Claims
- 1. A semiconductor power integrated circuit, comprising;a) a semiconductor structure having a trench with a predetermined depth from a surface of the semiconductor structure, wherein the semiconductor structure includes an active region having a well region for forming a channel and a source, and a drift region for forming a drain region; b) a trench isolation layer pattern including a first oxide layer and a second oxide layer, wherein the first oxide layer fills inside the trench and has a predetermined thickness from the surface of the semiconductor structure, and wherein the second oxide layer is formed on the first oxide layer and has a predetermined thickness smaller than the second oxide layer; c) a field oxide layer pattern including a third oxide layer and a fourth oxide layer, wherein the third oxide layer is simultaneously formed with the same layer as the first oxide layer of the field oxide layer pattern and has a predetermined thickness from a surface of the semiconductor structure, and wherein the fourth oxide layer is simultaneously formed with the same layer as the second oxide layer of the field oxide layer of the field oxide layer pattern and has a thickness smaller than the third oxide layer; and d) a gate oxide layer pattern including a fifth oxide layer and a sixth oxide layer, wherein the fifth oxide layer is simultaneously formed with the same layer as the first oxide layer of the field oxide layer pattern and has a predetermined thickness from a surface of the semiconductor structure, and wherein the sixth oxide layer is simultaneously formed with the same layer as the second oxide layer of the field oxide layer of the field oxide layer pattern and has a thickness smaller than the third oxide layer.
- 2. The semiconductor power integrated circuit as recited in claim 1, wherein the first and second layers are TEOS-oxide layers.
- 3. The semiconductor power integrated circuit as recited in claim 2, wherein the predetermined thickness of the first oxide layer is of 8000 Å to 15000 Å and the predetermined thickness of the second oxide layer is of 2000 Å to 5000 Å.
- 4. The semiconductor power integrated circuit as recited in claim 3, wherein the semiconductor power device further comprises:a semiconductor substrate of a first conductivity type; a buried insulating layer formed on the semiconductor substrate of the first conductivity type; and an epitaxial layer of a second conductivity type formed on the buried insulating layer.
- 5. The semiconductor power integrated circuit as recited in claim 4, wherein the predetermined depth of the trench reaches to the epitaxial layer.
- 6. The semiconductor power integrated circuit as recited in claim 5, wherein the semiconductor power integrated circuit further comprises:a thermal oxide layer entirely formed on the semiconductor structure of the first conductivity type; a source region of the second conductivity type formed on the first region of the first conductivity type; a drain region of the second conductivity type formed on the second region of the second conductivity type; and a source region of the first conductivity type on the first well region of the first conductivity type.
Priority Claims (1)
Number |
Date |
Country |
Kind |
98-45269 |
Oct 1998 |
KR |
|
Parent Case Info
This is a divisional application of Ser. No. 09/428,403 filed Oct. 28, 1999, now U.S. Pat. No. 6,284,605.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
63-131542 |
Jun 1988 |
JP |
Non-Patent Literature Citations (2)
Entry |
Boron Out Diffusion From Is Substrates in Various Ambients by K. Suzuki pp. 1095-1097, 1978. |
Tapered Windows in Phosphorous-Doped SiO2 by Ion Implantation by J. North pp. 809-812, 1996. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/428403 |
Oct 1999 |
US |
Child |
09/865004 |
|
US |