Semiconductor devices are used in a variety of electronic applications, such as, for example, personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers over a semiconductor substrate, and patterning the various material layers using lithography to form circuit components and elements thereon.
The semiconductor industry continues to improve the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.) by continual reductions in minimum feature size, which allow more components to be integrated into a given area. However, as the minimum features sizes are reduced, additional problems arise that should be addressed.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
According to various embodiments, CFETs include lower nanostructure field-effect transistors (nanostructure-FETs) and upper nanostructure-FETs. The lower nanostructure-FETs include channel regions formed of a first semiconductor material and the upper nanostructure-FETs include channel regions formed of a second semiconductor material. The first and second semiconductor materials are different, which allows the lower and upper nanostructure-FETs to have a different threshold voltages.
The CFETs include multiple vertically stacked nanostructure-FETs (e.g., nanowire FETs, nanosheet FETs, multi bridge channel (MBC) FETs, nanoribbon FETs, gate-all-around (GAA) FETs, or the like). For example, a CFET may include a lower nanostructure-FET of a first device type (e.g., n-type/p-type) and an upper nanostructure-FET of a second device type (e.g., p-type/n-type) that is opposite the first device type. Specifically, the CFET may include a lower PMOS transistor and an upper NMOS transistor, or the CFET may include a lower NMOS transistor and an upper PMOS transistor. Each of the nanostructure-FETs include semiconductor nanostructures 64S, 66S (including lower semiconductor nanostructures 64S and upper semiconductor nanostructures 66S), where the semiconductor nanostructures 64S, 66S act as channel regions for the nanostructure-FETs. The semiconductor nanostructures 64S, 66S may be nanosheets, nanowires, or the like. The lower semiconductor nanostructures 64S are for a lower nanostructure-FET and the upper semiconductor nanostructures 66S are for an upper nanostructure-FET. A channel isolation material (not explicitly illustrated in
Gate dielectrics 152 are along top surfaces, sidewalls, and bottom surfaces of the semiconductor nanostructures 64S, 66S. Gate electrodes 154 (including a lower gate electrode 154L and an upper gate electrode 154U) are over the gate dielectrics 152 and around the semiconductor nanostructures 64S, 66S. Source/drain regions 128 (including lower epitaxial source/drain regions 128L and upper epitaxial source/drain regions 128U) are disposed at opposing sides of the gate dielectrics 152 and the gate electrodes 154. Source/drain region(s) 128 may refer to a source or a drain, individually or collectively dependent upon the context. Isolation features may be formed to separate desired ones of the source/drain regions 128 and/or desired ones of the gate electrodes 154. For example, a lower gate electrode 154L may optionally be separated from an upper gate electrode 154U. Alternatively, a lower gate electrode 154L may be coupled to an upper gate electrode 154U. Further, the upper epitaxial source/drain regions 128U may be separated from lower epitaxial source/drain regions 128L by one or more dielectric layers (not explicitly illustrated in
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A multi-layer stack 52 is formed over the substrate 50. The multi-layer stack 52 includes alternating first semiconductor layers 54 (including lower first semiconductor layers 54L and upper first semiconductor layers 54U) and second semiconductor layers 56 (including lower second semiconductor layers 56L and upper second semiconductor layers 56U). Additionally, the multi-layer stack 52 includes a dummy semiconductor layer 58. The lower first semiconductor layers 54L and the lower second semiconductor layers 56L are disposed below the dummy semiconductor layer 58. The upper first semiconductor layers 54U and the upper second semiconductor layers 56U are disposed above the dummy semiconductor layer 58. As subsequently described in greater detail, various one of the first semiconductor layers 54 and the second semiconductor layers 56 will be removed/patterned to form channel regions of CFETs. Specifically, the lower second semiconductor layers 56L will be removed and the lower first semiconductor layers 54L will be patterned to form channel regions of the lower nanostructure-FETs of the CFETs, and the upper first semiconductor layers 54U will be removed and the upper second semiconductor layers 56U will be patterned to form channel regions of the upper nanostructure-FETs of the CFETs.
The multi-layer stack 52 is illustrated as including a specific number of the first semiconductor layers 54 and a specific number of the second semiconductor layers 56. It should be appreciated that the multi-layer stack 52 may include any number of the first semiconductor layers 54 and the second semiconductor layers 56. Each layer of the multi-layer stack 52 may be grown by a process such as vapor phase epitaxy (VPE) or molecular beam epitaxy (MBE), deposited by a process such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), or the like.
The first semiconductor layers 54 are formed of a first semiconductor material suitable for the first device type of the lower nanostructure-FETs. The second semiconductor layers 56 are formed of a second semiconductor material suitable for the second device type of the upper nanostructure-FETs. Acceptable semiconductor materials for n-type devices may include silicon, silicon carbide, or the like. Acceptable semiconductor materials for p-type devices may include germanium, silicon-germanium, or the like. When silicon-germanium is used for p-type devices, it may be silicon-germanium with a low germanium concentration, such as a germanium concentration in the range of 15% to 25%. The first and second semiconductor materials have a high etching selectivity to one another. As such, the second semiconductor layers 56 of the second semiconductor material may be removed without significantly removing the first semiconductor layers 54 of the first semiconductor material, thereby allowing the first semiconductor layers 54 to be patterned to form channel regions of the lower nanostructure-FETs. Similarly, the first semiconductor layers 54 of the first semiconductor material may be removed without significantly removing the second semiconductor layers 56 of the second semiconductor material, thereby allowing the second semiconductor layers 56 to be patterned to form channel regions of the upper nanostructure-FETs. The dummy semiconductor layer 58 is formed of a third semiconductor material having a high etching selectivity to each of the first and second semiconductor materials, such as silicon-germanium with a high germanium concentration, such as a germanium concentration in the range of 35% to 45%. As such, the dummy semiconductor layer 58 of the third semiconductor material may be removed without significantly removing the first semiconductor layers 54 or the second semiconductor layers 56 in subsequent processing.
In this embodiment, the first semiconductor material of the first semiconductor layers 54 is a semiconductor material for p-type devices, and the second semiconductor material of the second semiconductor layers 56 is a semiconductor material for n-type devices. Accordingly, the multi-layer stack 52 has a bottommost semiconductor layer suitable for n-type devices. In another embodiment (subsequently described for
Some layers of the multi-layer stack 52 may be thicker than other layers of the multi-layer stack 52. The thickness of the dummy semiconductor layer 58 may be different (e.g., greater or less) than the thickness of each of the first semiconductor layers 54 and the second semiconductor layers 56. Specifically, the dummy semiconductor layer 58 may have a large thickness, such as a greater thickness than each of the first semiconductor layers 54 and the second semiconductor layers 56. Forming the dummy semiconductor layer 58 to a large thickness allows the dummy semiconductor layer 58 to be more easily removed in subsequently processing.
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As subsequently described in greater detail, various one of the nanostructures 64, 66 will be removed to form channel regions of CFETs. Specifically, the lower semiconductor nanostructures 64S will act as channel regions for lower nanostructure-FETs of the CFETs. Additionally, the upper semiconductor nanostructures 66S will act as channel regions for upper nanostructure-FETs of the CFETs.
The first middle nanostructures 64M and the second middle nanostructures 66M are the nanostructures that are directly above/below (e.g., in contact with) the dummy nanostructures 68. Depending on the heights of subsequently formed source/drain regions, the first middle nanostructures 64M and the second middle nanostructures 66M may or may not adjoin any source/drain regions and may or may not act as functional channel regions for the CFETs. The dummy nanostructures 68 will be subsequently replaced with isolation structures. The isolation structures, the first middle nanostructures 64M, and the second middle nanostructures 66M may define boundaries of the lower nanostructure-FETs and the upper nanostructure-FETs.
The semiconductor fins 62, the nanostructures 64, 66, and the dummy nanostructures 68 may be patterned by any suitable method. For example, the semiconductor fins 62, the nanostructures 64, 66, and the dummy nanostructures 68 may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes. Generally, or double-patterning multi-patterning processes combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process. For example, in one embodiment, a sacrificial layer is formed over a substrate and patterned using a photolithography process. Spacers are formed alongside the patterned sacrificial layer using a self-aligned process. The sacrificial layer is then removed, and the remaining spacers may then be used to pattern the semiconductor fins 62, the nanostructures 64, 66, and the dummy nanostructures 68. In some embodiments, a mask (or other layer) may remain on the nanostructures 64, 66.
Although each of the semiconductor fins 62, the nanostructures 64, 66, and the dummy nanostructures 68 are illustrated as having a constant width throughout, in other embodiments, the semiconductor fins 62, the nanostructures 64, 66, and/or the dummy nanostructures 68 may have tapered sidewalls such that a width of each of the semiconductor fins 62, the nanostructures 64, 66, and/or the dummy nanostructures 68 continuously increases in a direction towards the substrate 50. In such embodiments, each of the nanostructures 64, 66 and the dummy nanostructures 68 may have a different width and be trapezoidal in shape.
Further, isolation regions 70 are formed over the substrate 50 and between adjacent semiconductor fins 62. The isolation regions 70 may include a liner and a fill material over the liner. Each of the liner and the fill material may include a dielectric material such as an oxide (e.g., silicon oxide), a nitride (e.g., silicon nitride), the like, or a combination thereof. The formation of the isolation regions 70 may include depositing the dielectric material(s), and performing a planarization process such as a chemical mechanical polish (CMP) process, a mechanical polishing process, or the like to remove excess portions of the dielectric material(s), such as portions over the nanostructures 64, 66. The deposition processes may include ALD, high-density plasma chemical vapor deposition (HDP-CVD), flowable chemical vapor deposition (FCVD), the like, or a combination thereof. In some embodiments, the isolation regions 70 include silicon oxide formed by an FCVD process, followed by an anneal process. Then, the dielectric material(s) are recessed to define the isolation regions 70. The dielectric material(s) maybe recessed such that upper portions of the semiconductor fins 62, the nanostructures 64, 66, and the dummy nanostructures 68 extend higher than the isolation regions 70.
The previously described process is just one example of how the semiconductor fins 62 and the nanostructures 64, 66 may be formed. In some embodiments, the semiconductor fins 62, the nanostructures 64, 66, and/or the dummy nanostructures 68 may be formed using a mask and an epitaxial growth process. For example, a dielectric layer can be formed over a top surface of the substrate 50, and trenches can be etched through the dielectric layer to expose the underlying substrate 50. Epitaxial structures can be epitaxially grown in the trenches, and the dielectric layer can be recessed such that the epitaxial structures protrude from the dielectric layer to form the semiconductor fins 62, the nanostructures 64, 66, and/or the dummy nanostructures 68. The epitaxial structures may comprise the previously described alternating semiconductor materials, such as the first semiconductor material, the second semiconductor material, and the third semiconductor material. In some embodiments where epitaxial structures are epitaxially grown, the epitaxially grown materials may be in situ doped during growth, which may obviate prior and/or subsequent implantations, although in situ and implantation doping may be used together.
Further, appropriate wells (not separately illustrated) may be formed in the nanostructures 64, 66 and/or the semiconductor fins 62. For example, an n-type impurity implant and/or a p-type impurity implant may be performed, or the semiconductor materials may be in situ doped during growth. The n-type impurities may be phosphorus, arsenic, antimony, or the like at a concentration in a range from 1017 atoms/cm3 to 1019 atoms/cm3. The p-type impurities may be boron, boron fluoride, indium, or the like at a concentration in a range from 1017 atoms/cm3 to 1019 atoms/cm3. The wells in the lower semiconductor nanostructures 64S have a conductivity type opposite from a conductivity type of lower epitaxial source/drain regions that will be subsequently formed adjacent the lower semiconductor nanostructures 64S. The wells in the upper semiconductor nanostructures 66S have a conductivity type opposite from a conductivity type of upper epitaxial source/drain regions that will be subsequently formed adjacent the upper semiconductor nanostructures 66S.
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Further, implants for lightly doped source/drain (LDD) regions (not separately illustrated) may be performed. The LDD implants may be performed before the gate spacers 90 are formed. Appropriate type impurities may be implanted into the nanostructures 64, 66 to a desired depth. The LDD regions may have a same conductivity type as a conductivity type of source/drain regions that will be subsequently formed adjacent the lower semiconductor nanostructures 64S and the upper semiconductor nanostructures 66S. Additionally, the LDD regions in the lower semiconductor nanostructures 64S may have a conductivity type opposite from a conductivity type of the LDD regions in the upper semiconductor nanostructures 66S. In some embodiments, the lower semiconductor nanostructures 64S have p-type LDD regions and the upper semiconductor nanostructures 66S have n-type LDD regions. In some embodiments, the lower semiconductor nanostructures 64S have n-type LDD regions and the upper semiconductor nanostructures 66S have p-type LDD regions. The n-type impurities may be the any of the n-type impurities previously discussed, and the p-type impurities may be the any of the p-type impurities previously discussed. The lightly doped source/drain regions may have a concentration of impurities in a range from 1017 atoms/cm3 to 1020 atoms/cm3. An anneal may be used to repair implant damage and to activate the implanted impurities. In some embodiments, the grown materials of the nanostructures 64, 66 may be in situ doped during growth, which may obviate the implantations, although in situ and implantation doping may be used together.
It is noted that the previous disclosure generally describes a process of forming spacers and LDD regions. Other processes and sequences may be used. For example, fewer or additional spacers may be utilized, different sequence of steps may be utilized, additional spacers may be formed and removed, and/or the like.
Source/drain recesses 94 are formed in the semiconductor fins 62, the nanostructures 64, 66, the dummy nanostructures 68, and the substrate 50. Epitaxial source/drain regions will be subsequently formed in the source/drain recesses 94. The source/drain recesses 94 may extend through the nanostructures 64, 66 and into the substrate 50. The semiconductor fins 62 may be etched such that bottom surfaces of the source/drain recesses 94 are disposed above, below, or level with the top surfaces of the isolation regions 70. In the illustrated example, the top surfaces of the isolation regions 70 are above the bottom surfaces of the source/drain recesses 94. The source/drain recesses 94 may be formed by etching the semiconductor fins 62, the nanostructures 64, 66, the dummy nanostructures 68, and the substrate 50 using anisotropic etching processes, such as RIE, NBE, or the like. The gate spacers 90 and the dummy gates 84 mask portions of the semiconductor fins 62, the nanostructures 64, 66, the dummy nanostructures 68, and the substrate 50 during the etching processes used to form the source/drain recesses 94. A single etch process or multiple etch processes may be used to etch each layer of the nanostructures 64, 66, the dummy nanostructures 68, and/or the semiconductor fins 62. Timed etch processes may be used to stop the etching of the source/drain recesses 94 after the source/drain recesses 94 reach a desired depth.
As subsequently described in greater detail, the lower dummy nanostructures 66D and the upper dummy nanostructures 64D will be replaced with dielectric structures, which are dummy structures. Specifically, and as subsequently described for
In this embodiment, the lower dummy nanostructures 66D are replaced with lower dielectric structures before the upper dummy nanostructures 64D are replaced with upper dielectric structures. Other processes may be utilized. In another embodiment (subsequently described for
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As subsequently described in greater detail, dummy spacers 104 (see
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As an example to form the inner spacers 118, an insulating material may be conformally formed in the sidewall recesses 116 and the source/drain recesses 94. The insulating material may be a carbon-containing dielectric material, such as silicon oxycarbonitride, silicon oxycarbide, silicon oxynitride, or the like. Other low-dielectric constant (low-k) materials having a k-value less than about 3.5 may be utilized. The insulating material of the inner spacers 118 has a high etching selectivity to the insulating material of the dielectric structures 110. The insulating material may be formed by a deposition process, such as ALD, CVD, or the like. The insulating material may then be etched. The etching of the insulating material may be anisotropic. For example, the etch process may be a dry etch such as a RIE, a NBE, or the like. The insulating material, when etched, has portions remaining in the sidewall recesses 116 (thus forming the inner spacers 118).
Although outer sidewalls of inner spacers 118 are illustrated as being flush with the sidewalls of the nanostructures 64, 66, the outer sidewalls of the inner spacers 118 may extend beyond or be recessed from the sidewalls of the nanostructures 64, 66. Thus, the inner spacers 118 may partially fill, completely fill, or overfill the sidewall recesses. Moreover, although the sidewalls of the inner spacers 118 are illustrated as being straight, those sidewalls may be concave or convex.
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The lower epitaxial source/drain regions 128L are in contact with the lower semiconductor nanostructures 64S and are not in contact with the upper semiconductor nanostructures 66S. In some embodiments, the lower epitaxial source/drain regions 128L exert stress in the respective channel regions of the lower semiconductor nanostructures 64S, thereby improving performance. The lower epitaxial source/drain regions 128L are formed in the source/drain recesses 94 such that each stack of the lower semiconductor nanostructures 64S is disposed between respective neighboring pairs of the lower epitaxial source/drain regions 128L. In some embodiments, the inner spacers 118 are used to separate the lower epitaxial source/drain regions 128L from the lower dielectric structures 110L, which will be replaced with gate structures in subsequent processes.
The lower epitaxial source/drain regions 128L are epitaxially grown in the lower portions of the source/drain recesses 94. For example, the lower epitaxial source/drain regions 128L may be grown laterally from exposed sidewalls of the lower semiconductor nanostructures 64S. During the epitaxy of the lower epitaxial source/drain regions 128L, the upper semiconductor nanostructures 66S may be masked to prevent undesired epitaxial growth on the upper semiconductor nanostructures 66S. After the lower epitaxial source/drain regions 128L are grown, the masks on the upper semiconductor nanostructures 66S may then be removed. The lower epitaxial source/drain regions 128L have a conductivity type that is suitable for the device type of the lower nanostructure-FETs. In some embodiments, the lower epitaxial source/drain regions 128L are n-type source/drain regions. For example, if the lower semiconductor nanostructures 64S are silicon, the lower epitaxial source/drain regions 128L may include materials exerting a tensile strain on the lower semiconductor nanostructures 64S, such as silicon, silicon carbide, phosphorous-doped silicon carbide, silicon phosphide, silicon arsenide, or the like. Other acceptable material for n-type source/drain regions may be utilized, such as a Group-IV semiconductor doped with a Group-III element. In some embodiments, the lower epitaxial source/drain regions 128L are p-type source/drain regions. For example, if the lower semiconductor nanostructures 64S are silicon-germanium, the lower epitaxial source/drain regions 128L may include materials exerting a compressive strain on the lower semiconductor nanostructures 64S, such as silicon-germanium, boron-doped silicon-germanium, boron-doped silicon, germanium, germanium tin, or the like. Other acceptable material for p-type source/drain regions may be utilized, such as a Group-IV semiconductor doped with a Group-V element. The lower epitaxial source/drain regions 128L may have surfaces raised from respective upper surfaces of the lower semiconductor nanostructures 64S and may have facets.
The lower epitaxial source/drain regions 128L may be implanted with dopants to form source/drain regions, similar to the process previously discussed for forming lightly-doped source/drain regions, followed by an anneal. The source/drain regions may have an impurity concentration in the range of 1019 atoms/cm3 and 1021 atoms/cm3. The n-type and/or p-type impurities for source/drain regions may be any of the impurities previously discussed. In some embodiments, the lower epitaxial source/drain regions 128L are in situ doped during growth.
As a result of the epitaxy processes used to form the lower epitaxial source/drain regions 128L, upper surfaces of the lower epitaxial source/drain regions 128L have facets which expand laterally outward beyond sidewalls of the nanostructures 64, 66. In some embodiments, adjacent lower epitaxial source/drain regions 128L remain separated after the epitaxy process is completed. In other embodiments, these facets cause adjacent lower epitaxial source/drain regions 128L of a same nanostructure-FET to merge.
The first ILD 134 is formed over the lower epitaxial source/drain regions 128L. The first ILD 134 may be formed of a dielectric material, which may be deposited by any suitable method, such as CVD, plasma-enhanced chemical vapor deposition (PECVD), or FCVD. Dielectric materials may include phospho-silicate glass (PSG), boro-silicate glass (BSG), boron-doped phospho-silicate glass (BPSG), undoped silicate glass (USG), or the like. Other dielectric materials formed by any acceptable process may be used.
The first CESL 132 may be formed between the first ILD 134 and the lower epitaxial source/drain regions 128L. The first CESL 132 may be formed of a dielectric material having a high etching selectivity to the dielectric material of the first ILD 134, such as silicon nitride, silicon oxide, silicon oxynitride, or the like, which may be formed by any suitable deposition process, such as CVD, ALD, or the like.
The first CESL 132 and/or the first ILD 134 may be formed by depositing a material for the first CESL 132 and depositing a material for the first ILD 134, followed by a planarization process and then an etch-back process. In some embodiments, the first ILD 134 is initially etched, leaving the first CESL 132 unetched. An anisotropic etching process is then performed to remove the portions of the first CESL 132 that are higher than the first ILD 134. After the recessing, the sidewalls of the upper semiconductor nanostructures 66S are exposed.
The upper epitaxial source/drain regions 128U are in contact with the upper semiconductor nanostructures 66S and are not in contact with the lower semiconductor nanostructures 64S. In some embodiments, the upper epitaxial source/drain regions 128U exert stress in the respective channel regions of the upper semiconductor nanostructures 66S, thereby improving performance. The upper epitaxial source/drain regions 128U are formed in the source/drain recesses 94 such that each stack of the upper semiconductor nanostructures 66S is disposed between respective neighboring pairs of the upper epitaxial source/drain regions 128U. In some embodiments, the inner spacers 118 are used to separate the upper epitaxial source/drain regions 128U from the upper dielectric structures 110U, which will be replaced with gate structures in subsequent processes.
The upper epitaxial source/drain regions 128U are epitaxially grown in the upper portions of the source/drain recesses 94. For example, the upper epitaxial source/drain regions 128U may be grown laterally from exposed sidewalls of the upper semiconductor nanostructures 66S. The upper epitaxial source/drain regions 128U have a conductivity type that is suitable for the device type of the upper nanostructure-FETs. The conductivity type of the upper epitaxial source/drain regions 128U may be opposite the conductivity type of the lower epitaxial source/drain regions 128L. Put another way, the upper epitaxial source/drain regions 128U may be oppositely doped from the lower epitaxial source/drain regions 128L. In some embodiments, the upper epitaxial source/drain regions 128U are n-type source/drain regions. For example, if the upper semiconductor nanostructures 66S are silicon, the upper epitaxial source/drain regions 128U may include materials exerting a tensile strain on the upper semiconductor nanostructures 66S, such as silicon, silicon carbide, phosphorous-doped silicon carbide, silicon phosphide, silicon arsenide, or the like. In some embodiments, the upper epitaxial source/drain regions 128U are p-type source/drain regions. For example, if the upper semiconductor nanostructures 66S are silicon-germanium, the upper epitaxial source/drain regions 128U may include materials exerting a compressive strain on the upper semiconductor nanostructures 66S, such as silicon-germanium, boron-doped silicon-germanium, boron-doped silicon, germanium, germanium tin, or the like. The upper epitaxial source/drain regions 128U may have surfaces raised from respective upper surfaces of the upper semiconductor nanostructures 66S and may have facets.
The upper epitaxial source/drain regions 128U may be implanted with dopants to form source/drain regions, similar to the process previously discussed for forming lightly-doped source/drain regions, followed by an anneal. The source/drain regions may have an impurity concentration in the range of 1019 atoms/cm3 and 1021 atoms/cm3. The n-type and/or p-type impurities for source/drain regions may be any of the impurities previously discussed. In some embodiments, the upper epitaxial source/drain regions 128U are in situ doped during growth.
As a result of the epitaxy processes used to form the upper epitaxial source/drain regions 128U, upper surfaces of the upper epitaxial source/drain regions 128U have facets which expand laterally outward beyond sidewalls of the nanostructures 64, 66. In some embodiments, adjacent upper epitaxial source/drain regions 128U remain separated after the epitaxy process is completed. In other embodiments, these facets cause adjacent upper epitaxial source/drain regions 128U of a same nanostructure-FET to merge.
In this embodiment, the inner spacers 118 adjacent the upper epitaxial source/drain regions 128U are formed of the same dielectric material as the inner spacers 118 adjacent the lower epitaxial source/drain regions 128L. Other acceptable spacers may be utilized. In another embodiment (subsequently described for
The second ILD 144 is deposited over the upper epitaxial source/drain regions 128U. The second ILD 144 may be formed of a dielectric material, which may be deposited by any suitable method, such as CVD, plasma-enhanced chemical vapor deposition (PECVD), or FCVD. Dielectric materials may include phospho-silicate glass (PSG), boro-silicate glass (BSG), boron-doped phospho-silicate glass (BPSG), undoped silicate glass (USG), or the like. Other dielectric materials formed by any acceptable process may be used.
The second CESL 142 may be formed between the second ILD 144 and the upper epitaxial source/drain regions 128U. The second CESL 142 may be formed of a dielectric material having a high etching selectivity to the dielectric material of the second ILD 144, such as, silicon nitride, silicon oxide, silicon oxynitride, or the like, which may be formed by any suitable deposition process, such as CVD, ALD, or the like.
The second CESL 142 and/or the second ILD 144 may be formed by depositing a material for the second CESL 142 and depositing a material for the second ILD 144, followed by a planarization process. A removal process is then performed to level the top surfaces of the second ILD 144 with the top surfaces of the gate spacers 90 and the masks 86 (if present) or the dummy gates 84. In some embodiments, a planarization process such as a chemical mechanical polish (CMP), an etch-back process, combinations thereof, or the like may be utilized. The planarization process may also remove the masks 86 on the dummy gates 84, and portions of the gate spacers 90 along sidewalls of the masks 86. After the planarization process, top surfaces of the second ILD 144, the gate spacers 90, and the masks 86 (if present) or the dummy gates 84 are substantially coplanar (within process variations). Accordingly, the top surfaces of the masks 86 (if present) or the dummy gates 84 are exposed through the second ILD 144. In the illustrated embodiment, the masks 86 remain after the removal process. In other embodiments, the masks 86 are removed such that the top surfaces of the dummy gates 84 are exposed through the second ILD 144.
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The remaining portions of the dielectric structures 110 are then removed to form openings 148B in regions between the first nanostructures 64 and the second nanostructures 66. The remaining portions of the dielectric structures 110 can be removed by any acceptable etch process that selectively etches the material of the dielectric structures 110 at a faster rate than the materials of the nanostructures 64, 66, the isolation structures 96, and the inner spacers 118. The etching may be isotropic. In some embodiments, the etching process etches the material of the dielectric structures 110 at least 50 times faster than the material of the first nanostructures 64, at least 50 times faster than the material of the second nanostructures 66, at least 50 times faster than the material of the isolation structures 96, and at least 10 times faster than the material of the inner spacers 118. In some embodiments, a trim process (not separately illustrated) is performed to decrease the thicknesses of the exposed portions of the first nanostructures 64 and the second nanostructures 66, thereby expanding the openings 148B between the first nanostructures 64 and the second nanostructures 66.
As previously noted, the dielectric structures 110 are dummy structures formed of a dielectric material that may be more easily removed than dummy structures formed of semiconductor material. The dielectric material of the dielectric structures 110 has a high etching selectivity to the semiconductor materials of the first nanostructures 64 and the second nanostructures 66. Accordingly, the dielectric structures 110 may be removed without significantly removing the first nanostructures 64 and the second nanostructures 66, even when the first nanostructures 64 and the second nanostructures 66 are formed of different semiconductor materials.
The dielectric structures 110 are formed of a dielectric material that has a high etching selectivity to other dielectric materials, such as the dielectric material(s) of the isolation structures 96, and the inner spacers 118. In some embodiments, the dielectric structures 110 are removed by an etching process, and the dielectric material(s) of the isolation structures 96 and the inner spacers 118 contain an element that causes those dielectric material(s) to be resistant to the etching process. The isolation structures 96 and the inner spacers 118 may be formed of the same dielectric material containing the same element, and the dielectric material of the dielectric structures 110 may be free of that element. For example, as noted above, the isolation structures 96 and the inner spacers 118 may each be formed of a carbon-containing dielectric material, and the dielectric structures 110 may be formed of a carbon-free dielectric material. The etching process may include a wet etch that selectively etches the carbon-free dielectric material at a faster rate than the carbon-containing dielectric material. In some embodiments, the isolation structures 96 and the inner spacers 118 are each formed of silicon oxycarbonitride; the dielectric structures 110 are formed of silicon nitride; and the dielectric structures 110 are removed to form the openings 148B between the first nanostructures 64 and the second nanostructures 66 by a wet etch with phosphoric acid (H3PO4). In some embodiments, the isolation structures 96 and the inner spacers 118 are each formed of silicon oxycarbonitride; the dielectric structures 110 are formed of silicon oxide; and the dielectric structures 110 are removed to form the openings 148B between the first nanostructures 64 and the second nanostructures 66 by a wet etch with dilute hydrofluoric acid. In some embodiments, the isolation structures 96 and the inner spacers 118 are each formed of silicon oxycarbonitride; the dielectric structures 110 are formed of aluminum oxide; and the dielectric structures 110 are removed to form the openings 148B between the first nanostructures 64 and the second nanostructures 66 by a wet etch with phosphoric acid (H3PO4) and a low-temperature sulfuric peroxide mixture (e.g., a mixture of sulfuric acid and hydrogen peroxide) at a temperature in the range of 70° C. to 100° C.). Other acceptable etching processes may be utilized to remove the dielectric structures 110. In various embodiments, the material of the dielectric structures 110 may be etched by a wet etch using dilute hydrofluoric acid, a dry etch using hydrofluoric acid and nitrogen trifluoride without plasma, or the like.
In some embodiments, the dielectric structures 110, the isolation structures 96, and the inner spacers 118 each contain a same element that causes them to be resistant to the etching process The dielectric material of the dielectric structures 110 have a lower concentration of that element than the dielectric material(s) of the isolation structures 96 and the inner spacers 118. For example, the dielectric structures 110 may have a low carbon concentration, such as a carbon concentration of less than about 6%. Similarly, the isolation structures 96 and the inner spacers 118 may have a high carbon concentration, such as a carbon concentration of greater than about 6%.
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The gate dielectrics 152 include one or more gate dielectric layer(s) disposed around the lower semiconductor nanostructures 64S, the upper semiconductor nanostructures 66S, and the isolation structures 96. Specifically, the gate dielectrics 152 are disposed on the top surfaces of the semiconductor fins 62; on the top surfaces, the sidewalls, and the bottom surfaces of the lower semiconductor nanostructures 64S and the upper semiconductor nanostructures 66S; on the sidewalls of the gate spacers 90; on the sidewalls of the isolation structures 96; and on the sidewalls of the inner spacers 118. The gate dielectrics 152 wrap around all (e.g., four) sides of the lower semiconductor nanostructures 64S and the upper semiconductor nanostructures 66S. The gate dielectrics 152 may be formed of an oxide such as silicon oxide or a metal oxide, a silicate such as a metal silicate, combinations thereof, multi-layers thereof, or the like. Additionally or alternatively, the gate dielectrics 152 may be formed of a high-k dielectric material (e.g., dielectric materials having a k-value greater than about 7.0), such as a metal oxide or a silicate of hafnium, aluminum, zirconium, lanthanum, manganese, barium, titanium, lead, and combinations thereof. The dielectric material(s) of the gate dielectrics 152 may be formed by molecular-beam deposition (MBD), ALD, PECVD, or the like. Although single-layered gate dielectrics 152 are illustrated, the gate dielectrics 152 may include any number of interfacial layers and any number of main layers. For example, the gate dielectrics 152 may include an interfacial layer and an overlying high-k dielectric layer.
The lower gate electrodes 154L include one or more gate electrode layer(s) disposed over the gate dielectrics 152 and around the lower semiconductor nanostructures 64S. The lower gate electrodes 154L are disposed in the lower portions of the recesses 148A between the gate spacers 90 and in the openings 148B between the first nanostructures 64. The lower gate electrodes 154L may be formed of a metal-containing material such as tungsten, titanium, titanium nitride, tantalum, tantalum nitride, tantalum carbide, aluminum, ruthenium, cobalt, combinations thereof, multi-layers thereof, or the like. Although single-layered gate electrodes are illustrated, the lower gate electrodes 154L may include any number of work function tuning layers, any number of barrier layers, any number of glue layers, and a fill material.
The lower gate electrodes 154L are formed of material(s) that are suitable for the device type of the lower nanostructure-FETs. For example, the lower gate electrodes 154L may include one or more work function tuning layer(s) formed of work function tuning metal(s) that are suitable for the device type of the lower nanostructure-FETs. In some embodiments, the lower gate electrodes 154L include an n-type work function tuning layer, which may be formed of an n-type work function tuning metal such as titanium aluminum, titanium aluminum carbide, tantalum aluminum, tantalum carbide, combinations thereof, or the like. In some embodiments, the lower gate electrodes 154L include a p-type work function tuning layer, which may be formed of a p-type work function tuning metal such as titanium nitride, tantalum nitride, combinations thereof, or the like. Additionally or alternatively, the lower gate electrodes 154L may include a dipole-inducing element that is suitable for the device type of the lower nanostructure-FETs. Acceptable dipole-inducing elements include lanthanum, aluminum, scandium, ruthenium, zirconium, erbium, magnesium, strontium, and combinations thereof.
The upper gate electrodes 154U include one or more gate electrode layer(s) disposed over the gate dielectrics 152 and around the upper semiconductor nanostructures 66S. The upper gate electrodes 154U are disposed in the upper portions of the recesses 148A between the gate spacers 90 and in the openings 148B between the upper semiconductor nanostructures 66S. The upper gate electrodes 154U may be formed of a metal-containing material such as tungsten, titanium, titanium nitride, tantalum, tantalum nitride, tantalum carbide, aluminum, ruthenium, cobalt, combinations thereof, multi-layers thereof, or the like. Although single-layered gate electrodes are illustrated, the upper gate electrodes 154U may include any number of work function tuning layers, any number of barrier layers, any number of glue layers, and a fill material.
The upper gate electrodes 154U are formed of material(s) that are suitable for the device type of the upper nanostructure-FETs. For example, the upper gate electrodes 154U may include one or more work function tuning layer(s) formed of work function tuning metal(s) that are suitable for the device type of the upper nanostructure-FETs. In some embodiments, the upper gate electrodes 154U include an n-type work function tuning layer, which may be formed of an n-type work function tuning metal such as titanium aluminum, titanium aluminum carbide, tantalum aluminum, tantalum carbide, combinations thereof, or the like. In some embodiments, the upper gate electrodes 154U include a p-type work function tuning layer, which may be formed of a p-type work function tuning metal such as titanium nitride, tantalum nitride, combinations thereof, or the like. The work function tuning metal(s) of the upper gate electrodes 154U may be different than the work function tuning metal(s) of the lower gate electrodes 154L. Additionally or alternatively, the upper gate electrodes 154U may include a dipole-inducing element that is suitable for the device type of the upper nanostructure-FETs. Acceptable dipole-inducing elements include lanthanum, aluminum, scandium, ruthenium, zirconium, erbium, magnesium, strontium, and combinations thereof. The dipole-inducing elements the upper gate electrodes 154U may be different than the dipole-inducing elements of the lower gate electrodes 154L.
In some embodiments, isolation layers (not separately illustrated) are formed between the lower gate electrodes 154L and the upper gate electrodes 154U. The isolation layers act as isolation features between the lower gate electrodes 154L and the upper gate electrodes 154U. The isolation layers may be formed of a dielectric material. Acceptable dielectric materials may include silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbonitride, combinations thereof, or the like, which may be formed by a deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like. Other dielectric materials formed by any acceptable process may be used. In embodiments where the isolation layers are formed, the isolation layers and the isolation structures 96 together isolate the upper gate electrodes 154U from the lower gate electrodes 154L. Accordingly, an upper nanostructure-FET may be isolated from a lower nanostructure-FET by a combination of an isolation structure 96 and an isolation layer. In some embodiments where the isolation layers are omitted, an upper nanostructure-FET may be coupled to a lower nanostructure-FET. When the isolation layers are omitted, the lower gate electrodes 154L may be physically and electrically coupled to the upper gate electrodes 154U.
As an example to form the gate structures, one or more gate dielectric layer(s) may be deposited in the recesses 148A between the gate spacers 90 and the openings 148B between the first nanostructures 64 and the second nanostructures 66. The gate dielectric layer(s) may also be deposited on the top surfaces of the second ILD 144 and the gate spacers 90. Subsequently, one or more lower gate electrode layer(s) may be deposited on the gate dielectric layer(s), and in the remaining portions of the recesses 148A between the gate spacers 90 and the openings 148B between the first nanostructures 64 and the second nanostructures 66. The lower gate electrode layer(s) may then be recessed. Any acceptable etch process, such as a dry etch, a wet etch, the like, or a combination thereof, may be performed to recess the lower gate electrode layer(s). The etching may be isotropic, such as an etch-back process that removes the lower gate electrode layer(s) from the upper portions of the recesses 148A between the gate spacers 90, such that the lower gate electrode layer(s) remain in the openings 148B between the first nanostructures 64. In embodiments where the isolation layers are formed, an isolation material is conformally formed on the lower gate electrode layer(s) and then recessed. Any acceptable etch process, such as a dry etch, a wet etch, the like, or a combination thereof, may be performed to recess the isolation material. Subsequently, one or more upper gate electrode layer(s) may be deposited on the isolation material (if present) or the lower gate electrode layer(s), and in the remaining portions of the recesses 148A between the gate spacers 90 and the openings 148B between the first nanostructures 64 and the second nanostructures 66. A removal process is performed to remove the excess portions of the upper gate electrode layer(s), which excess portions are over the top surfaces of the gate spacers 90 and the second ILD 144, such that the upper gate electrode layer(s) remain in the openings 148B between the second nanostructures 66. In some embodiments, a planarization process such as a chemical mechanical polish (CMP), an etch-back process, combinations thereof, or the like may be utilized. The gate dielectric layer(s), after the removal process, have portions remaining in the recesses 148A between the gate spacers 90 and the openings 148B between the first nanostructures 64 and the second nanostructures 66 (thus forming the gate dielectrics 152). The lower gate electrode layer(s), after the removal process, have portions left in the lower portions of the recesses 148A between the gate spacers 90 and in the openings 148B between the first nanostructures 64 (thus forming the lower gate electrodes 154L). The upper gate electrode layer(s), after the removal process, have portions left in the upper portions of the recesses 148A between the gate spacers 90 and in the openings 148B between the second nanostructures 66 (thus forming the upper gate electrodes 154U). When a planarization process is utilized, the top surfaces of the gate spacers 90, the second ILD 144, the gate dielectrics 152, and the upper gate electrodes 154U are coplanar (within process variations).
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Optionally, metal-semiconductor alloy regions 162 are formed at the interfaces between the source/drain regions 128 and the source/drain contacts 164. The metal-semiconductor alloy regions 162 can be silicide regions formed of a metal silicide (e.g., titanium silicide, cobalt silicide, nickel silicide, etc.), germanide regions formed of a metal germanide (e.g. titanium germanide, cobalt germanide, nickel germanide, etc.), silicon-germanide regions formed of both a metal silicide and a metal germanide, or the like. The metal-semiconductor alloy regions 162 can be formed before the material(s) of the source/drain contacts 164 by depositing a metal in the openings for the source/drain contacts 164 and then performing a thermal anneal process. The metal can be any metal capable of reacting with the semiconductor materials (e.g., silicon, silicon-germanium, germanium, etc.) of the source/drain regions 128 to form a low-resistance metal-semiconductor alloy, such as nickel, cobalt, titanium, tantalum, platinum, tungsten, other noble metals, other refractory metals, rare earth metals or their alloys. The metal can be deposited by a deposition process such as ALD, CVD, PVD, or the like. After the thermal anneal process, a cleaning process, such as a wet clean, may be performed to remove any residual metal from the openings for the source/drain contacts 164, such as from surfaces of the metal-semiconductor alloy regions 162. The material(s) of the source/drain contacts 164 can then be formed on the metal-semiconductor alloy regions 162.
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In some embodiments, an etch stop layer (ESL) 172 is formed between the third ILD 174 and the gate spacers 90, the second ILD 144, the upper gate electrodes 154U, and the source/drain contacts 164. The ESL 172 may include a dielectric material having a high etching selectivity to the dielectric material of the third ILD 174, such as, silicon nitride, silicon oxide, silicon oxynitride, or the like.
Gate contacts 176 and source/drain vias 178 are formed through the third ILD 174 to electrically couple to, respectively, the upper gate electrodes 154U and the source/drain contacts 164. As an example to form the gate contacts 176 and the source/drain vias 178, openings for the gate contacts 176 and the source/drain vias 178 are formed through the third ILD 174 and the ESL 172. The openings may be formed using acceptable photolithography and etching techniques. A liner (not separately illustrated), such as a diffusion barrier layer, an adhesion layer, or the like, and a conductive material are formed in the openings. The liner may include titanium, titanium nitride, tantalum, tantalum nitride, or the like. The conductive material may be cobalt, tungsten, copper, a copper alloy, silver, gold, aluminum, nickel, or the like. A planarization process, such as a CMP, may be performed to remove excess material from the top surface of the third ILD 174. The remaining liner and conductive material form the gate contacts 176 and the source/drain vias 178 in the openings. The gate contacts 176 and the source/drain vias 178 may be formed in distinct processes, or may be formed in the same process. Although shown as being formed in the same cross-section, it should be appreciated that each of the gate contacts 176 and the source/drain vias 178 may be formed in different cross-sections, which may avoid shorting of the contacts.
The active devices as illustrated are collectively referred to as a device layer. In some embodiments, contacts to the lower gate electrodes 154L and the lower source/drain regions 128L may be made through a backside of the device layer (e.g., a side opposite to the source/drain contacts 164).
Embodiments may achieve advantages. Forming the dielectric structures 110 between the first nanostructures 64 and the second nanostructures 66 increases a processing window for a gate replacement process. Specifically, the dielectric material of the dielectric structures 110 has a high etching selectivity to the semiconductor materials of the first nanostructures 64 and the second nanostructures 66. Accordingly, during the gate replacement process, the dielectric structures 110 may be removed without significantly removing the first nanostructures 64 and the second nanostructures 66. The lower semiconductor nanostructures 64S and the upper semiconductor nanostructures 66S may thus be formed of different semiconductor materials, which may be particularly advantageous when the lower semiconductor nanostructures 64S and the upper semiconductor nanostructures 66S are for different types of devices. For example, the lower nanostructure-FETs may have a different threshold voltage than the upper nanostructure-FETs. Additionally, forming the dielectric structures 110 of the dielectric material may improve the line width ratio of the inner spacers 118 and the gate electrodes 154.
In the previously described embodiments, the lower dielectric structures 110L are formed before the upper dielectric structures 110U. Other processes may be utilized. In subsequently described embodiments, the lower dielectric structures 110L are formed after the upper dielectric structures 110U.
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In an embodiment, a device includes: first semiconductor nanostructures including a first semiconductor material; second semiconductor nanostructures including a second semiconductor material, the second semiconductor material being different from the first semiconductor material, the second semiconductor nanostructures disposed above the first semiconductor nanostructures; a first gate structure around the first semiconductor nanostructures, the first gate structure including a first work function tuning metal; and a second gate structure around the second semiconductor nanostructures, the second gate structure including a second work function tuning metal, the second work function tuning metal being different from the first work function tuning metal, the second gate structure disposed above the first gate structure. In some embodiments of the device, the first semiconductor material is silicon-germanium, the second semiconductor material is silicon, the first work function tuning metal is a p-type work function tuning metal, and the second work function tuning metal is an n-type work function tuning metal. In some embodiments of the device, the first semiconductor material is silicon, the second semiconductor material is silicon-germanium, the first work function tuning metal is an n-type work function tuning metal, and the second work function tuning metal is a p-type work function tuning metal. In some embodiments, the device further includes: an isolation structure between the first semiconductor nanostructures and the second semiconductor nanostructures. In some embodiments, the device further includes: a first epitaxial source/drain region adjacent the first semiconductor nanostructures; a first inner spacer between the first epitaxial source/drain region and the first gate structure, the first inner spacer including a first dielectric material; a second epitaxial source/drain region adjacent the second semiconductor nanostructures; and a second inner spacer between the second epitaxial source/drain region and the second gate structure, the second inner spacer including a second dielectric material, the second dielectric material different from the first dielectric material. In some embodiments, the device further includes: a first epitaxial source/drain region adjacent the first semiconductor nanostructures; a first inner spacer between the first epitaxial source/drain region and the first gate structure; a second epitaxial source/drain region adjacent the second semiconductor nanostructures; and a second inner spacer between the second epitaxial source/drain region and the second gate structure, the first inner spacer and the second inner spacer including a same dielectric material.
In an embodiment, a device includes: lower semiconductor nanostructures including a first semiconductor material; a lower epitaxial source/drain region adjacent the lower semiconductor nanostructures, the lower epitaxial source/drain region having a first conductivity type; upper semiconductor nanostructures including a second semiconductor material, the second semiconductor material different from the first semiconductor material; and an upper epitaxial source/drain region adjacent the upper semiconductor nanostructures, the upper epitaxial source/drain region having a second conductivity type, the second conductivity type being opposite the first conductivity type. In some embodiments of the device, the first semiconductor material is silicon-germanium, the second semiconductor material is silicon, the lower epitaxial source/drain region is a p-type source/drain region, and the upper epitaxial source/drain region is an n-type source/drain region. In some embodiments of the device, the first semiconductor material is silicon, the second semiconductor material is silicon-germanium, the lower epitaxial source/drain region is an n-type source/drain region, and the upper epitaxial source/drain region is a p-type source/drain region. In some embodiments, the device further includes: an isolation structure between the lower semiconductor nanostructures and the upper semiconductor nanostructures; and an inter-layer dielectric between the lower epitaxial source/drain region and the upper epitaxial source/drain region.
In an embodiment, a method includes: forming lower semiconductor nanostructures, lower dummy nanostructures, upper semiconductor nanostructures, and upper dummy nanostructures, the lower semiconductor nanostructures and the upper dummy nanostructures formed of a first semiconductor material, the upper semiconductor nanostructures and the lower dummy nanostructures formed of a second semiconductor material; replacing the lower dummy nanostructures with lower dielectric structures, the lower dielectric structures formed of a first dielectric material; replacing the upper dummy nanostructures with upper dielectric structures, the upper dielectric structures formed of the first dielectric material; and removing the lower dielectric structures and the upper dielectric structures with an etching process that selectively etches the first dielectric material at a faster rate than the first semiconductor material and the second semiconductor material. In some embodiments of the method, removing the lower dielectric structures forms lower openings between the lower semiconductor nanostructures, removing the upper dielectric structures forms upper openings between the upper semiconductor nanostructures, and the method further includes: forming a lower gate structure in the lower openings between the lower semiconductor nanostructures; and forming an upper gate structure in the upper openings between the upper semiconductor nanostructures. In some embodiments of the method, the first semiconductor material is silicon-germanium and the second semiconductor material is silicon. In some embodiments of the method, the first semiconductor material is silicon and the second semiconductor material is silicon-germanium. In some embodiments of the method, the lower dummy nanostructures are replaced before the upper dummy nanostructures are replaced. In some embodiments of the method, the lower dummy nanostructures are replaced after the upper dummy nanostructures are replaced. In some embodiments, the method further includes: forming inner spacers adjacent the lower dielectric structures and the upper dielectric structures, the inner spacers formed of a second dielectric material. In some embodiments of the method, the first dielectric material is silicon nitride, the second dielectric material is silicon oxycarbonitride, and the etching process includes a wet etch with phosphoric acid. In some embodiments of the method, the first dielectric material is silicon oxide, the second dielectric material is silicon oxycarbonitride, and the etching process includes a wet etch with dilute hydrofluoric acid. In some embodiments of the method, the first dielectric material is aluminum oxide, the second dielectric material is silicon oxycarbonitride, and the etching process includes a wet etch with phosphoric acid and a sulfuric peroxide mixture.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.