Semiconductor processing methods, and methods of forming a dynamic random access memory (DRAM) storage capacitor

Abstract

Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is mechanically scrubbed to remove an undesired material prior to forming a final passivation layer over an oppositely facing semiconductor wafer frontside. In another implementation, the wafer backside is treated to remove the undesired material while treatment of the wafer frontside is restricted. In another implementation, the mechanical scrubbing of the wafer backside is conducted in connection with a polishing solution which is effective to facilitate removal of undesired material from the wafer backside. In a preferred implementation, dynamic random access memory storage capacitors are formed and the undesired material constitutes remnant polysilicon which adheres to the wafer backside during formation of a frontside capacitor storage node. In accordance with this implementation, the wafer backside is mechanically scrubbed prior to formation of a storage capacitor dielectric layer, with such mechanical scrubbing taking place in connection with a polishing solution comprising tetramethyl ammonium hydroxide (TMAH) having a desired concentration.

Description

TECHNICAL FIELD

[0001] This invention relates to semiconductor processing methods, and more particularly it concerns removing undesired material from a semiconductor wafer backside to reduce a risk of inadvertent contamination. The invention also concerns methods of forming integrated circuitry, and in particular methods of forming dynamic random access memory storage capacitors.

BACKGROUND OF THE INVENTION

[0002] Semiconductor processing includes deposition of different materials over a semiconductor wafer. Such materials are typically deposited on a wafer which is placed within a reactor, such as a chemical vapor deposition reactor. During deposition, the material being deposited typically deposits over the entire wafer, including the wafer backside, and on the interior walls of the deposition reactor and the equipment used to support the wafer during processing. Material deposited on the wafer backside is problematic because it can become dislodged during downstream processing and contaminate the frontside of the wafer.

[0003] This invention arose out of concerns associated with improving the manner in which semiconductor wafers are processed. This invention also arose out of concerns associated with reducing the chances of inadvertent contamination during semiconductor wafer processing.

SUMMARY OF THE INVENTION

[0004] Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is mechanically scrubbed to remove an undesired material prior to forming a final passivation layer over an oppositely facing semiconductor wafer frontside. In another implementation, the wafer backside is treated to remove the undesired material while treatment of the wafer frontside is restricted. In another implementation, the mechanical scrubbing of the wafer backside is conducted in connection with a polishing solution which is effective to facilitate removal of undesired material from the wafer backside. In a preferred implementation, dynamic random access memory storage capacitors are formed and the undesired material constitutes remnant polysilicon which adheres to the wafer backside during formation of a frontside capacitor storage node. In accordance with this implementation, the wafer backside is mechanically scrubbed prior to formation of a storage capacitor dielectric layer, with such mechanical scrubbing taking place in connection with a polishing solution comprising tetramethyl ammonium hydroxide (TMAH) having a desired concentration.

BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Preferred embodiments of the invention are described below with reference to the following accompanying drawings.

[0006] FIG. 1 is a flow diagram illustrating certain methodical aspects of the present invention.

[0007] FIG. 2 is a diagrammatic sectional view of a semiconductor wafer fragment undergoing processing in accordance with the invention.

[0008] FIG. 3 is a view of the FIG. 2 wafer fragment at a processing step subsequent to that shown by FIG. 2.

[0009] FIG. 4 is a view of the FIG. 2 wafer fragment at a processing step subsequent to that shown by FIG. 3.

[0010] FIG. 5 is a view of the FIG. 2 wafer fragment at a processing step subsequent to that shown by FIG. 4.

[0011] FIG. 6 is a diagrammatic sectional view of a semiconductor wafer fragment undergoing processing in accordance with a preferred embodiment of the present invention.

[0012] FIG. 7 is a view of the FIG. 6 wafer fragment at a processing step subsequent to that shown by FIG. 6.

[0013] FIG. 8 is a view of the FIG. 6 wafer fragment at a processing step subsequent to that shown by FIG. 7.

[0014] FIG. 9 is a view of the FIG. 6 wafer fragment at a processing step subsequent to that shown by FIG. 8.

[0015] FIG. 10 is a view of the FIG. 6 wafer fragment at a processing step subsequent to that shown by FIG. 9.

[0016] FIG. 11 is a view of the FIG. 6 wafer fragment at a processing step subsequent to that shown by FIG. 10.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).

[0018] Referring to FIGS. 1-5, certain methodical aspects of the invention are set forth in a flow diagram (FIG. 1), and an exemplary illustrative implementation follows the flow diagram in FIGS. 2-5.

[0019] Referring to FIGS. 1 and 2, a fragmentary semiconductor wafer 10 (FIG. 2) is provided at step 110 (FIG. 1). Wafer 10 includes a wafer frontside 12 and a wafer backside 14. Wafer backside 14 faces generally oppositely away from wafer frontside 12.

[0020] Referring to FIGS. 1 and 3, wafer 10, and in particular wafer frontside 12 is subjected to processing conditions which cause an undesired material 18 to adhere or form on at least some of wafer backside 14. Such processing constitutes, at step 112, at least partially forming integrated circuitry 16 relative to wafer frontside 12.

[0021] Referring to FIGS. 1 and 4, and at step 114, wafer backside 14 is treated to remove at least some, and preferably all of the undesired material 18. In a preferred implementation, wafer backside 14 is treated while wafer frontside 12 is not appreciably treated. Accordingly, treatment of wafer frontside 12 is substantially restricted as will become apparent below. In accordance with one aspect of the invention, the treatment of wafer backside 14 comprises mechanically scrubbing the wafer backside. In accordance with another aspect of the invention, the treatment comprises chemically treating wafer backside 14 with a solution which is effective to facilitate removal of the undesired material. In another aspect, wafer backside 14 can be chemically treated prior to mechanically scrubbing the backside. In a most preferred aspect, the treatment of wafer backside 14 constitutes mechanically scrubbing the wafer backside and chemically treating the wafer backside in the same step or at the same time. Accordingly, in this aspect of the invention, the wafer backside is treated with a solution during the mechanical scrubbing thereof which also imparts a degree of removal by chemical means.

[0022] In one implementation, the undesired material 18 constitutes remnant polysilicon material which forms over backside 14 during semiconductor wafer processing. Typically, such is the case because of a desired frontside deposition of polysilicon. In accordance with one aspect of this implementation, the mechanical scrubbing of the wafer backside can comprise using an aqueous polishing solution having at least about 1% by weight tetramethyl ammonium hydroxide (TMAH) during the scrubbing. In accordance with another aspect of this implementation, the mechanical scrubbing comprises using a polishing solution having less than or equal to about 5% by weight TMAH. Alternately, the solution can comprise an aqueous solution of about 4% by weight TMAH.

[0023] According to yet another aspect of this implementation, the wafer backside 14 is treated with a solution having at least about 1% by weight TMAH prior to the mechanical scrubbing thereof. Accordingly, such a solution is effective to chemically etch the undesired polysilicon material. Exposure times for such solution can be more or less than about one minute depending on the strength of the polishing solution. For example, utilizing an aqueous solution of about 5% by weight TMAH for the backside scrub, an exposure time of about one minute should be adequate to effectuate removal of the remnant polysilicon. Of course, exposure times can vary. Additionally, other solutions can be utilized such as various HF-based solutions with exemplary solutions being utilized in connection with a hood, spin-etch, or scrub.

[0024] Referring to FIGS. 1 and 5, a final passivation layer 20 is formed, over wafer frontside 12 at step 116. Typically, such passivation layer is provided after a final metallization layer is patterned. Accordingly, such constitutes forming a final passivation layer over the wafer frontside after scrubbing (either mechanically, chemically, or both) the undesired material from wafer backside 14. After forming final passivation layer 20, the wafer backside 14 can again be mechanically scrubbed to remove any undesired material thereover.

[0025] The discussion now proceeds with respect to FIGS. 6-11 which illustrate a preferred implementation of the above-described invention.

[0026] Referring to FIG. 6, a fragmentary portion of a semiconductor wafer is indicated generally at 22 and includes a substrate 24. Fragment 22 includes a wafer frontside 26 and a wafer backside 28. Conductive lines 30, 32 are provided over substrate 24, as are source/drain diffusion regions 31, 33, all of which constitute portions of dynamic random access memory (DRAM) circuitry as will become apparent below.

[0027] Referring to FIG. 7, a layer 34 of insulative material is formed over wafer frontside 26. An exemplary material is borophosphosilicate glass (BPSG).

[0028] Referring to FIG. 8, a capacitor container opening 36 is etched into and through insulative layer 34 to expose diffusion region 31. A layer 38 of storage node material is formed over frontside 26 and within capacitor container opening 36. Exemplary materials for layer 38 include conductively doped polysilicon or so-called rugged-type polysilicon (hemispherical grain or cylindrical grain polysilicon). The storage node material less than fills the capacitor contact opening. A filler material 40 (i.e. photoresist) can be, and preferably is formed over at least portions of the wafer and to a degree which is sufficient to fill the remaining capacitor container opening 36 as shown. Such protects the capacitor container opening from debris which can be generated during subsequent processing. Formation of the above-described storage node material layer 38 also tends to cause remnant polysilicon material 38′ to be formed over the wafer backside 28. Such is undesirable, as subsequent processing can cause material 38′ to be removed and undesirably partially deposit on wafer frontside 26. This can possibly ruin the integrated circuitry formed thereover.

[0029] Referring to FIG. 9, filler material 40 and layer 38 are planarized relative to insulative layer 34 to isolate storage node material 42 within capacitor container opening 36 as shown. An exemplary planarization of such layers comprises a suitable chemical-mechanical polishing thereof. Such effectively provides a first capacitor plate of a DRAM storage capacitor. Storage node material 42 can be recessed within the capacitor container opening as shown, through a short wet recess step. An exemplary wet recess comprises submerging the wafer in a 1% by weight TMAH solution for about 5 minutes. Such a recess etch removes residual surface polysilicon left over from the aforementioned chemical mechanical process and provides assurance that any conductive material redeposited later atop layer 34 does not cause undesired shorting between storage nodes.

[0030] Referring to FIG. 10, semiconductor wafer backside 28 is subjected to conditions which are effective to remove at least some, and preferably all, of the undesirable material 38′ which may have adhered thereto during prior processing. Preferably, the removal of material 38′ takes place prior to forming a capacitor dielectric material over first capacitor plate 42. In accordance with a preferred aspect of the invention, treatment of the wafer frontside 26 is restricted during such processing so that only the backside 28 is meaningfully treated. After the FIG. 9 chemical-mechanical polishing which isolates storage node material 42, wafer backside 28 is mechanically scrubbed by a scrubber 44 to remove undesired storage node material 38′ which may have accumulated thereover. The scrubbing action of scrubber 44, which is most preferably rotational, effectively dislodges the undesired material, with gravity serving to allow such dislodged material to drop away from the wafer. In accordance with another preferred aspect of the invention, the mechanical scrubbing of wafer backside 28 is conducted in conjunction with a polishing solution (represented by dispenser 46) which comprises at least about 1% by weight TMAH. Even more preferably, the polishing solution has less than or equal to about 5% by weight TMAH. Greater concentrations are of course possible, such as about 10% or 20% by weight TMAH. Chemical treatment of the wafer backside 28 with TMAH can take place either prior to, during, or after the mechanical scrubbing thereof. Preferably such takes place before as well as during the mechanical scrubbing.

[0031] An exemplary and preferred processing apparatus for implementing the above-described scrubbing and treatment is available from DNS Electronics, Sunnyvale, Calif., as Dainippon Screen Cleaner, Model Number AS-2000. The preferred apparatus enables the wafer backside to be processed as described above, while substantially, if not completely, restricting frontside exposure to any of the backside polishing chemistry or processing contaminants mentioned above. The AS-2000 includes rotating backside brushes which, in conjunction with a rotating wafer and the preferred polishing solution, can effectively remove undesired material from the backside. The centrifugal force of the wafer in connection with the influence of gravity serve to direct debris downwardly and away from the wafer. Such constitutes an exemplary treatment or processing of the wafer in which the wafer frontside is not appreciably treated. Accordingly, treatment of the wafer frontside is restricted. Although the AS-2000 processing apparatus is preferred, other processing apparatuses can, of course, be used, e.g., an SSEC Evergreen 200 double-sided wafer cleaner, available from Solid State Equipment Corp., Fort Washington, Pa.

[0032] After treatment of the wafer backside as just described, frontside 26 can be scrubbed or otherwise treated with a 0.06% by weight TMAH treatment. Thereafter wafer 22 is subjected to further processing.

[0033] Referring to FIG. 11, and following removal of filler material 40 from capacitor container opening 36, a layer 48 of dielectric material is formed over storage node material 42. Subsequently, a cell plate layer or second capacitor plate 50 is formed over dielectric layer 48. Subsequent processing includes patterning and etching the cell plate and dielectric layers to define individual discrete DRAM storage capacitors. Subsequently, after bit line contact formation and other related processing, a final passivation layer 52 is formed over wafer frontside 26. Following formation of the final passivation layer, wafer backside 28 can be mechanically scrubbed again to ensure removal of any additional undesired material.

[0034] The above-described methodology enables potential contaminants to be removed from a wafer backside before formation of a final passivation layer. The effective isolated treatment of the wafer backside relative to the wafer frontside allows a stronger concentration of polishing solution to be used to remove the undesired material from the wafer backside. Additionally, the abrasive action of the backside scrubbing brushes reduces the wafer's exposure time to the stronger concentration of polishing solution because the combined effect of the backside brushes and the polishing solution removes the material faster than would otherwise be possible using only the polishing solution. This further reduces the chances of a frontside contamination. While the inventive methodology has been described, in the preferred embodiment, in the context of removing polysilicon from the wafer's backside, it is to be understood that such methodology is not to be so limited or construed.

[0035] In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.

Claims

1. A semiconductor processing method comprising mechanically scrubbing undesired material from a semiconductor wafer backside prior to forming a final passivation layer over an oppositely facing semiconductor wafer frontside.

2. The method of claim 1 further comprising treating the semiconductor wafer backside, while not appreciably treating the wafer frontside, with a solution effective to facilitate removal of the undesired material prior to the mechanical scrubbing of the wafer backside.

3. The method of claim 1 further comprising treating the semiconductor wafer backside, while not appreciably treating the wafer frontside, with a solution effective to facilitate removal of the undesired material during the mechanical scrubbing of the wafer backside.

4. The method of claim 1 further comprising treating the semiconductor wafer backside, while not appreciably treating the wafer frontside, with a solution effective to facilitate removal of the undesired material during the mechanical scrubbing of the wafer backside, the solution having at least about 1% by weight tetramethyl ammonium hydroxide.

5. The method of claim 1 further comprising treating the semiconductor wafer backside, while not appreciably treating the wafer frontside, with a solution effective to facilitate removal of the undesired material during the mechanical scrubbing of the wafer backside, the solution having less than or equal to about 5% by weight tetramethyl ammonium hydroxide.

6. The method of claim 1 further comprising: treating the semiconductor wafer backside, while not appreciably treating the wafer frontside, with a solution effective to facilitate removal of the undesired material during the mechanical scrubbing of the wafer backside, the solution comprising an aqueous solution of about 4% by weight tetramethyl ammonium hydroxide.

7. The method of claim 1 further comprising after forming the final passivation layer, mechanically scrubbing the wafer backside again.

8. The method of claim 1 further comprising: treating the semiconductor wafer backside, while not appreciably treating the wafer frontside, with a solution effective to facilitate removal of the undesired material during the mechanical scrubbing of the wafer backside, the undesired material comprising polysilicon; the solution comprising an aqueous solution of less than or equal 8 to about 5% by weight tetramethyl ammonium hydroxide; and the treating of the wafer backside with the solution taking place for a duration of not longer than about one minute.

9. A semiconductor processing method comprising: providing a semiconductor wafer having a frontside and a backside; subjecting at least the semiconductor wafer frontside to processing conditions which cause undesired material to adhere on at least some of the semiconductor wafer backside; treating the semiconductor wafer backside while restricting treatment of the wafer frontside to remove at least some of the undesired material; and after the treating of the semiconductor wafer backside, forming a final passivation layer over the semiconductor wafer frontside.

10. The method of claim 9, wherein the treating comprises mechanically scrubbing the semiconductor wafer backside.

11. The method of claim 9, wherein the treating comprises chemically treating the semiconductor wafer backside.

12. The method of claim 9, wherein the treating comprises chemically treating the semiconductor wafer backside with a HF-based solution.

13. The method of claim 9, wherein the treating comprises first chemically treating the semiconductor wafer backside, and after beginning said chemically treating, mechanically scrubbing the semiconductor wafer backside.

14. The method of claim 9, wherein the treating comprises mechanically scrubbing the semiconductor wafer backside and chemically treating the semiconductor wafer backside in the same step.

15. The method of claim 9, wherein: the subjecting of at least the semiconductor wafer frontside to processing conditions comprises forming a layer of polysilicon over at least a portion of the frontside; the undesired material comprises remnant polysilicon material from said layer of polysilicon; and the treating of the semiconductor wafer backside comprises mechanically scrubbing the backside using a solution of greater than or equal to about 1% by weight tetramethyl ammonium hydroxide.

16. A processing method of forming integrated circuitry comprising: providing a semiconductor wafer having a frontside for supporting integrated circuitry and a backside which faces generally oppositely away from the frontside; at least partially forming integrated circuitry relative to the semiconductor wafer frontside; mechanically scrubbing an undesired material from the semiconductor wafer backside; and after scrubbing of the undesired material, forming a final passivation layer over the semiconductor wafer frontside.

17. The method of claim 16 further comprising after forming the final passivation layer, mechanically scrubbing the wafer backside again.

18. The method of claim 16, wherein the mechanical scrubbing comprises using a polishing solution having at least about 1% by weight tetramethyl ammonium hydroxide during said scrubbing.

19. The method of claim 16, wherein the mechanical scrubbing comprises using a polishing solution having less than or equal to about 5% by weight tetramethyl ammonium hydroxide during said scrubbing.

20. The method of claim 16 further comprising treating the wafer backside with a solution having at least about 1% by weight tetramethyl ammonium hydroxide prior to said mechanically scrubbing.

21. The method of claim 16, wherein the undesired material comprises polysilicon, and said mechanical scrubbing comprises using a solution during scrubbing which also chemically etches said undesired material.

22. A method of forming a dynamic random access memory storage capacitor comprising forming a first capacitor plate by chemical mechanical polishing a polysilicon layer over a semiconductor wafer frontside, and thereafter mechanically scrubbing a wafer backside to remove remnant polysilicon material, the scrubbing taking place prior to forming a capacitor dielectric layer over the first capacitor plate.

23. The method of claim 22, wherein the mechanical scrubbing comprises using a polishing solution having at least about 1% by weight tetramethyl ammonium hydroxide during said scrubbing.

24. The method of claim 22, wherein the mechanical scrubbing comprises using a polishing solution having less than or equal to about 5% by weight tetramethyl ammonium hydroxide during said scrubbing.

25. A method of forming a dynamic random access memory (DRAM) storage capacitor comprising: providing a semiconductor wafer having a frontside and a backside; forming a layer of insulative material over the semiconductor wafer frontside; etching a capacitor container opening into the layer of insulative material; forming a layer of storage node material over the semiconductor wafer frontside and within the capacitor container opening; subjecting the semiconductor wafer backside while restricting the wafer frontside to conditions effective to remove at least some undesirable material which may have adhered thereto during prior processing; and after the subjecting, forming a layer of dielectric material over at least some of the storage node material within the capacitor container opening, and forming a cell plate layer over the dielectric material to provide a DRAM storage capacitor.

26. The method of claim 25, wherein the subjecting of the wafer backside comprises mechanically scrubbing the wafer backside.

27. The method of claim 25, wherein the subjecting of the wafer backside comprises chemically treating the wafer backside.

28. The method of claim 25, wherein the subjecting of the wafer backside comprises mechanically scrubbing the wafer backside and chemically treating the wafer backside at the same time.

29. The method of claim 25 further comprising after forming the layer of storage node material, planarizing said layer relative to the layer of insulative material.

30. The method of claim 25 wherein the forming of the storage so node material less than fills the capacitor container opening and further comprising: prior to subjecting the wafer backside to the processing conditions, forming a filler material over at least portions of the wafer and to a as degree sufficient to fill the remaining capacitor container opening; and planarizing the storage node material and the filler material relative to the layer of insulative material.

31. The method of claim 25 wherein the forming of the storage node material less than fills the capacitor container opening and further comprising: prior to subjecting the wafer backside to the processing conditions, forming a filler material over at least portions of the wafer and to a degree sufficient to fill the remaining capacitor container opening; planarizing the storage node material and the filler material relative to the layer of insulative material; and recessing the storage node material relative to the insulative material.

32. A method of forming a dynamic random access memory (DRAM) storage capacitor comprising: providing a semiconductor wafer have a frontside and a backside; forming an insulative layer over the frontside; etching a capacitor container opening into the insulative layer; forming storage node material over the frontside and within the capacitor container opening; chemical-mechanical polishing the storage node material to a degree sufficient to isolate storage node material within the capacitor container opening; after the chemical-mechanical polishing, mechanically scrubbing the wafer backside to remove undesired storage node material which may have adhered thereto; forming a dielectric material and cell plate layer operably adjacent the storage node material; forming a final passivation layer over the wafer frontside; and after forming the final passivation layer, mechanically scrubbing the wafer backside again.

33. The method of claim 32, wherein the first-mentioned mechanical scrubbing comprises using a polishing solution having at least about 1% by weight tetramethyl ammonium hydroxide during said scrubbing.

34. The method of claim 32, wherein the first-mentioned mechanical scrubbing comprises using a polishing solution having less than or equal to about 5% by weight tetramethyl ammonium hydroxide during said scrubbing.