Semiconductor device

Abstract

A semiconductor device having a plurality of pads P11, P12, P21, P22, P31, and P32 on the same plane of a semiconductor chip with wires W1, W2, and W3 connected between the pads P11 and P12, P21 and P22, and P31 and P32, respectively, so as to be electrically isolated from each other or without contacting each other. For the crossing and electrically isolated wires W1 and W2 respectively having pads P11 and P22 that are adjacently located very close, the wires are connected so that one pad P11 is set to be a first bonding point where a rising portion 12 of one wire W1 is bonded, and the other pad P22 is set to be a second bonding point to which a downwardly inclined end of the other wire W2 opposite from its cubic interchanging crossing and electrically isolated is bonded.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a perspective view of a first embodiment for the semiconductor device of the present invention.

FIG. 2 is a perspective view of a second embodiment for the semiconductor device of the present invention.

FIG. 3 is a perspective view of a third embodiment for the semiconductor device of the present invention.

FIG. 4 is a perspective view of a fourth embodiment for the semiconductor device of the present invention.

FIG. 5 is a perspective view of a fifth embodiment for the semiconductor device of the present invention.

FIG. 6 is a perspective view of a sixth embodiment for the semiconductor device of the present invention.

Claims

1. A semiconductor device comprising: a plurality of pads provided on a same plane of a semiconductor chip, said pads being comprised of pairs thereof; anda plurality of wires each bonded from one pad to another pad with at least one of said wires crossing at least other one of said wires and electrically isolated therefrom.

2. The semiconductor device according to claim 1, wherein said crossing and electrically isolated wires are bonded with one of said pads being a first bonding point and another being a second bonding point when said pads of said crossing and electrically isolated wires are closely adjacent to each other.

3. The semiconductor device according to claim 1, wherein said crossing and electrically isolated wires each including a bonded ball formed at a first bonding point to bond a ball formed by means of a wire bonding apparatus;a rising portion formed on said bonded ball;an inclined portion extending straight through from one of a bended portion and a top of said rising portion to a second bonding point, said bended portion being formed between said top of said rising portion and said second bonding point; andat least one of a concave portion downward, a convex portion upward, and a combination thereof between said top of said rising portion and said bended portion to prevent said wires from contacting each other, a height of said crossing and electrically isolated wires each being substantially equal to or lower than a height of said rising portion.

4. The semiconductor device according to claim 2, wherein said crossing and electrically isolated wires each including a bonded ball formed at said first bonding point to bond a ball formed by means of a wire bonding apparatus;a rising portion formed on said bonded ball;an inclined portion extending straight through from one of a bended portion and a top of said rising portion to said second bonding point, said bended portion being formed between said top of said rising portion and said second bonding point; andat least one of a concave portion downward, a convex portion upward, and a combination thereof between said top of said rising portion and said bended portion to prevent said wires from contacting each other, a height of said crossing and electrically isolated wires each being substantially equal to or lower than a height of said rising portion.

5. The semiconductor device according to claim 2, wherein said second bonding point is formed beforehand with a bump.

6. The semiconductor device according to claim 3, wherein said second bonding point is formed beforehand with a bump.

7. The semiconductor device according to claim 2, wherein every bonding is performed by means of a wire bonding apparatus by applying at least one selected from the group consisting of ultrasonic waves, heat, pressing force, and a combination thereof.

8. The semiconductor device according to claim 3, wherein every bonding is performed by means of a wire bonding apparatus by applying at least one selected from the group consisting of ultrasonic waves, heat, pressing force, and a combination thereof.