Claims
- 1. A plasma treatment system for implantation, said system comprising:a chamber in which a plasma is generated in said chamber; a susceptor disposed in said chamber to support a substrate; and a shield disposed adjacent to said susceptor for blocking impurities that may possibly be introduced from a backside of said susceptor and reducing an amount of said impurities from said backside of said susceptor.
- 2. The system of claim 1 wherein said chamber comprises a plurality of substantially planar rf transparent windows on a surface of said chamber.
- 3. The system of claim 1 further comprising:an rf generator; and at least two rf sources, each external to said vacuum chamber and each said rf source electrically being connected to said rf generator and being juxtaposed to a respective one of said plurality rf transparent windows, and being operative to generate said plasma in the vacuum chamber; said rf sources being operative to produce a local, substantially uniform plasma proximate said substrate.
- 4. The system of claim 3 further comprising at least one tuning circuit, each said at least one tuning circuit electrically connected to one of said at least two rf sources.
- 5. The system of claim 1 wherein said shield is an annular structure disposed adjacent to said susceptor.
- 6. The system of claim 1 wherein said shield comprises a silicon bearing material.
- 7. The system of claim 1 wherein said substrate is a silicon wafer.
- 8. The system of claim 1 wherein said shield comprises an area to block impurities that may possibly be introduced from a backside of said susceptor.
- 9. A plasma treatment system for implantation, said system comprising:a chamber in which a plasma is generated in said chamber; a stainless steel bearing material susceptor disposed in said chamber to support a substrate; and a shield disposed adjacent to said susceptor for blocking impurities that may possibly be introduced from a backside of said susceptor and reducing an amount of said impurities from said backside of said susceptor, said shield comprising a stainless steel bearing material.
- 10. The system of claim 1 wherein said susceptor comprises an aluminum bearing material.
- 11. A plasma treatment system provided in a cluster tool for implantation, said system comprising:a chamber in which a plasma is generated in said chamber; a susceptor disposed in said chamber to support a substrate; and a shield disposed adjacent to said susceptor for blocking impurities that may possibly be introduced from a backside of said susceptor and reducing an amount of said impurities from said backside of said susceptor.
Parent Case Info
This application claims the benefit of U.S. Provisional Application No. 60/074,396, filed Feb. 11, 1998, the disclosure of which is incorporated by reference.
US Referenced Citations (3)
Provisional Applications (1)
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Number |
Date |
Country |
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60/074396 |
Feb 1998 |
US |