Claims
- 1. A super hard, highly pure silicon nitride having a crystal orientation wherein the crystal face (h k l) in a hexagonal system is oriented in parallel to the substrate upon which the silicon nitride was deposited, a grain size of not more than 50 .mu.m and a micro Vickers hardness of more than 3,000 Kg/mm.sup.2 under a load of 100 g.
- 2. The super hard, highly pure silicon nitride of claim 1, wherein said silicon nitride has a primary cone, composed of fine grains having an average grain size of less than 1 .mu.m.
- 3. The super hard, highly pure silicon nitride of claim 1, in the form of a layer on said substrate.
- 4. The super hard, highly pure silicon nitride of claim 1, in bulk solid form wherein the silicon nitride deposited has been separated from said substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
51/2468 |
Jan 1976 |
JPX |
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Parent Case Info
This is a division of application Ser. No. 756,282 filed Jan. 3, 1977 now U.S. Pat. No. 4,118,539.
US Referenced Citations (2)
Non-Patent Literature Citations (2)
Entry |
Whitner, Western Elec. Co. Inc., Tech. Digest #11, Jul. 1968, pp. 5-6. |
Grieco, J. Electrochemical Soc.: Solid State Science, Jan. 1968, vol. 115, #5, pp. 525-531. |
Divisions (1)
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Number |
Date |
Country |
Parent |
756282 |
Jan 1977 |
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