Embodiments of the present invention relate to a support ring assembly to support a substrate in a process chamber.
In the processing of substrates, such as semiconductor wafers and displays, a substrate is placed in a process chamber and exposed to an energized gas to deposit or etch material on the substrate. A typical process chamber comprises process components that include an enclosure wall that encloses a process zone, a gas supply to provide a gas in the chamber, a gas energizer to energize the process gas to process the substrate, a substrate support, and a gas exhaust. The process chamber components can also comprise a process kit, which typically includes one or more parts that can assist in securing and protecting the substrate during processing, such as for example, substrate rings which are rings that are located about the periphery of the substrate, such as deposition rings, cover rings and shadow rings.
In physical vapor deposition (PVD) processes, a substrate ring comprising a deposition ring is provided about the periphery of the substrate. The deposition ring typically surrounds the substrate and has a lip or ledge that rests on the substrate support. The ring shields the sidewall surfaces and peripheral edge of the substrate support that would otherwise be exposed to the energized gas in the chamber, from deposition of process residues. Thus, the deposition ring reduces the accumulation of process residues on the support, which would eventually flake off and contaminate the substrate. The deposition ring can also reduce erosion of the support structure by the energized gas. Providing a deposition ring also lowers the frequency with which the support assembly requires cleaning, because deposition ring itself can be periodically removed from the chamber and cleaned, for example, with HF and HNO3, to remove process residues that accumulate on the ring during substrate process cycles.
However, certain processes, such as for example, tantalum PVD processes with their exposure to the energized gas in the chamber during processing, heats up the deposition ring. Typically, the deposition rings, such as for example aluminum oxide deposition rings do not exchange a sufficient amount of heat with their surroundings in the vacuum environment to lower the temperature of the rings to acceptable levels. Excessive heating of the deposition ring is detrimental, because thermal stresses between the deposition ring and process residues accumulated on the ring, result in the peeling or spalling of the process residues from the deposition ring, and resultant contamination of the substrate. Also, the hot deposition ring can create temperature gradients emanating from the periphery of the substrate, which change the temperature of the substrate or energized gas during processing. Yet another problem with conventional rings, such as aluminum oxide deposition rings, is that they erode during cleaning and refurbishment processes, reducing their lifetime. This is especially true when cleaning process residues that are chemically difficult to remove, such as for example, tantalum deposits formed on aluminum oxide rings.
Accordingly, it is desirable to have a substrate ring, such as a deposition ring, that does not excessively increase in temperature during the processing of substrates. It is furthermore desirable to have a substrate ring that is not excessively eroded during cleaning of the ring. It is furthermore desirable to have a substrate ring that can reduce the formation of excessively high temperature gradients during substrate processing.
In one version, a substrate ring assembly is provided for a substrate support having a peripheral edge. The assembly has an annular band having an inner perimeter that surrounds and at least partially covers the peripheral edge of the substrate support. The assembly also has a clamp to secure the annular band to the peripheral edge of the substrate support.
In another version, the substrate ring assembly has an annular band having an inner perimeter that at least partially surrounds and at least partially covers the peripheral edge of the substrate support. The annular band has at least one protrusion on a top surface of the annular band that is adapted to inhibit a flow of process gas over the top surface. A foot extends downwardly from the annular band, and is adapted to press against a surface of the substrate support.
In another version, the substrate ring assembly has an annular band having an inner perimeter that surrounds and at least partially covers a peripheral edge of the substrate support, and a foot extending downwardly from the annular band. The foot is shaped, sized and positioned to allow the band, when the band is held against the substrate support, to exert substantially a compressive stress on the substrate support.
These features, aspects and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, which illustrate examples of the invention. However, it is to be understood that each of the features can be used in the invention in general, not merely in the context of the particular drawings, and the invention includes any combination of these features, where:
a is a partial sectional side view of an embodiment of a substrate ring assembly having a clamped annular band;
b is a partial top view of an embodiment of a substrate support having the substrate ring assembly of
c is a partial sectional side view of an embodiment of the substrate ring assembly of
a is a partial sectional side view of an embodiment of a substrate ring assembly having a clamp comprising a radial spring;
b is a partial sectional side view of an embodiment of a substrate ring assembly having a clamp comprising an extended spring; and
An exemplary version of a substrate ring assembly 20 that can be used to cover or protect at least a portion of a substrate support 22 in a substrate processing environment, is shown in
In one version, the substrate ring assembly 20 comprises a clamp 34 that clamps a portion of the annular band 26 to the substrate support 22. Clamping of the annular band 26 to the support 22 provides improved processing results at least in part because better heat exchange can occur between the clamped band 26 and the support 22. Portions of the annular band 26 can become excessively heated during substrate processing, such as for example the top surface 36 of the annular band 26 that is exposed to energized plasma of process gas. Excessive heating of the top surface 36 can lead to a thermal expansion mismatch between the annular band 26 and any process residues deposited on the top surface 36 of the band 26, which can cause the process residues to flake away from the top surface 36 and potentially contaminate the substrate 104. Clamping of the annular band 26 to the support 22 also allows better heat exchange between the band 26 and the support 22, to improve the temperature control of the annular band 26. For example, the support 22 may be temperature controlled, for example, by providing a temperature controlled cooling plate 127 comprising cooling conduits 123 in the support 22, as shown for example in
One embodiment of a substrate ring assembly 20 comprising a clamp 34 is shown in
The fastener 40 comprises a structure suitable for passing through the opening 38 in the annular band 26 and connecting to the bracket 44, such as for example at least one of a screw, clip, spring or other connector structure. For example, in one version, the fastener 40 can comprise a threaded screw that fits through the opening 38 in the annular band 26 and at least partially through an opening 39 in the bracket 44, and where the opening 39 of the bracket 44 comprises complimentary threading that allows the bracket 44 to be tightened against the support 22 upon turning the screw. Also, a desired number of openings 38 and fasteners 40 can be provided to secure the annular band 26 to the support 22. For example, the support ring assembly 20 can comprise from about 3 to about 24 openings 38, such as about 8 openings 38, that are placed in a desired configuration about the annular band 26. In the version shown in
In yet another embodiment, the clamp 34 comprises a swiveling fastener 41 that is adapted to rotate the bracket 44 into a desired position to clamp the annular band 26 against the support 22, as shown for example in
In one version, the top surface 36 of the annular band comprises a textured surface that is adapted to reduce the deposition of process deposits on undesired areas of the support 22 and support assembly 20. The top surface 36 desirably comprises features 52 that are shaped, sized and positioned to reduce the deposition of process residues on at least a portion of the surface 36. For example, the top surface 36 may inhibit a flow or migration of process residues towards one or more openings 38 in the annular band at a periphery 50 of the annular band. The top surface 36 may collect process residues in depressions in the surface 36 and inhibit the migration of these residues towards the substrate 104 to reduce contamination of the substrate 104. In one version, the top surface 36 comprises at least one feature 52 comprising a protrusion 51 that is sized and shaped—as well as positioned on the top surface 36—to reduce the flow or migration of process residues towards the substrate. The protrusion 51 may comprise, for example, a raised ring or other feature 52 that may be formed on the surface 36. Textured features 52 on the surface 36 can also comprise, for example, one or more grooves 53 or other depressions in the surface 36. The grooves 53 extend below the top surface 36 and each comprise a rounded bottom apex, and the protrusion 51 and grooves 53 are concentric to the circumference of the annular band, as shown for example, in
In one embodiment, the ring assembly 20 comprises a foot 54 that extends downwardly from the annular band 26 to press against the substrate support 22. The foot 54 is desirably shaped and sized to press against the substrate support 20 substantially without inducing cracks or fractures in the support 20, and thus provides an improved structure for bracing the band 26 against the support. For example, as shown in
The annular band 26 desirably also comprises recessed surface regions 60 about the downwardly extending foot 54 that substantially do not contact the peripheral edge 30 of the support 22, to reduce the stress of the band 26 on the peripheral edge 30 of the support 22. For example, one or more of the recessed regions 60 may be about a top corner 58a of the peripheral edge 30, to reduce the amount of stress exerted on the top corner 58a. Other parts of the substrate ring assembly 20 may also be adapted to reduce the amount of pressure and/or stress exerted on the peripheral edge 30 of the support 22. For example, the bracket 44 may comprise a raised lip 62 that presses against the peripheral edge 30 with substantially only a compressive force, and an adjacent recess 64 about a bottom corner 58b of the peripheral edge to reduce pressure on the bottom corner 58b. The bracket 44 and annular band foot 54 may also be complementarily positioned such that the clamping force of one against the peripheral edge 30 is at least partially counteracted by the other. For example, the bracket 44 may press against the peripheral edge 30 substantially directly below where the foot 54 presses, so the force on the peripheral edge 30 is substantially equal above and below the peripheral edge 30. Thus, the substrate ring assembly 20 is adapted to reduce cracking or fracturing of the substrate support 22 by exerting substantially only a vertical, compressive stress on the peripheral edge 30 of the support, and substantially without pressing against portions of the support 22 that are readily cracked or chipped, such as corners 58a,b of the peripheral edge 30.
In one version, the substrate ring assembly 20 comprises a cover ring 70 that at least partially surrounds and at least partially covers a periphery 50 of the annular band 26, as shown for example in
In yet another version, the substrate ring assembly 20 comprises a clamp 34 having a spring 80a,b to hold the annular band 26 against the substrate support 22, as shown for example in
The clamp 34 can also comprise a ball bearing 88 at one or more ends 89a,b of the radial spring 80a,b to exert a compressional force to secure the annular band 26. For example, the ball bearing may be at a first end 89a of the spring 80a that contacts the annular band 26, to increase the clamp surface area that contacts the band 26. The ball bearing 88 can also ease removal of the annular band 26, for example to allow cleaning of the band 26, by allowing the band to “roll” off of the support 22 when a steady force is exerted upwardly on the band 26. A second end 89b of the radial spring 80a may comprise a compression plate 92 having a surface area that is adapted to press against the peripheral edge 30 of the support 22, to provide a greater surface area for the compression clamping. The annular band 26 may also comprise a raised ridge 90 or bump on the interior surface 82 that is positioned below the radial spring 80a when the annular band 26 is secured on the support 22. The raised ridge 90 increases the force required to move the band 26 upwardly by increasing the spring contraction distance that is necessary to roll the ball-bearing over the ridge 90. Thus, the raised ridge 90 and radial spring clamp 34 secure the annular band 26 to the support 22 during processing, while also allowing for efficient removal of the band 26 by applying a sufficient lift-off pressure.
In yet another version; the clamp 34 comprises a spring 80b that is adapted to be extended between the annular band 26 and a portion of the support 22 to hold the band 26 on the support 22, as shown for example in
In one version, the second end 94b of the spring 80b is attached by means that substantially fixes the second end 94b to the support 22, for example by wrapping the second end 94b about an attachment rod 97 on the support 22, and the first end 94a is detachably secured to the band 26, as shown in
An example of a suitable process chamber 106 having the substrate ring assembly with the annular band 26 on the support 22 is shown in
The chamber 106 comprises a substrate support 22 to support the substrate 104 in the sputter deposition chamber 106. The substrate support 22 may be electrically floating or may comprise an electrode 170 that is biased by a power supply 172, such as an RF power supply. The substrate support 22 can also comprise a moveable shutter disk 133 that can protect the upper surface 134 of the support 22 when the substrate 104 is not present. In operation, the substrate 104 is introduced into the chamber 106 through a substrate loading inlet (not shown) in a sidewall 164 of the chamber 106 and placed on the support 22. The support 22 can be lifted or lowered by support lift bellows and a lift finger assembly (not shown) can be used to lift and lower the substrate onto the support 22 during transport of the substrate 104 into and out of the chamber 106.
The chamber 106 can further comprise a temperature control system 119 to control one or more temperatures in the chamber 106, such as a temperature of the support 22. In one version, the temperature control system 119 comprises a fluid supply adapted to provide heat exchange fluid to the support 22 from a fluid source 121. One or more conduits 123 deliver the heat exchange fluid from the fluid source 121 to the support 22. The support 22 can comprise one or more channels 125 therein, such as for example channels 125 in a metal cooling plate 127, through which the heat exchange fluid is flowed to exchange heat with the support 22 and control the temperature of the support 22, for example by heating or cooling the support 22. A suitable heat exchange fluid may be, for example, water. Controlling the temperature of the support 22 can also provide good temperature of elements that are in good thermal contact with the support 22, such as for example a substrate 104 on the surface 134 of the support 22, and also a clamped portion of a substrate ring assembly 20.
The support 22 may also comprise the substrate ring assembly 20 comprising one or more rings, such as the cover ring 70 and the annular band 26, which may be called a deposition ring, and which cover at least a portion of the upper surface 134 of the support 22, and such as a portion of the peripheral edge 30 of the support 22, to inhibit erosion of the support 22. The annular band 26 at least partially surrounds the substrate 104 to protect portions of the support 22 not covered by the substrate 104. The cover ring 70 encircles and covers at least a portion of the annular band 26, and reduces the deposition of particles onto both the annular band 26 and the underlying support 22. The substrate ring assembly 20 further comprises a clamp 34 to clamp the annular band 26 onto the substrate support 22.
A process gas, such as a sputtering gas, is introduced into the chamber 106 through a gas delivery system 112 that includes a process gas supply comprising one or more gas sources 174 that each feed a conduit 176 having a gas flow control valve 178, such as a mass flow controller, to pass a set flow rate of the gas therethrough. The conduits 176 can feed the gases to a mixing manifold (not shown) in which the gases are mixed to from a desired process gas composition. The mixing manifold feeds a gas distributor 180 having one or more gas outlets 182 in the chamber 106. The process gas may comprise a non-reactive gas, such as argon or xenon, which is capable of energetically impinging upon and sputtering material from a target. The process gas may also comprise a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, that are capable of reacting with the sputtered material to form a layer on the substrate 104. Spent process gas and byproducts are exhausted from the chamber 106 through an exhaust 122 which includes one or more exhaust ports 184 that receive spent process gas and pass the spent gas to an exhaust conduit 186 in which there is a throttle valve 188 to control the pressure of the gas in the chamber 106. The exhaust conduit 186 feeds one or more exhaust pumps 190. Typically, the pressure of the sputtering gas in the chamber 106 is set to sub-atmospheric levels.
The sputtering chamber 106 further comprises a sputtering target 124 facing a surface 105 of the substrate 104, and comprising material to be sputtered onto the substrate 104, such as for example at least one of tantalum and tantalum nitride. The target 124 is electrically isolated from the chamber 106 by an annular insulator ring 132, and is connected to a power supply 192. The sputtering chamber 106 also has a shield 120 to protect a wall 118 of the chamber 106 from sputtered material. The shield 120 can comprise a wall-like cylindrical shape having upper and lower shield sections 120a, 120b that shield the upper and lower regions of the chamber 106. In the version shown in
The chamber 106 can be controlled by a controller 194 that comprises program code having instruction sets to operate components of the chamber 106 to process substrates 104 in the chamber 106. For example, the controller 194 can comprise a substrate positioning instruction set to operate one or more of the substrate support 22 and substrate transport to position a substrate 104 in the chamber 106; a gas flow control instruction set to operate the flow control valves 178 to set a flow of sputtering gas to the chamber 106; a gas pressure control instruction set to operate the exhaust throttle valve 188 to maintain a pressure in the chamber 106; a gas energizer control instruction set to operate the gas energizer 116 to set a gas energizing power level; a temperature control instruction set to control a temperature control system 119 to control temperatures in the chamber 106; and a process monitoring instruction set to monitor the process in the chamber 106.
The present invention has been described with reference to certain preferred versions thereof; however, other versions are possible. For example, the substrate ring assembly 20 comprising the clamp 34 and annular band 26 can be used in other types of applications, as would be apparent to one of ordinary skill, for example, etching, CVD and cleaning processed. Other configurations of the substrate ring assembly 20 and clamp 34 can also be used. For example, other methods and configurations for clamping and annular band 26 to a support 22 can be provided. Therefore, the spirit and scope of the appended claims should not be limited to the description of the preferred versions contained herein.
Number | Name | Date | Kind |
---|---|---|---|
3482082 | lsreeli | Dec 1969 | A |
3679460 | Reid | Jul 1972 | A |
4384918 | Abe | May 1983 | A |
4412133 | Eckes et al. | Oct 1983 | A |
4419201 | Levinstein et al. | Dec 1983 | A |
4480284 | Tojo et al. | Oct 1984 | A |
4491496 | Laporte et al. | Jan 1985 | A |
4606802 | Kobayashi et al. | Aug 1986 | A |
4645218 | Ooshio et al. | Feb 1987 | A |
4665463 | Ward et al. | May 1987 | A |
4717462 | Homma et al. | Jan 1988 | A |
4832781 | Mears | May 1989 | A |
4872250 | De Marco | Oct 1989 | A |
4913784 | Bogenschutz et al. | Apr 1990 | A |
4995958 | Anderson et al. | Feb 1991 | A |
5055964 | Logan et al. | Oct 1991 | A |
5064511 | Gobbetti et al. | Nov 1991 | A |
5104834 | Watanabe et al. | Apr 1992 | A |
5117121 | Watanabe et al. | May 1992 | A |
5151845 | Watanabe et al. | Sep 1992 | A |
5166856 | Liporace et al. | Nov 1992 | A |
5191506 | Logan et al. | Mar 1993 | A |
5215639 | Boys | Jun 1993 | A |
5258047 | Tokisue et al. | Nov 1993 | A |
5270266 | Hirano et al. | Dec 1993 | A |
5275683 | Arami et al. | Jan 1994 | A |
5280156 | Niori et al. | Jan 1994 | A |
5314597 | Harra | May 1994 | A |
5315473 | Collins et al. | May 1994 | A |
5324053 | Kubota et al. | Jun 1994 | A |
5325261 | Horwitz | Jun 1994 | A |
5350479 | Collins et al. | Sep 1994 | A |
5356723 | Kimoto et al. | Oct 1994 | A |
5382469 | Kubota et al. | Jan 1995 | A |
5391275 | Mintz | Feb 1995 | A |
5401319 | Banholzer et al. | Mar 1995 | A |
5407551 | Sieck et al. | Apr 1995 | A |
5409590 | Hurwitt et al. | Apr 1995 | A |
5429711 | Watanabe et al. | Jul 1995 | A |
5433835 | Demaray et al. | Jul 1995 | A |
5458759 | Hosokawa et al. | Oct 1995 | A |
5460694 | Schapira et al. | Oct 1995 | A |
5463526 | Mundt | Oct 1995 | A |
5474649 | Kava et al. | Dec 1995 | A |
5487822 | Demaray et al. | Jan 1996 | A |
5490913 | Schertler et al. | Feb 1996 | A |
5512078 | Griffin | Apr 1996 | A |
5542559 | Kawakami et al. | Aug 1996 | A |
5549802 | Guo | Aug 1996 | A |
5587039 | Salimian et al. | Dec 1996 | A |
5643422 | Yamada | Jul 1997 | A |
5684669 | Collins et al. | Nov 1997 | A |
5685914 | Hills et al. | Nov 1997 | A |
5685959 | Bourez et al. | Nov 1997 | A |
5695825 | Scruggs | Dec 1997 | A |
5700179 | Hasegawa et al. | Dec 1997 | A |
5720818 | Donde et al. | Feb 1998 | A |
5762748 | Banholzer et al. | Jun 1998 | A |
5792562 | Collins et al. | Aug 1998 | A |
5800725 | Kato et al. | Sep 1998 | A |
5808270 | Marantz et al. | Sep 1998 | A |
5812362 | Ravi | Sep 1998 | A |
5821166 | Hajime et al. | Oct 1998 | A |
5824197 | Tanaka | Oct 1998 | A |
5830327 | Kolnekow | Nov 1998 | A |
5858100 | Maeda et al. | Jan 1999 | A |
5876573 | Moslehi et al. | Mar 1999 | A |
5879523 | Wang et al. | Mar 1999 | A |
5879524 | Hurwitt et al. | Mar 1999 | A |
5886863 | Nagasaki et al. | Mar 1999 | A |
5903428 | Grimard et al. | May 1999 | A |
5910338 | Donde et al. | Jun 1999 | A |
5916378 | Bailey et al. | Jun 1999 | A |
5916454 | Richardson et al. | Jun 1999 | A |
5920764 | Hanson | Jul 1999 | A |
5942041 | Lo et al. | Aug 1999 | A |
5942445 | Kato et al. | Aug 1999 | A |
5948288 | Treves et al. | Sep 1999 | A |
5951374 | Kato et al. | Sep 1999 | A |
5953827 | Or et al. | Sep 1999 | A |
5963778 | Stellrecht | Oct 1999 | A |
5976327 | Tanaka | Nov 1999 | A |
6010583 | Annavarapu et al. | Jan 2000 | A |
6015465 | Kholodenko et al. | Jan 2000 | A |
6026666 | Zimmermann et al. | Feb 2000 | A |
6051114 | Yao et al. | Apr 2000 | A |
6059945 | Fu et al. | May 2000 | A |
6071389 | Zhang | Jun 2000 | A |
6073830 | Hunt et al. | Jun 2000 | A |
6086735 | Gilman et al. | Jul 2000 | A |
6108189 | Weldon et al. | Aug 2000 | A |
6120640 | Shih et al. | Sep 2000 | A |
6143432 | de Rochemont et al. | Nov 2000 | A |
6146509 | Aragon | Nov 2000 | A |
6150762 | Kim et al. | Nov 2000 | A |
6152071 | Akiyama et al. | Nov 2000 | A |
6159299 | Koai et al. | Dec 2000 | A |
6162297 | Mintz et al. | Dec 2000 | A |
6170429 | Schoepp et al. | Jan 2001 | B1 |
6183614 | Fu | Feb 2001 | B1 |
6183686 | Bardus et al. | Feb 2001 | B1 |
6190516 | Xiong et al. | Feb 2001 | B1 |
6198067 | Ikeda et al. | Mar 2001 | B1 |
6199259 | Demaray et al. | Mar 2001 | B1 |
6221217 | Moslehi et al. | Apr 2001 | B1 |
6227435 | Lazarz et al. | May 2001 | B1 |
6238528 | Xu et al. | May 2001 | B1 |
6248667 | Kim et al. | Jun 2001 | B1 |
6250251 | Akiyama et al. | Jun 2001 | B1 |
6269670 | Koestermeier | Aug 2001 | B2 |
6274008 | Gopalraja et al. | Aug 2001 | B1 |
6276997 | Li | Aug 2001 | B1 |
6284093 | Ke et al. | Sep 2001 | B1 |
6284628 | Kuwahara et al. | Sep 2001 | B1 |
6287437 | Pandhumsoporn et al. | Sep 2001 | B1 |
6299740 | Hieronymi et al. | Oct 2001 | B1 |
6306226 | Lino et al. | Oct 2001 | B1 |
6306498 | Yuuki et al. | Oct 2001 | B1 |
6338781 | Sichmann et al. | Jan 2002 | B1 |
6338906 | Ritland et al. | Jan 2002 | B1 |
6340415 | Raaijmakers et al. | Jan 2002 | B1 |
6344114 | Sichmann et al. | Feb 2002 | B1 |
6365010 | Hollars | Apr 2002 | B1 |
6372609 | Aga | Apr 2002 | B1 |
6387809 | Toyama | May 2002 | B2 |
6416634 | Mostovoy et al. | Jul 2002 | B1 |
6423175 | Huang et al. | Jul 2002 | B1 |
6440221 | Shamouilian et al. | Aug 2002 | B2 |
6464794 | Park et al. | Oct 2002 | B1 |
6475336 | Hubacek | Nov 2002 | B1 |
6500321 | Ashtiani et al. | Dec 2002 | B1 |
6506312 | Bottomfield | Jan 2003 | B1 |
6555471 | Sandhu et al. | Apr 2003 | B2 |
6558505 | Suzuki et al. | May 2003 | B2 |
6576909 | Donaldson et al. | Jun 2003 | B2 |
6579431 | Bolcavage et al. | Jun 2003 | B1 |
6599405 | Hunt et al. | Jul 2003 | B2 |
6619537 | Zhang et al. | Sep 2003 | B1 |
6620736 | Drewery | Sep 2003 | B2 |
6623597 | Han et al. | Sep 2003 | B1 |
6623610 | Onishi | Sep 2003 | B1 |
6627050 | Miller et al. | Sep 2003 | B2 |
6652668 | Perry et al. | Nov 2003 | B1 |
6660135 | Yu et al. | Dec 2003 | B2 |
6708870 | Koenigsmann et al. | Mar 2004 | B2 |
6743340 | Fu | Jun 2004 | B2 |
6749103 | Ivanov et al. | Jun 2004 | B1 |
6776879 | Yamamoto et al. | Aug 2004 | B2 |
6777045 | Lin et al. | Aug 2004 | B2 |
6797362 | Parfeniuk et al. | Sep 2004 | B2 |
6824652 | Park | Nov 2004 | B2 |
6840427 | Ivanov | Jan 2005 | B2 |
6858116 | Okabe et al. | Feb 2005 | B2 |
6872284 | Ivanov et al. | Mar 2005 | B2 |
6916407 | Vosser et al. | Jul 2005 | B2 |
6933025 | Lin et al. | Aug 2005 | B2 |
6955852 | Ivanov | Oct 2005 | B2 |
6992261 | Kachalov et al. | Jan 2006 | B2 |
7026009 | Lin et al. | Apr 2006 | B2 |
7063773 | Ivanov et al. | Jun 2006 | B2 |
7131883 | Park et al. | Nov 2006 | B2 |
7146703 | Ivanov | Dec 2006 | B2 |
20010001367 | Koestermeier | May 2001 | A1 |
20010033706 | Shimomura et al. | Oct 2001 | A1 |
20010045353 | Hieronymi et al. | Nov 2001 | A1 |
20020029745 | Nagaiwa et al. | Mar 2002 | A1 |
20020033330 | Demaray et al. | Mar 2002 | A1 |
20020076490 | Chiang et al. | Jun 2002 | A1 |
20020086118 | Chang et al. | Jul 2002 | A1 |
20020090464 | Jiang et al. | Jul 2002 | A1 |
20020100680 | Yamamoto et al. | Aug 2002 | A1 |
20030026917 | Lin et al. | Feb 2003 | A1 |
20030047464 | Sun et al. | Mar 2003 | A1 |
20030116276 | Weldon et al. | Jun 2003 | A1 |
20030118731 | He et al. | Jun 2003 | A1 |
20030127319 | Demaray et al. | Jul 2003 | A1 |
20030168168 | Liu et al. | Sep 2003 | A1 |
20030173526 | Popiolkowski et al. | Sep 2003 | A1 |
20030185965 | Lin et al. | Oct 2003 | A1 |
20030218054 | Koenigsmann et al. | Nov 2003 | A1 |
20040056070 | Ivanov | Mar 2004 | A1 |
20040056211 | Popiolkowski et al. | Mar 2004 | A1 |
20040079634 | Wickersham et al. | Apr 2004 | A1 |
20040099285 | Wang et al. | May 2004 | A1 |
20040113364 | Ivanov | Jun 2004 | A1 |
20040256226 | Wickersham | Dec 2004 | A1 |
20040261946 | Endoh et al. | Dec 2004 | A1 |
20050011749 | Kachalov et al. | Jan 2005 | A1 |
20050061857 | Hunt et al. | Mar 2005 | A1 |
20050067469 | Facey et al. | Mar 2005 | A1 |
20050092604 | Ivanov | May 2005 | A1 |
20050147150 | Wickersham et al. | Jul 2005 | A1 |
20050161322 | Smathers | Jul 2005 | A1 |
20050178653 | Fisher | Aug 2005 | A1 |
20050211548 | Gung et al. | Sep 2005 | A1 |
20050282358 | Di Cioccio et al. | Dec 2005 | A1 |
20060005767 | Tsai et al. | Jan 2006 | A1 |
20060070876 | Wu et al. | Apr 2006 | A1 |
20060108217 | Krempel-Hesse et al. | May 2006 | A1 |
20060188742 | West et al. | Aug 2006 | A1 |
20060283703 | Lee et al. | Dec 2006 | A1 |
20070102286 | Schieble et al. | May 2007 | A1 |
20070125646 | Young et al. | Jun 2007 | A1 |
20070170052 | Ritchie et al. | Jul 2007 | A1 |
20070173059 | Young et al. | Jul 2007 | A1 |
20070215463 | Parkhe et al. | Sep 2007 | A1 |
20080178801 | Pavloff et al. | Jul 2008 | A1 |
20080257263 | Pavloff et al. | Oct 2008 | A1 |
Number | Date | Country |
---|---|---|
19719133 | Nov 1998 | DE |
0239349 | Sep 1987 | EP |
0439000 | Jul 1991 | EP |
0601788 | Jun 1994 | EP |
0635869 | Jan 1995 | EP |
0791956 | Aug 1997 | EP |
0818803 | Jan 1998 | EP |
0838838 | Apr 1998 | EP |
1094496 | Apr 2001 | EP |
54-162969 | Dec 1979 | JP |
02-027748 | Jan 1990 | JP |
04-367247 | Dec 1992 | JP |
06-232243 | Aug 1994 | JP |
07-197272 | Aug 1995 | JP |
09-017850 | Jan 1997 | JP |
11-137440 | May 1999 | JP |
2002-69695 | Mar 2002 | JP |
2002-69696 | Mar 2002 | JP |
WO 9917336 | Apr 1999 | WO |
WO 02093624 | Nov 2002 | WO |
WO 2004010494 | Jan 2004 | WO |
WO 2005071137 | Aug 2005 | WO |
WO 2008079722 | Jul 2008 | WO |
Number | Date | Country | |
---|---|---|---|
20060090706 A1 | May 2006 | US |