Semiconductor device

Abstract

A semiconductor device having: a substrate; nitride-based compound semiconductor layers formed on one main surface of the substrate and made of a nitride-based compound semiconductor; a first electrode formed on the nitride-based compound semiconductor layers and having a Schottky junction with the nitride-based compound semiconductor layers; and a second electrode formed on the nitride-based compound semiconductor layers and subjected to low resistance contact with the nitride-based compound semiconductor layers, wherein the first electrode and substrate are electrically connected through a connection conductor.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

These objects and other objects and advantages of the present invention will become more apparent upon reading of the following detailed description and the accompanying drawings in which:

FIG. 1 is a sectional view showing the configuration of the semiconductor device of the first embodiment of the present invention;

FIG. 2 is a diagram viewing the Schottky barrier diode in FIG. 1 from overhead;

FIG. 3 is a sectional view showing the state in which reverse bias is applied to the Schottky diode in FIG. 1;

FIG. 4 is a sectional view showing the state of the Schottky diode in FIG. 1 when the forward bias shown is applied after which reverse bias is applied in FIG. 3;

FIG. 5 is a sectional view showing the configuration of the semiconductor device of the second embodiment of the present invention;

FIG. 6 is a sectional view showing the state in which reverse bias is applied to the Schottky diode in FIG. 5;

FIG. 7 is a sectional view showing the state of the Schottky diode in FIG. 5 when the forward bias shown is applied after which reverse bias is applied in FIG. 6;

FIG. 8 is a sectional view showing the configuration of the semiconductor device of the third embodiment of the present invention;

FIG. 9 is a diagram showing an overhead view of the HEMT in FIG. 8;

FIG. 10 is a sectional view showing the OFF state of the HEMT in FIG. 8;

FIG. 11 is the sectional view showing the OFF state of the HEMT in FIG. 8 switched to the ON state;

FIG. 12 is a sectional view showing the configuration of the semiconductor device of the fourth embodiment of the present invention;

FIG. 13 is a sectional view showing the OFF state of the HEMT in FIG. 12;

FIG. 14 is the sectional view showing the OFF state of the HEMT in FIG. 12 switched to the ON state;

FIG. 15 is the sectional view showing the OFF state of the semiconductor device of the other embodiments of the present invention switched to the ON state; and

FIG. 16 is a sectional view showing the configuration of the semiconductor device of the other embodiments of the present invention.

Claims

1. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on one main surface of the substrate and comprising a nitride-based compound semiconductor;a first electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer; anda second electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer, wherein the first electrode and the substrate are electrically connected through a connection conductor.

2. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on one main surface of the substrate and comprising a nitride-based compound semiconductor;a first electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer; anda second electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer, wherein the second electrode and the substrate are electrically connected through a connection conductor with an intervening diode.

3. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on one main surface of the substrate and comprising a nitride-based compound semiconductor;a first electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer;a second electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer; anda voltage supply unit capable of applying electrical potential such that the electrical potential applied to the substrate or the nitride-based compound semiconductor layer is higher than the electrical potential applied to the first and the second electrode, and wherein the substrate and the first electrode or the second electrode are electrically connected through a connection conductor with an intervening voltage supply unit.

4. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on one main surface of the substrate and comprising a nitride-based compound semiconductor;a gate electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer;a source electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer; anda drain electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer, wherein the source electrode and the substrate are electrically connected through a connection conductor.

5. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on one main surface of the substrate and comprising a nitride-based compound semiconductor;a gate electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer;a source electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer; anda drain electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer, wherein the gate electrode and the substrate are electrically connected through a connection conductor.

6. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on one main surface of the substrate and comprising a nitride-based compound semiconductor;a gate electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer;a source electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer; anda drain electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer, wherein the drain electrode and the substrate are electrically connected through a connection conductor with an intervening diode.

7. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on one main surface of the substrate and comprising a nitride-based compound semiconductor;a gate electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer;a source electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer;a drain electrode formed on the nitride-based compound semiconductor layer and subjected to low resistance contact with said nitride-based compound semiconductor layer, anda voltage supply unit capable of applying electrical potential such that the electrical potential applied to the substrate or the nitride-based compound semiconductor layer is higher than the electrical potential applied to the gate electrode, the source electrode, and the drain electrode, wherein the substrate and the drain electrode or the source electrode are electrically connected through a connection conductor with the intervening voltage supply unit.

8. The semiconductor device according to claim 1, wherein the nitride-based compound semiconductor layer comprises laminated layers having a heterojunction.

9. The semiconductor device according to claim 2, wherein the nitride-based compound semiconductor layer comprises laminated layers having a heterojunction.

10. The semiconductor device according to claim 3, wherein the nitride-based compound semiconductor layer comprises laminated layers having a heterojunction.

11. The semiconductor device according to claim 1, further comprising a buffer layer provided between the substrate and the nitride-based compound semiconductor layer; wherein the substrate is formed of semiconductor.

12. The semiconductor device according to claim 2, further comprising a buffer layer provided between the substrate and the nitride-based compound semiconductor layer; wherein the substrate is formed of semiconductor.

13. The semiconductor device according to claim 3, further comprising a buffer layer provided between the substrate and the nitride-based compound semiconductor layer; wherein the substrate is formed of semiconductor.

14. The semiconductor device according to claim 1, further comprising a conductive frame provided on the substrate, wherein the substrate is electrically connected to the connection conductor by connecting the frame and the connection conductor.

15. The semiconductor device according to claim 2, further comprising a conductive frame provided on the substrate, wherein the substrate is electrically connected to the connection conductor by connecting the frame and the connection conductor.

16. The semiconductor device according to claim 3, further comprising a conductive frame provided on the substrate, wherein the substrate is electrically connected to the connection conductor by connecting the frame and the connection conductor.

17. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on a surface of the substrate;a first electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer;a second electrode formed on the nitride-based compound semiconductor layer and having a resistance contact with said nitride-based compound semiconductor layer; andmeans for suppressing the current collapses.

18. A semiconductor device comprising: a substrate;a nitride-based compound semiconductor layer formed on a surface of the substrate;a first electrode formed on the nitride-based compound semiconductor layer and having a Schottky junction with said nitride-based compound semiconductor layer;a second electrode formed on the nitride-based compound semiconductor layer and having a resistance contact with said nitride-based compound semiconductor layer; andmeans for generating a parasitic capacitor between the substrate and the nitride-based compound semiconductor layer and controlling the parasitic capacitor.