Information
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Patent Application
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20070231741
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Publication Number
20070231741
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Date Filed
April 02, 200717 years ago
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Date Published
October 04, 200717 years ago
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Inventors
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Original Assignees
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CPC
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US Classifications
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International Classifications
Abstract
A positive resist composition comprising a resin component having a solubility in an alkaline developer that increases under the action of an acid, a compound capable of generating an acid in response to actinic radiation, and an acidic organic compound having a molecular weight of at least 150 exhibits a high resolution and is effective in minimizing defects when processed by the photolithography. The composition is thus quite effective for precise micropatterning.
Claims
- 1. A positive resist composition comprising
(A) a resin component having a solubility in an alkaline developer that increases under the action of an acid,(B) a compound capable of generating an acid in response to actinic light or radiation, and(C) at least one acidic organic compound having a molecular weight of at least 150.
- 2. The positive resist composition of claim 1, wherein said acidic organic compound (C) has the general formula (1):
R1—X (1)
- 3. The positive resist composition of claim 1, wherein said acidic organic compound (C) has the general formula (2):
CH3(A)nCH2—X (2)
- 4. The positive resist composition of claim 1, wherein the resin component (A) comprises acidic recurring units.
- 5. A process for forming a pattern, comprising the steps of applying the positive resist composition of claim 1 onto a substrate to form a resist coating; heat treating the resist coating and exposing it to high-energy radiation or electron beam through a photomask; and heat treating the exposed coating and developing it with a developer;
the exposing step being effected by the immersion lithography wherein a high refractive index liquid having a refractive index of at least 1.0 intervenes between the resist coating and a projection lens.
- 6. A process for forming a pattern, comprising the steps of applying the positive resist composition of claim 1 onto a substrate to form a resist coating; heat treating the resist coating and exposing it to high-energy radiation or electron beam through a photomask; and heat treating the exposed coating and developing it with a developer;
said process further comprising the step of coating a protective film on the resist coating,the exposing step being effected by the immersion lithography wherein a high refractive index liquid having a refractive index of at least 1.0 intervenes between the protective film and a projection lens.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2006-103336 |
Apr 2006 |
JP |
national |