Claims
- 1. A semiconductor integrated circuit device comprising:
- a semiconductor integrated circuit pellet having a plurality of bonding pads on a major surface thereof;
- a plurality of conductive leads having inner end portions which extend to the vicinity of the pellet;
- a plurality of connecting wires, one end of each of said wires being connected to one of the pads and the other ends of said wires being connected to the inner end portions of the leads;
- a resin encapsulation body sealing the pellet, connecting wires, and the inner end portions of the leads; and
- wherein a plurality of the inner end portions of said leads each have a plurality of semispherical depressions formed by etching to have a smaller diameter at the bottom of said semispherical depressions than at the surface side of said semispherical depressions, and said plurality of inner end portions of said leads having said semispherical depressions each further have at least one through hole in the vicinity of the periphery of the resin body formed therein between depressions on opposite sides of the inner end portion by overetching when said semispherical depressions are formed by etching, the diameter of the through hole being smaller than the diameter of the depressions at the surface side of said depressions, such that the resin material of said body fills said through holes of said plurality of inner end portions of said leads, both said semispherical depressions and said at least one through hole on said leads enhancing the adhesion and mechanical strength between said resin material and said inner end portions without any substantial reduction in the mechanical strength of said inner end portion.
- 2. A semiconductor integrated circuit device according to claim 1, wherein said pellet is secured on a tab.
- 3. A semiconductor integrated circuit device according to claim 1, wherein the inner end portions of all of said plurality of conductive leads each have at least one through hole formed by etching.
- 4. A semiconductor integrated circuit device according to claim 1, wherein the etching is a chemical etching.
- 5. A semiconductor integrated circuit device according to claim 1, wherein the etching is performed from the surfaces and backs of the inner lead portions of said leads.
- 6. A semiconductor integrated circuit device according to claim 1, wherein said depressions are formed in at least the surfaces and backs of said inner end portions of said leads.
- 7. A semiconductor integrated circuit device according to claim 1, further comprising a tab on which said pellet is placed, the back of said tab also being formed with a plurality of depressions in which said resin is buried.
Priority Claims (1)
Number |
Date |
Country |
Kind |
59-199563 |
Sep 1984 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 767,598 filed Aug. 20, 1985, now abandoned.
US Referenced Citations (13)
Foreign Referenced Citations (9)
Number |
Date |
Country |
52-19971 |
Feb 1977 |
JPX |
54-101264 |
Aug 1979 |
JPX |
55-107252 |
Aug 1980 |
JPX |
55-107251 |
Oct 1980 |
JPX |
57-96561 |
Jun 1982 |
JPX |
58-48953 |
Mar 1983 |
JPX |
58-178545 |
Oct 1983 |
JPX |
59-104147 |
Jun 1984 |
JPX |
59-177952 |
Oct 1984 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
767598 |
Aug 1985 |
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