In a resist composition for supercritical development process, a development process is carried out by supercritical development process without alkali development process, and includes a base resin which is not removed by said supercritical developer in the presence of acid (A) and an acid generator which generates an acid upon activation by light or electromagnetic waves (B).
Description
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A to 1C show views illustrating steps in a method for pattern formation by lithography.
Claims
1. A resist composition for supercritical development process for forming a resist pattern wherein exposed resist film was treated with a supercritical developer comprising a supercritical fluid to allow the unexposed region of said exposed resist film to be selectively removed, said composition comprises:
a base material resin which is not removed by said supercritical developer in the presence of acid (A); andan acid generator which generates an acid upon activation with at least one of lights and electromagnetic waves (B).
2. The composition according to claim 1 wherein said supercritical fluid comprises carbon dioxide and quarternary ammonium salts.
3. The composition according to claim 1 wherein:
said base resin (A) includes a polymer having a constituent unit (a1) represented by the following general formula (I); andat least a part of hydrogen atoms of the hydroxyl groups of said constituent unit (a1) are substituted by at least one of an acid-dissociable group represented by the following general formula (II) and the following general formula (III).
4. The composition according to claim 1 wherein said polymer included in said base resin (A) further comprises a constituent unit (a2) represented by the following general formula (IV)
5. The composition according to claim 1 wherein one of at least said X and Y are adamantyl group or naphthyl group.
6. The composition according to claim 1 wherein the content of said acid generator (B) is from 5 parts by mass to 30 parts by mass per 100 parts by mass of said base resin (A).
7. The composition according to claim 1 which further comprises a basic compound (C).
8. The composition according to claim 1 wherein the content of said basic compound (C) is from 0.1 part by mass to 20 parts by mass per 100 parts by mass of said base resin (A).
9. The composition according to claim 1 wherein said basic compound (C) is secondary or tertiary amine having alkyl groups having 7 to 15 carbon atoms.
10. The composition according to claim 1 which further comprises an organic acid (D) in an amount of 0.1 part by mass to 20 parts by mass per 100 parts by mass of said base resin (A).
Patent Application
20070196764
