Claims
- 1. A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer, containing an impurity and having a plurality of windows having different sizes formed therein, provided on the semiconductor substrate; and
- a first layer provided in at least the windows provided in the insulating layer, the first layer not extending over a periphery of the windows to a surface of the insulating layer,
- wherein the surface of the insulating layer and a surface of the first layer opposite the semiconductor substrate are coplanar, and
- wherein the semiconductor substrate in contact with the first layer also contains the impurity.
- 2. A semiconductor device according to claim 1, wherein a thickness of said insulating layer and a thickness of said first layer are equal to each other.
- 3. A semiconductor device according to claim 1, wherein said insulating layer comprises silicon oxide.
- 4. A semiconductor device according to claim 1, wherein said insulating layer comprises phospho-silicate glass.
- 5. A semiconductor device according to claim 1, wherein said first layer comprises polycrystalline silicon.
Priority Claims (5)
Number |
Date |
Country |
Kind |
2-235893 |
Sep 1990 |
JPX |
|
2-235894 |
Sep 1990 |
JPX |
|
2-257248 |
Sep 1990 |
JPX |
|
2-326052 |
Nov 1990 |
JPX |
|
2-20269 |
Jan 1991 |
JPX |
|
Parent Case Info
This application is a division of application Ser. No. 08/390,548 filed Feb. 17, 1995, now U.S. Pat. No. 5,597,741 which is a division of application Ser. No. 08/067,788 filed May 27, 1993, now U.S. Pat. No. 5,476,799 which is a division of application Ser. No. 07/755,452 filed on Sep. 5, 1991 now U.S. Pat. No. 5,242,858.
US Referenced Citations (3)
Divisions (3)
|
Number |
Date |
Country |
Parent |
390548 |
Feb 1995 |
|
Parent |
67788 |
May 1993 |
|
Parent |
755452 |
Sep 1991 |
|