Claims
- 1. A silicon structure comprising:
- a silicon substrate;
- a first layer of Al.sub.x Ti.sub.y N.sub.z deposited on said silicon substrate, wherein x, y, and z are numbers >0 and <1;
- a layer of aluminum metal deposited onto said first layer of Al.sub.x Ti.sub.y N.sub.z ; and
- a second layer of Al.sub.x Ti.sub.y N.sub.z deposited onto said aluminum metal layer.
- 2. A silicon structure as claimed in claim 1 in which said substrate comprises silicon or silicon oxide.
- 3. A silicon structure as claimed in claim 1 in which x is from about 0.45-0.50, y is about 0.15, and z is from about 0.35-0.40.
- 4. A silicon structure as claimed in claim 1 in which said layers are deposited by sputtering.
- 5. A silicon structure as claimed in claim 1 in which said first and second layers of Al.sub.x Ti.sub.y N.sub.z are between about 100 to about 800 .ANG. thick.
- 6. A silicon structure as claimed in claim 1 in which said layer of aluminum is from about 500 to about 5000 .ANG. thick.
- 7. A field emission display device comprising:
- a glass substrate, a cathode on said glass substrate, said cathode including a plurality of emitters thereon;
- a dielectric layer on said cathode; and
- a gate positioned on said dielectric layer including a series of openings corresponding to the position of said emitters on said cathode; said cathode comprising a first layer of Al.sub.x Ti.sub.y N.sub.z deposited on said silicon substrate, wherein x, y, and z are numbers >0 and <1; a layer of aluminum metal deposited onto said first layer of Al.sub.x Ti.sub.y N.sub.z ; and a second layer of Al.sub.x Ti.sub.y N.sub.z deposited onto said aluminum metal layer.
- 8. A field emission display device as claimed in claim 7 in which x is from about 0.45-0.50, y is about 0.15, and z is from about 0.35-0.40.
- 9. A field emission display device as claimed in claim 7 in which said layers are deposited by sputtering.
- 10. A field emission display device as claimed in claim 7 in which said first and second layers of Al.sub.x Ti.sub.y N.sub.z are between about 100 to about 800 .ANG. thick.
- 11. A field emission display device as claimed in claim 7 in which said layer of aluminum is from about 500 to about 5000 .ANG. thick.
Government Interests
This invention was made with Government support under Contract No. DABT 63-97-C-0001 awarded by the Advanced Research Projects Agency (ARPA). The Government has certain rights in this invention.
US Referenced Citations (9)
Non-Patent Literature Citations (1)
Entry |
Onishi et al., "Influence of adding transition metal elements to an aluminum target on electrical resistivity and hillock resistance in sputter-deposited aluminum alloy thin films" J. Vac. Technol. A 14(5), Sep./Oct. 1996, pp. 2728-2735. |