Semiconductor device

Abstract

A semiconductor device 10 includes a silicon substrate 20 having a first interconnection layer 24, a second interconnection layer 26, and grooves 22 provided at the second main surface 20b. Mounted on the substrate 20 are one or more semiconductor chips 30 having chip external terminals 32 electrically connected to the first interconnection layer; and one or more peripheral chips 40 electrically connected to the fist interconnection layer on the silicon substrate. By the provision of the grooves 22, the heart radiating property is improved.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be more apparent from the following description in connection with the drawings, in which:

FIG. 1A is a plan view of the semiconductor device of Embodiment 1 of the present invention;

FIG. 1B is a bottom view of the semiconductor device of Embodiment 1;

FIG. 2 is a schematic cross sectional view along line I-I′ in FIG. 1A.

FIG. 3A is a bottom view of the semiconductor device of Embodiment 2 of the present invention; and

FIG. 3B is a schematic cross sectional view along line II-II′ in FIG. 1A.

Claims

1. A semiconductor device comprising: a substrate having a first main surface,a second main surface opposite to the first main surface,a first insulating film provided on the first main surface,a first interconnection layer including a plurality of interconnection conductors extending over the first insulating film,a second insulating film provided on the second main surface,a second interconnection layer including a plurality of interconnection conductors extending over the second insulating film,through holes extending from the first main surface to the second main surface, and open at the first insulating film and the second insulating film,contacts filling the through holes and being electrically connected to the first interconnection layer and the second interconnection layer,a plurality of substrate external terminals electrically connected to the second interconnection layer, andat least one groove provided at the second main surface;one or more semiconductor chips each having a front surface, a rear surface opposite to the front surface, and chip external terminals provided on the rear surface and electrically connected to the first interconnection layer on the substrate; andone or more peripheral chips electrically connected to the first interconnection layer on the substrate.

2. The semiconductor device as set forth in claim 1, wherein the substrate is a silicon substrate.

3. The semiconductor device as set forth in claim 1, wherein two or more grooves are provided,the two or more grooves extend linearly, andone of the grooves extends in a first direction and the other of the grooves extends in a second direction perpendicular to the first direction.

4. The semiconductor device as set forth in claim 1, wherein a plurality of the grooves are provided, and the grooves have the same width and the same depth.

5. The semiconductor device as set forth in claim 1, wherein said at least one groove is provided in an area including an area directly under the area where the semiconductor chip is mounted.

6. The semiconductor device as set forth in claim 1, wherein said at least one groove extends perpendicular to the row of the substrate external terminals arranged linearly, and the width of said groove is narrower than the distance between the substrate external terminals in each of the rows of the substrate external terminals.

7. The semiconductor device as set forth in claim 1, wherein a plurality of the grooves are provided, and extend perpendicular to the row of the substrate external terminals arranged linearly, and extend through the respective spaces between adjacent ones of the substrate external terminals in each of the rows of the substrate external terminals, andthe width of each groove is narrower than the distance between the substrate external terminals in each of the rows of the substrate external terminals.

8. The semiconductor device as set forth in claim 1, wherein the depth of the groove is not more than one third of the thickness of the substrate.

9. The semiconductor device as set forth in claim 1, wherein the peripheral chips include an element selected from a group of elements consisting of a capacitor element, a resistive element, and an inductor element.

10. The semiconductor device as set forth in claim 1, further comprising a heat radiating member covering the second main surface and the inner surface of the groove.

11. The semiconductor device as set forth in claim 10, wherein said heat radiating member is a sheet member.

12. The semiconductor device as set forth in claim 10, wherein the heat radiating member is a heat radiating layer formed by applying a liquid material, and drying to form a coated film.