as a heterocycle, and specific examples thereof include lactone-containing cyclic groups represented by the aforementioned general formulae (a2-r-1) to (a2-r-7), —SO2— containing cyclic groups represented by the aforementioned formulae (a5-r-1) to (a5-r-4) and heterocycle groups represented by the aforementioned general formulae (r-hr-1) to (r-hr-16).


As the substituent for substituting the cyclic hydrocarbon group, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group or the like can be used.


The alkyl group as the substituent is preferably an alkyl group of 1 to 5 carbon atoms, and a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group is most desirable.


The alkoxy group as the substituent is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group, and most preferably a methoxy group or an ethoxy group.


Examples of the halogen atom as the substituent include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferable.


Example of the halogenated alkyl group as a substituent includes a group in which a part or all of the hydrogen atoms within an alkyl group of 1 to 5 carbon atoms such as a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group have been substituted with the aforementioned halogen atoms.


(Chain-Like Alkyl Group which May have a Substituent)


The chain-like alkyl group for R101 may be either linear or branched.


The linear alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 15, and most preferably 1 to 10. Specific examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a tridecyl group, an isotridecyl group, a tetradecyl group, a pentadecyl group, a hexadecyl group, an isohexadecyl group, a heptadecyl group, an octadecyl group, a nonadecyl group, an icosyl group, a henicosyl group and a docosyl group.


The branched alkyl group preferably has 3 to 20 carbon atoms, more preferably 3 to 15, and most preferably 3 to 10. Specific examples include a 1-methylethyl group, a 1-methylpropyl group, a 2-methylpropyl group, a 1-methylbutyl group, a 2-methylbutyl group, a 3-methylbutyl group, a 1-ethylbutyl group, a 2-ethylbutyl group, a 1-methylpentyl group, a 2-methylpentyl group, a 3-methylpentyl group and a 4-methylpentyl group.


(Chain-Like Alkenyl Group which May have a Substituent)


The chain-like alkenyl group for R101 may be linear or branched, and preferably has 2 to 10 carbon atoms, more preferably 2 to 5 carbon atoms, still more preferably 2 to 4 carbon atoms, and particularly preferably 3 carbon atoms. Examples of linear alkenyl groups include a vinyl group, a propenyl group (an allyl group) and a butynyl group. Examples of branched alkenyl groups include a 1-methylpropenyl group and a 2-methylpropenyl group.


Among the above-mentioned examples, as the chain-like alkenyl group, a propenyl group is particularly desirable.


As the substituent for substituting the chain-like alkyl group or alkenyl group for R101, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, the same cyclic group as described above for R101 or the like can be used.


Among these, in the present specification, as R101, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent is preferable.


In the formula (b-1), Y101 represents a single bond or a divalent linking group containing an oxygen atom.


In the case where Y101 is a divalent linking group containing an oxygen atom, Y101 may contain an atom other than an oxygen atom. Examples of atoms other than an oxygen atom include a carbon atom, a hydrogen atom, a sulfur atom and a nitrogen atom.


Examples of divalent linkage groups containing an oxygen atom include non-hydrocarbon, oxygen atom-containing linking groups such as an oxygen atom (an ether bond; —O—), an ester bond (—C(═O)—O—), an oxycarbonyl group (—O—C(═O)—), an amide bond (—C(═O)—NH—), a carbonyl group (—C(═O)—) and a carbonate group (—O—C(═O)—O—);


and a combination of any of the aforementioned non-hydrocarbon, oxygen atom-containing linking groups with an alkylene group. Furthermore, the combinations may have a sulfonyl group (—SO2—) bonded thereto. As the combination, the linking groups represented by formulae (y-a1-1) to (y-a1-7) shown below can be mentioned.




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In the formulae, V′101 represents a single bond or an alkylene group of 1 to 5 carbon atoms; and V′102 represents a divalent saturated hydrocarbon group of 1 to 30 carbon atoms.


The divalent saturated hydrocarbon group for V′102 is preferably an alkylene group of 1 to 30 carbon atoms.


As the alkylene group for V′101 and V′102, a linear alkylene group or a branched alkylene group can be used, and a linear alkylene group is preferable.


Specific examples of the alkylene group for V′101 and V′102 include a methylene group [—CH2-]; alkylmethylene groups such as —CH(CH3)—, —CH(CH2CH3)—, —C(CH3)2—, —C(CH3)(CH2CH3)—, —C(CH3)(CH2CH2CH3)— and —C(CH2CH3)2—; an ethylene group [—CH2CH2-]; alkylethylene groups such as —CH(CH3)CH2—, —CH(CH3)CH(CH3)—, —C(CH3)2CH2— and —CH(CH2CH3)CH2—; a trimethylene group (n-propylene group)[—CH2CH2CH2-]; alkyltrimethylene groups such as —CH(CH3)CH2CH2— and —CH2CH(CH3)CH2—; a tetramethylene group [—CH2CH2CH2CH2-]; alkyltetramethylene groups such as —CH(CH3)CH2CH2CH2— and —CH2CH(CH3)CH2CH2—; and a pentamethylene group [—CH2CH2CH2CH2CH2-].


Further, part of methylene group within the alkylene group for V′101 and V′102 may be substituted with a divalent aliphatic cyclic group of 5 to 10 carbon atoms. The aliphatic cyclic group is preferably a divalent group in which one hydrogen atom has been removed from the cyclic aliphatic hydrocarbon group described above for Ra′3 in the aforementioned formula (a1-r-1), and a cyclohexylene group, 1,5-adamantylene group or 2,6-adamantylene group is more preferable.


Y101 is preferably a divalent linking group containing an ether bond or an ester bond, and linking groups represented by the aforementioned formulae (y-a1-1) to (y-a1-5) are preferable.


In the formula (b-1), V101 represents a single bond, an alkylene group or a fluorinated alkylene group. The alkylene group or fluorinated alkylene group for V101 preferably has 1 to 4 carbon atoms. As the fluorinated alkylene group for V101, a group in which part or all of the hydrogen atoms within the aforementioned alkylene group for V101 has been substituted with fluorine atoms can be used. Among these, V101 is preferably a single bond or a fluorinated alkylene group of 1 to 4 carbon atoms.


In the formula (b-1), R102 represents a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms. R102 is preferably a fluorine atom or a perfluoroalkyl group of 1 to 5 carbon atoms, and is more preferably a fluorine atom.


As specific examples of anion moieties of the formula (b-1),


when Y101 is a single bond, fluorinated alkylsulfonate anions such as a trifluoromethanesulfonate anion or a perfluorobutanesulfonate anion can be mentioned; and when Y101 is a divalent linking group containing an oxygen atom, anions represented by formulae (an-1) to (an-3) shown below can be mentioned.




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In the formulae, R″101 represents a chain-like alkyl group which may have a substituent, a chain-like alkenyl group which may have a substituent, an aliphatic cyclic group which may have a substituent, a group represented by any one of the aforementioned formulae (r-hr-1) to (r-hr-6), or a chain-like alkyl group which may have a substituent; R″102 represents a chain-like alkyl group which may have a substituent, a chain-like alkenyl group which may have a substituent, or an aliphatic cyclic group having 3 or 4 carbon atoms which may have a substituent; R″103 represents an aromatic cyclic group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a chain-like alkenyl group which may have a substituent; V″101 represents a fluorinated alkylene group; L″101 represents —C(═O)— or —SO2—, provided that, when L″101 is —C(═O)—, n″ is 1; v″ each independently represents an integer of 0 to 3; q″ each independently represents an integer of 1 to 20; and n″ represents 0 or 1.


As the aliphatic cyclic group for R″101, R″102 and R″103 which may have a substituent, the same groups as the cyclic aliphatic hydrocarbon group described above in the explanation of “cyclic group which may have a substituent” are preferable. As the substituent, the same groups as those described above for substituting the cyclic aliphatic hydrocarbon group in the explanation of “cyclic group which may have a substituent” can be mentioned.


As the aromatic cyclic group for R″103 which may have a substituent, the same groups as the aromatic hydrocarbon group exemplified above as a cyclic hydrocarbon group in the explanation of “cyclic group which may have a substituent” described above are preferable. As the substituent, the same groups as those described above for substituting the aromatic hydrocarbon group in the explanation of “cyclic group which may have a substituent” can be mentioned.


As the chain-like alkyl group for R″101 which may have a substituent, the same groups exemplified as the chain-like alkyl group for R101 are preferable. As the chain-like alkenyl group for R″103 which may have a substituent, the same groups exemplified above as the chain-like alkenyl group for R101 are preferable. V″101 is preferably a fluorinated alkylene group of 1 to 3 carbon atoms, and particularly preferably —CF2—, —CF2CF2—, —CHFCF2—, —CF(CF3)CF2— or —CH(CF3)CF2—.


Anion Moiety of Component (b-2)


In formula (b-2), R104 and R105 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, and is the same groups as those defined above for “cyclic group which may have a substituent” in the aforementioned formula (b-1), provided that, R104 and R105 may be mutually bonded to form a ring.


As R104 and R105, a chain-like alkyl group which may have a substituent is preferable, and a linear or branched alkyl group or a linear or branched fluorinated alkyl group is more preferable.


The chain-like alkyl group preferably has 1 to 10 carbon atoms, preferably 1 to 7, and more preferably 1 to 3. The smaller the number of carbon atoms of the chain-like alkyl group for R104 and R105 within the above-mentioned range of the number of carbon atoms, the more the solubility in a resist solvent is improved. Further, in the chain-like alkyl group for R104 and R105, it is preferable that the number of hydrogen atoms substituted with fluorine atoms is as large as possible because the acid strength increases and the transparency to high energy radiation of 200 nm or less or electron beam is improved. The fluorination ratio of the chain-like alkyl group is preferably from 70 to 100%, more preferably from 90 to 100%, and it is particularly desirable that the chain-like alkyl group be a perfluoroalkyl group in which all hydrogen atoms are substituted with fluorine atoms.


In formula (b-2), V102 and V103 each independently represents a single bond, an alkylene group or a fluorinated alkylene group, and is the same groups as those defined above for V101 in the aforementioned formula (b-1).


In the formula (b-2), L101 and L102 each independently represents a single bond or an oxygen atom.


Anion Moiety of Component (b-3)


In formula (b-3), R106 to R108 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, and is the same groups as those defined above for R101 in the aforementioned formula (b-1).


L103 to L105 each independently represents a single bond, —CO— or —SO2—.


{Cation Moiety}


In the formulae (b-1), (b-2) and (b-3), as M′m+, a sulfonium cation or an iodonium cation is preferable, and cation moieties represented by general formulae (ca-1) to (ca-4) shown below are particularly preferable.




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In the formulae, each of R201 to R207, R211 and R212 independently represents an aryl group which may have a substituent, an alkyl group which may have a substituent or an alkenyl group which may have a substituent; R201 to R203, R206 and R207, and R211 and R212 may be mutually bonded to form a ring with the sulfur atom; R208 and R209 each represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms; R210 represents an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent or an —SO2— containing cyclic group which may have a substituent; L201 represents —C(═O)— or —C(═O)—O—; Y201 each independently represents an arylene group, an alkylene group or an alkenylene group; x represents 1 or 2; and W201 represents a linking group having a valency of (x+1).


As the aryl group for R201 to R207, R211 and R212, an unsubstituted aryl group of 6 to 20 carbon atoms can be mentioned, and a phenyl group or a naphthyl group is preferable.


As the alkyl group for R201 to R207, R211 and R212, a chain-like or cyclic alkyl group of 1 to 30 carbon atoms is preferable.


The alkenyl group for R201 to R207, R211 and R212 preferably has 2 to 10 carbon atoms.


Specific examples of the substituent which R201 to R207, R210 and R212 may have include an alkyl group, a halogen atom, a halogenated alkyl group, a carbonyl group, a cyano group, an amino group, an aryl group, an arylthio group and groups represented by formulae (ca-r-1) to (ca-r-7) shown below.


As the aryl group within the arylthio group as a substituent, the same aryl groups as those described above for R101 can be mentioned, and specific examples of the arylthio group include a pheylthio group or a biphenylthio group.




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In the formulae, R′201 each independently represents a hydrogen atom, a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent.


As the cyclic group which may have a substituent, the chain-like alkyl group which may have a substituent and the chain-like alkenyl group which may have a substituent for R′201, the same groups as those described above for R101 in the aforementioned formula (b-1) can be mentioned. As the cyclic group which may have a substituent and chain-like alkyl group which may have a substituent, the same groups as those described above for the acid dissociable group represented by the aforementioned formula (a1-r-2) can be also mentioned.


When R201 to R203, R206 and R207, and R211 and R212 are mutually bonded to form a ring with the sulfur atom, these groups may be mutually bonded via a hetero atom such as a sulfur atom, an oxygen atom or a nitrogen atom, or a functional group such as a carbonyl group, —SO—, —SO2—, —SO3—, —COO—, —CONH— or —N(RN)— (wherein RN represents an alkyl group of 1 to 5 carbon atoms). As the ring to be formed, the ring containing the sulfur atom in the skeleton thereof is preferably a 3 to 10-membered ring, and particularly preferably a 5 to 7-membered ring. Examples of the formed ring include a thiophene ring, a thiazole ring, a benzothiophene ring, a thianthrene ring, a dibenzothiophene ring, a 9H-thioxanthene ring, a thioxanthone ring, a phenoxathiin ring, a tetrahydrothiophenium ring and a tetrahydrothiopyranium ring.


R208 and R209 each independently represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms, is preferably a hydrogen atom or an alkyl group of 1 to 3 carbon atoms, and when R208 and R209 each represents an alkyl group, R208 and R209 may be mutually bonded to form a ring.


R210 represents an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent or an —SO2-containing cyclic group which may have a substituent.


As the aryl group for R210, an unsubstituted aryl group of 6 to 20 carbon atoms can be mentioned, and a phenyl group or a naphthyl group is preferable.


As the alkyl group for R210, a chain-like or cyclic alkyl group of 1 to 30 carbon atoms is preferable.


The alkenyl group for R210 preferably has 2 to 10 carbon atoms.


As the —SO2— containing cyclic group for R210 which may have a substituent, the same groups as the “—SO2— containing cyclic group” for Ra21 in the general formula (a2-1) can be mentioned, and the group represented by the aforementioned general formula (a5-r-1) is preferable.


Y201 each independently represents an arylene group, an alkylene group or an alkenylene group.


As the arylene group for Y201, a group in which one hydrogen atom has been removed from an aryl group exemplified as an aromatic hydrocarbon group for R101 in the aforementioned formula (b-1) can be mentioned.


As the alkylene group and the alkenylene group for Y201, the same aliphatic hydrocarbon group as those described above for the divalent hydrocarbon group for Va1 in the aforementioned general formula (a1-1) can be mentioned.


In the formula (ca-4), x represents 1 or 2.


W201 represents a linking group having a valency of (x+1), that is, a divalent or trivalent linking group.


As the divalent linking group for W201, a divalent hydrocarbon groups which may have a substituent is preferable, and as examples thereof, the same hydrocarbon group as those described above for Ya21 in the general formula (a2-1) can be mentioned. The divalent linking group for W201 may be linear, branched or cyclic, and cyclic is more preferable. Among these, an arylene group having two carbonyl groups, each bonded to the terminal thereof is preferable. As the arylene group, a phenylene group and a naphthylene group can be mentioned. Of these, a phenylene group is particularly desirable.


As the trivalent linking group for W201, a group in which one hydrogen atom has been removed from the aforementioned divalent linking group for W201, and a group in which the divalent linking group has been bonded to an another divalent linking group can be mentioned. The trivalent linking group for W201 is preferably an arylene group having two carbonyl groups bonded thereto.


Specific examples of preferable cations represented by formula (ca-1) include cations represented by formulae (ca-1-1) to (ca-1-63) shown below.




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In the formulae, g1, g2 and g3 represent recurring numbers, wherein g1 is an integer of 1 to 5, g2 is an integer of 0 to 20, and g3 is an integer of 0 to 20.




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In the formulae, R″201 represents a hydrogen atom or a substituent, and as the substituent, the same groups as those described above for substituting the R201 to R207 and R210 to R212 can be mentioned.


Specific examples of preferable cations represented by the formula (ca-3) include cations represented by formulae (ca-3-1) to (ca-3-6) shown below.




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Specific examples of preferable cations represented by formula (ca-4) include cations represented by formulae (ca-4-1) to (ca-4-2) shown below.




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As the component (B2), one type of these acid generators may be used alone, or two or more types may be used in combination.


When the resist composition of the present invention contains the component (B2), the amount of the component (B2) relative to 100 parts by weight of the component (A) is preferably within a range from 0.5 to 60 parts by weight, more preferably from 1 to 50 parts by weight, and still more preferably from 1 to 40 parts by weight. When the amount of the component (B2) is within the above-mentioned range, formation of a resist pattern can be satisfactorily performed. Further, by virtue of the above-mentioned range, when each of the components are dissolved in an organic solvent, a uniform solution can be obtained and the storage stability becomes satisfactory.


In the resist composition of the present invention, the amount of the component (B1) based on the entire component (B) is preferably 50% by weight or more, and more preferably 80 to 100% by weight, in terms of improving the effect of the present invention.


<Acid Diffusion Control Agent Component; Component (D)>


Moreover, the resist composition of the present invention may include an acid diffusion control agent component (hereafter, frequently referred to as “component (D)”), in addition to the component (A), or in addition to the component (A) and the component (B).


The component (D) functions as an acid diffusion control agent, i.e., a quencher which traps the acid generated from the component (B) and the like upon exposure.


In the present invention, the component (D) may be a photodecomposable base (D1) (hereafter, referred to as “component (D1)”) which is decomposed upon exposure and then loses the ability of controlling of acid diffusion, or a nitrogen-containing organic compound (D2) (hereafter, referred to as “component (D2)”) which does not fall under the definition of component (D1).


[Component (D1)]


When a resist pattern is formed using a resist composition containing the component (D1), the contrast between exposed portions and unexposed portions is improved.


The component (D1) is not particularly limited, as long as it is decomposed upon exposure and then loses the ability of controlling of acid diffusion. As the component (D1), at least one compound selected from the group consisting of a compound represented by general formula (d1-1) shown below (hereafter, referred to as “component (d1-1)”), a compound represented by general formula (d1-2) shown below (hereafter, referred to as “component (d1-2)”) and a compound represented by general formula (d1-3) shown below (hereafter, referred to as “component (d1-3)”) is preferably used.


At exposed portions, the components (d1-1) to (d1-3) are decomposed and then lose the ability of controlling of acid diffusion (i.e., basicity), and therefore the components (d1-1) to (d1-3) cannot function as a quencher, whereas at unexposed portions, the components (d1-1) to (d1-3) function as a quencher.




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In the formulae, Rd1 to Rd4 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent; provided that, in the formula (d1-2), the carbon atom within the Rd2 adjacent to the sulfur atom has no fluorine atom bonded thereto; Yd′ represents a single bond or a divalent linking group; and Mm+ each independently represents a cation having a valency of m.


{Component (d1-1)}


Anion Moiety


In formula (d1-1), Rd1 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, and is the same groups as those defined above for R101.


Among these, as the group for Rd1, an aromatic hydrocarbon group which may have a substituent, an aliphatic cyclic group which may have a substituent and a chain-like hydrocarbon group which may have a substituent are preferable. As the substituents which these groups may have, a hydroxy group, a fluorine atom or a fluorinated alkyl group is preferable.


The aromatic hydrocarbon group is preferably a phenyl group or a naphthyl group.


Examples of the aliphatic cyclic group include groups in which one or more hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane.


As the chain-like hydrocarbon group, a chain-like alkyl group is preferable. The chain-like alkyl group preferably has 1 to 10 carbon atoms, and specific examples thereof include a linear alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl or a decyl group, and a branched alkyl group such as a 1-methylethyl group, a 1-methylpropyl group, a 2-methylpropyl group, a 1-methylbutyl group, a 2-methylbutyl group, a 3-methylbutyl group, a 1-ethylbutyl group, a 2-ethylbutyl group, a 1-methylpentyl group, a 2-methylpentyl group, a 3-methylpentyl group or a 4-methylpentyl group.


When the chain-like alkyl group is a fluorinated alkyl group containing a fluorine atom or a fluorinated alkyl group as a substituent, the fluorinated alkyl group preferably has 1 to 11 carbon atoms, more preferably 1 to 8, and still more preferably 1 to 4. The fluorinated alkyl group may contain an atom other than fluorine. Examples of the atom other than fluorine include an oxygen atom, a carbon atom, a hydrogen atom, a sulfur atom and a nitrogen atom.


As for Rd1, a fluorinated alkyl group in which part or all of the hydrogen atoms constituting a linear alkyl group have been substituted with fluorine atom(s) is preferable, and a fluorinated alkyl group in which all of the hydrogen atoms constituting a linear alkyl group have been substituted with fluorine atoms (i.e., a linear perfluoroalkyl group) is more preferable.


Specific examples of preferable anion moieties for the component (d1-1) are shown below.




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Cation Moiety


In formula (d1-1), Mm+ represents an organic cation having a valency of m.


The organic cation for Mm+ is not particularly limited, and examples thereof include the same cation moieties as those represented by the aforementioned formulae (ca-1) to (ca-4), and cation moieties represented by the aforementioned formulae (ca-1-1) to (ca-1-63) are preferable.


As the component (d1-1), one type of compound may be used, or two or more types of compounds may be used in combination.


{Component (d1-2)}


Anion Moiety


In formula (d1-2), Rd2 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, and is the same groups as those defined above for R101, provided that, the carbon atom within Rd2 group adjacent to the sulfur atom has no fluorine atom bonded thereto (i.e., the carbon atom within Rd2 group adjacent to the sulfur atom is not substituted with a fluorine atom). As a result, the anion of the component (d1-2) becomes an appropriately weak acid anion, thereby improving the quenching ability of the component (D).


As Rd2, an aliphatic cyclic group which may have a substituent is preferable, and a group in which one or more hydrogen atoms have been removed from adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane (which may have a substituent); or a group in which one or more hydrogen atoms have been removed from camphor is more preferable.


The hydrocarbon group for Rd2 may have a substituent. As the substituent, the same groups as those described above for substituting the hydrocarbon group (e.g., aromatic hydrocarbon group, aliphatic hydrocarbon group) for Rd1 in the formula (d1-1) can be mentioned.


Specific examples of preferable anion moieties for the component (d1-2) are shown below.




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Cation Moiety


In formula (d1-2), Mm+ is an organic cation having a valency of m, and is the same as defined for Mm+ in the aforementioned formula (d1-1).


As the component (d1-2), one type of compound may be used, or two or more types of compounds may be used in combination.


{Component (d1-3)}


Anion Moiety


In formula (d1-3), Rd3 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, and is the same groups as those defined above for R101, and a cyclic group containing a fluorine atom, a chain-like alkyl group or a chain-like alkenyl group is preferable. Among these, a fluorinated alkyl group is preferable, and more preferably the same fluorinated alkyl groups as those described above for Rd1.


In formula (d1-3), Rd4 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, and is the same groups as those defined above for R101.


Among these, an alkyl group which may have substituent, an alkoxy group which may have substituent, an alkenyl group which may have substituent or a cyclic group which may have substituent is preferable.


The alkyl group for Rd4 is preferably a linear or branched alkyl group of 1 to 5 carbon atoms, and specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, and a neopentyl group. Part of the hydrogen atoms within the alkyl group for Rd4 may be substituted with a hydroxy group, a cyano group or the like.


The alkoxy group for Rd4 is preferably an alkoxy group of 1 to 5 carbon atoms, and specific examples thereof include a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group and a tert-butoxy group. Among these, a methoxy group and an ethoxy group are desirable.


As the alkenyl group for Rd4, the same groups as those described above for R101 can be mentioned, and a vinyl group, a propenyl group (an allyl group), a 1-methylpropenyl group and a 2-methylpropenyl group are preferable. These groups may have an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms as a substituent.


As the cyclic group for Rd4, the same groups as those described above for R101 can be mentioned. Among these, as the cyclic group, an alicyclic group (e.g., a group in which one or more hydrogen atoms have been removed from a cycloalkane such as cyclopentane, cyclohexane, adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane) or an aromatic group (e.g., a phenyl group or a naphthyl group) is preferable. When Rd4 is an alicyclic group, the resist composition can be satisfactorily dissolved in an organic solvent, thereby improving the lithography properties. Alternatively, when Rd4 is an aromatic group, the resist composition exhibits an excellent photoadsorption efficiency in a lithography process using EUV or the like as the exposure source, thereby resulting in the improvement of the sensitivity and the lithography properties.


In formula (d1-3), Yd1 represents a single bond or a divalent linking group. The divalent linking group for Yd1 is not particularly limited, and examples thereof include a divalent hydrocarbon group (aliphatic hydrocarbon group, or aromatic hydrocarbon group) which may have a substituent and a divalent linking group containing a hetero atom. As such groups, the same divalent linking groups as those described above for Ya21 in the formula (a2-1) can be mentioned.


As Yd1, a carbonyl group, an ester bond, an amide bond, an alkylene group or a combination of these groups is preferable. As the alkylene group, a linear or branched alkylene group is more preferable, and a methylene group or an ethylene group is still more preferable.


Specific examples of preferable anion moieties for the component (d1-3) are shown below.




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Cation Moiety


In formula (d1-3), Mm+ is an organic cation having a valency of m, and is the same as defined for Mm+ in the aforementioned formula (d1-1).


As the component (d1-3), one type of compound may be used, or two or more types of compounds may be used in combination.


As the component (D1), one type of the aforementioned components (d1-1) to (d1-3) can be used, or at least two types of the aforementioned components (d1-1) to (d1-3) can be used in combination.


The amount of the component (D1) relative to 100 parts by weight of the component (A) is preferably within a range from 0.5 to 10 parts by weight, more preferably from 0.5 to 8 parts by weight, and still more preferably from 1 to 8 parts by weight.


When the amount of the component (D1) is at least as large as the lower limit of the above-mentioned range, excellent lithography properties and excellent resist pattern shape can be obtained. On the other hand, when the amount of the component (D1) is no more than the upper limit of the above-mentioned range, sensitivity can be maintained at a satisfactory level, and through-put becomes excellent.


The production methods of the components (d1-1) and (d1-2) are not particularly limited, and the components (d1-1) and (d1-2) can be produced by conventional methods.


The amount of the component (D1) relative to 100 parts by weight of the component (A) is preferably within a range from 0.5 to 10.0 parts by weight, more preferably from 0.5 to 8.0 parts by weight, and still more preferably from 1.0 to 8.0 parts by weight. When the amount is at least as large as the lower limit of the above-mentioned range, excellent lithography properties and excellent resist pattern shape can be obtained. On the other hand, when the amount is no more than the upper limit of the above-mentioned range, sensitivity can be maintained at a satisfactory level, and through-put becomes excellent.


(Component (D2))


The component (D) may contain a nitrogen-containing organic compound (D2) (hereafter, referred to as component (D2)) which does not fall under the definition of component (D1).


The component (D2) is not particularly limited, as long as it functions as an acid diffusion control agent, and does not fall under the definition of the component (D1). As the component (D2), any of the conventionally known compounds may be selected for use. Among these, an aliphatic amine, particularly a secondary aliphatic amine or tertiary aliphatic amine is preferable.


An aliphatic amine is an amine having one or more aliphatic groups, and the aliphatic groups preferably have 1 to 12 carbon atoms.


Examples of these aliphatic amines include amines in which at least one hydrogen atom of ammonia (NH3) has been substituted with an alkyl group or hydroxyalkyl group of no more than 12 carbon atoms (i.e., alkylamines or alkylalcoholamines), and cyclic amines.


Specific examples of alkylamines and alkylalcoholamines include monoalkyl amines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, and n-decylamine; dialkylamines such as diethylamine, di-n-propylamine, di-n-heptylamine, di-n-octylamine, and dicyclohexylamine; trialkylamines such as trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decylamine, and tri-n-dodecylamine; and alkyl alcohol amines such as diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di-n-octanolamine, and tri-n-octanolamine. Among these, trialkylamines of 5 to 10 carbon atoms are preferable, and tri-n-pentylamine and tri-n-octylamine are particularly desirable.


Examples of the cyclic amine include heterocyclic compounds containing a nitrogen atom as a hetero atom. The heterocyclic compound may be a monocyclic compound (aliphatic monocyclic amine), or a polycyclic compound (aliphatic polycyclic amine).


Specific examples of the aliphatic monocyclic amine include piperidine, and piperazine.


The aliphatic polycyclic amine preferably has 6 to 10 carbon atoms, and specific examples thereof include 1,5-diazabicyclo[4.3.0]-5-nonene, 1,8-diazabicyclo[5.4.0]-7-undecene, hexamethylenetetramine, and 1,4-diazabicyclo[2.2.2]octane.


Examples of other aliphatic amines include tris(2-methoxymethoxyethyl)amine, tris{2-(2-methoxyethoxy)ethyl}amine, tris{2-(2-methoxyethoxymethoxy)ethyl}amine, tris{2-(1-methoxyethoxy)ethyl}amine, tris{2-(1-ethoxyethoxy)ethyl}amine, tris{2-(1-ethoxypropoxy)ethyl}amine, tris[2-{2-(2-hydroxyethoxy)ethoxy}ethyl]amine and triethanol amine tri acetate, and triethanolamine triacetate is preferable.


Further, as the component (D2), an aromatic amine may be used.


Examples of aromatic amines include aniline, pyridine, 4-dimethylaminopyridine, pyrrole, indole, pyrazole, imidazole and derivatives thereof, as well as diphenylamine, triphenylamine, tribenzylamine, 2,6-diisopropylaniline and N-tert-butoxycarbonylpyrrolidine.


As the component (D2), one type of compound may be used alone, or two or more types may be used in combination.


The component (D2) is typically used in an amount within a range from 0.01 to 5.0 parts by weight, relative to 100 parts by weight of the component (A). When the amount of the component (D2) is within the above-mentioned range, the shape of the resist pattern and the post exposure stability of the latent image formed by the pattern-wise exposure of the resist layer are improved.


As the component (D), one type of compound may be used, or two or more types of compounds may be used in combination.


When the resist composition of the present invention contains the component (D), the amount of the component (D) relative to 100 parts by weight of the component (A) is preferably within a range from 0.1 to 15 parts by weight, more preferably from 0.3 to 12 parts by weight, and still more preferably from 0.5 to 12 parts by weight. When the amount of the component (D) is at least as large as the lower limit of the above-mentioned range, various lithography properties (such as LWR) of the resist composition are improved. Further, a resist pattern having an excellent shape can be obtained. On the other hand, when the amount is no more than the upper limit of the above-mentioned range, sensitivity can be maintained at a satisfactory level, and through-put becomes excellent.


<Optional Components>


[Component (E)]


Furthermore, in the resist composition of the present invention, for preventing any deterioration in sensitivity, and improving the resist pattern shape and the post exposure stability of the latent image formed by the pattern-wise exposure of the resist layer, at least one compound (E) (hereafter referred to as the component (E)) selected from the group consisting of an organic carboxylic acid, or a phosphorus oxo acid or derivative thereof can be added.


Examples of suitable organic carboxylic acids include acetic acid, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, and salicylic acid.


Examples of phosphorus oxo acids include phosphoric acid, phosphonic acid and phosphinic acid. Among these, phosphonic acid is particularly desirable.


Examples of phosphorous oxo acid derivatives include esters in which a hydrogen atom within the above-mentioned phosphorous oxo acids is substituted with a hydrocarbon group. Examples of the hydrocarbon group include an alkyl group of 1 to 5 carbon atoms and an aryl group of 6 to 15 carbon atoms.


Examples of phosphoric acid derivatives include phosphoric acid esters such as di-n-butyl phosphate and diphenyl phosphate.


Examples of phosphonic acid derivatives include phosphonic acid esters such as dimethyl phosphonate, di-n-butyl phosphonate, phenylphosphonic acid, diphenyl phosphonate and dibenzyl phosphonate.


Examples of phosphinic acid derivatives include phenylphosphinic acid and phosphinic acid esters.


As the component (E), one type may be used alone, or two or more types may be used in combination.


The component (E) is typically used in an amount within a range from 0.01 to 5.0 parts by weight, relative to 100 parts by weight of the component (A).


[Component (F)]


In the present invention, the resist composition may further include a fluorine additive (hereafter, referred to as “component (F)”) for imparting water repellency to the resist film.


As the component (F), for example, a fluorine-containing polymeric compound described in Japanese Unexamined Patent Application, First Publication No. 2010-002870, Japanese Unexamined Patent Application, First Publication No. 2010-032994, Japanese Unexamined Patent Application, First Publication No. 2010-277043, Japanese Unexamined Patent Application, First Publication No. 2011-13569, and Japanese Unexamined Patent Application, First Publication No. 2011-128226 can be used.


Specific examples of the component (F) include polymers having a structural unit (f1) represented by general formula (f1-1) shown below. As the polymer, a polymer (homopolymer) consisting of a structural unit (f1) represented by formula (f1-1) shown below; a copolymer of a structural unit (f1) represented by formula (f1-1) shown below and the aforementioned structural unit (a1); and a copolymer of a structural unit (f1) represented by the formula (f1-1) shown below, a structural unit derived from acrylic acid or methacrylic acid and the aforementioned structural unit (a1) are preferable. As the structural unit (a1) to be copolymerized with a structural unit (f1) represented by formula (f1-1) shown below, a structural unit derived from 1-ethyl-1-cyclooctyl(meth)acrylate or a structural unit represented by the aforementioned formula (a1-2-01) is preferable.




embedded image


In the formula, R is the same as defined above; Rf102 and Rf103 each independently represents a hydrogen atom, a halogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms, provided that Rf102 and Rf103 may be the same or different; nf1 represents an integer of 1 to 5; and Rf101 represents an organic group containing a fluorine atom.


In formula (f1-1), R is the same as defined above. As R, a hydrogen atom or a methyl group is preferable.


In formula (f1-1), examples of the halogen atom for Rf102 and Rf103 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly desirable. Examples of the alkyl group of 1 to 5 carbon atoms for Rf102 and Rf103 include the same alkyl group of 1 to 5 carbon atoms as those described above for R, and a methyl group or an ethyl group is preferable. Specific examples of the halogenated alkyl group of 1 to 5 carbon atoms represented by Rf102 and Rf103 include groups in which part or all of the hydrogen atoms of the aforementioned alkyl groups of 1 to 5 carbon atoms have been substituted with halogen atoms. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly desirable. Among these, as Rf102 and Rf103, a hydrogen atom, a fluorine atom or an alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom, a fluorine atom, a methyl group or an ethyl group is more preferable.


In formula (f1-1), nf1 represents an integer of 1 to 5, preferably an integer of 1 to 3, and more preferably 1 or 2.


In formula (f1-1), Rf101 represents an organic group containing a fluorine atom, and is preferably a hydrocarbon group containing a fluorine atom.


The hydrocarbon group containing a fluorine atom may be linear, branched or cyclic, and preferably has 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, and most preferably 1 to 10 carbon atoms.


It is preferable that the hydrocarbon group having a fluorine atom has 25% or more of the hydrogen atoms within the hydrocarbon group fluorinated, more preferably 50% or more, and most preferably 60% or more, as the hydrophobicity of the resist film during immersion exposure is enhanced.


Among these, as Rf101, a fluorinated hydrocarbon group of 1 to 5 carbon atoms is preferable, and a trifluoromethyl group, —CH2—CF3, —CH2—CF2—CF3, —CH(CF3)2, —CH2—CH2—CF3 and —CH2—CH2—CF2—CF2—CF2—CF3 are most preferable.


The weight average molecular weight (Mw) (the polystyrene equivalent value determined by gel permeation chromatography) of the component (F) is preferably 1,000 to 50,000, more preferably 5,000 to 40,000, and most preferably 10,000 to 30,000. When the weight average molecular weight is no more than the upper limit of the above-mentioned range, the resist composition exhibits a satisfactory solubility in a resist solvent. On the other hand, when the weight average molecular weight is at least as large as the lower limit of the above-mentioned range, dry etching resistance and the cross-sectional shape of the resist pattern becomes satisfactory.


Further, the dispersity (Mw/Mn) of the component (F) is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, and most preferably 1.2 to 2.5.


As the component (F), one type may be used alone, or two or more types may be used in combination.


The component (F) is typically used in an amount within a range from 0.5 to 10 parts by weight, relative to 100 parts by weight of the component (A).


If desired, other miscible additives can also be added to the resist composition of the present invention. Examples of such miscible additives include additive resins for improving the performance of the resist film, dissolution inhibitors, plasticizers, stabilizers, colorants, halation prevention agents, and dyes.


[Component (S)]


The resist composition of the present invention can be prepared by dissolving the materials for the resist composition in an organic solvent (hereafter, frequently referred to as “component (S)”).


The component (S) may be any organic solvent which can dissolve the respective components to give a uniform solution, and one or more kinds of any organic solvent can be appropriately selected from those which have been conventionally known as solvents for a chemically amplified resist.


Examples thereof include lactones such as γ-butyrolactone; ketones such as acetone, methyl ethyl ketone (MEK), cyclohexanone, methyl-n-pentyl ketone (2-heptanone), and methyl isopentyl ketone; polyhydric alcohols, such as ethylene glycol, diethylene glycol, propylene glycol and dipropylene glycol; compounds having an ester bond, such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate; polyhydric alcohol derivatives including compounds having an ether bond, such as a monoalkylether (e.g., monomethylether, monoethylether, monopropylether or monobutylether) or monophenylether of any of these polyhydric alcohols or compounds having an ester bond (among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferable); cyclic ethers such as dioxane; esters such as methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate; aromatic organic solvents such as anisole, ethylbenzylether, cresylmethylether, diphenylether, dibenzylether, phenetole, butylphenylether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene and mesitylene; and dimethylsulfoxide (DMSO).


These solvents can be used individually, or in combination as a mixed solvent.


Among these, PGMEA, PGME, γ-butyrolactone and EL are preferable.


Further, among the mixed solvents, a mixed solvent obtained by mixing PGMEA with a polar solvent is preferable. The mixing ratio (weight ratio) of the mixed solvent can be appropriately determined, taking into consideration the compatibility of the PGMEA with the polar solvent, but is preferably in the range of 1:9 to 9:1, more preferably from 2:8 to 8:2.


Specifically, when EL or cyclohexanone is mixed as the polar solvent, the PGMEA:EL weight ratio or PGMEA:cyclohexanone weight ratio is preferably from 1:9 to 9:1, and more preferably from 2:8 to 8:2. Alternatively, when PGME is mixed as the polar solvent, the PGMEA:PGME is preferably from 1:9 to 9:1, more preferably from 2:8 to 8:2, and still more preferably 3:7 to 7:3.


Further, as the component (S), a mixed solvent of at least one of PGMEA and EL with γ-butyrolactone is also preferable. The mixing ratio (former:latter) of such a mixed solvent is preferably from 70:30 to 95:5.


The amount of the component (S) is not particularly limited, and is appropriately adjusted to a concentration which enables coating of a resist solution to a substrate. In general, the organic solvent is used in an amount such that the solid content of the resist composition becomes within the range from 1 to 20% by weight, and preferably from 2 to 15% by weight.


The resist compositions of the present invention exhibited excellent lithography properties such as sensitivity and LWR. The reason for this has not been elucidated yet, but is presumed as follows.


The structural unit (a0) in the polymeric compound (A1) contained in the resist composition of the present invention increases the compatibility with a developing solution, and therefore, improvement in sensitivity and LWR can be expected.


The acid generator component contained in the resist composition of the present invention has an anion group which has a relatively bulky functional group, and therefore, the diffusion length of the acid generator is shortened. By using the polymeric compound containing the structural unit (a0) and the acid generated are used in combination (that is, by using the polymeric compound exhibiting excellent sensitivity and the acid generator having a short diffusion length in combination), sensitivity can be appropriately controlled, and lithography properties such as sensitivity and LWR can be improved.


The structural unit (a0) in the polymeric compound contained in the resist composition of the present invention has a hydrophilic group, and hence, it is presumed that the interaction with acid can be improved.


<<Method of Forming a Resist Pattern>>


The method of forming a resist pattern of the second aspect of the present invention includes: forming a resist film on a substrate using a resist composition of the present invention; conducting exposure of the resist film; and developing the resist film to form a resist pattern.


The method for forming a resist pattern according to the present invention can be performed, for example, as follows.


Firstly, a resist composition of the present invention is applied to a substrate using a spinner or the like, and a bake treatment (post applied bake (PAB)) is conducted at a temperature of 80 to 150° C. for 40 to 120 seconds, preferably 60 to 90 seconds, to form a resist film.


Following selective exposure of the thus formed resist film, either by exposure through a mask having a predetermined pattern formed thereon (mask pattern) using an exposure apparatus such as an ArF exposure apparatus, an electron beam lithography apparatus or an EUV exposure apparatus, or by patterning via direct irradiation with an electron beam without using a mask pattern, baking treatment (post exposure baking (PEB)) is conducted under temperature conditions of 80 to 150° C. for 40 to 120 seconds, and preferably 60 to 90 seconds.


Next, the resist film is subjected to a developing treatment.


The developing treatment is conducted using an alkali developing solution in the case of an alkali developing process, and a developing solution containing an organic solvent (organic developing solution) in the case of a solvent developing process.


After the developing treatment, it is preferable to conduct a rinse treatment. The rinse treatment is preferably conducted using pure water in the case of an alkali developing process, and a rinse solution containing an organic solvent in the case of a solvent developing process.


In the case of a solvent developing process, after the developing treatment or the rinsing, the developing solution or the rinse liquid remaining on the pattern can be removed by a treatment using a supercritical fluid.


After the developing treatment or the rinse treatment, drying is conducted. If desired, bake treatment (post bake) can be conducted following the developing. In this manner, a resist pattern can be obtained.


The substrate is not specifically limited and a conventionally known substrate can be used. For example, substrates for electronic components, and such substrates having wiring patterns formed thereon can be used. Specific examples of the material of the substrate include metals such as silicon wafer, copper, chromium, iron and aluminum; and glass. Suitable materials for the wiring pattern include copper, aluminum, nickel, and gold.


Further, as the substrate, any one of the above-mentioned substrates provided with an inorganic and/or organic film on the surface thereof may be used. As the inorganic film, an inorganic anti-reflection film (inorganic BARC) can be used. As the organic film, an organic antireflection film (organic BARC) and an organic film such as a lower-layer organic film used in a multilayer resist method can be used.


Here, a “multilayer resist method” is method in which at least one layer of an organic film (lower-layer organic film) and at least one layer of a resist film (upper resist film) are provided on a substrate, and a resist pattern formed on the upper resist film is used as a mask to conduct patterning of the lower-layer organic film. This method is considered as being capable of forming a pattern with a high aspect ratio. More specifically, in the multilayer resist method, a desired thickness can be ensured by the lower-layer organic film, and as a result, the thickness of the resist film can be reduced, and an extremely fine pattern with a high aspect ratio can be formed.


The multilayer resist method is broadly classified into a method in which a double-layer structure consisting of an upper-layer resist film and a lower-layer organic film is formed (double-layer resist method), and a method in which a multilayer structure having at least three layers consisting of an upper-layer resist film, a lower-layer organic film and at least one intermediate layer (thin metal film or the like) provided between the upper-layer resist film and the lower-layer organic film is formed (triple-layer resist method).


The wavelength to be used for exposure is not particularly limited and the exposure can be conducted using radiations such as ArF excimer laser, KrF excimer laser, F2 excimer laser, extreme ultraviolet rays (EUV), vacuum ultraviolet rays (VUV), electron beam (EB), X-rays, and soft X-rays. The resist composition of the present invention is effective to KrF excimer laser, ArF excimer laser, EB and EUV.


The exposure of the resist film can be either a general exposure (dry exposure) conducted in air or an inert gas such as nitrogen, or immersion exposure (immersion lithography).


In immersion lithography, the region between the resist film and the lens at the lowermost point of the exposure apparatus is pre-filled with a solvent (immersion medium) that has a larger refractive index than the refractive index of air, and the exposure (immersion exposure) is conducted in this state.


The immersion medium preferably exhibits a refractive index larger than the refractive index of air but smaller than the refractive index of the resist film to be exposed. The refractive index of the immersion medium is not particularly limited as long as it satisfies the above-mentioned requirements.


Examples of this immersion medium which exhibits a refractive index that is larger than the refractive index of air but smaller than the refractive index of the resist film include water, fluorine-based inert liquids, silicon-based solvents and hydrocarbon-based solvents.


Specific examples of the fluorine-based inert liquids include liquids containing a fluorine-based compound such as C3HCl2F5, C4F9OCH3, C4F9OC2H5 or C5H3F7 as the main component, which preferably have a boiling point within a range from 70 to 180° C. and more preferably from 80 to 160° C. A fluorine-based inert liquid having a boiling point within the above-mentioned range is advantageous in that the removal of the immersion medium after the exposure can be conducted by a simple method.


As a fluorine-based inert liquid, a perfluoroalkyl compound in which all of the hydrogen atoms of the alkyl group are substituted with fluorine atoms is particularly desirable. Examples of these perfluoroalkyl compounds include perfluoroalkylether compounds and perfluoroalkylamine compounds.


Specifically, one example of a suitable perfluoroalkylether compound is perfluoro(2-butyl-tetrahydrofuran) (boiling point 102° C.), and an example of a suitable perfluoroalkylamine compound is perfluorotributylamine (boiling point 174° C.).


As the immersion medium, water is preferable in terms of cost, safety, environment and versatility.


As an example of the alkali developing solution used in an alkali developing process, a 0.1 to 10% by weight aqueous solution of tetramethylammonium hydroxide (TMAH) can be given.


As the organic solvent contained in the organic developing solution used in a solvent developing process, any of the conventional organic solvents can be used which are capable of dissolving the component (A) (prior to exposure). Specific examples of the organic solvent include polar solvents such as ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents, and hydrocarbon solvents.


If desired, the organic developing solution may have a conventional additive blended. Examples of the additive include surfactants. The surfactant is not particularly limited, and for example, an ionic or non-ionic fluorine and/or silicon surfactant can be used.


When a surfactant is added, the amount thereof based on the total amount of the organic developing solution is generally 0.001 to 5% by weight, preferably 0.005 to 2% by weight, and more preferably 0.01 to 0.5% by weight.


The developing treatment can be performed by a conventional developing method. Examples thereof include a method in which the substrate is immersed in the developing solution for a predetermined time (a dip method), a method in which the developing solution is cast up on the surface of the substrate by surface tension and maintained for a predetermined period (a puddle method), a method in which the developing solution is sprayed onto the surface of the substrate (spray method), and a method in which the developing solution is continuously ejected from a developing solution ejecting nozzle while scanning at a constant rate to apply the developing solution to the substrate while rotating the substrate at a constant rate (dynamic dispense method).


The rinse treatment using a rinse liquid (washing treatment) can be conducted by a conventional rinse method. Examples of the rinse method include a method in which the rinse liquid is continuously applied to the substrate while rotating it at a constant rate (rotational coating method), a method in which the substrate is immersed in the rinse liquid for a predetermined time (dip method), and a method in which the rinse liquid is sprayed onto the surface of the substrate (spray method).







EXAMPLES

As follows is a description of examples of the present invention, although the scope of the present invention is by no way limited by these examples.


<<Preparation of Resist Composition 1>>


The components were mixed in the mixing ratio indicated in following Tables 1 to 6 to obtain resist compositions (Examples 1 to 42, Comparative Examples 1 to 14).

















TABLE 1







Component
Component
Component
Component
Component
Component
Component



(A)
(B)
(D)
(F)
(E)
(S)-1
(S)-2























Comparative
(A)-1
(B)-1
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 1
[100]
[13.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-1
(B)-2
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 2
[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-1
(B)-3
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 3
[100]
[15.1]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-1
(B)-4
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 4
[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-1
(B)-5
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 5
[100]
[15.2]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-1
(B)-6
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 6
[100]
[14.8]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-1
(B)-7
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 7
[100]
[14.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-1
(B)-8
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 8
[100]
[19.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-2
(B)-1
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 9
[100]
[13.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-3
(B)-1
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 10
[100]
[13.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-4
(B)-1
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 11
[100]
[13.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-5
(B)-1
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 12
[100]
[13.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-6
(B)-1
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 13
[100]
[13.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-7
(B)-1
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2


Example 14
[100]
[13.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]
























TABLE 2







Component
Component
Component
Component
Component
Component
Component



(A)
(B)
(D)
(F)
(E)
(S)-1
(S)-2























Example 1
(A)-2
(B)-2
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 2
(A)-2
(B)-3
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.1]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 3
(A)-2
(B)-4
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 4
(A)-2
(B)-5
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.2]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 5
(A)-2
(B)-6
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.8]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 6
(A)-2
(B)-7
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 7
(A)-2
(B)-8
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[19.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]
























TABLE 3







Component
Component
Component
Component
Component
Component
Component



(A)
(B)
(D)
(F)
(E)
(S)-1
(S)-2























Example 8
(A)-3
(B)-2
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 9
(A)-3
(B)-3
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.1]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 10
(A)-3
(B)-4
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 11
(A)-3
(B)-5
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.2]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 12
(A)-3
(B)-6
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.8]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 13
(A)-3
(B)-7
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 14
(A)-3
(B)-8
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[19.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]
























TABLE 4







Component
Component
Component
Component
Component
Component
Component



(A)
(B)
(D)
(F)
(E)
(S)-1
(S)-2























Example 15
(A)-4
(B)-2
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 16
(A)-4
(B)-3
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.1]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 17
(A)-4
(B)-4
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 18
(A)-4
(B)-5
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.2]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 19
(A)-4
(B)-6
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.8]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 20
(A)-4
(B)-7
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 21
(A)-4
(B)-8
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[19.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]
























TABLE 5







Component
Component
Component
Component
Component
Component
Component



(A)
(B)
(D)
(F)
(E)
(S)-1
(S)-2























Example 22
(A)-5
(B)-2
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 23
(A)-5
(B)-3
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.1]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 24
(A)-5
(B)-4
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 25
(A)-5
(B)-5
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.2]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 26
(A)-5
(B)-6
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.8]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 27
(A)-5
(B)-7
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 28
(A)-5
(B)-8
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[19.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]
























TABLE 6







Component
Component
Component
Component
Component
Component
Component



(A)
(B)
(D)
(F)
(E)
(S)-1
(S)-2























Example 29
(A)-6
(B)-2
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 30
(A)-6
(B)-3
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.1]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 31
(A)-6
(B)-4
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 32
(A)-6
(B)-5
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.2]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 33
(A)-6
(B)-6
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.8]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 34
(A)-6
(B)-7
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 35
(A)-6
(B)-8
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[19.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 36
(A)-7
(B)-2
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 37
(A)-7
(B)-3
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.1]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 38
(A)-7
(B)-4
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.5]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 39
(A)-7
(B)-5
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[15.2]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 40
(A)-7
(B)-6
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.8]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 41
(A)-7
(B)-7
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[14.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]


Example 42
(A)-7
(B)-8
(D)-1
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[19.9]
[5.15]
[4.0]
[0.2]
[100]
[4000]











    • (A)-1 to (A)-7: polymeric compounds (A)-1 to (A)-7 shown below

    • (B)-1 to (B)-8: compounds (B)-1 to (B)-8 shown below

    • (D)-1: compound (D)-1 shown below

    • (F)-1: polymeric compound (F)-1 shown below (molar ratio: 1/m=77/23), Mw: 23,100, Mw/Mn: 1.78

    • (E)-1: salicylic acid

    • (S)-1: γ-butyrolactone

    • (S)-2: a mixed solvent of PGMEA/PGME/cyclohexanone=45/30/25 (weight ratio)







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Formation of Resist Pattern
Examples 1 to 42, Comparative Examples 1 to 14

An organic anti-reflection film composition (product name: ARC95, manufactured by Brewer Science Ltd.) was applied to an 12-inch silicon wafer using a spinner, and the composition was then baked at 205° C. for 60 seconds on a hotplate and dried, thereby forming an organic anti-reflection film having a film thickness of 90 nm.


Then, each of the above resist composition indicated in Table 1 (Examples 1 to 42, Comparative Examples 1 to 14) was applied to the organic antireflection film using a spinner, and was then prebaked (PAB) on a hotplate at 110° C. for 60 seconds and dried, thereby forming a resist film having a film thickness of 90 nm.


Subsequently, the resist film was selectively irradiated with an ArF excimer laser (193 nm) through a mask, using an immersion lithography ArF exposure apparatus NSR-S609B (manufactured by Nikon Corporation; NA (numerical aperture)=1.07; Dipole (in/out=0.78/0.97) with Polano; immersion medium: water).


Further, PEB treatment was conducted at 95° C. for 60 seconds.


Next, an alkali development was conducted for 10 seconds at 23° C. in a 2.38% by weight aqueous solution of tetramethylammonium hydroxide (TMAH) (product name: NMD-3; manufactured by Tokyo Ohka Kogyo Co., Ltd.). Then, the resist was washed for 30 seconds with pure water, followed by drying by shaking. After development, a post bake was conducted at 100° C. for 45 seconds.


As a result, in each of the examples, a 1:1 line and space pattern (LS pattern) having a line width of 50 nm and a pitch of 100 nm was formed.


[Evaluation of Optimum Exposure Dose (Eop)]


In the above “formation of resist pattern”, the optimum exposure dose Eop (μC/cm2) with which the LS pattern having the target size could be formed was determined. The results are indicated under “Eop” in Tables 7 to 12.


[Evaluation of Mask Error Factor (MEEF)]


In the same manner as in the formation of LS pattern, with the same exposure dose, LS patterns with a pitch of 98 nm were formed using a mask pattern targeting a line pattern size of 45 to 54 nm (10 target sizes at intervals of 1 nm). The value of the mask error factor (MEEF) was determined as the gradient of a graph obtained by plotting the target size (nm) on the horizontal axis, and the size (nm) of the formed line patterns on the vertical axis. A MEEF value (gradient of the plotted line) closer to 1 indicates that a resist pattern faithful to the mask pattern was formed.


The results are shown in Tables 7 to 12.


[Evaluation of Line Width Roughness (LWR)]


With respect to each of the LS patterns, the space width at 400 points in the lengthwise direction of the space was measured using a measuring scanning electron microscope (SEM) (product name: S-9380, manufactured by Hitachi High-Technologies Corporation; acceleration voltage: 300V). From the results, the value of 3 times the standard deviation s (i.e., 3 s) was determined, and the average of the 3 s values at 400 points was calculated as a yardstick of LWR. The results are shown in Tables 7 to 12.


The smaller this 3 s value is, the lower the level of roughness of the line width, indicating that a LS pattern with a uniform width was obtained.













TABLE 7








LWR




Eop
(nm)
MEEF





















Comparative
22.3
4.46
2.12



Example 1



Comparative
25.3
2.72
1.51



Example 2



Comparative
28.0
2.69
1.32



Example 3



Comparative
23.8
2.68
1.49



Example 4



Comparative
24.1
2.56
1.45



Example 5



Comparative
25.3
2.54
1.49



Example 6



Comparative
25.6
2.51
1.45



Example 7



Comparative
33.0
2.68
1.45



Example 8



Comparative
18.1
4.41
2.14



Example 9



Comparative
20.3
4.12
2.12



Example 10



Comparative
29.0
4.12
2.12



Example 11



Comparative
29.0
4.19
2.15



Example 12



Comparative
20.3
3.98
2.34



Example 13



Comparative
19.0
4.00
2.35



Example 14





















TABLE 8








LWR




Eop
(nm)
MEEF





















Example 1
20.5
2.69
1.52



Example 2
22.7
2.52
1.29



Example 3
19.1
2.61
1.41



Example 4
19.6
2.49
1.42



Example 5
20.5
2.38
1.39



Example 6
20.5
2.32
1.38



Example 7
26.8
2.42
1.41





















TABLE 9








LWR




Eop
(nm)
MEEF





















Example 8
23.5
2.71
1.51



Example 9
25.8
2.59
1.95



Example 10
22.4
2.65
1.35



Example 11
22.7
2.56
1.38



Example 12
23.0
2.47
1.31



Example 13
23.6
2.39
1.35



Example 14
30.7
2.42
1.49





















TABLE 10








LWR




Eop
(nm)
MEEF





















Example 15
32.9
2.68
1.51



Example 16
36.4
2.42
1.99



Example 17
30.9
2.32
1.35



Example 18
31.3
2.23
1.38



Example 19
32.9
2.31
1.31



Example 20
33.3
2.45
1.35



Example 21
4.29
2.34
1.21





















TABLE 11








LWR




Eop
(nm)
MEEF





















Example 22
32.9
2.68
1.49



Example 23
36.4
2.42
2.01



Example 24
30.9
2.32
1.34



Example 25
31.3
2.23
1.23



Example 26
32.9
2.31
1.32



Example 27
33.3
2.48
1.42



Example 28
42.9
2.34
1.29





















TABLE 12








LWR




Eop
(nm)
MEEF





















Example 29
23.3
2.72
1.59



Example 30
25.8
2.57
1.98



Example 31
22.6
2.59
1.41



Example 32
21.9
2.43
1.32



Example 33
23.3
2.48
1.43



Example 34
23.0
2.43
1.45



Example 35
28.7
2.29
1.34



Example 36
21.2
2.7
1.55



Example 37
23.4
2.55
1.80



Example 38
20.5
2.6
1.45



Example 39
20.1
2.5
1.31



Example 40
22.1
2.5
1.43



Example 41
22.0
2.4
1.45



Example 42
25.0
2.3
1.32










From the results shown above, it was confirmed that, a comparison was made between Examples and Comparative Examples in which the same component (B) was used, Examples exhibited excellent LWR as compared to Comparative Examples.


It was confirmed that, when the ester bond for L11 in general formula (b1) was arranged to form V11—C(═O)O—Y11, MEEF exhibited an excellent value, and in particular, when a cyclic group for R11 had a substituent, LWR was especially good.


<<Preparation of Resist Composition 2>>


The components were mixed in the mixing ratio indicated in following Table 13 to obtain resist compositions (Examples 43 to 49, Comparative Example 16).

















TABLE 13







Component
Component
Component
Component
Component
Component
Component



(A)
(B)
(D)
(F)
(E)
(S)-1
(S)-2























Example 43
(A)-8
(B)-2
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[11.8]
[4.95]
[4.0]
[0.2]
[100]
[4000]


Example 44
(A)-8
(B)-3
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[12.3]
[4.95]
[4.0]
[0.2]
[100]
[4000]


Example 45
(A)-8
(B)-4
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[11.8]
[4.95]
[4.0]
[0.2]
[100]
[4000]


Example 46
(A)-8
(B)-5
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[12.4]
[4.95]
[4.0]
[0.2]
[100]
[4000]


Example 47
(A)-8
(B)-6
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[12.1]
[4.95]
[4.0]
[0.2]
[100]
[4000]


Example 48
(A)-8
(B)-7
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[12.1]
[4.95]
[4.0]
[0.2]
[100]
[4000]


Example 49
(A)-8
(B)-8
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2



[100]
[16.2]
[4.95]
[4.0]
[0.2]
[100]
[4000]


Comparative
(A)-8
(B)-1
(D)-2
(F)-1
(E)-1
(S)-1
(S)-2


Example 16
[100]
[11.3]
[4.95]
[4.0]
[0.2]
[100]
[4000]









In the table, the reference characters indicate the following. Further, the values in brackets [ ] indicate the amount (in terms of parts by weight) of the component added.

    • (A)-8: polymeric compound (A)-8 shown below
    • (B)-1 to (B)-8: the aforementioned compounds (B)-1 to (B)-8
    • (D)-2: compound (D)-2 shown below
    • (F)-1: the aforementioned polymeric compound (F)-1 (molar ratio: 1/m=77/23), Mw: 23,100, Mw/Mn: 1.78
    • (E)-1: salicylic acid
    • (S)-1: γ-butyrolactone
    • (S)-2: a mixed solvent of PGMEA/PGME/cyclohexanone=45/30/25 (weight ratio)




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Formation of Resist Pattern 2
Negative-Tone Solvent Developing
Examples 43 to 49
Comparative Example 16

An organic anti-reflection film composition (product name: ARC29, manufactured by Brewer Science Ltd.) was applied to an 12-inch silicon wafer using a spinner, and the composition was then baked at 205° C. for 60 seconds on a hotplate and dried, thereby forming an organic anti-reflection film having a film thickness of 82 nm.


Then, the above resist composition was applied to the organic antireflection film using a spinner, and was then prebaked (PAB) on a hotplate at 110° C. for 50 seconds and dried, thereby forming a resist film having a film thickness of 85 nm.


Subsequently, the resist film was selectively irradiated with an ArF excimer laser (193 nm) through a mask pattern, using an exposure apparatus NSR-5609B (manufactured by Nikon Corporation; NA (numerical aperture)=1.07; Dipole 0.97/0.78 with Polano). Further, a post exposure bake (PEB) treatment was conducted at 90° C. for 50 seconds.


Next, a solvent development was conducted for 31 seconds at 23° C. using butyl acetate, followed by drying by shaking.


As a result, in each of the examples, a line and space pattern was formed. In each of the examples, a line and space pattern having a space width of 47 nm and a pitch of 110 nm was formed.


With respect to the pattern formed in the aforementioned <Formation of resist pattern 2>, [Evaluation of optimum exposure dose (Eop)], [Evaluation of line width roughness (LWR)] and [Evaluation of mask error factor (MEEF)] were conducted in the same manner as described above.


Further, the following [Evaluation of exposure latitude (EL margin)] and [Measurement of pattern height] were also conducted. The results are shown in Table 14.


[Evaluation of Exposure Latitude (EL Margin)]


With respect to the exposure dose for formation of the LS pattern, the exposure dose with which the LS pattern having a dimension of the target dimension ±5% was formed was determined, and the EL margin (unit: %) was determined by the following formula.





EL margin (%)=(|E1−E2|/Eop)×100


E1: the exposure dose (mJ/cm2) for forming an LS pattern with a space width of 44.7 nm


E2: the exposure dose (mJ/cm2) for forming an LS pattern having a space width of 49.4 nm


The larger the exposure margin, the smaller the variation in the pattern size depending on the change in the exposure dose, thereby resulting in favorable improvement in the process margin.


[Measurement of Pattern Height]


The pattern height of the LS pattern formed in the aforementioned <Formation of resist pattern 2> was measured using a wafer shape/characteristic measurement apparatus (product name: SCD-XT, manufactured by KLA-TENCOR Corporation).















TABLE 14









Pattern






5% EL
Height
LWR



Eop
(%)
(nm)
(nm)
MEEF





















Example 43
20.8
7.42
69.5
3.21
3.32


Example 44
21.3
7.52
70.2
2.98
3.24


Example 45
20.1
7.32
73.2
2.57
2.81


Example 46
20.3
7.52
79.1
2.43
2.34


Example 47
17.2
7.89
81.2
2.39
2.24


Example 48
20.9
8.92
80.5
2.32
2.14


Example 49
21.5
9.32
82.5
2.29
2.09


Comparative
22.5
5.29
60.2
4.42
4.21


Example 16









From the results shown above, it was confirmed that, in the pattern formed by negative-tone solvent developing, Examples exhibited excellent Eop, EL margin, pattern height, LWR and MEEF, as compared to Comparative Example.


While preferred embodiments of the invention have been described and illustrated above, it should be understood that these are exemplary of the invention and are not to be considered as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the spirit or scope of the present invention. Accordingly, the invention is not to be considered as being limited by the foregoing description, and is only limited by the scope of the appended claims.

Claims
  • 1. A resist composition comprising a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the base component (A) comprising a polymeric compound (A1) comprising a structural unit (a0) represented by general formula (a0-1) shown below, andthe acid generator component (B) comprising a compound (B1) represented by general formula (b1) shown below:
  • 2. The resist composition according to claim 1, wherein the structural unit (a0) is at least one structural unit represented by any one of general formulae (a0-1-1) to (a0-1-3) shown below:
  • 3. The resist composition according to claim 2, wherein Ya1 represents an ester bond [—C(═O)—O-], an ether bond (—O—), a linear or branched alkylene group, a combination of these, or a single bond; Ra1 is a group selected from the group consisting of a lactone-containing cyclic group, an —SO2— containing cyclic group, a substituted aryl group, a polycyclic monovalent alicyclic hydrocarbon group which may have a substituent, a monovalent heterocycle, and a fluorinated alkyl group.
  • 4. The resist composition according to claim 2, wherein R11 is an adamantyl group which may have a substituent, a norbornyl group which may have a substituent or a cyclic group containing a steroid skeleton which may have a substituent, provided that, when R11 is an adamantly group or a norbornyl group, R11 has 2 or 3 alkyl groups, one hydroxyl group or one oxo group as a substituent; and when R11 is a polycycloalkane containing a condensed ring-type polycyclic skeleton, R11 has 3 to 5 substituents.
  • 5. The resist composition according to claim 4, wherein L11 is —C(═O)—O-configured to form —V11—C(═O)—O—Y11—.
  • 6. The resist composition according to claim 3, wherein R11 is an adamantyl group which may have a substituent, a norbornyl group which may have a substituent or a cyclic group containing a steroid skeleton which may have a substituent, provided that, when R11 is an adamantly group or a norbornyl group, R11 has 2 or 3 alkyl groups, one hydroxyl group or one oxo group as a substituent; and when RH is a polycycloalkane containing a condensed ring-type polycyclic skeleton, R11 has 3 to 5 substituents.
  • 7. The resist composition according to claim 6, wherein L11 is —C(═O)—O-configured to form —V11—C(═O)—O—Y11—.
  • 8. The resist composition according to claim 1, wherein the polymeric compound (A1) comprises a structural unit (a1) containing an acid decomposable group that exhibits increased polarity by the action of acid.
  • 9. The resist composition according to claim 1, wherein the polymeric compound (A1) comprises a structural unit (a2) containing a lactone-containing cyclic group.
  • 10. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 1; conducting exposure of the resist film; and developing the resist film to form a resist pattern.
  • 11. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 1; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 12. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 2; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 13. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 3; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 14. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 4; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 15. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 5; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 16. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 6; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 17. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 7; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 18. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 8; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
  • 19. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 9; conducting exposure of the resist film; and developing the resist film to form a negative resist pattern with a developing solution containing an organic solvent.
Priority Claims (2)
Number Date Country Kind
2013-094729 Apr 2013 JP national
2014-067153 Mar 2014 JP national