SEMICONDUCTOR DEVICE

Abstract

A semiconductor device according to the present invention has an insulating substrate having an upper conductor formed on the upper surface and a lower conductor formed on the lower surface; a semiconductor element mounted on the insulating substrate with an under-element solder therebetween; a heat sink whereon the insulating substrate is mounted with an under-substrate solder therebetween; a silicone gel covering the semiconductor element, the under-element solder and the upper conductor; and a filler covering the lower conductor and the under-substrate solder, and having a thermal conductivity larger than the thermal conductivity of air and a fluidity higher than the fluidity of the silicone gel.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing a semiconductor device according to the first embodiment.

FIG. 2 is an enlarged sectional view of the chief part of the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is an enlarged sectional view of the chief part of the semiconductor device according to the second embodiment of the present invention.

FIG. 4 is an enlarged sectional view of the chief part of the semiconductor device according to the third embodiment of the present invention.

FIG. 5 is a sectional view showing a conventional semiconductor device.

FIG. 6 is an enlarged sectional view of the chief part of the semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

First Embodiment

FIG. 1 is a sectional view showing a semiconductor device according to the first embodiment; and FIG. 2 is an enlarged sectional view of the chief part of the semiconductor device.

An insulating substrate 11 has an upper conductor 12 formed on the upper surface thereof and a lower conductor 13 formed on the lower surface thereof. A semiconductor element 14 is mounted on the insulating substrate 11 with an under-element solder 15 therebetween. The lower conductor 13 of the insulating substrate 11 is connected to a heat sink 16 with an under-substrate solder 17 therebetween. On the periphery of the heat sink 16, a case 18 is fixed by an adhesive 19.

The filler 22 injected in the case 18 covers the lower conductor 13 and the under-substrate solder 17, and the silicone gel 20 injected on the filler 22 covers the semiconductor element 14, the under-element solder 15 and the upper conductor 12.

As the filler 22, a material having larger thermal conductivity than air and higher fluidity than the silicone gel 20 is used. As such a filler 22, for example, a fluorine-based inactive liquid can be used. Specifically, when Fluorinert FC-40 (product name) of Sumitomo 3M, Ltd. is used, the thermal conductivity of the Fluorinert is 0.067 W/mK compared with the thermal conductivity of air or 0.024 W/mK. The Fluorinert has a higher fluidity than silicone gel.

Thereby, even if a crack 21 is produced in the under-substrate solder 17, the filler 22 enters inside the crack 21 to suppress the lowering of heat transfer characteristics from the semiconductor element 14 to the heat sink 18 compared with the case of conventional silicone gel. Therefore, even when a long life is required, the heat sink 16 composed of an inexpensive copper (Cu) material can be used. Therefore a semiconductor device of a low price and a long life can be obtained.

Second Embodiment

FIG. 3 is an enlarged sectional view of the chief part of the semiconductor device according to the second embodiment of the present invention. A filler 22 contains fine particles 23 having a thermal conductivity higher than the thermal conductivity of the filler 22 itself. Other constituents are the same as the first embodiment. Thereby, since the thermal conductivity of the filler 22 is improved, the life of the semiconductor device becomes longer than the life of the first embodiment.

As the fine particles 23, a metal such as copper (Cu) and nickel (Ni), carbon nanotube or the like can be used. The thermal conductivity of the Fluorinert used here as the filler 22 is 0.067 W/mK, while the thermal conductivity of copper is 400 W/mK and the thermal conductivity of carbon nanotube is 6000 W/mK.

In addition, when 0.7% or more carbon nanotube is contained in the Fluorinert, the thermal conductivity thereof becomes higher than the thermal conductivity of solder (38 w/mK). In this case, even if a crack 21 is produced in the under-substrate solder 17, the filler 22 enters inside the crack 21, and the heat radiation is even improved. Since carbon nanotube has a diameter of not more than 1 nm and a length of not more than 10 nm, the fluidity of the filler 22 containing carbon nanotubes is high, and the filler 22 can enter in the crack 21 of a height of several tens of micrometers.

The filler 22 containing conductive fine particles 23 is not insulating. However, since the filler 22 covers only the lower conductor 13 and the under-substrate solder 17, and since the semiconductor element 14, the under-element solder 15 and the upper conductor 12 are covered with the silicone gel 20, the lower conductor 13, the semiconductor element 14 and the like are not short-circuited.

Third Embodiment

FIG. 4 is an enlarged sectional view of the chief part of the semiconductor device according to the third embodiment of the present invention. As FIG. 4 shows, a cured layer 24 is formed on the uppermost portion of the filler 22. The cured layer 24 can be formed by using a filler 22 that is cured by radiating ultraviolet beams or the like; or by applying a thin layer of a thermosetting resin (including silicone gel or the like) onto the surface of the filler 22, and conducting a heat treatment. Other constituents are the same as the first and second embodiments. Thereby, the third embodiment not only has similar advantages to the first and second embodiments, but also provides for consistent height of a filler and facilitates the injection of the silicone gel 20 that covers the semiconductor element 14, the under-element solder 15 and the upper conductor 12. Therefore, the quality and reliability of the semiconductor device can be improved.

Obviously many modifications and variations of the present invention are possible in the light of the above teachings. It is therefore to be understood that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.

The entire disclosure of a Japanese Patent Application No. 2006-184568, filed on Jul. 7, 2006 including specification, claims, drawings and summary, on which the Convention priority of the present application is based, are incorporated herein by reference in its entirety.

Claims

1. A semiconductor device comprising: an insulating substrate having an upper conductor formed on an upper surface and a lower conductor formed on a lower surface;a semiconductor element mounted on said insulating substrate with an under-element solder therebetween;a heat sink whereon said insulating substrate is mounted with an under-substrate solder therebetween;a silicone gel covering said semiconductor element, said under-element solder and said upper conductor; anda filler covering said lower conductor and said under-substrate solder, and having a thermal conductivity larger than the thermal conductivity of air and a fluidity higher than the fluidity of said silicone gel.

2. The semiconductor device according to claim 1, wherein said filler contains fine particles having a thermal conductivity higher than the thermal conductivity of said filler per se.

3. The semiconductor device according to claim 1, wherein said filler has a cured layer formed on the uppermost part thereof.