Field of the Disclosure
Embodiments of the present disclosure generally relate to a showerhead design having a reflector plate with a gas injection insert for radially distributing gas.
Description of the Related Art
Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing substrates includes depositing oxygen radicals on an upper surface of the substrate. For example, Applied Materials, Inc., of Santa Clara, Calif., offers a RadOx® process that heats the substrate with lamps and injects hydrogen and oxygen into a processing chamber. The gases form radicals when they strike the surface of the substrate to form a layer on the substrate, e.g., oxygen radicals form a silicon dioxide layer on a silicon substrate.
Current processing chamber showerheads used for radical oxygen deposition on 300 mm substrates have limited deposition control, resulting in poor processing uniformity. For example, low processing chamber pressure requirements for radial oxygen deposition and current showerhead designs result in gas reaching the substrate at a high velocity. The high velocity of the gas causes impingement on the substrate and prevents the gas from being adequately heated. On the other hand, oxygen radicals generated from combustion quickly recombine to create a short life cycle for the oxygen radicals. Therefore, the limited deposition control due to the high velocity of the gas combined with the short life cycle of oxygen radicals results in greater deposition at the center of the substrate, and poor deposition at the edges of the substrate.
Therefore, there is a need for an improved showerhead design that provides deposition control for more uniform deposition throughout the substrate, i.e., from the center to the edge.
In one embodiment, a shower head assembly is disclosed herein. The showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate has at least one gas injection port disposed therethrough. The gas injection insert is disposed in the reflector plate. The gas injection insert has a plurality of apertures. The gas injection insert includes a baffle plate. The baffle plate is disposed in the gas injection insert. The baffle plate has a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate. A second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.
In another embodiment a processing chamber is disclosed herein. The processing chamber includes a substrate support and a showerhead assembly. The substrate support is configured to rotate a substrate during processing. The showerhead assembly is disposed above the substrate support. The showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate has a first gas injection port a second gas injection port disposed therethrough. The gas injection insert is disposed in the reflector plate. The gas injection insert has a plurality of apertures. The gas injection insert includes at least two baffle plates radially disposed in the gas injection insert about a center of the reflector plate. Each baffle plate has a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate. A second plenum is formed between a second portion of the baffle plate and the reflector plate. The first plenum is separated from the second plenum by a wall of the reflector plate. The plurality of apertures of the gas injection insert and the baffle plate are not axially aligned.
In yet another embodiment, a showerhead assembly is disclosed herein. The showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate has a first injection port and a second gas injection port disposed therethrough to deliver gas to a first plenum and a second plenum. The gas injection insert is disposed in the reflector plate, below the first and second plenums. The gas injection insert includes a plurality of apertures. The number and size of the apertures is selected based on the flow rate of gas flowing through the first and second gas injection ports. The gas injection insert includes a baffle plate disposed in the gas injection insert. The baffle plate is exposed to the first and second plenums. The baffle plate is configured to reduce the flow of rate of gas flowing through the first and second plenums.
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
The processing chamber 100 includes a contactless or magnetically levitated substrate support 104 and a chamber body 102. The chamber body 102 has sidewalls 108, a bottom wall 110, and a top wall 112. The sidewalls 108, bottom wall 110, and top wall 112 define an interior volume 121. The top wall 112 includes a lid 116 having a showerhead assembly 127. The sidewalls 108 typically include at least one substrate access port 148. The substrate access port 148 facilitates entry and egress of a substrate 140. The processing chamber 100 may also include a radiant heat source 106 disposed in an inside diameter of the substrate support 104.
The substrate support 104 is adapted to magnetically levitate and rotate a substrate (not shown) within the interior volume 121. The substrate support 104 includes an annular body 199. The annular body 199 includes a magnetic ring section 130 and a substrate support section 132. The support section 132 extends from an upper surface of the magnetic ring section 130 to support a support ring 134. The support ring 134 facilities alignment and provides a seating surface for the substrate 140.
The processing chamber 100 also includes a window 114 made from a material transparent to heat and light of various wavelengths. The various wavelengths may include light in the infra-red (IR) spectrum, through which photons from a radiant heat source 106 may heat the substrate 140. The window 114 may also include a plurality of lift pins 144. The lift pins 144 are adapted to selectively contact and support the substrate 140 to facilitate transfer of the substrate 140 into and out of the processing chamber 100.
In one embodiment, the radiant heat source 106 includes a lamp assembly formed from a housing. The housing includes a plurality of honeycomb tubes 160 in a coolant assembly 161. The honeycomb tubes 160 are coupled to a coolant source 183.
An atmosphere control system 164 is also coupled to the interior volume 121 of the chamber body 102. The atmosphere control system 164 generally includes throttle valves and vacuum pumps for controlling chamber pressure.
The showerhead assembly 127 is configured to deliver one or more gases to the substrate 140. The showerhead assembly 127 includes a reflector plate 118 disposed below the lid 116. The reflector plate 118 faces the substrate support 104. The reflector plate 118 is configured to reflect IR light that is radiating off the substrate 140 back onto the substrate 140. A cooling plate 115 may optionally be disposed around and circumscribe the reflector plate 118 to cool the reflector plate 118.
In one embodiment, the showerhead assembly 127 includes at least a first gas injection port 138 and a second gas injection port 128 formed through the lid 116 and the reflector plate 118. An enlarged schematic view of the first gas injection port 138 and the second gas injection port 128 of the showerhead assembly 127 may be seen in
In one embodiment, the first gas injection port 138 (for providing gas to the first plenum 129) is located in the second quarter of the reflector plate 118. For example, the first gas injection port 138 is located between about 30 mm to about 40 mm from the center of the reflector plate 118. In one embodiment, the second gas injection port 128 (for providing gas to the second plenum 120) is located in the first quarter of the reflector plate 118. For example, the second gas injection port 128 is located between about 112 mm to about 122 mm from the center of the reflector plate 118. In one embodiment, the first and second gas injection ports 138, 128 each have a diameter of between about 1 mm and about 10 mm, for example, about 5 mm or about 5.1 mm.
In one embodiment, the first gas source 123 supplies oxygen gas (O2) and the second gas source 125 supplies hydrogen gas (H2). An oxygen and hydrogen gas mixture (O2/H2) is thus supplied to the first and second plenums 129, 120. In one embodiment, the gas mixture is between about 23 percent to about 43 percent hydrogen gas, and between about 57 percent to about 77 percent oxygen gas, for example, about 33 percent hydrogen gas and about 67 percent oxygen gas. The gas mixture flowing through the first plenum 129 forms an inner zone 171 in the showerhead assembly 127. The gas mixture flowing through the second plenum 120 forms an outer zone 172 in the showerhead assembly 127. The separate and distinct inner and outer zones 171, 172 in the showerhead assembly 127 advantageously allow the gas mixture to be controlled and tuned prior to being deposited on the substrate 140, depending on the processing requirements.
The reflector plate 118 also includes one or more gas injection inserts 124 disposed in the reflector plate 118.
In one embodiment, the number of apertures 117 in the baffle plate 122 is between about 20 and about 30 apertures 117, for example, about 24 or about 25 apertures 117. In one embodiment, the apertures 117 are formed in a single column in the baffle plate 122. In one embodiment, the radius of the apertures 117 is between about 0.25 mm and about 1.52 mm, for example, about 0.793 mm. In one embodiment, the number of apertures 126 in the gas injection insert 124 is greater than the number of apertures 117 in the baffle plate 122.
In one embodiment, the apertures 126 in the gas injection insert 124 are formed in two columns. Each column may have between about 40 and about 60 apertures, for example, about 40 apertures or about 50 apertures, i.e., about 100 apertures. Therefore, in one embodiment, there are about 100 apertures 126 (50 aperturesĂ—two columns). In one embodiment, the apertures 117 and the apertures 126 are offset to create a tortuous flow path through the showerhead assembly 127. In one embodiment, the radius of the apertures 126 is between about 0.25 mm and about 1.52 mm, for example, about 0.79 mm. In another embodiment, (i) the number and size of the apertures 126; (ii) the number of columns having the apertures 126; and (iii) the thickness of the gas injection insert 124 itself, may be selected based on the flow rate of the gas mixture flowing from the first and second plenums 129, 120 (i.e., the inner zone 171 and the outer zone 172) to the third plenum 131, and finally flowing radially towards the substrate 140.
Referring to
In one embodiment of operation, where deposition of the gas mixture may be higher at the center of the substrate 140 than the edges of the substrate 140, two separate volumetric flow rates of the gas mixture may be provided to the first and second gas injection ports 138, 128. For example, in one embodiment the overall gas mixture is provided at about 2 s/m or about 5 s/m through the showerhead assembly 127.
In one embodiment, the gas mixture flowing through the first plenum 129 has a slower flow rate than the gas mixture flowing through the second plenum 120 in order reduce the center-high deposition on the substrate 140. For example, the gas mixture is provided through the first gas injection port 138 and into the first plenum 129 at about 0.69 slm or about 1.71 slm (i.e., the inner zone 171). The gas mixture is then provided through the second gas injection port 128 and into the second plenum 120 at about 1.31 slm or about 3.29 slm (i.e., the outer zone 172). Because the first plenum 129 is disposed closer to the center of the substrate 140 that the second plenum 120, the first end 502 of the gas injection insert 500 (having the smaller aperture 126 size) is disposed below the first plenum 129 to account for the center-high deposition on the substrate 140. Conversely, because the second plenum 120 is disposed closer to the edge of the substrate 140 than the first plenum 129, the second end 504 of the gas injection insert 500 (having the larger aperture 126 size) is disposed below the second plenum 120. As such, the overall gas mixture flow rate through the showerhead assembly 127 can advantageously be individually controlled and tuned through the above disclosed inner and outer zones 171, 172 to create an even gas mixture flow rate between the center and the edges of the substrate 140 and therefore promote overall uniform deposition over the substrate 140.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
This application is a divisional of U.S. patent application Ser. No. 14/691,496, filed Apr. 20, 2015, which claims benefit of U.S. Provisional Application Ser. No. 61/994,584, filed May 16, 2014, which are hereby incorporated by reference in their entirety.
Number | Name | Date | Kind |
---|---|---|---|
5595606 | Fujikawa | Jan 1997 | A |
5871586 | Crawley | Feb 1999 | A |
5884009 | Okase | Mar 1999 | A |
5950925 | Fukunaga | Sep 1999 | A |
5992453 | Zimmer | Nov 1999 | A |
6059885 | Ohashi | May 2000 | A |
6086677 | Umotoy | Jul 2000 | A |
6089472 | Carter | Jul 2000 | A |
6121579 | Aoki | Sep 2000 | A |
6132512 | Horie | Oct 2000 | A |
6245192 | Dhindsa | Jun 2001 | B1 |
6302964 | Umotoy | Oct 2001 | B1 |
6364949 | Or | Apr 2002 | B1 |
6368987 | Kopacz | Apr 2002 | B1 |
6399484 | Yamasaki | Jun 2002 | B1 |
6415736 | Hao et al. | Jul 2002 | B1 |
6499425 | Sandhu | Dec 2002 | B1 |
6502530 | Turlot | Jan 2003 | B1 |
6946033 | Tsuei | Sep 2005 | B2 |
7449220 | Buechel | Nov 2008 | B2 |
7481886 | Kato | Jan 2009 | B2 |
7572337 | Rocha-Alvarez | Aug 2009 | B2 |
7622005 | Balasubramanian | Nov 2009 | B2 |
7661388 | Schmitt | Feb 2010 | B2 |
7708859 | Huang | May 2010 | B2 |
7965927 | Yokouchi | Jun 2011 | B2 |
8038835 | Hayashi | Oct 2011 | B2 |
8088248 | Larson | Jan 2012 | B2 |
8111978 | Sorabji | Feb 2012 | B2 |
8349083 | Takasuka | Jan 2013 | B2 |
8349403 | Takasuka | Jan 2013 | B2 |
8475625 | Pamarthy | Jul 2013 | B2 |
8628616 | Takasuka | Jan 2014 | B2 |
8771418 | Je | Jul 2014 | B2 |
8882913 | Byun | Nov 2014 | B2 |
8960235 | Carlson | Feb 2015 | B2 |
8986493 | Tahara | Mar 2015 | B2 |
9045828 | Turlot | Jun 2015 | B2 |
9057128 | Olgado | Jun 2015 | B2 |
9112088 | Niira | Aug 2015 | B2 |
9117635 | Satoh | Aug 2015 | B2 |
9121097 | Mohn | Sep 2015 | B2 |
9315897 | Byun | Apr 2016 | B2 |
9396909 | Carlson | Jul 2016 | B2 |
9399228 | Breiling | Jul 2016 | B2 |
9416450 | Nguyen | Aug 2016 | B2 |
9441295 | Rozenzon | Sep 2016 | B2 |
9441296 | Sabri | Sep 2016 | B2 |
9466468 | Okayama | Oct 2016 | B2 |
9587312 | Silva | Mar 2017 | B2 |
9714465 | Tsuei | Jul 2017 | B2 |
9758868 | Breiling | Sep 2017 | B1 |
10221483 | Shah et al. | Mar 2019 | B2 |
20010027026 | Dhindsa et al. | Oct 2001 | A1 |
20020017243 | Pyo | Feb 2002 | A1 |
20030019580 | Strang | Jan 2003 | A1 |
20040029379 | Yamasaki | Feb 2004 | A1 |
20040050326 | Thilderkvist | Mar 2004 | A1 |
20040050492 | Tsuei | Mar 2004 | A1 |
20040052969 | Lee | Mar 2004 | A1 |
20040134611 | Kato | Jul 2004 | A1 |
20040191413 | Park | Sep 2004 | A1 |
20040209487 | Choi | Oct 2004 | A1 |
20060174827 | Bae | Aug 2006 | A1 |
20080078746 | Masuda | Apr 2008 | A1 |
20080081114 | Johanson | Apr 2008 | A1 |
20080093341 | Turlot | Apr 2008 | A1 |
20080236495 | Tompa | Oct 2008 | A1 |
20090000743 | Iizuka | Jan 2009 | A1 |
20090095221 | Tam | Apr 2009 | A1 |
20090148704 | Takasuka | Jun 2009 | A1 |
20090155997 | Shinriki et al. | Jun 2009 | A1 |
20090169744 | Byun | Jul 2009 | A1 |
20090211707 | Chao | Aug 2009 | A1 |
20100008656 | Sorabji | Jan 2010 | A1 |
20100096367 | Jeon | Apr 2010 | A1 |
20100136216 | Tsuei | Jun 2010 | A1 |
20110048325 | Choi | Mar 2011 | A1 |
20110061810 | Ganguly | Mar 2011 | A1 |
20110061812 | Ganguly | Mar 2011 | A1 |
20110065276 | Ganguly | Mar 2011 | A1 |
20110253044 | Tam | Oct 2011 | A1 |
20110277690 | Rozenzon | Nov 2011 | A1 |
20120135145 | Je | May 2012 | A1 |
20130040414 | Niira | Feb 2013 | A1 |
20130108788 | Takasuka | May 2013 | A1 |
20130109159 | Carlson | May 2013 | A1 |
20140061324 | Mohn et al. | Mar 2014 | A1 |
20140179114 | van Schravendijk | Jun 2014 | A1 |
20140291286 | Okayama | Oct 2014 | A1 |
20150000594 | Byun | Jan 2015 | A1 |
20150122357 | Carlson | May 2015 | A1 |
20150155190 | Miller | Jun 2015 | A1 |
20150233016 | Brillhart | Aug 2015 | A1 |
20150329966 | Shah | Nov 2015 | A1 |
20150348755 | Han | Dec 2015 | A1 |
20160033070 | Brillhart | Feb 2016 | A1 |
20160068955 | Brillhart | Mar 2016 | A1 |
Number | Date | Country |
---|---|---|
101223631 | Jul 2008 | CN |
101276737 | Oct 2008 | CN |
101365823 | Feb 2009 | CN |
101849444 | Sep 2010 | CN |
103325652 | Sep 2013 | CN |
05175135 | Jul 1993 | JP |
100687010 | Feb 2007 | KR |
200710990 | Mar 2007 | TW |
I407507 | Mar 2007 | TW |
200927295 | Jul 2009 | TW |
201025481 | Jul 2010 | TW |
201203332 | Jan 2012 | TW |
201338024 | Sep 2013 | TW |
201414870 | Apr 2014 | TW |
Entry |
---|
PCT international search report of PCT/US2015/026687 dated Jun. 30, 2015. |
Taiwan Office Action for Application No. 104113077 dated Oct. 15, 2018. |
Chinese Office Action for Application No. 201580021593.2 dated Nov. 28, 2018. |
Taiwan Search Report for Application No. 108117010 dated Sep. 3, 2019. |
Number | Date | Country | |
---|---|---|---|
20190194810 A1 | Jun 2019 | US |
Number | Date | Country | |
---|---|---|---|
61994584 | May 2014 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 14691496 | Apr 2015 | US |
Child | 16292078 | US |