Soderbarg, et al., J. Electrochem. Soc., vol. 141, No. 10, “Buried Cobalt Silicid Layers in Silicon Created by Wafer Bonding”, pp. 2829-2833, Oct. 1994. |
Leon, R.P. et al, “Structrue and thermal stability of Cu-In precipitates and their role in the semi-insulating behavior of InP:Cu”, Appl. Phys. Lett. Nov. 23, 1992, pp. 2545-2547. |
Wernersson, et al., “GaAs Metalorgaic Vapour Phase Epitaxial Overgrowth over nm-Sized Tunsten Wires”, J. Appl. Phys., vol. 34, (1995) pp. 4414-4416. (no month). |
Ljungberg, et al., “Buried Cobalt Silicide Layers in Silicon Created by Wafer Bonding”, J. Electrochem. Soc., vol. 141, No., Oct. 10, 1994, pp. 2829-2833. |
Warren, AC et al., Appl. Phys. Lett. vol. 57, No. 13, “Arsenic Precipitates and the Semi-Insulating Properties of GaAs Buffer Layers Grown by Low-Temperature Molecular Beam Epitaxy” (no date/month). |
Ho, V. et al., IEEE Transactions on Electron Devices, vol. ed. 29, No. 4, “Fabrication of Si MOSFET's Using Neutron-Irradiated Silicon-Insulating Substrate”, pp. 487-491, Apr. 1982. |
Hanes, Maurice H., “MICROX©-An All Silicon Technology for Monolithic Microwave Integrated Circuits,” IEEE, vol 14, No. 5, pp. 219-221, 1993. (no month). |
Wernerson, L.E., “Lateral current-constriction in vertical devices using openings buried lattices of metallic discs,” American Institute of Physics, pp. 2803-2805, Nov. 10, 1997. |
Karlin, Tord E., “Process Integration Issues for High-Perfomance Bipolar Technology,” KTH Royal Institute of Technology, (1997). (no month). |