Hirotaka Kizuki et al.; “Selective metalorganic chemical vapor deposition growth of GaAs on A1GaSA combined with situ HC1 gas etching”; Nov. 1, 1993; Introduction, p. 35-42. |
H. Kanber et al., “Origin and Reduction of Impurities at GaAs Epitaxial Layer-Substrate Interfaces,” Journal of Crystal Growth, 91 (1988) 632-638. |
S. Izumi et al., “Study on the accumulated impurities at the epilayer/substrate interface and their influence on the leakage current of metal-semiconductor-field effect transistors,” Journal of Crystal Growth, 133 (1993) 123-131. |