using the removal of at least part of spacer

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H01L29/6653

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6653using the removal of at least part of spacer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,412
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with inner spacer
- Patent number 12,166,129
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having source or drai...
- Patent number 12,159,901
- Issue date Dec 3, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 12,159,920
- Issue date Dec 3, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wufeng Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,159,902
- Issue date Dec 3, 2024
- TAIWAN SEMICONDUCTOR MANUFACURING COMPANY, LTD.
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for semiconductor device structure
- Patent number 12,154,970
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tze-Chung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moon-shaped bottom spacer for vertical transport field effect trans...
- Patent number 12,154,985
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based devices having inner spacer structures or gate por...
- Patent number 12,148,812
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming finFET with low-dielectric-constant gate electrod...
- Patent number 12,148,832
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate structure with different lengths...
- Patent number 12,142,666
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yu Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,132,096
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform interfacial layer on vertical fin sidewalls of vertical tra...
- Patent number 12,132,098
- Issue date Oct 29, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having epitaxial structure
- Patent number 12,131,943
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate spacers extending below a fin top...
- Patent number 12,125,891
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure incorporating air gap
- Patent number 12,125,848
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers in transistors and methods forming same
- Patent number 12,125,897
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabrication of a vertical fin-based field eff...
- Patent number 12,125,914
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 12,119,393
- Issue date Oct 15, 2024
- Adeia Semiconductor Solutions LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate contacts and methods of forming the same
- Patent number 12,119,259
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to create air gaps
- Patent number 12,112,980
- Issue date Oct 8, 2024
- Lam Research Corporation
- Patrick A. Van Cleemput
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densified gate spacers and formation thereof
- Patent number 12,107,145
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-En Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact for VTFETs
- Patent number 12,107,147
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing
- Patent number 12,094,953
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,094,777
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted contacts and methods of fabricating the same in semiconducto...
- Patent number 12,094,942
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INNER SPACER FORMATION THROUGH STIMULATION
- Publication number 20240413215
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Jen Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION LAYER UNDER CONTACT
- Publication number 20240395623
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240395892
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSIFIED GATE SPACERS AND FORMATION THEREOF
- Publication number 20240395898
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-En CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE INCORPORATING AIR GAP
- Publication number 20240395808
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE
- Publication number 20240395604
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...
- Publication number 20240387658
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240387691
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE
- Publication number 20240387692
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Fin Structures in Semiconductor Devices
- Publication number 20240387694
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20240387673
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ION-ASSISTED SELF-LIMITED CONFORMAL ETCH
- Publication number 20240379372
- Publication date Nov 14, 2024
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS
- Publication number 20240379822
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Channel Devices and Method with Anti-Punch Through Process
- Publication number 20240379816
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE
- Publication number 20240379862
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240371644
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20240371940
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20240371980
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE CONTACTS
- Publication number 20240371689
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND DEVICES FABRICATED TH...
- Publication number 20240363395
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...
- Publication number 20240363426
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240355904
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Chien CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES
- Publication number 20240355896
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240355903
- Publication date Oct 24, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH AIR GATE SPACER AND AIR GATE CAP
- Publication number 20240347625
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Chi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACER FOR A GATE STRUCTURE OF A TRANSISTOR
- Publication number 20240347616
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Hsiu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING CAP ON CONTACT STRUCTURE
- Publication number 20240339356
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chiang TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...
- Publication number 20240339538
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS

using the removal of at least part of spacer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices and methods of manufacturing thereof

Nanosheet channel-to-source and drain isolation

Semiconductor device structure with inner spacer

Gate-all-around integrated circuit structures having source or drai...

Semiconductor structure and fabrication method thereof

Semiconductor device structure and methods of forming the same

Method for semiconductor device structure

Forming nanosheet transistor using sacrificial spacer and inner spa...

Moon-shaped bottom spacer for vertical transport field effect trans...

Nano-sheet-based devices having inner spacer structures or gate por...

Method of forming finFET with low-dielectric-constant gate electrod...

Semiconductor device having a gate structure with different lengths...

Contact over active gate structures for advanced integrated circuit...

Integrated circuit with doped low-k sidewall spacers for gate stacks

Semiconductor device structure with metal gate stack

Uniform interfacial layer on vertical fin sidewalls of vertical tra...

Semiconductor structure having epitaxial structure

Semiconductor device having gate spacers extending below a fin top...

Semiconductor device structure incorporating air gap

Air spacers in transistors and methods forming same

Method and system for fabrication of a vertical fin-based field eff...

Punch through stopper in bulk finFET device

Transistor gate contacts and methods of forming the same

Method to create air gaps

Densified gate spacers and formation thereof

Self-aligned gate contact for VTFETs

Gate-all-around field effect transistors having end portions of nan...

Semiconductor manufacturing

Method for manufacturing semiconductor device

Butted contacts and methods of fabricating the same in semiconducto...

Patents Applicationslast 30 patents

INNER SPACER FORMATION THROUGH STIMULATION

SEMICONDUCTOR DEVICE WITH ISOLATION LAYER UNDER CONTACT

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

DENSIFIED GATE SPACERS AND FORMATION THEREOF

SEMICONDUCTOR DEVICE STRUCTURE INCORPORATING AIR GAP

SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE

BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTO...

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE

Isolated Fin Structures in Semiconductor Devices

NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES

METHOD FOR ION-ASSISTED SELF-LIMITED CONFORMAL ETCH

SEMICONDUCTOR DEVICES

INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS

Multi-Channel Devices and Method with Anti-Punch Through Process

SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

Fin Field-Effect Transistor With Void and Method of Forming The Same

TRANSISTOR GATE CONTACTS

METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND DEVICES FABRICATED TH...

SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

SEMICONDUCTOR DEVICES WITH AIR GATE SPACER AND AIR GATE CAP

AIR SPACER FOR A GATE STRUCTURE OF A TRANSISTOR

INSULATING CAP ON CONTACT STRUCTURE

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...