This application claims priority to Japanese Patent Application No. 2023-108324, filed Jun. 30, 2023, the disclosure of which is hereby incorporated by reference in its entirety.
The present invention relates to a sample milling system and also to an apparatus and method for image generation.
Cross Section Polisher (a trademark registered) is known as an apparatus for milling a sample using an ion beam. As a milling method using such a sample milling apparatus, a planar milling method is known which forms a smooth, flat plane by making use of sputtering occurring when an ion beam is made to impinge at a quite small tilt angle on the sample surface.
For example, JP-A-3-36285 discloses an ion milling apparatus consisting of an ion gun for irradiating a rotating sample with an ion beam and a sample rotating mechanism for placing the sample in position and rotating it so that the center of rotation of the sample lies within the surface irradiated by the ion beam. On the sample surface, the center of rotation of the sample deviates a given distance from the position of the center of the ion beam. Because the center of the ion beam and the center of rotation of the sample are out of coincidence in this way, a wider area on the sample can be irradiated with an ion beam from various directions as compared with the case where the center of the beam and the center of rotation of the sample are in coincidence. Consequently, the wider area on the sample can be smoothly etched.
However, during milling, the direction of impingement of the ion beam varies in a complex manner depending on the milling conditions including the rotational speed of the sample and the distance between the center of the ion beam and the center of rotation of the sample. This makes it difficult to determine suitable milling process conditions.
One aspect of the sample milling system associated with the present invention includes: a sample milling apparatus for milling a sample by making an ion beam impinge on the sample; and an image generator apparatus for generating forecasted imagery for a case where the sample is milled using the sample milling apparatus under preset milling process conditions. The forecasted imagery contains information about a distribution of directions of impingement of the ion beam.
With this sample milling system, forecasted imagery is obtained for a case where the sample is milled under the preset milling process conditions and, therefore, suitable milling process conditions can be determined easily.
One aspect of the image generator apparatus associated with the present invention includes: an image generator section for generating forecasted imagery for a case where a sample is milled under preset milling process conditions by the use of a sample milling apparatus that mills the sample by making an ion beam impinge on the sample; and a display controller for displaying the forecasted imagery that contains information about a distribution of directions of impingement of the ion beam.
With this image generator apparatus, it is possible to generate forecasted imagery for a case where the sample is milled under preset milling process conditions and so suitable milling process conditions can be determined easily.
One aspect of the method of image generation associated with the present invention involves the steps of: generating forecasted imagery for a case where a sample is milled under preset milling process conditions using a sample milling apparatus that mills the sample by making an ion beam impinge on the sample; and displaying the forecasted imagery that contains information about a distribution of directions of impingement of the ion beam.
In this method of image generation, it is possible to generate forecasted imagery for a case where the sample is milled under preset milling process conditions and, therefore, suitable milling process conditions can be determined easily.
The preferred embodiments of the present invention are hereinafter described in detail with reference to the drawings. Note that the embodiments provided below are not intended to unduly restrict the contents of the present invention delineated by the claims and that not all the configurations set forth below are essential constituents of the present invention.
A sample milling system associated with a first embodiment of the present invention is first described by referring to
In
Referring still to
The sample milling apparatus 100 mills a sample S by making an ion beam IB impinge on the sample S. The sample milling apparatus 100 is used to prepare a sample for an electron microscope, for example, such as a scanning electron microscope (SEM), a transmission electron microscope (TEM), or a scanning transmission electron microscope (STEM). The sample milling apparatus 100 is also used to prepare a sample for an analytical instrument other than electron microscopes, for example, such as an electron probe microanalyzer (EPMA) or an Auger microprobe.
The sample milling apparatus 100 can mill the sample S by planar milling technology, i.e., a flat and smooth surface is produced by making use of sputtering occurring when the ion beam IB is directed at the surface of the sample S at a quite shallow angle. This milling operation is described in detail below.
Referring still to
The ion source 110 produces the ion beam IB and directs it toward the sample S, thus irradiating the sample S. The ion source 110 is mounted at the top of the vacuum chamber 150.
The sample stage assembly 120 mechanically supports the sample S and includes a tilt mechanism 20, a rotary mechanism 22, a swing mechanism 24, a Z stage 26, and an XY stage 28. The swing mechanism 24 has a swing table 24a on which the XY stage 28 is placed in the example of
The tilt mechanism 20 operates to tilt the sample S so that the angle of impingement (incident angle) a of the ion beam IB relative to the surface Sa of the sample S can be adjusted. The tilt mechanism 20 tilts the sample S by tilting the rotary mechanism 22 and includes a shaft member tiltably supporting the rotary mechanism 22 and a support portion mechanically supporting the shaft member. Alternatively, the tilt mechanism 20 may tilt the sample S by means of a drive mechanism such as an electric motor.
The rotary mechanism 22 rotates the sample S about an axis of rotation A that is perpendicular to the surface Sa of the sample S. When the rotary mechanism 22 is tilted by the tilt mechanism 20, the axis of rotation A also tilts. Therefore, the axis of rotation A remains perpendicular to the surface Sa of the sample S if the sample S is tilted by the tilt mechanism 20. The center of rotation RC of the sample S when it is rotated by the rotary mechanism 22 is at the position of the intersection of the surface Sa of the sample S and the axis of rotation A. The rotary mechanism 22 includes a sample stage to which the sample S is secured and a drive mechanism for rotating the sample stage such as an electric motor.
The swing mechanism 24 swings the sample S, i.e., reciprocates it on the circumference of a circle. The swing mechanism 24 swings the tilt mechanism 20, the rotary mechanism 22, the Z stage 26, and the XY stage 28 together about an axis B (
The Z stage 26 moves the sample S in the Z direction, so that the position of the sample S taken in the Z direction, i.e., the height of the sample S, can be adjusted. The Z stage 26 moves the sample S in the Z direction by moving the tilt mechanism 20 in the Z direction. The Z stage 26 moves the tilt mechanism 20 and the rotary mechanism 22 together in the Z direction. The distance D between the center of rotation RC and the center of swing SC can be adjusted by moving the sample S in the Z direction via the Z stage 26. That is, in the sample milling apparatus 100, the center-to-center distance D is variable. The Z stage 26 moves the sample S in the Z direction by means of a drive mechanism such as an electric motor. Alternatively, the sample S may be moved in the Z direction by manually operating the Z stage 26.
The XY stage 28 moves the sample S in the X direction and Y direction, whereby the positions of the sample S as taken in the X and Y directions can be adjusted. The XY stage 28 moves the sample S in the X and Y directions by moving the Z stage 26 in the X and Y directions. The XY stage 28 moves the tilt mechanism 20, the rotary mechanism 22, and the Z stage 26 together. The XY stage 28 permits adjustment of the eccentric distance B (
The positioning camera 130 is used to determine the position of the optical axis of the ion beam IB. For example, when the chamber door 160 is open and the sample stage assembly 120 has been pulled out of the vacuum chamber 150, if the chamber door 160 is closed and the sample stage assembly 120 is pushed into the chamber 150, then the center of the field of view of the positioning camera 130 coincides with the position of the optical axis of the ion beam IB. When the chamber door 160 is closed, the positioning camera 130 is retracted away from the ion source 110.
The milling observation camera 140 is used to observe the sample S during milling. The optical axis of the observation camera 140 is parallel to the Y axis and disposed outside the vacuum chamber 150. The observation camera 140 permits observation of the sample S located within the chamber 150 through an observation window 162 formed in the chamber 150.
The sample stage assembly 120 is accommodated in the vacuum chamber 150. In the sample milling apparatus 100, the sample S is irradiated with the ion beam IB within the vacuum chamber 150. The interior of the vacuum chamber 150 can be maintained in a subatmospheric state by a vacuum pump (not shown).
The chamber door 160 hermetically seals off the vacuum chamber 150. The sample stage assembly 120 is mounted to the chamber door 160, which in turn is slidable relative to the chamber 150. The chamber door 160 can be opened and closed by sliding the chamber door 160. Therefore, the sample stage assembly 120 can be either pushed into the chamber 150 after closing the chamber door 160 or pulled out of the chamber 150 after opening the chamber door 160.
The controller 170 controls the various parts of the sample milling apparatus 100. The controller 170 controls the ion source 110, for example, via an ion source control circuit 112 which converts a control signal from the controller 170 into a drive signal for driving the ion source 110 and outputs the drive signal to the ion source 110. Furthermore, the controller 170 controls other component such as the sample stage assembly 120. If the user sets milling process conditions, the controller 170 operates the ion source 110 and the sample stage assembly 120 according to the set milling process conditions.
When the sample S is planar milled using the sample milling apparatus 100, milling process conditions are set which include the energy of the ion beam IB (accelerating voltage of the ion beam), the angle of impingement a of the ion beam IB, the rotational speed of the sample S, the angular range of swing of the sample S, the speed of swing of the sample S, the eccentric distance B between the center of rotation RC of the sample S and the center BC of the ion beam IB, the distance D between the center of rotation RC and the center of swing SC of the sample S, and the milling process time.
In the sample milling apparatus 100, if the milling process conditions are set, the controller 170 controls the ion source 110 and the sample stage assembly 120 according to the milling process conditions. In particular, the controller 170 controls the accelerating voltage at the ion source 110 according to the set energy of the ion beam IB. Also, the controller 170 controls the tilt mechanism 20 according to the set angle of impingement a of the ion beam IB. Furthermore, the controller 170 controls the rotary mechanism 22 according to the set rotational speed. In addition, the controller 170 controls the swing mechanism 24 according to the set angular range and speed of swing. Moreover, the controller 170 controls the XY stage 28 according to the set distance B between the center of rotation RC of the sample S and the center BC of the ion beam IB. Additionally, the controller 170 controls the Z stage 26 according to the set distance D between the center of rotation RC and the center of swing SC of the sample S.
As a result, in the sample milling apparatus 100, the distance B between the center of rotation RC of the sample S and the center BC of the ion beam IB becomes equal to the preset distance. Also, the distance D between the center of rotation RC and the center of swing SC of the sample S becomes equal to the preset distance. Furthermore, the tilt angle of the sample S becomes equal to the set angle of impingement a, i.e., the angle at which the ion beam IB impinges on the surface Sa of the sample S. The ion beam IB from the ion source 110 hits the sample S with the set energy (accelerating voltage). The ion beam IB is incident on the surface Sa of the sample S at the set angle of impingement a. At this time, the sample S rotates at the set rotational speed about the center of rotation RC and swings at the set swing speed through the set angular range about the center of swing SC. The controller 170 causes the ion beam IB to be emitted only during the milling time set into the ion source 110. Consequently, the sample S can be milled under the preset milling process conditions.
The tilt angle of the sample S, the distance B between the center of rotation RC of the sample S and the center BC of the ion beam IB, the distance D between the center of rotation RC and the center of swing SC of the sample S, and other parameters may be adjusted by a human operator by manually operating the sample stage assembly 120.
The display section 230 displays the image created by the processor 210. The function of the display section 230 can be realized by a liquid crystal display (LCD), a touch panel acting also as the input section 220, or the like.
Programs and various kinds of data permitting a computer to operate as various portions of the processor 210 are stored in the storage section 240. The storage section 240 functions also as a working area for the processor 210. The function of the storage section 240 can be realized by a hard disk, a RAM (random access memory), or the like.
The functions of the processor 210 can be accomplished by executing computer programs with hardware devices including various processors (such as a CPU and a DSP (digital signal processor)). The processor 210 includes an image generating section 212 and a display control section 214.
The image generating section 212 generates forecasted imagery for a case where the sample S is milled under preset milling process conditions using the sample milling apparatus 100. The forecasted imagery contains information about the intensity of impingement of the ion beam IB in a case where the sample S is milled under the preset milling process conditions and information about the direction of the impingement of the ion beam IB. That is, it is known, from the forecasted imagery, as to what position on the sample S was hit by the ion beam IB, what intensity did the beam IB have, and from what direction did the beam arrive. The image generating section 212 performs simulations based on the preset milling process conditions and creates forecasted imagery.
The forecasted imagery created by the image generating section 212 is displayed on the display section 230 under the control of the display control section 214.
A method of generating forecasted imagery is next described.
First, the image generating section 212 acquires information about milling process conditions. For this purpose, the image generating section 212 accepts information about the milling process conditions which have been entered by the user via the input section 220.
Slider objects are arranged in the milling process condition setting section G2 to set various parameters of the milling process conditions. The slider objects include a slider object for setting the energy of the ion beam IB, a slider object for setting the angle of impingement a of the ion beam IB, a slider object for setting the angular range of swing of the sample S, an eccentricity setting slider object for setting the eccentric distance B between the center of rotation RC of the sample S and the center BC of the ion beam IB, a slider object for setting the distance D between the center of rotation RC and the center of swing SC of the sample S, and a slider object for setting a milling time. A further slider object (not shown) for setting the swing speed of the sample S may be positioned in the milling process condition setting section G2.
The GUI elements for setting parameters are not restricted to slider objects or slider widgets. An input field for directly entering the numerical values of parameters, for example, may be positioned in the milling process condition setting section G2.
The milling process condition setting section G2 is displayed in the same manner, for example, as the GUI for setting the milling process conditions in the sample milling apparatus 100. Therefore, after checking the forecasted imagery generated by the image generator apparatus 200 and determining the milling process conditions, an operation for entering various parameters into the GUI of the sample milling apparatus 100 can be carried out with ease.
An image of the sample S which complies with the set milling process conditions is displayed on the sample image display section G4. In particular, an image of the sample S is displayed in such a way that the tilt angle of the sample S (angle of impingement of the ion beam IB), the eccentric distance B between the center of rotation RC of the sample S and the center BC of the ion beam IB, and the distance D between the center of rotation RC and the center of swing SC of the sample S are reflected.
With the sample milling apparatus 100, the eccentric distance B is adjusted while watching the positioning camera 130. Therefore, the distance between the center of rotation RC of the sample S and the center BC of the ion beam IB as computed from the tilt angle of the sample S and from the eccentric distance B and as viewed through the positioning camera 130 is displayed on the sample image display section G4.
The generated, forecasted imagery is displayed on the forecasted imagery display section G6. On the imagery display section G6, an image of an unmilled sample and forecasted imagery are displayed superimposed. A slider object 6 is disposed on the forecasted imagery display section G6 to set a transmissivity when the forecasted imagery is superimposed on the image of the unmilled sample. Furthermore, the display section G6 has a check box 8 so that only half of the forecasted imagery is overlappingly displayed on the image of the unmilled sample. The method of displaying forecasted imagery on the forecasted imagery display section G6 will be described in detail later.
1.2.2. Step of Acquiring Information about Ion Beam (S20)
Then, the image generating section 212 acquires information about the ion beam IB. This information is, for example, about a distribution of luminance across the ion beam IB when the ion beam IB having the set energy is made to impinge at the set angle α on the sample S. This information can be derived, for example, from an ion beam image taken by shooting a test sample which emits light by being irradiated with the ion beam. The method of acquisition of the ion beam image is hereinafter described.
First, a glass sample is prepared as a sample that emits light by being irradiated by an ion beam. Then, as shown in
Then, as shown in
Then, the glass sample under irradiation by the ion beam IB is shot with the milling observation camera 140. As a result, an ion beam image can be obtained. At this time, the electrical current of the ion beam IB is measured.
The captured ion beam image has been taken at an angle corresponding to the tilt angle of the glass sample relative to the surface of the glass sample. To achieve an image taken normal to the surface of the glass sample, the captured ion beam image is stretched by a factor corresponding to the tilt angle. Consequently, the ion beam image has been taken perpendicular to the surface of the glass sample. For example, the ion beam image is a grayscale image consisting of pixels whose luminance levels correspond to the levels of the intensity of impingement of the ion beam IB.
1.2.3. Step of Generating forecasted Imagery at each Instant of Time (S30)
Then, forecasted imagery at a first instant of time at which a milling process is started is generated.
As shown in
For each pixel of the impingement intensity distribution image Ib-1 at the first instant, the vector is resolved into components. A radial component image Ir-1 representing a distribution of the intensity levels of the radial components of the ion beam IB and a rotational direction component image In-1 representing a distribution of the intensity levels of the components in the rotational direction of the ion beam IB are generated.
Specifically, for each pixel of the impingement intensity distribution image Ib-1, a vector is defined to have a magnitude equal to luminance level Se1 and a sense in the direction of impingement of the ion beam IB. The vector is resolved about the center of rotation RC into a radial direction component Se1 cos ζ and a rotational direction component Se1 sin ζ. The angle ζ is formed between the radial direction and the direction of impingement of the ion beam in each pixel. In
Then, a vector component distribution image Irn-1 representing a distribution of impingement intensity in the radial direction of the ion beam and impingement intensity in the rotational direction at the first instant of time is created by superimposing the radial component image Ir-1 and the rotational component image In-1. In particular, for each pair of corresponding pixels of the radial component image Ir-1 and the rotational direction component image In-1, luminance values are summed up while taking the radial direction as positive and the rotational direction as negative.
It is assumed that the radial component image Ir-1 has 256 gray levels and that the rotational direction image In-1 also has 256 gray levels. These images are summed up while taking the radial direction as positive and the rotational direction as negative, thus generating an image with 512 gray levels. When this image with 512 gray levels is output with 256 levels, a luminance level corresponding to a zero level is modified to the intermediate, 128th gray level and then the image is normalized using maximum and minimum values of great absolute values.
Consequently, in the vector component distribution image Irn-1, it is shown that locations brighter than the intermediate color have higher ion beam intensity levels in the radial direction and locations darker than the intermediate color have higher ion beam intensity levels in the rotational direction. In this way, the radial direction impingement intensity of the ion beam IB and the rotational direction impingement intensity of the ion beam IB can be visualized. It can be said that, in the vector component distribution image Irn-1, locations brighter than the intermediate color tend to produce milling stripes in the radial direction and locations darker than the intermediate color tend to produce milling stripes in the rotational direction.
In this way, the impingement intensity distribution image Ib-1 and the vector component distribution image Irn-1 can be generated as forecasted imagery at the first instant of time.
(2-1) Hit Position of Ion Beam during Swing Motion
Then, at a second instant of time, the hit position of the ion beam IB moved by swinging of the sample S, i.e., the position of the center BC, is found. The second instant is later than the first instant. For example, the second instant is 1 second later than the first instant.
The coordinates (x1, y1) of the center BC of the ion beam IB at the second instant are then computed using the angle of rotation β of the ion beam caused by a swing, the distance D between the center SC of the swing and the center of rotation RC, and the eccentric distance B between the center of rotation RC and the center BC of the beam. The results of the computation are transformed into polar coordinates (r, θ1) which can be found from the following calculation formulas:
(2-2) Hit Position of Ion Beam at Second Instant of Time during Rotation
The hit position of the ion beam IB assumed at the second instant of time when moved by a rotation is next found.
During an interval from the first instant to the second instant, the sample S is rotated, thus rotating the ion beam IB. The angle of rotation γ of the beam IB is found. The angle of rotation γ can be found from the rotational speed and the elapsed time.
Then, the coordinates (x2, y2) of the center BC of the ion beam IB at the second instant of time are found. The angle of rotation γ is added to the angle θ1. The coordinates of the center BC are set to (r, θ2). Then, the coordinates (r, θ2) are transformed into orthogonal coordinates (x2, y2). The angle of rotation ϕ of the ion beam IB at the second instant can be found by adding together the angle of rotation β and the angle of rotation γ. The coordinates (x2, y2) of the center BC can be found using the following calculation formulas:
(2-3) Resolving of Vector into Its Components
Then, the ion beam image Ib is placed at the coordinates (x2, y2) of the center BC of the ion beam IB, and an impingement intensity distribution image Ib-2 at the second instant of time is generated. Then, for each pixel of the impingement intensity distribution image Ib-2 at the second instant, the vector is resolved into its components. Thus, a radial component image Ir-2 and a rotational component image In-2 at the second instant of time are generated.
With respect to each of the other pixels of the impingement intensity distribution image Ib-2, the radial direction component Sr and the rotational direction component Sn can be found using the above formulas. Consequently, the radial component image Ir-2 and the rotational direction component image In-2 can be generated.
Then, by superimposing the radial component image Ir-2 and the rotational component image In-2, a vector component distribution image Irn-2 representing a distribution of the impingement intensity in the radial direction of the ion beam and the impingement intensity in the rotational direction at the second instant of time is generated. In this way, the impingement intensity distribution image Ib-2 and the vector component distribution image Irn-2 can be generated as forecasted imagery at the second instant of time.
Also, with respect to each instant of time later than the second instant and up to the end of the milling process time, an impingement intensity distribution image and a vector component distribution image are generated in the same manner as for the second instant.
The impingement intensity distribution images generated at successive instants of time from the first instant up to the nth instant following the milling process time are added up to generate an impingement intensity distribution image representing a distribution of the impingement intensity of the ion beam IB after a passage of the set milling process time. In particular, the luminance values of the corresponding pixels of the impingement intensity distribution images generated at the first to nth instants, respectively, are summed up to generate an impingement intensity distribution image after a passage of the set milling process time.
Similarly, vector component distribution images generated at successive instants from the first to nth instants are summed up to generate a vector component distribution image which represents a distribution of the impingement intensity of the ion beam IB in the radial direction assumed after a passage of the set milling process time and a distribution of the impingement intensity in the rotational direction. As a result of the processing steps described so far, an impingement intensity distribution image and a vector component distribution image can be generated as forecasted imagery for a case where the sample S is milled under the set milling process conditions.
More specifically, a first impingement intensity distribution image of
It is seen from the four impingement intensity distribution images of
In each vector component distribution image of
It is seen from the four vector component distribution images of
On the other hand, when the sample S is swung, there occurs a region which is irradiated with the ion beam in the vicinity of the center of the sample S and which is wider in area as viewed in the rotational direction and also in the radial direction than when the sample is not swung. Furthermore, outside the vicinity of the center, the ion beam intensity is lower both in the radial direction and in the rotational direction. That is, it is seen that, when the sample S is swung, a smooth and wider area which is less affected by milling stripes can be formed near the center of the sample S than when the sample S is not swung.
In each vector component distribution image of
For example, a distribution taken in the direction of impingement of the ion beam IB may be represented in terms of colors. In particular, the impingement intensity in the radial direction is represented in cyan (green+blue), and the impingement intensity in the radial direction may be represented in red. In this display method, if the impingement intensity in the radial direction and the impingement intensity in the rotational direction are identical, then there is no chroma and thus a gray scale occurs. Therefore, even in a vector component distribution image, the same information as in an impingement intensity distribution image can be represented. That is, in this display method, a distribution of the intensity of the ion beam IB and a distribution of directions of impingement can be represented in one image. The combination of colors is not restricted to cyan and red. A combination of magenta (red+blue) and green may also be possible. Furthermore, a combination of yellow (red+green) and blue may be possible.
In the luminance profiles of the above-cited
Since the ion milling rate differs according to the energy of the ion beam or the material constituting the sample, the luminance of each impingement intensity distribution image may be corrected according to either the milling process conditions set by the user or the used sample.
Referring back to
In the example of
The milling process conditions include the energy of the ion beam IB (accelerating voltage of the ion beam), the angle of impingement a of the ion beam IB, the rotational speed of the sample S, the angular range of swing of the sample S, the swing speed of the sample S, the eccentric distance B between the center of rotation RC of the sample S and the center BC of the ion beam IB, the distance D between the center of rotation RC and the center of swing SC of the sample S, and the milling time. Information about these milling process conditions are stored in the storage section 240.
Then, the image generating section 212 acquires information about the ion beam IB (S102). For this purpose, the image generating section 212 acquires the ion beam image Ib as shown in
The image generating section 212 then generates forecasted imagery at the first instant of time based on the milling process conditions and the information about the ion beam IB (S104) by the technique described in the above-described step S30. The forecasted imagery at the first instant consists of an impingement intensity distribution image Ib-1 and a vector component distribution image Irn-1.
Then, the image generating section 212 generates forecasted imagery for the mth instant of time based on the milling process conditions (S106). In this specific example, assuming that m=2, the image generating section 212 generates forecasted imagery at the second instant of time. An impingement intensity distribution image Ib-2 and a vector component distribution image Irn-2 are generated as forecasted imagery forecasted to occur at the second instant by the image generating section 212 using the technique described in the above-described step S30.
Then, the image generating section 212 adds up the forecasted imagery produced at the first instant and the forecasted imagery produced at the second instant (S108). In particular, the generating section adds up the impingement intensity distribution images Ib-1 and Ib-2. Also, the generating section adds up the vector component distribution images Irn-1 and Irn-2. Consequently, forecasted imagery can be created for the case where milling is done from the first to the second instant.
The image generating section 212 then makes a decision as to whether forecasted imagery for the nth instant of time has been generated (S110). If the decision at S110 is negative (No), i.e., forecasted imagery for the nth instant has not been generated, the image generating section 212 determines that m=2+1=3 and returns to the step S106, where forecasted imagery is generated for a third instant of time (S106). The image generating section 212 adds the forecasted imagery for the third instant to the forecasted imagery derived when milling is done from the first instant to the second instant (S108). As a result, forecasted imagery can be created for a case where milling is done from the first instant to the third instant.
The image generating section 212 repeatedly performs the step S106 of generating forecasted imagery at the mth instant of time, the step S108 of adding up the forecasted imagery at the mth instant and the forecasted imagery for the case where milling is done from the first instant to the (m−1)th instant, and the step S110 of making a decision as to whether forecasted imagery for the nth instant has been generated.
If the image generating section 212 determines that forecasted imagery for the nth instant has been generated, i.e., the decision at the step S110 is affirmative (Yes), the display control section 214 displays the generated forecasted imagery on the display section 230. The display control section 214 displays the forecasted imagery on the forecasted imagery display section G6 of the GUI screen 4 by any one of the display methods illustrated in
The sample milling system 2 includes the sample milling apparatus 100 for milling the sample S by making the ion beam IB impinge on the sample S and the image generator apparatus 200 for generating forecasted imagery for a case where the sample S is milled under preset milling process conditions by the use of the sample milling apparatus 100. This permits the sample milling system 2 to determine suitable milling process conditions with ease.
Furthermore, in the sample milling system 2, the generated forecasted imagery contains information about a distribution of the ion beam IB as taken in the direction of impingement. Therefore, the sample milling system 2 can forecast on what area of the sample S and in what directions milling stripes are formed. For example, with respect to an area of the sample S on which the ion beam IB impinges only from one direction, milling stripes may form along the direction of impingement of the ion beam IB.
In the sample milling system 2, the sample milling apparatus 100 includes the ion source 110 for emitting the ion beam IB at the sample S and the sample stage assembly 120 that is equipped both with the tilt mechanism 20 for tilting the sample S and with the rotary mechanism 22 for rotating the sample S. The milling process conditions include the tilt angle and the rotational speed of the sample S. Since the sample milling system 2 can generate forecasted imagery taking account of the tilt angle and rotational speed, the system can easily determine suitable conditions for the tilt angle and rotational speed of the sample S.
In the sample milling system 2, the sample stage assembly 120 has the swing mechanism 24 for swinging the sample S. The center of swing SC of the sample S and the center of rotation RC of the sample S are at different positions. The milling process conditions include the distance D between the center of rotation RC and the center of swing SC. Therefore, the sample milling system 2 can swing the sample S while rotating it. This can enlarge the area on the surface Sa of the sample S which is irradiated with the ion beam IB. Furthermore, the area on the surface Sa of the sample S which is irradiated with the ion beam IB from multiple directions can be enlarged. In addition, the sample milling system 2 can generate forecasted imagery taking account of the center-to-center distance D and so suitable conditions for the distance D can be determined easily.
Additionally, in the sample milling system 2, the distance D between the center of rotation RC of the sample S and the center of swing SC of the sample S is variable. Because the sample milling system 2 can generate forecasted imagery while taking account of the center-to-center distance D, suitable conditions for the distance D can be determined easily.
In the sample milling system 2, the eccentric distance B between the center BC of the ion beam IB on the sample S and the center of rotation RC of the sample S is variable, and the milling process conditions include the eccentric distance B between the beam center BC and the center of rotation RC. Therefore, in the sample milling system 2, the area on the surface Sa of the sample S which is irradiated with the ion beam IB can be widened. Furthermore, in the sample milling system 2, forecasted imagery taking account of the eccentric distance B can be created and so suitable conditions for the eccentric distance B can be determined easily.
In the sample milling system 2, the image generator apparatus 200 calculates a direction of impingement of the ion beam IB taken at each instant during the milling process based on the milling process conditions and generates forecasted imagery based on the calculated direction of impingement of the ion beam IB taken at each instant. Therefore, the sample milling system 2 can create forecasted imagery containing information about a distribution of directions of impingement of the ion beam IB.
In the sample milling system 2, the image generator apparatus 200 resolves, at each instant of time, a vector representing the direction and intensity of impingement of the ion beam IB into a radial direction component and a rotational direction component about the center of rotation RC of the sample S. Furthermore, the image generator apparatus 200 creates forecasted imagery containing information about a distribution of intensity of the ion beam IB as taken in a radial direction and information about a distribution of the intensity of the ion beam IB as taken in the radial direction, based on the radial direction component and the rotational direction component derived at each instant of time. Consequently, with the sample milling system 2, it is possible to know from the forecasted imagery what regions on the surface Sa of the sample S tend to produce milling stripes in the radial direction and milling stripes in the rotational direction.
In the sample milling system 2, the image generator apparatus 200 causes forecasted imagery and an image of the unmilled sample S to be shown superimposed. Therefore, in the sample milling system 2, it is possible to display what regions of the sample S have been milled and how they have been milled in an easily understandable manner.
In the sample milling system 2, the image generator apparatus 200 provides a color representation of directions of impingement of the ion beam in forecasted imagery. Consequently, in the image generator apparatus 200, a distribution of directions of impingement of the ion beam within the forecasted imagery can be displayed in an easily understandable manner.
In the sample milling system 2, forecasted imagery contains information about a distribution of the impingement intensity of the ion beam. Therefore, with the sample milling system 2, when the sample S is milled under preset milling process conditions, it is possible to know what region of the sample S is milled to what depth.
In the sample milling system 2, forecasted imagery contains information about a distribution of the impingement intensity of the ion beam IB as taken in a radial direction about the center of rotation RC of the sample S and information about a distribution of the impingement intensity of the ion beam IB in a rotational direction about the center of rotation RC of the sample S. Therefore, with the sample milling system 2, when the sample S is milled under preset milling process conditions, it is possible to know in what region on the surface Sa of the sample S milling stripes in the radial direction tend to be produced and in what region milling stripes in the rotational direction tend to be produced.
The image generator apparatus 200 includes: the image generating section 212 for generating forecasted imagery for a case where the sample S is milled under preset milling process conditions by the use of the sample milling apparatus 100 for milling the sample S by making an ion beam impinge on the sample; and the display control section 214 for displaying the forecasted imagery. The forecasted imagery contains information about a distribution of the ion beam as taken in the direction of impingement of the beam. Consequently, the image generator apparatus 200 can generate the forecasted imagery for a case where the sample S is milled under the preset milling process conditions and so suitable milling process conditions can be determined easily.
An image generation method for use with the sample milling system 2 involves the steps of: generating forecasted imagery for a case where the sample S is milled under preset milling process conditions by the use of the sample milling apparatus 100 for milling the sample S by making the ion beam IB impinge on the sample S; and displaying the forecasted imagery that contains information about a distribution of directions of impingement of the ion beam IB. Therefore, in the image generation method implemented by the sample milling system 2, there is obtained forecasted imagery for a case where the sample S is milled under the preset milling process conditions. Consequently, suitable milling process conditions can be determined easily.
A sample milling system associated with a second embodiment is next described by referring to
The ion source 110 is a Penning-type ion source and includes an anode 11, a cathode 12, an extraction electrode 13, and a focusing electrode 14 as shown. The anode 11 is cylindrical in shape and has an interior space serving as an ionization chamber for producing ions. A gas such as argon gas is admitted into the ionization chamber from a gas source in an unillustrated manner.
The cathode 12 emits electrons and constitutes polepieces that produce a magnetic field in the ionization chamber. The electrons emitted from the cathode 12 are revolved by the magnetic field produced by the polepieces. A discharge voltage is applied between the anode 11 and the cathode 12 to induce an electric discharge.
The extraction electrode 13 extracts ions produced in the ionization chamber. The electric field produced by the extraction electrode 13 accelerates the ions which are then released as the ion beam IB from the ion source 110. An acceleration voltage is applied between the anode 11 and the extraction electrode 13 to accelerate the ions.
The focusing electrode 14 is disposed between the cathode 12 and the extraction electrode 13 and acts to control the spatial profile of the ion beam IB which is a spatial distribution of the intensity of the ion beam IB.
The ion source 110 can produce the ion beam IB of uniform intensity by controlling the focusing voltage applied to the focusing electrode 14. That is, the ion source 110 can emit the ion beam IB whose intensity has a spatial profile close to that of a collimated beam.
Milling process conditions for the sample milling system 2 include the discharge voltage, the focusing voltage, and the flow rate of gas admitted into the ionization chamber.
The differences of the tapering regions can be seen from the luminance profiles of
A sample milling system associated with a third embodiment is next described by referring to
As shown in
However, if the center-to-center distance D is increased by moving the sample S in the −Z direction by the use of the Z stage 26 while the ion source 110 remains fixed, the distance between the ion source 110 and the sample S increases. This in turn reduces the intensity of the impingement of the ion beam IB, lowering the milling rate.
In the sample milling system 2, when the sample S is moved in the −Z direction by the Z stage 26 in order to increase the center-to-center distance D, the ion source 110 can be moved the same distance in the −Z direction by the ion source drive mechanism 180. Consequently, the center-to-center distance D can be increased without varying the distance between the sample S and the ion source 110.
In this way, in the sample milling system 2, the sample milling apparatus 100 includes the ion source drive mechanism 180 for moving the ion source 110 and so the center-to-center distance D can be varied without changing the distance between the sample S and the ion source 110.
A sample milling system associated with a fourth embodiment is next described by referring to
In the above-described sample milling system 2 associated with the third embodiment, as shown in
In contrast, in the sample milling system 2 associated with the fourth embodiment, as shown in
The swing drive mechanism 190 includes the chamber door 160 and a flange 192 by which the door 160 is movably supported, the swing mechanism 24 being mounted to the chamber door 160. The flange 192 is secured to the chamber 150.
As shown in
In this way, the sample milling system 2 includes the swing drive mechanism 190 for moving the swing mechanism 24 and so the center-to-center distance D can be varied without modification to the distance between the sample S and the ion source 110.
A sample milling system associated with a fifth embodiment is next described by referring to
In the sample milling system 2, as shown in
The driver device 24b can move on the XY stage 28 and thus can move the axis of swing B, so that the distance between the ion source 110 and the swing axis B can be adjusted. The driver device 24b includes a vacuum motor, for example.
The tilt mechanism 20 is positioned on the swing table 24a. The rotary mechanism 22 to which the sample S is fastened is disposed on the tilt mechanism 20. The tilt mechanism 20 is designed to be capable of moving on the swing table 24a in the Y direction, whereby the distance between the ion source 110 and the sample S can be adjusted. In the sample milling system 2, the ion source 110 is mounted to the inner sidewall of the chamber 150 which is on the negative side of the Y axis.
The distance D between the swing center SC and the center of rotation RC is increased, for example, by moving the driver device 24b of the swing mechanism 24 in the −Y direction so that the swing axis B moves in the −Y direction. At this time, the sample S is moved the same distance as the swing axis B in the +Y direction by the use of the XY stage 28. Consequently, the center-to-center distance D can be increased without varying the distance between the sample S and the ion source 110.
In this way, in the sample milling system 2, the swing mechanism 24 is capable of moving in the Y direction and, therefore, the center-to-center distance D can be varied without changing the distance between the sample S and the ion source 110.
A sample milling system associated with a sixth embodiment is next described by referring to
In the above-described sample milling system 2 associated with the first embodiment, the impingement intensity distribution images of
An impingement direction distribution image representing only a distribution of the intensity of the ion beam IB as taken in the direction of impingement may be generated as forecasted imagery by the image generator apparatus 200.
It is seen from the impingement direction distribution images of
A processing sequence performed by the image generator apparatus 200 to generate images is described by referring to the flowchart of
First, the image generating section 212 acquires information about milling process conditions (S100). Then, the image generating section 212 acquires information about the ion beam IB (S102). For this purpose, the ion beam image Ib of
Then, the image generating section 212 operates so that an impingement direction distribution image at the first instant of time is generated as forecasted imagery at the first instant of time, based on the information about the process conditions and the ion beam IB (S104).
Then, the image generating section 212 generates an image representing an impingement direction distribution at the mth instant of time based on the milling process conditions (S106).
Then, the image generating section 212 adds up the impingement direction distribution images I-1 and I-2 (S108). For example, these distribution images I-1 and I-2 are superimposed on top of each other. The image generating section 212 then makes a decision as to whether forecasted imagery for the nth instant has been generated (S110).
The image generating section 212 repeatedly performs the step S106 of generating an impingement direction distribution image for the mth instant, the step S108 of adding up the impingement direction distribution image at the mth instant and the impingement direction distribution image for the case where milling is done from the first instant to the (m−1)th instant, and the step of S110 of making a decision as to whether the impingement direction distribution image at the nth instant has been generated until the impingement direction distribution image at the nth instant is generated.
If the decision at step S110 is affirmative (Yes), indicating that the image generating section 212 has generated an impingement direction distribution image at the nth instant, the display control section 214 displays the generated impingement direction distribution image on the display section 230. In the displayed distribution image, directions of impingement are indicated by arrows as shown in
In the sample milling system 2 associated with the sixth embodiment, forecasted imagery contains information about an impingement direction distribution of the ion beam IB emitted during milling and, therefore, it is possible to forecast where and in what directions milling stripes caused by milling occur on the sample S, in the same manner as the sample milling system 2 associated with the first embodiment.
It is to be understood that the present invention is not restricted to the foregoing embodiments but rather can be implemented in variously modified forms without departing from the gist of the present invention. In the above-described first through sixth embodiments, the sample milling apparatus 100 rotates and swings the sample S. The operation of the sample milling apparatus 100 is not restricted to this. For example, the sample milling apparatus 100 may slide the sample S along one axis perpendicular to the optical axis of the ion beam IB while rotating the sample S. Furthermore, in the sample milling apparatus 100, the sample S may be moved along the X and Y axes perpendicular to the optical axis of the ion beam IB and the surface Sa of the sample S may be scanned with the ion beam IB.
Note that the foregoing embodiments and modifications are merely exemplary and that the present invention is not restricted thereto. For example, the embodiments and modifications can be combined appropriately.
It is to be understood that the present invention is not restricted to the embodiments described above and that the invention can be practiced in variously modified forms. For example, the present invention embraces configurations substantially identical to the configurations described in the embodiments. What are meant by substantially identical configurations are configurations identical in functions, method, and results or in purposes and effects, for example. Furthermore, the present invention embraces configurations which are similar to those described in the foregoing embodiments except that nonessential portions have been replaced. In addition, the present invention embraces configurations which are identical in yielded advantageous effects or achieved purposes to the configurations described in the foregoing embodiments. Further, the present invention embraces configurations similar to those described in the foregoing embodiments except that a well-known technique is added.
Number | Date | Country | Kind |
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2023-108324 | Jun 2023 | JP | national |