The field of the invention is that of maskless photolithography more precisely implementing the structuring by laser direct writing of photosensitive materials.
Indeed, the device and the method according to the invention can, for example, be used for the fabrication of electronic or optoelectronic components.
The device and the method according to the invention is directly applicable in the field of the microelectronics in order to notably implement a method known by the term “lift-off”.
This technique is a method that is well known in the field of microelectronics. It allows a thin film deposited onto a substrate to be structured without having to etch the materials forming the film. This technique is referred to as “additive”, as opposed to “subtractive”, because it does not comprise a step for direct etching of the materials forming the film. This technique is especially useful for the structuring of the metal layers whose etching solutions are sometimes complex and/or incompatible with the materials that are present.
“Lift-off” consists in forming the inverse image of the pattern to be formed on a substrate by means of a “stencil” layer. This stencil layer covers certain regions of the substrate and leaves other ones exposed. The film to be structured is subsequently deposited on top of the “stencil” layer. Then, the stencil layer is dissolved in a liquid. The dissolution of the stencil layer leads to the lifting off of the film deposited on its surface. The key point of the lift-off resides in the profile of the edges of the stencil layer. These edges must imperatively be inclined so as to create a rupture in the deposited film in order to allow the dissolution of the stencil layer.
The advantages of this “lift off” technique are:
In the field of lithography by masking, the stencil layer may be composed of:
One of the conditions for the “lift-off” to work well is the provision of a clean break between the layer of material 5 deposited on the surface of the stencil and the layer of material 2 deposited on the substrate 1. This separation allows the solvent to come into contact with the stencil layer and to completely dissolve it. In order to provide this break, the edge of the resist opened at the step C must exhibit a profile in the shape of a “visor” guaranteeing the success of the “lift-off”. This is understood to mean an inclined profile with an inverted slope. The inverted slope does not allow the adhesion of the layer 5 on its sides. In the field of photolithography by masking, this technique is fully controlled.
However, there exist other photolithographic techniques such as laser direct-write photolithography. This laser direct-write technology allows, amongst other things, fast prototyping and customized components to be fabricated in small and medium volumes.
This technology relates to many technical sectors such as surface microstructuring, microfluidics, microelectronics, sensors, etc. Several companies have developed the method of laser direct writing with different technical approaches. The key technical points that differentiate these companies relate in particular to the conditioning of the laser beam and the management of the writing which may be obtained either by displacement of the laser beam, or by displacement of the substrate.
Thus, the company Heidelberg has developed a laser direct-write unit which comprises a system for deflection of the laser beam associated with a device displacing the substrate under the beam. The writing method developed by Heidelberg is referred to as a “scanning system” and consists in covering the whole surface of the substrate with the beam irrespective of the structuring to be carried out. The depth of field of the system developed by Heidelberg is limited by the deflection system.
The French company KLOE has developed a laser writing system which differs from that of the company Heidelberg in the following two points:
The writing system 10 essentially comprises two main parts:
The writing system also comprises control means which are:
The whole system is controlled by a computer 40 which manages the UV source, the ignition and the extinction of the writing beam and coordinates the displacement of the translation tables.
The aim of the optical part is to supply a focused laser beam having an intensity profile that is as flat as possible in order to generate a uniform illumination associated with a large depth of field.
The laser source 20 is the optical element the furthest upstream in the assembly; its characteristics determine the quality of writing and influence the optical processing chain required. This source must notably have the following characteristics:
The device for conditioning the beam is needed to obtain a small circular spot at the focal point of the focusing lens 23. One possible arrangement consists in performing a spatial filtering by means of a circular aperture 22 diffracting the light. This circular aperture carries out the truncation of the incident beam and allows a constant intensity profile to be obtained at the focal point. Thus, light beams are obtained whose energy distribution is substantially constant. In addition, the size of the light spot at the focal point can be modified by simply changing the dimension of the calibrated aperture 22 without changing the focusing lens. However, the loss of light intensity in passing through the diffraction hole is considerable, the hole only allowing one percent of the incident energy to pass. In order to minimize these losses, a pre-focusing lens 21 can be positioned so as to concentrate the beam in passing through the diffraction hole 22.
One of the drawbacks of photolithography by laser direct writing is that it is difficult to obtain and to dynamically control the desired profiles in the shape of a “visor” guaranteeing the success of the “lift-off” process. The device according to the invention allows profiles of layers in the shape of a “visor” to be simply obtained without fundamentally modifying the existing systems.
More precisely, one subject of the invention is a laser direct-write system designed to form structures of the mesa type with an inverted slope on a substrate. The invention also relates to the use of such a system for the fabrication of electronic components by the technique known by the term “lift-off” on a plane substrate comprising one or more plane photosensitive layers.
Thus, one subject of the invention is a laser direct-write system designed to form structures of the mesa type, said system comprising at least:
Preferably, the writing laser beam originates from a laser source with a short wavelength emitting in the UV, in order to obtain a focused beam allowing the formation of patterns with micrometric dimensions. Amongst the lasers envisioned are notably laser diodes, gas lasers and solid lasers.
The choice of the focusing optics is not limiting. It may, for example, be a set of microscope focusing optics. It may have a variable focal length. The inclination of the sidewalls formed in the resist can thus be adjusted.
The optical or mechanical shuttering means may be chosen from amongst an opaque thin plane blade with a straight edge or an apodization blade, absorption filters, reflection filters, interference filters, neutral-density filters and polarizing filters.
The invention also relates to the use of a system such as defined hereinabove for the formation of inclined slopes in a resist.
In particular, the invention relates to the use of a system such as defined hereinabove for the performance of a step of a photolithographic method, notably a “lift-off” step.
The invention then consists in a method for laser direct writing on a substrate covered by a resist consisting in:
Several embodiments are possible. In a first variant, the optical axis of the focusing optics is perpendicular to the plane of the photosensitive layers and the system comprises means for partial shuttering of the optical beam situated in the neighborhood of the focusing optics. The shuttering means are either an opaque thin plane blade with a straight edge or an apodization blade allowing an optical beam to be generated on the plane of the plane photosensitive layers such that the useful part of the optical beam is inclined on the plane of the photosensitive layers without diffraction fringes. Advantageously, the shuttering means are mounted onto at least one table being adjustable in translation and/or in rotation.
In a second variant, the optical beam has radial symmetry down to the level of the plane of the plane photosensitive layers, the optical axis of the focusing optics being perpendicular to the plane of the photosensitive layers, the optical beam being out of focus on the plane of the plane photosensitive layers.
Advantageously, the focusing optics introduces spherical aberration into the optical beam in such a manner that the caustic of spherical aberration on the plane of the plane photosensitive layers comprises more energy at the periphery than at its center.
The invention also relates to the use of a laser direct-write system as previously described for the performance of a step of a photolithographic method.
Lastly, it relates to a method of laser direct writing on a substrate covered by a resist consisting in:
The invention will be better understood and other advantages will become apparent upon reading the description that follows presented by way of non-limiting example and thanks to the appended figures amongst which:
The general principle of the device according to the invention is to introduce into the writing system optical or mechanical means configured such that the useful part of the optical beam is inclined on the plane of the photosensitive layers in order to create profiles with an inverted slope within said layers, the useful part of the optical beam being the part of the optical beam which effectively contributes to creating said profiles.
Several embodiments are possible. They are shown in
In a first variant illustrated in
In a second variant illustrated in
Number | Date | Country | Kind |
---|---|---|---|
1058832 | Oct 2010 | FR | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/EP2011/068168 | 10/18/2011 | WO | 00 | 4/28/2013 |