Number | Date | Country | Kind |
---|---|---|---|
2001-14004 | Mar 2001 | KR |
Number | Name | Date | Kind |
---|---|---|---|
5736461 | Berti et al. | Apr 1998 | A |
5780362 | Wang et al. | Jul 1998 | A |
5789298 | Gardner et al. | Aug 1998 | A |
5902129 | Yoshikawa et al. | May 1999 | A |
6004853 | Yang et al. | Dec 1999 | A |
6008111 | Fushida et al. | Dec 1999 | A |
6171959 | Nagabushnam | Jan 2001 | B1 |
6180501 | Pey et al. | Jan 2001 | B1 |
6197646 | Goto et al. | Mar 2001 | B1 |
6287913 | Agnello et al. | Sep 2001 | B1 |
6291354 | Hsiao et al. | Sep 2001 | B1 |
6340617 | Goto | Jan 2002 | B1 |
6346477 | Kaloyeros et al. | Feb 2002 | B1 |
6376320 | Yu | Apr 2002 | B1 |
6388327 | Giewont et al. | May 2002 | B1 |
6399467 | Erhardt et al. | Jun 2002 | B1 |
6406986 | Yu | Jun 2002 | B1 |
6461951 | Besser et al. | Oct 2002 | B1 |
20010001297 | Wang et al. | May 2001 | A1 |
20020064919 | Wang | May 2002 | A1 |
20020086486 | Tanaka et al. | Jul 2002 | A1 |
Entry |
---|
K. Inoue et al. A New Cobalt Salicide Technology For 0.15 micron CMOS Using High-Temperature Sputtering and In-situ Vacuum Annealing, Dec. 10-13, 1995, International Electron Devices Meeting. |