Claims
- 1. A method of forming an array of focusing elements for use in a lithography system, said method comprising the steps of:
providing a substrate; conducting lithography on said substrate at a first location using a first set of exposure characteristics to form a first resist area; and conducting lithography on said substrate at a second location using a second set of exposure characteristics to form a second resist area, said second resist area having thickness that is different than said first resist area.
- 2. The method as claimed in claim 1, wherein said substrate is formed of hydrogen silsesquioxane.
- 3. The method as claimed in claim 1, wherein said step of conducting lithography on said substrate at said first location involves the use of electron beam lithography.
- 4. The method as claimed in claim 1, wherein said step of conducting lithography on said substrate at said first location involves the use of x-ray lithography.
- 5. The method as claimed in claim 1, wherein said first resist area and said second resist area include SiO2.
- 6. The method as claimed in claim 1, wherein said first resist area and said second resist area are transparent.
- 7. The method as claimed in claim 1, wherein said first resist area and said second resist area form at least part of a Fresnel zone plate.
- 8. The method as claimed in claim 1, wherein said first resist area and said second resist area form at least part of a blazed zone plate.
- 9. The method as claimed in claim 1, wherein first resist area and said second resist area form at least part of an apodized zone plate.
- 10. A method of forming an array of focusing elements for use in a maskless lithography system, said method comprising the steps of providing a substrate including hydrogen silsesquioxane, and providing a first pattern via lithography in said substrate, said first pattern including focusing elements for said maskless lithography system.
- 11. The method as claimed in claim 10, wherein said step of providing a first pattern via lithography in said substrate involves the use of at least one of electron beam lithography or x-ray lithography.
- 12. The method as claimed in claim 10, wherein said first pattern provides at least one blazed focusing element.
- 13. A method of forming an array of focusing elements for use in a lithography system, said method comprising the steps of:
providing a first pattern via lithography in a substrate; depositing a conductive absorber material on said substrate; applying an electrical potential to at least a first portion of said conductive absorber material, leaving a second portion of said conductive material with a different electrical potential; and etching said second portion of said conductive material to provide a first pattern on said substrate that is aligned with said first portion of said conductive absorber material.
- 14. The method as claimed in claim 13, wherein said substrate is formed of hydrogen silsesquioxane.
- 15. The method as claimed in claim 13, wherein said step of providing a first pattern via at least one of electron beam lithography or x-ray lithography.
- 16. The method as claimed in claim 13, wherein said conductive absorber material is chromium.
- 17. The method as claimed in claim 13, wherein said first pattern includes an array of optical elements.
- 18. The method as claimed in claim 13, wherein said first pattern includes an array of blazed zone plates.
- 19. A method of forming an array of focusing elements for use in a lithography system, said method comprising the steps of:
providing a first pattern via lithography in a substrate including hydrogen silsesquioxane; depositing a conductive absorber material on said substrate; applying an electrical potential to at least a first electrically continuous portion of said conductive absorber material, leaving a second electrically discontinuous portion of said conductive material with a different electrical potential; and wet etching said second portion of said conductive material to provide a first pattern on said substrate that is aligned with said first portion of said conductive absorber material, said first pattern including an array of focusing elements for the lithography system.
- 20. The method as claimed in claim 19, wherein said step of providing said first pattern on said substrate involves electron beam lithography.
PRIORITY
[0001] This application claims priority to U.S. Provisional Application Ser. No. 60/415,720 filed Oct. 3, 2002. This invention was made with support from the United States government under Grant No. DAAD19-01-1-0330, and the United States government has certain rights to the invention.
Provisional Applications (1)
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Number |
Date |
Country |
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60415720 |
Oct 2002 |
US |