Susceptor heater and method of heating a substrate

Information

  • Patent Grant
  • 9299595
  • Patent Number
    9,299,595
  • Date Filed
    Monday, December 8, 2014
    9 years ago
  • Date Issued
    Tuesday, March 29, 2016
    8 years ago
Abstract
A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.
Description
FIELD OF THE DISCLOSURE

This disclosure relates generally to semiconductor processing, and more particularly to a susceptor and susceptor heater providing a more uniform heat distribution to a substrate.


BACKGROUND

Semiconductor fabrication processes are typically conducted with the substrates supported within a chamber under controlled conditions. For many purposes, semiconductor substrates (e.g., wafers) are heated inside the process chamber. For example, substrates can be heated by direct physical contact with an internally heated wafer holder or “chuck.” “Susceptors” are wafer supports used in systems where the wafer and susceptors absorb heat.


Some of the important controlled conditions for processing include, but are not limited to, fluid flow rate into the chamber, temperature of the reaction chamber, temperature of the fluid flowing into the reaction chamber, and temperature of the fluid throughout the fluid line.


Heating within the reaction chamber can occur in a number of ways, including lamp banks or arrays positioned above the substrate surface for directly heating the susceptor or susceptor heaters/pedestal heaters position below the susceptor. Traditionally, the pedestal style heater extends into the chamber through a bottom wall and the susceptor is mounted on a top surface of the heater. The heater may include a resistive heating element enclosed within the heater to provide conductive heat and increase the susceptor temperature. A major drawback to the resistive pedestal heater is the great deal of heat necessary in order to sufficiently raise the top surface temperature of the susceptor. In order to provide this high level of heat transfer, the pedestal heater and the susceptor interface becomes very hot and may lead to fusion between the two parts. Unfortunately, fusing the susceptor and heater together leads to increased reaction chamber downtime and additional refurbishment/replacement costs. Still further, there remains a continued risk of uneven heating susceptor heating.


SUMMARY

Various aspects and implementations are disclosed herein that relate to substrate support assembly designs and methods of heating a substrate within a reaction chamber. In one aspect, a susceptor heater includes a spacing member, a heating member connected to the spacing member, a shim removably mounted on the heating member, a fluid line inlet traversing the heating member, and a heat conductive fluid introduced through the fluid line inlet.


In an implementation, the susceptor heater may further include a fluid manifold connected to the heating member and the fluid line inlet. The susceptor heater fluid manifold may further include an inlet port and at least one outlet port. The at least one manifold outlet port may be positioned at an angle between 90 degrees and 180 degrees from the inlet port. The at least one outlet port may be three outlet ports positioned 120 degrees apart from each other. The fluid manifold may position a susceptor on the susceptor heater.


The susceptor heater may further include a susceptor positioned on the shim and defining a cavity between the susceptor, the shim, and the heating member. The cavity may further include a variable cross-sectional area. The heat conductive fluid may be selected from the group consisting of helium, nitrogen, and hydrogen. The susceptor heater may further include at least one fluid line exit positioned radially outside of the fluid line inlet. Each of the at least one fluid line exits may surround a wafer lift pin.


Each of the at least one fluid line exits may be in communication with a slot in the heating member. The slot may be in fluid communication with an outlet port. The heat conductive fluid may flow radially outward from the fluid line inlet. The susceptor heater may further include a heating element disposed within the heating member radially inward from the shim. The heating element may be positioned below a cavity formed by a susceptor, the shim, and the heating member.


In another aspect, a wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.


In an implementation, the wafer processing apparatus may further include flowing a heat conducting fluid through the fluid inlet, the cavity, and the plurality of fluid outlets. The heat conducting fluid may be helium. A heating element may be disposed within the susceptor heater and provides thermal energy to the heat conducting fluid. The fluid may flow radially outward from the fluid line inlet to the plurality of fluid outlets through the cavity.


In yet another aspect, a method of heating a susceptor in a wafer processing chamber includes the method of providing a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity, powering the heating element, and flowing a heat conductive fluid through the fluid inlet, the cavity, and the plurality of fluid outlets.


In an implementation, the heat conductive fluid may be helium. The fluid inlet orients the fluid flow within the cavity. A portion of the plurality of fluid outlets may be adjacent the shim and a portion of the plurality of fluid outlets may surround a plurality of lift pins. The heat conductive fluid may be cooled prior to the flowing step to reduce the susceptor temperature.


This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that solve any or all disadvantages noted in any part of this disclosure.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a cross-sectional view of a reaction chamber with a susceptor, a susceptor heater, and a cavity between the susceptor and the susceptor heater.



FIG. 2 is a cross-sectional view of a reaction chamber with a susceptor, a susceptor heater, and a cavity between the susceptor and the susceptor heater.



FIG. 3 is an exploded perspective view of a substrate support assembly with a shim and fluid flow cavities.



FIG. 4 is an enlarged cross-sectional view of the section labeled FIG. 4 in FIG. 1.



FIG. 5 is an enlarged cross-sectional view of the section labeled FIG. 5 in FIG. 2.



FIG. 6 is an enlarged cross-sectional view of the section labeled FIG. 6 in FIG. 2.



FIG. 7 is an exploded view of a second aspect susceptor and susceptor heater with a coated susceptor heater.



FIG. 8 is an enlarged cross-sectional view of the second aspect susceptor and susceptor heater.





DETAILED DESCRIPTION

The present aspects and implementations may be described in terms of functional block components and various processing steps. Such functional blocks may be realized by any number of hardware or software components configured to perform the specified functions and achieve the various results. For example, the present aspects may employ various sensors, detectors, flow control devices, heaters, and the like, which may carry out a variety of functions. In addition, the present aspects and implementations may be practiced in conjunction with any number of processing methods, and the apparatus and systems described may employ any number of processing methods, and the apparatus and systems described are merely examples of applications of the invention.



FIGS. 1 and 2 illustrate two cross-sectional views of a reaction chamber 10 taken along two different section lines to illustrate some of the various components therein. Reaction chamber 10 includes a showerhead 12 for directing process gases into the reaction chamber 10 and particularly on a substrate to be processed. The reaction chamber 10 may be divided into two chambers, an upper chamber 14 and a lower chamber 16 in one aspect. Upper chamber 14 generally includes showerhead 12, susceptor 18, and a chamber sealing mechanism 20 which together define a processing area 22. Processing area 22 is further generally defined by a bottom surface of showerhead 12 and a top surface of susceptor 18. Susceptor 18 may also include a central portion 24, a sealing ring 26, and a wafer positioning ring 28. Sealing ring 26 may be used to contact chamber sealing mechanism 20 when the susceptor 18 is in the processing position to separate the upper chamber 14 and lower chamber 16. Although the chamber sealing mechanism 20 is shown as a solid member, it may be semi-rigid, flexible, a labyrinth type seal in conjunction with the susceptor sealing ring 26, or any other suitable sealing mechanism to separate the upper chamber 14 from the lower chamber 16.


Moving to the lower chamber 16, a susceptor heater 30 includes a heating member 32 having a shape similar to susceptor 18 and a spacing member 34 positioned generally 90 degrees from heating member 32. Spacing member 34 may include a spacing bore 36 extending through a portion of spacing member 34 to carry an inlet tube 38 and an outlet tube 40 therein. A radiation shield 42 is secured to spacing member 34 with a radiation shield mount 44 on the exterior of spacing member 34. Radiation shield 42 limits the radiant heat lost to the lower chamber during processing.


Heating member 32 may include any number of heating mechanisms (not specifically shown) known in the art, including but not limited to a resistance heater, lamp banks, or inductive heaters. The heating mechanism is generally positioned near a top surface 46 of heating member 32 and within a heater section 48. In most aspects, the heating mechanism is positioned wholly within the heater section 48 and is not separately visible, but maybe in certain instances. Further, a lower portion 50 of heating member 32 and heater section 48 may be fused together or assembled as a single piece.


Heating member 32 may also include a slot 52 communicating with outlet tube 40 to direct a gas flow from the susceptor heater 30 as will be described in greater detail below. The heating member 32 may include a through hole 54 disposed within the member for receiving inlet tube 38 and a fluid manifold 56. A through hole 53 may be disposed proximate through hole 54 and is in fluid communication with slot 52 and outlet tube 40. Fluid manifold 56 may be mounted directly to inlet tube 38 and may assist in positioning the susceptor 18 with respect to susceptor heater 30.


As also shown in FIG. 1, lower chamber 16 may be partially defined by a chamber 58 formed by side walls 60 and bottom wall 62. An inert gas line 64 may be used to permit a continuous flow of a gas into the lower chamber 16 to assist in maintaining the chamber temperature. In one implementation, the inert gas line 64 provides an inert gas, although any suitable fluid may be utilized beyond an inert gas.


Moving to the interface between susceptor 18 and susceptor heater 30, a shim 66 may be positioned on heating member top surface 46 and contacting a bottom surface 68 of susceptor 18 when fully assembled. Shim 66 may have an open central portion defining a heating cavity 70 between an inner surface 72 of shim 66, the bottom surface 68 of susceptor 18 and the top surface 46 of susceptor heater 30. Further, shim 66 may have an aperture 74 (shown in FIG. 7 for example) for receiving a locating pin 76 embedded in susceptor heater 30 and receivable within a bore 78 in susceptor 18 and particularly bottom surface 68 of the susceptor.



FIG. 2 illustrates another cross-sectional view of the assembled reactor in the processing position. Slot 52 is shown on both a right side and a left side of inlet tube 38 to provide a return line to the outlet tube in order to remove the flow of a heat conductive fluid as will be discussed in greater detail below. A lift pin assembly 80 is shown to the right of inlet tube 38. However, in this implementation three lift pin assemblies are utilized. Nevertheless it is within the spirit and scope of the disclosure to incorporate any number of lift pin assemblies as may be required by the application.


Lift pin assembly 80 may include a lift pin 82 slidably maintained within a lift pin bushing 84. Lift pin bushing 84 is usually press fit into a through hole 86 in susceptor 18, while the lift pin may also pass through a fluid line exit 89. Fluid line exit 89 is preferably sized large enough to permit both lift pin 82 to pass through as necessary, but also to simultaneously flow heat conductive fluid therethrough. Similar to traditional operation, a lift pin stop 90 is position along bottom wall 62 and functions to bias lift pin 82 upwards when a bottom portion of lift pin 82 contacts lift pin stop 90, thereby raising the substrate on the susceptor.



FIG. 3 illustrates a perspective exploded view of susceptor 18, shim 66, and susceptor heater 30. Shim 66 may include a plurality of locating tabs 92 extending downward from the perimeter of shim 66 arranged to contact an outer perimeter of susceptor heater 30 and assisting in maintaining the position of shim 66 during processing. Heater section 48 of susceptor heater 30 includes a plurality of fluid line exits 88 and 89, with one implementation having three fluid line exits 88 positioned adjacent an outer edge of heater section 48 and three fluid line exits 89 positioned coaxial with lift pins 82 and through holes 86. Still further, in this implementation, the fluid line exits 88 positioned adjacent an outer edge of heater section 48 are preferably aligned with slots 52 in lower portion 50 and more preferably aligned with an outer edge of slots 52. Slots 52 are used to direct the fluid flow radially back towards the center after providing heat transfer to susceptor 18 and ultimately the substrate to be processed.


Fluid manifold 56 is positioned within a recessed portion 94 having ramped side walls 96 which provide an angular flow to the conductive fluid exiting fluid manifold 56 through the manifold outlet ports 98 and into heating cavity 70. As discussed above, fluid manifold 56 also includes a centering protrusion 100 and a spacing portion 102. Centering protrusion 100 is oriented to fit within a susceptor centering aperture 104 and provide more accurate and efficient positioning of the susceptor. Further, spacing portion 102 provides a flat surface for susceptor bottom surface 68 to contact while still maintaining heating cavity 70 between the non-contacted portion of susceptor bottom surface 68 and heating member top surface 46 of susceptor heater 30. Accordingly, there is provided a fluid line inlet in fluid communication with a fluid manifold to direct a heat conductive fluid in a cavity between the susceptor and the susceptor heater. The heat conducting fluid then flows radially outward until reaching fluid line exits 88 adjacent the outer edge or fluid line exits 89 surrounding the lift pins, or both as necessary. The fluid then travels through the fluid line exits 88 and into slots 52 where the fluid is then directed radially inward towards outlet tube 40 to remove the fluid from the susceptor heater vicinity. Thus, it is seen that a fluid, or fluid in gaseous form, may be provided between the susceptor heater and the susceptor to provide a more efficient heat transfer from the susceptor heater to the susceptor and ultimately the substrate to be processed.


It should be noted that the advantageous heat transfer may occur primarily due to the presence of the heat conductive fluid 106 being present within the heating cavity 70 and that flowing of the fluid is not required. The heat conductive fluid assists by taking on energy from the susceptor heater and impacting the susceptor at a greater rate of speed to transfer the heat energy at a great velocity in one aspect.



FIG. 4 illustrates an enlarged view of portions of susceptor 18 and susceptor heater 30. As particularly seen in this view, fluid manifold 56 is positioned between susceptor 18 and susceptor heater 30 and in fluid communication with inlet tube 38 and heating cavity 70. Specifically, manifold outlet ports 98 may be positioned at an angle A with respect to inlet tube 38. In one implementation, angle A can be between 90 degrees and 180 degrees, particularly between 90 degrees and 150 degrees, and more particularly at an angle A of 120 degrees from inlet tube 38. As such, the angle A provides for an angular exhaust of fluid manifold outlet ports 98 to direct a heat conductive fluid 106 into heating cavity 70.


A heat conductive fluid 106 is pumped through inlet tube 38 into fluid manifold 56 and then radially outward through heating cavity 70 and adjacent ramped sidewalls 96. The heat conductive fluid 106 exits manifold outlet ports 98 radially outward of inlet tube 38. While heating cavity 70 is shown as having a generally constant cross-sectional area radially outward of ramped sidewalls 96, the ramped sidewalls 96 assist is directing the heat conductive fluid 106 into the heating cavity 70 and may be used to increase the velocity of the fluid by modifying the shape of the ramps. Heating cavity 70 may have a variable cross-sectional thickness at various locations where an increase or a decrease in the amount of heat conductive fluid would affect the localized heat transfer to the specific position of the susceptor 18 and substrate being processed. Heat conductive fluid 106 may be any suitable liquid or gas, including but not limited to helium, nitrogen, or hydrogen. In another aspect, the heat conductive fluid 106 may be preheated before entering inlet tube 38 to reduce any heat loss between susceptor heater 30 and susceptor 18, or the heat conductive fluid 106 may enter the heating cavity 70 without any additional preheating as necessitated by the particular processing conditions. Further, the heat conductive fluid 106 can be used to achieve the opposite effect of cooling the susceptor 18 and susceptor heater 30 by cooling or chilling heat conductive fluid 106 and pumping the fluid through heating cavity 70 to remove the heat built up in the susceptor and susceptor heater to increase green to green time. Still further, the same concept can be used to rapidly increase the susceptor and susceptor heater temperatures by pumping pre-heated heat conductive fluid 106 within the heating cavity.


Referring now to FIG. 5, the heat conductive fluid 106 continues traveling radially outward until reaching fluid line exit 88 and traveling downward into slot 52. Once heat conductive fluid 106 enters slot 52, the heat conductive fluid is directed radially inward below the heater section 48 where a resistive heater 112 is positioned therein. Thus, the heat conductive fluid 106 is no longer providing the advantageous heat or energy transfer to susceptor 18 once the fluid is within slots 52 and traveling radially inward towards outlet tube 40. The heat conductive fluid 106 travels radially inward through slot 52 until reaching the through hole 53 in fluid communication with outlet tube 40 to direct the heat conductive fluid 106 out of the reaction chamber 10. Accordingly, this provides one potential full cycle of travel for the heat conductive fluid 106.



FIG. 6 illustrates another exit path for heat conductive fluid 106 in an implementation. Specifically, heat conductive fluid 106 is again pumped into heating cavity 70 where the fluid is directed radially outward until some or all of the heat conductive fluid 106 reaches fluid line exit 89 in susceptor heater 30 and travels around lift pin bushing 84 and lift pin 82. Further, the heat conductive fluid 106 may travel through an opening 110 in radiation shield 42 and enter lower chamber 16. Thus, it is seen that the heat conductive fluid 106 can provide an effective, efficient, and even means of transferring thermal energy from the susceptor heater to the susceptor by the presence of a heat conductive fluid 106 within the heating cavity 70. While the present disclosure shows and describes the heat conductive fluid as traveling radially outward when providing the heat transfer from the susceptor heater 30 to the susceptor 18, it is within the spirit and scope of the present disclosure to reverse the fluid flow travel direction to provide thermal energy transfer through the heat conductive fluid while the fluid travels radially inward.


Advantageously, the disclosure provides a number of other benefits, including but not limited to reducing a temperature lag during wafer pick-up since the heat transfer is more efficient, reduced power consumption and heater burnout due to lower power settings and cooler heating elements in the susceptor heater from the more efficient energy transfer to the susceptor, and increased cool down and warm up leading to shorter windows of tool downtime.



FIGS. 7 and 8 illustrate a second aspect susceptor heater. Susceptor 18 is positioned and oriented similar to the first aspect susceptor and may include a plurality of lift pins 82, lift pin bushings 84, and through holes 86. Shim 66 with aperture 74 may be positioned between susceptor 18 and susceptor heater 30, with locating tabs 92 used to maintain the relative position of the shim 66 on the susceptor heater while locating pin 76 is used to prevent rotational movement of shim 66 during operation. Susceptor heater 30 may also include a spacing member 34 and a heating member 32 with a heating element 112 locating therein and through holes 114 aligned to receive lift pins 82. Heating element 112 may be a standard resistive heater element having one or more elements or coils to produce and direct the heat signature as necessary. Further, heating element 112 may be similar to the heating element 112 of the first aspect, which is used to heat the heat conductive fluid 106.


Heating member 32 of susceptor heater 30 may include a sidewall 116 formed of bare aluminum, oxidized aluminum, or machined stainless steel in non-limiting examples. These three non-limiting examples are each generally low emissivity materials encouraging a rather low level of heat loss through sidewall 116 of the susceptor heater. Bare aluminum has an emissivity of approximately 0.2, while anodized aluminum has an emissivity of approximately 0.5 to 0.7, and machined stainless steel has an emissivity of approximately 0.5.


Heating member 32 of susceptor heater 30 may also include a heat conductive surface 118 facing susceptor 18 to provide a more efficient heat transfer in the direction of the susceptor 18. Non-limiting examples of heat conductive surface 118 materials include aluminum nitride or aluminum oxide, which have respective emissivities of 0.9 and 0.765. Accordingly, it is seen that varying the heat conductive surface 118 to provide a higher emissivity material than the sidewall 116 provides for greater heat transfer directly to the susceptor 18 and reduces energy lost from heating element 112. Still further, by increasing the surface roughness of the heat conductive surface 118, even higher efficiency of heat transfer can be accomplished. Therefore it can be advantageous to polish sidewall 116 while increasing the surface roughness of heat conductive surface 118.



FIGS. 7 and 8 illustrate the incorporation of shim 66 with heat conductive surface 118 which extends to the edge of the susceptor heater 30 and adjacent sidewall 116. While this is one implementation of heat conductive surface 118, the heat conductive surface 118 may terminate at an inner surface 72 of shim 66 and be aligned with an outer perimeter of heating element 112. Further, shim 66 may be omitted and there can be direct contact between susceptor 18 and heat conductive surface 118. Still further, when omitting shim 66 the heat conductive surface 118 may extend to adjacent sidewall 116 or may terminate at a perimeter of heating element 112. Although not shown, heat conductive surface 118 may be positioned at only limited places on the face of susceptor heater 32 to provide localized heating on only certain portions of the susceptor 18.


A number of implementations have been separately disclosed. Nevertheless, a person of ordinary skill in the art will recognize that it is within the spirit and scope of the disclosure to combine multiple implementations. For example, heater section 48 and particularly heating member top surface 46 may be coated with aluminum nitride or aluminum trioxide to further increase the heat transfer efficiency of the heat conductive fluid 106 within heating cavity 70. While this is just one example, any number of suitable combinations may be created within the spirit and scope of the disclosure, including various aspects with or without shim 66.


These and other embodiments for methods and apparatus for a reaction chamber having a shim between the susceptor and heater to form a cavity for flowing a conductive fluid therein may incorporate concepts, embodiments, and configurations as described with respect to embodiments of apparatus for heaters described above. The particular implementations shown and described are illustrative of the invention and its best mode and are not intended to otherwise limit the scope of the aspects and implementations in any way. Indeed, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. Furthermore, any connecting lines shown in the various figures are intended to represent exemplary functional relationships and/or physical couplings between the various elements. Many alternative or additional functional relationship or physical connections may be present in the practical system, and/or may be absent in some embodiments.


As used herein, the terms “comprises”, “comprising”, or any variation thereof, are intended to reference a non-exclusive inclusion, such that a process, method, article, composition or apparatus that comprises a list of elements does not include only those elements recited, but may also include other elements not expressly listed or inherent to such process, method, article, composition or apparatus. Other combinations and/or modifications of the above-described structures, arrangements, applications, proportions, elements, materials or components used in the practice of the present invention, in addition to those not specifically recited, may be varied or otherwise particularly adapted to specific environments, manufacturing specifications, design parameters or other operating requirements without departing from the general principles of the same.

Claims
  • 1. A susceptor heater assembly comprising: a heating member having a top surface;a fluid manifold connected to the heating member;a shim removably mounted on the heating member;a susceptor having a bottom surface, the susceptor connected to the shim;a fluid line inlet traversing the heating member;a fluid line in fluid communication with a cavity between the bottom surface and the top surface; anda heat conductive fluid introduced through the fluid line inlet to provide heat conductive fluid to the cavity.
  • 2. The susceptor heater of claim 1, wherein the fluid manifold comprises an inlet port and at least one outlet port.
  • 3. The susceptor heater of claim 2, wherein the at least one manifold outlet port is positioned at an angle between 90 degrees and 180 degrees from the inlet port.
  • 4. The susceptor heater of claim 2, wherein the at least one outlet port is three outlet ports positioned about 120 degrees apart from each other.
  • 5. The susceptor heater of claim 1, wherein the fluid manifold positions a susceptor on the susceptor heater.
  • 6. The susceptor heater of claim 1, further comprising a spacing portion.
  • 7. The susceptor heater of claim 1, wherein the cavity further comprises a variable cross-sectional area.
  • 8. The susceptor heater of claim 1, wherein the heat conductive fluid is selected from the group consisting of helium, nitrogen, and hydrogen.
  • 9. The susceptor heater of claim 1, further comprising at least one fluid line exit positioned radially outside of the fluid line inlet.
  • 10. The susceptor heater of claim 9, wherein each of the at least one fluid line exits surrounds a wafer lift pin.
  • 11. The susceptor heater of claim 1, wherein each of the at least one fluid line exits is in fluid communication with a slot in the heating member.
  • 12. The susceptor heater of claim 11, wherein the slot is in fluid communication with an outlet port.
  • 13. The susceptor heater of claim 1, further comprising a heating element disposed within the heating member radially inward from the shim.
  • 14. A wafer processing apparatus comprising: a susceptor having a top side and a backside;a susceptor heater having a heating member;a shim removably mounted between the susceptor and the susceptor heater;a cavity formed by the susceptor backside, the susceptor heater, and the shim;a fluid inlet communicating with the cavity, the fluid line configured to provide heat-conductive fluid to the cavity; andat least one fluid outlet communicating with the cavity.
  • 15. The wafer processing apparatus of claim 14, further comprising a heat conducting fluid flowing through the fluid inlet, the cavity, and the at least one fluid outlet.
  • 16. The wafer processing apparatus of claim 15, wherein the heat conducting fluid is selected from the group consisting of helium, nitrogen, and hydrogen.
  • 17. The wafer processing apparatus of claim 15, wherein a heating element is disposed within the susceptor heater and provides thermal energy to the heat conducting fluid.
  • 18. The wafer processing apparatus of claim 14, wherein a fluid flows radially outward from the fluid inlet to the plurality of fluid outlets through the cavity.
  • 19. A method of heating a susceptor in a wafer processing chamber comprising the method of: providing a susceptor having a top side and a backside, a susceptor heater having a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, and a fluid inlet communicating with the cavity;heating the heating element; and,flowing a heat conductive fluid through the fluid inlet, the cavity, and at least one fluid outlet.
  • 20. The method of claim 19, wherein the heat conductive fluid is selected from the group consisting of helium, nitrogen, and hydrogen.
  • 21. The method of claim 19, wherein the fluid inlet orients the fluid flow within the cavity.
  • 22. The method of claim 19, wherein the heat conductive fluid is cooled prior to the flowing step to reduce the susceptor temperature.
CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of and claims priority to U.S. patent application Ser. No. 13/535,214 entitled SUSCEPTOR HEATER AND METHOD OF HEATING A SUBSTRATE, filed on Jun. 27, 2012, the disclosure of which is incorporated herein by reference.

US Referenced Citations (476)
Number Name Date Kind
2745640 Cushman May 1956 A
2990045 Root Sep 1959 A
3833492 Bollyky Sep 1974 A
3854443 Baerg Dec 1974 A
3862397 Anderson et al. Jan 1975 A
3887790 Ferguson Jun 1975 A
4054071 Patejak Oct 1977 A
4058430 Suntola et al. Nov 1977 A
4145699 Hu et al. Mar 1979 A
4176630 Elmer Dec 1979 A
4181330 Kojima Jan 1980 A
4194536 Stine et al. Mar 1980 A
4322592 Martin Mar 1982 A
4389973 Suntola et al. Jun 1983 A
4393013 McMenamin Jul 1983 A
4436674 McMenamin Mar 1984 A
4499354 Hill et al. Feb 1985 A
4512113 Budinger Apr 1985 A
4570328 Price et al. Feb 1986 A
D288556 Wallgren Mar 1987 S
4653541 Oehlschlaeger et al. Mar 1987 A
4722298 Rubin et al. Feb 1988 A
4735259 Vincent Apr 1988 A
4753192 Goldsmith et al. Jun 1988 A
4789294 Sato et al. Dec 1988 A
4821674 deBoer et al. Apr 1989 A
4827430 Aid et al. May 1989 A
4882199 Sadoway et al. Nov 1989 A
4986215 Yamada Jan 1991 A
4991614 Hammel Feb 1991 A
5062386 Christensen Nov 1991 A
5074017 Toya et al. Dec 1991 A
5119760 McMillan et al. Jun 1992 A
5167716 Boitnott et al. Dec 1992 A
5199603 Prescott Apr 1993 A
5221556 Hawkins et al. Jun 1993 A
5242539 Kumihashi et al. Sep 1993 A
5243195 Nishi Sep 1993 A
5326427 Jerbic Jul 1994 A
5380367 Bertone Jan 1995 A
5421893 Perlov Jun 1995 A
5422139 Fischer Jun 1995 A
5518549 Hellwig May 1996 A
5595606 Fujikawa et al. Jan 1997 A
5616947 Tamura Apr 1997 A
5632919 MacCracken et al. May 1997 A
5681779 Pasch et al. Oct 1997 A
5695567 Kordina Dec 1997 A
5730801 Tepman et al. Mar 1998 A
5732744 Barr et al. Mar 1998 A
5736314 Hayes et al. Apr 1998 A
5796074 Edelstein et al. Aug 1998 A
5836483 Disel Nov 1998 A
5837320 Hampden-Smith et al. Nov 1998 A
5855680 Soininen et al. Jan 1999 A
5920798 Higuchi et al. Jul 1999 A
5979506 Aarseth Nov 1999 A
6013553 Wallace Jan 2000 A
6015465 Kholodenko et al. Jan 2000 A
6035101 Sajoto et al. Mar 2000 A
6060691 Minami et al. May 2000 A
6074443 Venkatesh et al. Jun 2000 A
6083321 Lei et al. Jul 2000 A
6086677 Umotoy et al. Jul 2000 A
6122036 Yamasaki et al. Sep 2000 A
6125789 Gupta et al. Oct 2000 A
6129044 Zhao et al. Oct 2000 A
6148761 Majewski et al. Nov 2000 A
6160244 Ohashi Dec 2000 A
6161500 Kopacz et al. Dec 2000 A
6201999 Jevtic Mar 2001 B1
6274878 Li et al. Aug 2001 B1
6287965 Kang et al. Sep 2001 B1
6302964 Umotoy et al. Oct 2001 B1
6312525 Bright et al. Nov 2001 B1
D451893 Robson Dec 2001 S
D452220 Robson Dec 2001 S
6326597 Lubomirsky et al. Dec 2001 B1
6342427 Choi et al. Jan 2002 B1
6367410 Leahey et al. Apr 2002 B1
6368987 Kopacz et al. Apr 2002 B1
6383566 Zagdoun May 2002 B1
6410459 Blalock et al. Jun 2002 B2
6420279 Ono et al. Jul 2002 B1
6454860 Metzner et al. Sep 2002 B2
6478872 Chae et al. Nov 2002 B1
6482331 Lu et al. Nov 2002 B2
6483989 Okada et al. Nov 2002 B1
6511539 Raaijmakers Jan 2003 B1
6521295 Remington Feb 2003 B1
6534395 Werkhoven et al. Mar 2003 B2
6569239 Arai et al. May 2003 B2
6579833 McNallan et al. Jun 2003 B1
6590251 Kang et al. Jul 2003 B2
6594550 Okrah Jul 2003 B1
6598559 Vellore et al. Jul 2003 B1
6627503 Ma et al. Sep 2003 B2
6633364 Hayashi Oct 2003 B2
6645304 Yamaguchi Nov 2003 B2
6648974 Ogliari et al. Nov 2003 B1
6673196 Oyabu Jan 2004 B1
6682973 Paton et al. Jan 2004 B1
6709989 Ramdani et al. Mar 2004 B2
6710364 Guldi et al. Mar 2004 B2
6734090 Agarwala et al. May 2004 B2
6820570 Kilpela et al. Nov 2004 B2
6821910 Adomaitis et al. Nov 2004 B2
6824665 Shipley et al. Nov 2004 B2
6847014 Benjamin et al. Jan 2005 B1
6858524 Haukka et al. Feb 2005 B2
6858547 Metzner Feb 2005 B2
6863019 Shamouilian Mar 2005 B2
6874480 Ismailov Apr 2005 B1
6875677 Conley, Jr. et al. Apr 2005 B1
6884066 Nguyen et al. Apr 2005 B2
6884319 Kim Apr 2005 B2
6889864 Lindfors et al. May 2005 B2
6909839 Wang et al. Jun 2005 B2
6930059 Conley, Jr. et al. Aug 2005 B2
6935269 Lee et al. Aug 2005 B2
6955836 Kumagai et al. Oct 2005 B2
6972478 Waite et al. Dec 2005 B1
7045430 Ahn et al. May 2006 B2
7053009 Conley, Jr. et al. May 2006 B2
7071051 Jeon et al. Jul 2006 B1
7115838 Kurara et al. Oct 2006 B2
7122085 Shero et al. Oct 2006 B2
7129165 Basol et al. Oct 2006 B2
7132360 Schaeffer et al. Nov 2006 B2
7135421 Ahn et al. Nov 2006 B2
7147766 Uzoh et al. Dec 2006 B2
7172497 Basol et al. Feb 2007 B2
7192824 Ahn et al. Mar 2007 B2
7192892 Ahn et al. Mar 2007 B2
7195693 Cowans Mar 2007 B2
7204887 Kawamura et al. Apr 2007 B2
7205247 Lee et al. Apr 2007 B2
7235501 Ahn et al. Jun 2007 B2
7238596 Kouvetakis et al. Jul 2007 B2
D553104 Oohashi et al. Oct 2007 S
7298009 Yan et al. Nov 2007 B2
D557226 Uchino et al. Dec 2007 S
7312494 Ahn et al. Dec 2007 B2
7329947 Adachi et al. Feb 2008 B2
7357138 Ji et al. Apr 2008 B2
7393418 Yokogawa Jul 2008 B2
7393736 Ahn et al. Jul 2008 B2
7402534 Mahajani Jul 2008 B2
7405166 Liang et al. Jul 2008 B2
7405454 Ahn et al. Jul 2008 B2
7414281 Fastow et al. Aug 2008 B1
7431966 Derderian et al. Oct 2008 B2
7437060 Wang et al. Oct 2008 B2
7442275 Cowans Oct 2008 B2
7489389 Shibazaki et al. Feb 2009 B2
D593969 Li Jun 2009 S
7547363 Tomiyasu et al. Jun 2009 B2
7575968 Sadaka et al. Aug 2009 B2
7589003 Kouvetakis et al. Sep 2009 B2
7598513 Kouvetakis et al. Oct 2009 B2
7601223 Lindfors et al. Oct 2009 B2
7601225 Tuominen et al. Oct 2009 B2
7640142 Tachikawa et al. Dec 2009 B2
7651583 Kent et al. Jan 2010 B2
D609655 Sugimoto Feb 2010 S
7678197 Maki Mar 2010 B2
D614153 Fondurulia et al. Apr 2010 S
7720560 Menser et al. May 2010 B2
7723648 Tsukamoto et al. May 2010 B2
7740705 Li Jun 2010 B2
7780440 Shibagaki et al. Aug 2010 B2
7833353 Furukawahara et al. Nov 2010 B2
7838084 Derderian et al. Nov 2010 B2
7851019 Tuominen et al. Dec 2010 B2
7884918 Hattori Feb 2011 B2
D634719 Yasuda et al. Mar 2011 S
7939447 Bauer et al. May 2011 B2
8041197 Kasai et al. Oct 2011 B2
8055378 Numakura Nov 2011 B2
8071451 Berry Dec 2011 B2
8071452 Raisanen Dec 2011 B2
8072578 Yasuda et al. Dec 2011 B2
8076230 Wei Dec 2011 B2
8076237 Uzoh Dec 2011 B2
8082946 Laverdiere et al. Dec 2011 B2
8092604 Tomiyasu et al. Jan 2012 B2
8137462 Fondurulia et al. Mar 2012 B2
8147242 Shibagaki et al. Apr 2012 B2
8216380 White et al. Jul 2012 B2
8278176 Bauer et al. Oct 2012 B2
8282769 Iizuka Oct 2012 B2
8287648 Reed et al. Oct 2012 B2
8293016 Bahng et al. Oct 2012 B2
8309173 Tuominen et al. Nov 2012 B2
8323413 Son Dec 2012 B2
8367528 Bauer et al. Feb 2013 B2
8372204 Nakamura Feb 2013 B2
8444120 Gregg et al. May 2013 B2
8506713 Takagi Aug 2013 B2
D691974 Osada et al. Oct 2013 S
8608885 Goto et al. Dec 2013 B2
8683943 Onodera et al. Apr 2014 B2
8711338 Liu et al. Apr 2014 B2
D705745 Kurs et al. May 2014 S
8726837 Patalay et al. May 2014 B2
8728832 Raisanen et al. May 2014 B2
8802201 Raisanen et al. Aug 2014 B2
8821640 Cleary et al. Sep 2014 B2
D716742 Jang et al. Nov 2014 S
8877655 Shero et al. Nov 2014 B2
8883270 Shero et al. Nov 2014 B2
8986456 Fondurulia et al. Mar 2015 B2
8993054 Jung et al. Mar 2015 B2
9005539 Halpin et al. Apr 2015 B2
9017481 Pettinger et al. Apr 2015 B1
9018111 Milligan et al. Apr 2015 B2
9021985 Alokozai et al. May 2015 B2
9029253 Milligan et al. May 2015 B2
9096931 Yednak et al. Aug 2015 B2
9117866 Marquardt et al. Aug 2015 B2
20010017103 Takeshita et al. Aug 2001 A1
20010046765 Cappellani et al. Nov 2001 A1
20020001974 Chan Jan 2002 A1
20020011210 Satoh et al. Jan 2002 A1
20020064592 Datta et al. May 2002 A1
20020098627 Pomarede et al. Jul 2002 A1
20020108670 Baker et al. Aug 2002 A1
20020115252 Haukka et al. Aug 2002 A1
20020172768 Endo et al. Nov 2002 A1
20020187650 Blalock et al. Dec 2002 A1
20030019580 Strang Jan 2003 A1
20030025146 Narwankar et al. Feb 2003 A1
20030040158 Saitoh Feb 2003 A1
20030042419 Katsumata et al. Mar 2003 A1
20030066826 Lee et al. Apr 2003 A1
20030075925 Lindfors et al. Apr 2003 A1
20030094133 Yoshidome et al. May 2003 A1
20030111963 Tolmachev et al. Jun 2003 A1
20030141820 White et al. Jul 2003 A1
20030168001 Sneh Sep 2003 A1
20030180458 Sneh Sep 2003 A1
20030228772 Cowans Dec 2003 A1
20030232138 Tuominen et al. Dec 2003 A1
20040009679 Yeo et al. Jan 2004 A1
20040013577 Ganguli et al. Jan 2004 A1
20040018307 Park et al. Jan 2004 A1
20040018750 Sophie et al. Jan 2004 A1
20040023516 Londergan et al. Feb 2004 A1
20040036129 Forbes et al. Feb 2004 A1
20040077182 Lim et al. Apr 2004 A1
20040101622 Park et al. May 2004 A1
20040106249 Huotari Jun 2004 A1
20040144980 Ahn et al. Jul 2004 A1
20040168627 Conley et al. Sep 2004 A1
20040169032 Murayama et al. Sep 2004 A1
20040198069 Metzner et al. Oct 2004 A1
20040200499 Harvey et al. Oct 2004 A1
20040219793 Hishiya et al. Nov 2004 A1
20040221807 Verghese et al. Nov 2004 A1
20040266011 Lee et al. Dec 2004 A1
20050008799 Tomiyasu et al. Jan 2005 A1
20050019026 Wang et al. Jan 2005 A1
20050020071 Sonobe et al. Jan 2005 A1
20050023624 Ahn et al. Feb 2005 A1
20050054228 March Mar 2005 A1
20050066893 Soininen Mar 2005 A1
20050070123 Hirano Mar 2005 A1
20050072357 Shero et al. Apr 2005 A1
20050092249 Kilpela et al. May 2005 A1
20050100669 Kools et al. May 2005 A1
20050106893 Wilk May 2005 A1
20050110069 Kil et al. May 2005 A1
20050123690 Derderian et al. Jun 2005 A1
20050173003 Laverdiere et al. Aug 2005 A1
20050187647 Wang et al. Aug 2005 A1
20050212119 Shero Sep 2005 A1
20050214457 Schmitt et al. Sep 2005 A1
20050214458 Meiere Sep 2005 A1
20050218462 Ahn et al. Oct 2005 A1
20050229848 Shinriki Oct 2005 A1
20050229972 Hoshi et al. Oct 2005 A1
20050241176 Shero et al. Nov 2005 A1
20050260347 Narwankar et al. Nov 2005 A1
20050263075 Wang et al. Dec 2005 A1
20050271813 Kher et al. Dec 2005 A1
20050282101 Adachi Dec 2005 A1
20050287725 Kitagawa Dec 2005 A1
20060013946 Park et al. Jan 2006 A1
20060014384 Lee et al. Jan 2006 A1
20060019033 Muthukrishnan et al. Jan 2006 A1
20060024439 Tuominen et al. Feb 2006 A2
20060046518 Hill et al. Mar 2006 A1
20060051925 Ahn et al. Mar 2006 A1
20060060930 Metz et al. Mar 2006 A1
20060062910 Meiere Mar 2006 A1
20060063346 Lee et al. Mar 2006 A1
20060068125 Radhakrishnan Mar 2006 A1
20060110934 Fukuchi May 2006 A1
20060113675 Chang et al. Jun 2006 A1
20060128168 Ahn et al. Jun 2006 A1
20060148180 Ahn et al. Jul 2006 A1
20060163612 Kouvetakis et al. Jul 2006 A1
20060193979 Meiere et al. Aug 2006 A1
20060208215 Metzner et al. Sep 2006 A1
20060213439 Ishizaka Sep 2006 A1
20060223301 Vanhaelemeersch et al. Oct 2006 A1
20060226117 Bertram et al. Oct 2006 A1
20060228888 Lee et al. Oct 2006 A1
20060240574 Yoshie Oct 2006 A1
20060257563 Doh et al. Nov 2006 A1
20060257584 Derderian et al. Nov 2006 A1
20060258078 Lee et al. Nov 2006 A1
20060266289 Verghese et al. Nov 2006 A1
20070010072 Bailey et al. Jan 2007 A1
20070020953 Tsai et al. Jan 2007 A1
20070022954 Iizuka et al. Feb 2007 A1
20070028842 Inagawa et al. Feb 2007 A1
20070031598 Okuyama et al. Feb 2007 A1
20070031599 Gschwandtner et al. Feb 2007 A1
20070037412 Dip et al. Feb 2007 A1
20070042117 Kuppurao et al. Feb 2007 A1
20070049053 Mahajani Mar 2007 A1
20070059948 Metzner et al. Mar 2007 A1
20070065578 McDougall Mar 2007 A1
20070066010 Ando Mar 2007 A1
20070077355 Chacin et al. Apr 2007 A1
20070084405 Kim Apr 2007 A1
20070096194 Streck et al. May 2007 A1
20070116873 Li et al. May 2007 A1
20070134942 Ahn et al. Jun 2007 A1
20070146621 Yeom Jun 2007 A1
20070155138 Tomasini et al. Jul 2007 A1
20070163440 Kim et al. Jul 2007 A1
20070166457 Yamoto et al. Jul 2007 A1
20070175397 Tomiyasu et al. Aug 2007 A1
20070209590 Li Sep 2007 A1
20070232501 Tonomura Oct 2007 A1
20070237697 Clark Oct 2007 A1
20070249131 Allen et al. Oct 2007 A1
20070252244 Srividya et al. Nov 2007 A1
20070264807 Leone et al. Nov 2007 A1
20080006208 Ueno et al. Jan 2008 A1
20080029790 Ahn et al. Feb 2008 A1
20080054332 Kim et al. Mar 2008 A1
20080057659 Forbes et al. Mar 2008 A1
20080069955 Hong et al. Mar 2008 A1
20080075881 Won et al. Mar 2008 A1
20080085226 Fondurulia et al. Apr 2008 A1
20080113096 Mahajani May 2008 A1
20080113097 Mahajani et al. May 2008 A1
20080124908 Forbes et al. May 2008 A1
20080149031 Chu et al. Jun 2008 A1
20080176375 Erben et al. Jul 2008 A1
20080182075 Chopra Jul 2008 A1
20080216077 Emani et al. Sep 2008 A1
20080224240 Ahn et al. Sep 2008 A1
20080233288 Clark Sep 2008 A1
20080237572 Chui et al. Oct 2008 A1
20080248310 Kim et al. Oct 2008 A1
20080261413 Mahajani Oct 2008 A1
20080277715 Ohmi et al. Nov 2008 A1
20080282970 Heys et al. Nov 2008 A1
20080315292 Ji et al. Dec 2008 A1
20090000550 Tran et al. Jan 2009 A1
20090011608 Nabatame Jan 2009 A1
20090020072 Mizunaga et al. Jan 2009 A1
20090029564 Yamashita et al. Jan 2009 A1
20090035947 Horii Feb 2009 A1
20090061644 Chiang et al. Mar 2009 A1
20090085156 Dewey et al. Apr 2009 A1
20090093094 Ye et al. Apr 2009 A1
20090095221 Tam et al. Apr 2009 A1
20090107404 Ogliari et al. Apr 2009 A1
20090136668 Gregg et al. May 2009 A1
20090139657 Lee et al. Jun 2009 A1
20090211523 Kuppurao et al. Aug 2009 A1
20090211525 Sarigiannis et al. Aug 2009 A1
20090239386 Suzaki et al. Sep 2009 A1
20090242957 Ma et al. Oct 2009 A1
20090246374 Vukovic Oct 2009 A1
20090261331 Yang et al. Oct 2009 A1
20090277510 Shikata Nov 2009 A1
20090283041 Tomiyasu et al. Nov 2009 A1
20090289300 Sasaki et al. Nov 2009 A1
20100024727 Kim et al. Feb 2010 A1
20100025796 Dabiran Feb 2010 A1
20100055312 Kato et al. Mar 2010 A1
20100075507 Chang et al. Mar 2010 A1
20100102417 Ganguli et al. Apr 2010 A1
20100124610 Aikawa et al. May 2010 A1
20100126605 Stones May 2010 A1
20100130017 Luo et al. May 2010 A1
20100162752 Tabata et al. Jul 2010 A1
20100170441 Won et al. Jul 2010 A1
20100193501 Zucker et al. Aug 2010 A1
20100230051 Iizuka Sep 2010 A1
20100255198 Cleary et al. Oct 2010 A1
20100275846 Kitagawa Nov 2010 A1
20100294199 Tran et al. Nov 2010 A1
20100307415 Shero et al. Dec 2010 A1
20100322604 Fondurulia et al. Dec 2010 A1
20110000619 Suh Jan 2011 A1
20110061810 Ganguly et al. Mar 2011 A1
20110070380 Shero et al. Mar 2011 A1
20110089469 Merckling Apr 2011 A1
20110097901 Banna et al. Apr 2011 A1
20110108194 Yoshioka et al. May 2011 A1
20110236600 Fox et al. Sep 2011 A1
20110239936 Suzaki et al. Oct 2011 A1
20110254052 Kouvetakis et al. Oct 2011 A1
20110256734 Hausmann et al. Oct 2011 A1
20110275166 Shero et al. Nov 2011 A1
20110308460 Hong et al. Dec 2011 A1
20120024479 Palagashvili et al. Feb 2012 A1
20120070136 Koelmel et al. Mar 2012 A1
20120070997 Larson Mar 2012 A1
20120090704 Laverdiere et al. Apr 2012 A1
20120098107 Raisanen et al. Apr 2012 A1
20120114877 Lee May 2012 A1
20120156108 Fondurulia et al. Jun 2012 A1
20120160172 Wamura et al. Jun 2012 A1
20120240858 Taniyama et al. Sep 2012 A1
20120270393 Pore et al. Oct 2012 A1
20120289053 Holland et al. Nov 2012 A1
20120295427 Bauer Nov 2012 A1
20120304935 Oosterlaken et al. Dec 2012 A1
20120318334 Bedell et al. Dec 2012 A1
20120321786 Satitpunwaycha et al. Dec 2012 A1
20130011983 Tsai Jan 2013 A1
20130023129 Reed Jan 2013 A1
20130081702 Mohammed et al. Apr 2013 A1
20130104988 Yednak et al. May 2013 A1
20130104992 Yednak et al. May 2013 A1
20130115383 Lu et al. May 2013 A1
20130126515 Shero et al. May 2013 A1
20130129577 Halpin et al. May 2013 A1
20130182814 Huang Jul 2013 A1
20130230814 Dunn et al. Sep 2013 A1
20130256838 Sanchez et al. Oct 2013 A1
20130264659 Jung Oct 2013 A1
20130292676 Milligan et al. Nov 2013 A1
20130292807 Raisanen et al. Nov 2013 A1
20130330911 Huang et al. Dec 2013 A1
20140000843 Dunn et al. Jan 2014 A1
20140014644 Akiba et al. Jan 2014 A1
20140020619 Vincent et al. Jan 2014 A1
20140027884 Tang et al. Jan 2014 A1
20140036274 Marquardt et al. Feb 2014 A1
20140060147 Sarin et al. Mar 2014 A1
20140067110 Lawson et al. Mar 2014 A1
20140073143 Alokozai et al. Mar 2014 A1
20140077240 Roucka et al. Mar 2014 A1
20140084341 Weeks Mar 2014 A1
20140087544 Tolle Mar 2014 A1
20140103145 White et al. Apr 2014 A1
20140120487 Kaneko May 2014 A1
20140159170 Raisanen et al. Jun 2014 A1
20140175054 Carlson et al. Jun 2014 A1
20140217065 Winkler et al. Aug 2014 A1
20140220247 Haukka et al. Aug 2014 A1
20140225065 Rachmady et al. Aug 2014 A1
20140251953 Winkler et al. Sep 2014 A1
20140251954 Winkler et al. Sep 2014 A1
20140346650 Raisanen et al. Nov 2014 A1
20150004316 Thompson et al. Jan 2015 A1
20150014632 Kim et al. Jan 2015 A1
20150024609 Milligan et al. Jan 2015 A1
20150048485 Tolle Feb 2015 A1
20150091057 Xie et al. Apr 2015 A1
20150096973 Dunn et al. Apr 2015 A1
20150132212 Winkler et al. May 2015 A1
20150140210 Jung et al. May 2015 A1
20150147877 Jung May 2015 A1
20150167159 Halpin et al. Jun 2015 A1
20150184291 Alokozai et al. Jul 2015 A1
20150187568 Pettinger et al. Jul 2015 A1
Foreign Referenced Citations (22)
Number Date Country
1563483 Jan 2005 CN
101330015 Dec 2008 CN
101522943 Sep 2009 CN
101423937 Sep 2011 CN
2036600 Mar 2009 EP
H07283149 Oct 1995 JP
H08335558 Dec 1996 JP
2001342570 Dec 2001 JP
2004014952 Jan 2004 JP
2004091848 Mar 2004 JP
2004538374 Dec 2004 JP
2005507030 Mar 2005 JP
2006186271 Jul 2006 JP
2008527748 Jul 2008 JP
I226380 Jan 2005 TW
200701301 Jan 2007 TW
2006056091 Jun 2006 WO
2006078666 Jul 2006 WO
2010118051 Jan 2011 WO
2011019950 Feb 2011 WO
2013078065 May 2013 WO
2013078066 May 2013 WO
Non-Patent Literature Citations (143)
Entry
USPTO; Office Action dated Aug. 27, 2010 in U.S. Appl. No. 12/118,596.
USPTO; Office Action dated Feb. 15, 2011 in U.S. Appl. No. 12/118,596.
USPTO; Notice of Allowance dated Aug. 4, 2011 in U.S. Appl. No. 12/118,596.
USPTO; Notice of Allowance dated Jun. 16, 2011 in U.S. Appl. No. 12/430,751.
USPTO; Notice of Allowance dated Jul. 27, 2011 in U.S. Appl. No. 12/430,751.
USPTO; Restriction Requirement dated Jan. 15, 2013 in U.S. Appl. No. 12/754,223.
USPTO; Office Action dated Feb. 26, 2013 in U.S. Appl. No. 12/754,223.
USPTO; Final Office Action dated Jun. 28, 2013 in U.S. Appl. No. 12/754,223.
USPTO; Office Action dated Feb. 25, 2014 in U.S. Appl. No. 12/754,223.
USPTO; Final Office Action dated Jul. 14, 2014 in U.S. Appl. No. 12/754,223.
USPTO; Office Action dated Apr. 23, 2013 in U.S. Appl. No. 12/763,037.
USPTO; Final Office Action dated Oct. 21, 2013 in U.S. Appl. No. 12/763,037.
USPTO; Office Action dated Oct. 8, 2014 in U.S. Appl. No. 12/763,037.
USPTO; Notice of Allowance dated Jan. 27, 2015 in U.S. Appl. No. 12/763,037.
USPTO; Restriction Requirement dated Sep. 25, 2012 in U.S. Appl. No. 12/854,818.
USPTO; Office Action dated Dec. 6, 2012 in U.S. Appl. No. 12/854,818.
USPTO; Final Office Action dated Mar. 13, 2013 in U.S. Appl. No. 12/854,818.
USPTO; Office Action dated Aug. 30, 2013 in U.S. Appl. No. 12/854,818.
USPTO; Final Office Action dated Mar. 26, 2014 in U.S. Appl. No. 12/854,818.
USPTO; Office Action dated Jun. 3, 2014 in U.S. Appl. No. 12/854,818.
USPTO; Restriction Requirement dated May 8, 2013 in U.S. Appl. No. 13/102,980.
USPTO; Office Action dated Oct. 7, 2013 in U.S. Appl. No. 13/102,980.
USPTO; Final Office Action dated Mar. 25, 2014 in U.S. Appl. No. 13/102,980.
USPTO; Notice of Allowance dated Jul. 3, 2014 in U.S. Appl. No. 13/102,980.
USPTO; Non-Final Office Action dated Sep. 17, 2014 in U.S. Appl. No. 13/187,300.
USPTO; Non-Final Office Action dated Jul. 2, 2014 in U.S. Appl. No. 13/283,408.
USPTO; Final Office Action dated Jan. 29, 2015 in U.S. Appl. No. 13/283,408.
USPTO; Restriction Requirement dated Dec. 16, 2013 in U.S. Appl. No. 13/284,642.
USPTO; Restriction Requirement dated Apr. 21, 2014 in U.S. Appl. No. 13/284,642.
USPTO; Office Action dated Jul. 30, 2014 in U.S. Appl. No. 13/284,642.
USPTO; Notice of Allowance dated Feb. 11, 2015 in U.S. Appl. No. 13/284,642.
USPTO; Office Action dated Jan. 28, 2014 in U.S. Appl. No. 13/312,591.
USPTO; Final Office Action dated May 14, 2014 in U.S. Appl. No. 13/312,591.
USPTO; Non-Final Office Action dated Nov. 26, 2014 in U.S. Appl. No. 13/312,591.
USPTO; Office Action dated Jan. 10, 2013 in U.S. Appl. No. 13/339,609.
USPTO; Office Action dated Feb. 11, 2013 in U.S. Appl. No. 13/339,609.
USPTO; Final Office Action dated May 17, 2013 in U.S. Appl. No. 13/339,609.
USPTO; Office Action dated Aug. 29, 2013 in U.S. Appl. No. 13/339,609.
USPTO; Final Office Action dated Dec. 18, 2013 in U.S. Appl. No. 13/339,609.
USPTO; Notice of Allowance dated Apr. 7, 2014 in U.S. Appl. No. 13/339,609.
USPTO; Office Action dated Feb. 13, 2014 in U.S. Appl. No. 13/411,271.
USPTO; Office Action dated Jul. 31, 2014 in U.S. Appl. No. 13/411,271.
USPTO; Final Office Action dated Jan. 16, 2015 in U.S. Appl. No. 13/411,271.
USPTO; Restriction Requirement dated Oct. 29, 2013 in U.S. Appl. No. 13/439,528.
USPTO; Office Action dated Feb. 4, 2014 in U.S. Appl. No. 13/439,528.
USPTO; Final Office Action dated Jul. 8, 2014 in U.S. Appl. No. 13/439,528.
UPPTO; Notice of Allowance dated Oct. 21, 2014 in U.S. Appl. No. 13/439,528.
USPTO; Office Action dated May 23, 2013 in U.S. Appl. No. 13/465,340.
USPTO; Final Office Action dated Oct. 30, 2013 in U.S. Appl. No. 13/465,340.
USPTO; Notice of Allowance dated Feb. 12, 2014 in U.S. Appl. No. 13/465,340.
USPTO; Office Action dated Dec. 20, 2013 in U.S. Appl. No. 13/535,214.
USPTO; Final Office Action dated Jun. 18, 2014 in U.S. Appl. No. 13/535,214.
USPTO; Notice of Allowance dated Oct. 23, 2014 in U.S. Appl. No. 13/535,214.
USPTO; Non-Final Office Action dated Aug. 8, 2014 in U.S. Appl. No. 13/563,066.
USPTO; Final Office Action dated Feb. 12, 2015 in U.S. Appl. No. 13/563,066.
USPTO; Non-Final Office Action dated Oct. 15, 2014 in U.S. Appl. No. 13/597,043.
USPTO; Non-Final Office Action dated Feb. 12, 2015 in U.S. Appl. No. 13/597,108.
USPTO; Office Action dated Nov. 15, 2013 in U.S. Appl. No. 13/612,538.
USPTO; Office Action dated Jul. 10, 2014 in U.S. Appl. No. 13/612,538.
USPTO; Office Action dated Jun. 2, 2014 in U.S. Appl. No. 13/677,151.
USPTO; Final Office Action dated Nov. 14, 2014 in U.S. Appl. No. 13/677,151.
USPTO; Notice of Allowance dated Feb. 26, 2015 in U.S. Appl. No. 13/677,151.
USPTO; Office Action dated Apr. 24, 2014 in U.S. Appl. No. 13/784,362.
USPTO; Notice of Allowance dated Aug. 13, 2014 in U.S. Appl. No. 13/784,362.
USPTO; Restriction Requirement dated Jun. 26, 2014 in U.S. Appl. No. 13/874,708.
USPTO; Non-Final Office Action dated Oct. 9, 2014 in U.S. Appl. No. 13/874,708.
USPTO; Restriction Requirement dated May 8, 2014 in U.S. Appl. No. 13/791,246.
USPTO; Non-Final Office Action dated Sep. 19, 2014 in U.S. Appl. No. 13/791,246.
USPTO; Non-Final Office Action dated Sep. 12, 2014 in U.S. Appl. No. 13/941,134.
USPTO; Notice of Allowance dated Jan. 20, 2015 in U.S. Appl. No. 13/941,134.
USPTO; Restriction Requirement dated Sep. 16, 2014 in U.S. Appl. No. 13/948,055.
USPTO; Non-Final Office Action dated Oct. 30, 2014 in U.S. Appl. No. 13/948,055.
USPTO; Restriction Requirement Action dated Jan. 28, 2015 in U.S. Appl. No. 14/018,345.
USPTO; Office Action dated May 29, 2014 in U.S. Appl. No. 14/183,187.
USPTO; Final Office Action dated Nov. 7, 2014 in U.S. Appl. No. 14/183,187.
USPTO; Non-Final Office Action dated Feb. 12, 2015 in U.S. Appl. No. 14/457,058.
USPTO; Non-Final Office Action dated Jan. 16, 2015 in U.S. Appl. No. 14/563,044.
PCT; International Search report and Written Opinion dated Nov. 12, 2010 in Application No. PCT/US2010/030126.
PCT; International Preliminary Report on Patentability dated Oct. 11, 2011 Application No. PCT/US2010/030126.
PCT; International Search report and Written Opinion dated Jan. 12, 2011 in Application No. PCT/US2010/045368.
PCT; International Search report and Written Opinion dated Feb. 6, 2013 in Application No. PCT/US2012/065343.
PCT; International Search report and Written Opinion dated Feb. 13, 2013 in Application No. PCT/US2012/065347.
Chinese Patent Office; Office Action dated Jan. 10, 2013 in Application No. 201080015699.9.
Chinese Patent Office; Office Action dated Jan. 12, 2015 in Application No. 201080015699.9.
Chinese Patent Office; Notice on the First Office Action dated May 24, 2013 in Application No. 201080036764.6.
Chinese Patent Office; Notice on the Second Office Action dated Jan. 2, 2014 in Application No. 201080036764.6.
Chinese Patent Office; Notice on the Third Office Action dated Jul. 1, 2014 in Application No. 201080036764.6.
Chinese Patent Office; Notice on the First Office Action dated Feb. 8, 2014 in Application No. 201110155056.
Chinese Patent Office; Notice on the Second Office Action dated Sep. 16, 2014 in Application No. 201110155056.
Chinese Patent Office; Notice on the Third Office Action dated Feb. 9, 2015 in Application No. 201110155056.
Japanese Patent Office; Office Action dated Jan. 25, 2014 in Application No. 2012-504786.
Japanese Patent Office; Office Action dated Dec. 1, 2014 in Application No. 2012-504786.
Taiwan Patent Office; Office Action dated Jul. 4, 2014 in Application No. 099110511.
Taiwan Patent Office; Office Action dated Dec. 30, 2014 in Application No. 099114330.
Taiwan Patent Office; Office Action dated Dec. 19, 2014 in Application No. 099127063.
Chang et al. Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric; IEEE Electron Device Letters; Feb. 2009; 133-135; vol. 30, No. 2; IEEE Electron Device Society.
Koutsokeras et al. Texture and Microstructure Evolution in Single-Phase TixTal-xN Alloys of Rocksalt Structure. Journal of Applied Physics, 110, pp. 043535-1-043535-6, (2011).
Maeng et al. Electrical properties of atomic layer disposition Hf02 and HfOxNy on Si substrates with various crystal orientations, Journal of the Electrochemical Society, 2008-04, p. H267-H271, vol. 155, No. 4, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea.
Novaro et al. Theoretical Study on a Reaction Pathway of Ziegler-Natta-Type Catalysis, J. Chem. Phys. 68(5), Mar. 1, 1978 p. 2337-2351.
USPTO; Final Office Action dated Apr. 15, 2015 in U.S. Appl. No. 13/187,300.
USPTO; Final Office Action dated Mar. 20, 2015 in U.S. Appl. No. 13/312,591.
USPTO; Notice of Allowance dated May 14, 2015 in U.S. Appl. No. 13/312,591.
USPTO; Final Office Action dated Mar. 13, 2015 in U.S. Appl. No. 13/597,043.
USPTO; Final Office Action dated Jun. 1, 2015 in U.S. Appl. No. 13/597,108.
USPTO; Non-Final Office Action dated May 28, 2015 in U.S. Appl. No. 13/651,144.
USPTO; Non-Final Office Action dated Apr. 3, 2015 in U.S. Appl. No. 13/677,133.
USPTO; Final Office Action dated Mar. 25, 2015 in U.S. Appl. No. 13/791,246.
USPTO; Notice of Allowance dated Mar. 10, 2015 in U.S. Appl. No. 13/874,708.
USPTO; Restriction Requirement dated Apr. 30, 2015 in U.S. Appl. No. 13/941,216.
USPTO; Non-Final Office Action dated Apr. 7, 2015 in U.S. Appl. No. 14/018,345.
USPTO; Non-Final Office Action dated Apr. 28, 2015 in U.S. Appl. No. 14/040,196.
USPTO; Non-Final Office Action dated Mar. 19, 2015 in U.S. Appl. No. 14/079,302.
USPTO; Non-Final Office Action dated Mar. 19, 2015 in U.S. Appl. No. 14/166,462.
USPTO; Non-Final Office Action dated Mar. 16, 2015 in U.S. Appl. No. 14/183,187.
USPTO; Non-Final Office Action dated Mar. 16, 2015 in U.S. Appl. No. 29/447,298.
Bearzotti, et al., “Fast Humidity Response of a Metal Halide-Doped Novel Polymer,” Sensors and Actuators B, 7, pp. 451-454, (1992).
Crowell, “Chemical methods of thin film deposition: Chemical vapor deposition, atomic layer deposition, and related technologies,” Journal of Vacuum Science & Technology A 21.5, (2003): S88-S95.
Varma, et al., “Effect of Mtal Halides on Thermal, Mechanical, and Electrical Properties of Polypyromelitimide Films,” Journal of Applied Polymer Science, vol. 32, pp. 3987-4000, (1986).
USPTO; Final Office Action dated Aug. 12, 2015 in U.S. Appl. No. 12/754,223.
USPTO; Non-Final Office Action dated Jun. 17, 2015 in U.S. Appl. No. 13/283,408.
USPTO; Notice of Allowance dated Oct. 6, 2015 in U.S. Appl. No. 13/411,271.
USPTO; Notice of Allowance dated Jun. 12, 2015 in U.S. Appl. No. 13/563,066.
USPTO; Notice of Allowance dated Jul. 16, 2015 in U.S. Appl. No. 13/563,066.
USPTO; Notice of Allowance dated Aug. 28, 2015 in U.S. Appl. No. 13/597,043.
USPTO; Notice of Allowance dated Aug. 4, 2015 in U.S. Appl. No. 13/677,133.
USPTO; Non-Final Office Action dated Jul. 30, 2015 in U.S. Appl. No. 13/941,216.
USPTO; Non-Final Office Action dated Jun. 29, 2015 in U.S. Appl. No. 13/966,782.
USPTO; Final Office Action dated Sep. 14, 2015 in U.S. Appl. No. 14/018,345.
USPTO; Notice of Allowance dated Sep. 11, 2015 in U.S. Appl. No. 14/040,196.
USPTO; Final Office Action dated Sep. 1, 2015 in U.S. Appl. No. 14/079,302.
USPTO; Notice of Allowance dated Sep. 3, 2015 in U.S. Appl. No. 14/166,462.
USPTO; Notice of Allowance dated Aug. 31, 2015 in U.S. Appl. No. 14/183,187.
USPTO; Non-Final Office Action dated Sep. 22, 2015 in U.S. Appl. No. 14/219,839.
USPTO; Final Office Action dated Jul. 14, 2015 in U.S. Appl. No. 14/457,058.
USPTO; Final Office Action dated Jul. 16, 2015 in U.S. Appl. No. 14/563,044.
USPTO; Notice of Allowance dated Oct. 15, 2015 in U.S. Appl. No. 14/563,044.
USPTO; Non-Final Office Action dated Oct. 1, 2015 in U.S. Appl. No. 14/571,126.
USPTO; Notice of Allowance dated Jul. 6, 2015 in U.S. Appl. No. 29/447,298.
Gupta et al., “Conversion of Metal Carbides to Carbide Derived Carbon by Reactive Ion Etching in Halogen,” Mechanical Engineering, Auburn University, SPIE vol. 6223, (2015).
Krenek et al., “IR Laser CVD of Nanodisperse Ge-Si-Sn Alloys Obtained by Dielectric Breakdown of GeH/4/SiH4/SnH4 Mixtures,” Nanocon, (2014).
Moeen, “Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications,” Licentiate Thesis in Information and Communication Technology, (2015).
Radamson et al., “Growth of Sn-Alloyed Group IV Materials for Photonic and Electronic Applications,” Manufacturing Nanostructures, 5, 129-144, (Year N/A).
Wirths et al., “SiGeSn Growth Studies Using Reduced Pressure Chemical Vapor Deposition Towards Optoelectronic Applications,” This Solid Films, 557, 183-187, (2014).
Related Publications (1)
Number Date Country
20150096973 A1 Apr 2015 US
Continuations (1)
Number Date Country
Parent 13535214 Jun 2012 US
Child 14563044 US