The subject matter described herein relates to systems and methods for preparation of epitaxially grown textured thick films.
A thick film is particularly useful in solar cell applications because a thicker film can absorb more photons and thereby produce more electricity. A solar cell or photovoltaic cell is a device that converts light energy into electrical energy. A solar or photovoltaic cell generates electricity in a light absorbing material upon exposure of the material to light. When light energy strikes the solar cell, the photovoltaic effect produces electricity.
The light absorbing material is typically a semiconductor material. There are currently several different semiconducting materials used in solar cells and a common material is silicon. The most efficient form of silicon (e.g., to capture the greatest amount of energy from the incident light) is as a single crystal silicon. However, single-crystal silicon wafers are costly. In many photovoltaic applications, the silicon used is a relatively thick polycrystalline or amorphous silicon film. For example, a film having a thickness of about 1 μm to up to 20 μm can be used. Polycrystalline silicon or amorphous silicon can be used in an attempt to reduce manufacturing costs. However, the resulting cells are not as efficient as cells using single crystal silicon.
Silicon thin-films can be made through chemical vapor deposition (CVD) (for example plasma-enhanced (PE-CVD)) from, for example, silane gas and hydrogen gas. Depending on the deposition's parameters, this can yield amorphous silicon (a-Si) or polycrystalline silicon (poly-Si). The solar cells made from these materials tend to have lower energy conversion efficiency than bulk silicon, but are also less expensive to produce and they can be produced on large surfaces.
The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films.
In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.
In one or more embodiments, the seed layer includes a polycrystalline silicon.
In one or more embodiments, the top layer includes amorphous silicon.
In one or more embodiments, the top layer has a predominant surface crystallographic orientation of {111} orientation.
In one or more embodiments, the top layer has a predominant surface crystallographic orientation of {100} orientation.
In one or more embodiments, the top layer has a thickness that is greater than the seed layer.
In one or more embodiments, the seed layer is deposited using a technique selected from the group consisting of zone melt recrystallization (ZMR), solid phase recrystallization, chemical vapor deposition (CVD), sputtering, evaporation, surface-energy-driven secondary grain growth (SEDSGG), mixed-phase solidification and pulsed laser crystallization methods.
In one or more embodiments, the method includes backside irradiating the seed layer using pulsed irradiation to increase the texture of the seed layer through the thickness of the seed layer.
In one or more embodiments, the top layer is deposited using a method selected from the group consisting of low pressure chemical vapor deposition (CVD), plasma enhanced CVD, physical deposition techniques and sputter deposition.
In one or more embodiments, the film includes a material selected from the group consisting of metal and semiconductor materials.
In one or more embodiments, the top layer has a thickness in the range of 1 μm to about 20 μm.
In one or more embodiments, the seed layer has a thickness in the range of 50 nm to about 1 μm.
In one or more embodiments, the step of irradiating the film includes irradiating with a continuous wave or excimer laser.
In one or more embodiments, the method includes heating the film from the top surface of the film.
In one or more embodiments, heating includes co-irradiation from front side of film.
In one or more embodiments, heating includes contact with heated surface.
In one or more embodiments, the irradiation melts the entire top layer.
In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is transparent to laser irradiation, said film including a seed layer having predominant surface crystallographic orientation; a top layer disposed above the seed layer; and a metal layer disposed below the seed layer; irradiating the film using a pulsed laser at a wavelength absorbable by the metal to heat the metal layer, said heat being transferred to the top layer to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; re-solidifying the first portion of the top layer to form a crystalline layer epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.
In one or more embodiments, the step of irradiating is directed through the front side of the film.
In one or more embodiments, a portion of the light is absorbed by the film.
In one or more embodiments, the step of irradiating is directed through the back side of the film.
In one or more embodiments, the method includes providing a buffer layer between the seed layer and the metal film.
In one or more embodiments, a method of making a solar cell including preparing a crystalline silicon layer by providing a film for crystallization on a substrate, wherein at least a portion of the substrate is transparent to laser irradiation, said film including a seed layer including crystal grains having a surface texture; and a top layer disposed above the low defect density seed layer, said top layer having a thickness that is greater than the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a portion of the low quality layer at an interface with the seed layer, wherein crystals grow epitaxially from the seed layer; and disposing the polycrystalline silicon layer between two electrodes.
In one or more embodiments, the top layer has a thickness that is greater than the seed layer.
In one or more embodiments, a system for preparing a thick crystalline film includes a substrate, wherein at least a portion of the substrate is transparent to laser irradiation, said film including a film for crystallization disposed upon the substrate, the film including a seed layer including crystal grains having a surface texture; and a top layer disposed above the seed layer; means for irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and means for growing the first portion of a crystalline material to form an epitaxial layer on the seed layer, thereby releasing heat sufficient to melt an adjacent portion of the top layer.
In one or more embodiments, the top layer has a thickness that is greater than the seed layer.
The foregoing and other features of the embodiments described herein will be apparent from the following more particular description, as illustrated in the accompanying drawings.
a-4c are schematic illustrations of a front side irradiation process of a thick film where a metal film is located between the substrate and the seed layer according to one or more embodiments described herein.
Conventionally, the epitaxial growth of thin films is conducted using a chemical vapor deposition (CVD) process performed at high temperatures to ensure high quality reproduction of the seed layer's lattice orientation. However, such processes require the use of substrates that can withstand high temperatures. If transparency of the substrate is also required or desired, as may be the case for solar cells, the substrate needs to be made of quartz or specialized high-temperature glasses. These substrates can be costly and may not be available in large dimensions. In addition, epitaxy via CVD typically may have very low deposition rates.
Previously, epitaxial films have been prepared by depositing a thick defective layer, also referred to herein as a “top layer” (e.g., an amorphous silicon (a-Si) layer or polycrystalline silicon films (p-Si)) on a thin crystalline seed layer (c-Si) and melting the a-Si layer to provide an epitaxially grown layer from the crystalline seed layer using melt-mediated epitaxy. To epitaxially grow the silicon layer, the film is irradiated from the front side, i.e., the non-substrate side of the film, to melt completely the a-Si layer without substantially melting the underlying c-Si layer. Thus, the crystalline layer grows from the interface of the liquid-solid interface between the seed layer and the melt. However, this process can be difficult to control. Because the desired thickness of the a-Si layer is typically greater than that of the seed layer, it is difficult to melt only the deposited a-Si layer. This difficulty can arise from non-uniformities in the irradiation process including pulse-to-pulse energy variation. Significant care is required to avoid undesired melting of the seed layer along with the a-Si layer. Furthermore, the melt and grow process may need to be carried out multiple times. Typically, the thickness of the a-Si layer can range from 20 nm to 80 nm or more, e.g. 500 nm. Since the films are deposited on crystalline Si seed layers that are conductive to heat, higher energy density radiation may be needed to fully melt the film than if it were deposited on less conductive substrates, such as silicon dioxide. The high energy density that is required to deposit sufficient heat to completely melt the defective film can lead to damaging of the surface, for example through evaporation or through agglomeration. This limits the maximum thickness of the defective layer that can be fully molten without inducing damage. This is yet another reason why multiple depositions and radiations may be needed to reach satisfactory thickness of the photon absorption layer. Thin film solar cells typically have silicon layers on the order of about 1 μm to about 20 μm or more. Thus, many iterations of a-Si deposition and liquid phase epitaxial growth are required to obtain the desired thickness. This process can be time-consuming, costly, and inefficient.
The laser-irradiation epitaxial process, as described herein, provides good quality epitaxy and is compatible with low temperature substrates such as low temperature glass. The method includes inducing a limited degree of melting in the film and triggering a self-sustained process known as explosive crystallization. Explosive crystallization can take place as a result of the difference in melting temperatures of amorphous and crystalline materials. Amorphous silicon has a lower melting temperature than crystalline silicon (Ta-Si<Tc-Si), which helps to inhibit the melting of the seed crystalline layer and to promote the preferential melting of the amorphous silicon layer. Further, amorphous silicon is in a meta-stable state and has a higher free energy. Conversion of a meta-stable material such as amorphous silicon into a more stable material such as crystalline silicon (as a result of melt irradiation, followed by crystallization) results in a net reduction of energy, and therefore releases latent energy upon crystallization. In a crystallization process, this can translate into heat. Since crystallization of the amorphous materials results in the release of energy, it is possible to use the released energy to melt adjacent amorphous regions and to cause further crystallization. In many instances, the crystallization process can be self-sustaining and only need be initiated for crystallization to propagate through the amorphous body.
Aspects of the method are described with reference to
The first step includes providing a seed layer on a substrate (105 in
Low defect density seed layers provide good substrates from which to epitaxially grow a low defect density (epitaxial) thick film. Thus, large grained, crystallographically oriented Si films can be produced having a low defect density. Low defect density films are characterized by a low number of grain boundaries and few intergrain defects, e.g., significantly less than 109 defect/μm2. The seed layer can be relatively thin, e.g., between about 50 and 1,000 nm or between about 100 and 200 nm.
Conventional methods of obtaining a precursor textured film (which can be subsequently treated to form a large crystalline grain film) include zone melt recrystallization (ZMR), solid phase crystallization, direct deposition techniques (CVD, sputtering, evaporation), surface-energy-driven secondary grain growth (SEDSGG) and pulsed laser crystallization (multiple-pulse ELA) methods. Zone melt irradiation using a radiative source of heating can produce silicon films having {100} surface orientation as described by M. W. Geis et. al., “Zone-Melting recrystallization of Si films with a moveable-strip-heater oven,” J. Electro-Chem. Soc. 129, 2812 (1982). Other methods for producing (100) textured films include CVD and low-pressure CVD. See, e.g., J. Electrochem. Soc. Vol. 134, NO. 134, pp. 2541-2545 (October, 1987); J. Appl. Phys., Vol. 73, No. 12, pp. 8402-8411 (June, 1993); and J. Matl. Sci. Lett., Vol. 7, pp. 247-250 (1988), or by aluminum induced crystallization; see e.g., O. Nast, Appl. Phys. Lett. 73, No 22, pp. 3214-6 (November 1998). It is envisioned that other texture-inducing methods can also be used in a similar way to generate the textured precursors.
The formation of textured films having a low number of grain boundaries, e.g., large crystalline grains, and a low defect density for use as a seed layer, has been previously described in an application by James Im, U.S. Ser. No. 10/994,205, filed Nov. 18, 2004, and entitled “System and Methods for Creating Crystallographic Controlled Orientation Controlled PolySilicon Films,” the contents of which are incorporated herein in their entirety by reference. In that process, a film was pretreated to introduce a desired texture into the film and then crystallized using sequential lateral solidification (SLS) laser irradiation to form the enhanced grain growth that is typical of SLS. U.S. Pat. No. 6,322,625, entitled “Method and Tool for Generating Countersunk Holes in Composite Materials,” as filed Nov. 18, 1981; U.S. Pat. No. 6,368,945, entitled “Method and System for Providing a Continuous Motion Sequential Lateral Solidification,” as filed Mar. 16, 2000; U.S. Pat. No. 6,555,449, entitled “Methods for Producing Uniform Large-Grained and Grain Boundary Location Manipulated Polycrystalline Thin Film Semiconductors Using Sequential Lateral Solidification,” as filed Sep. 3, 1999; U.S. Pat. No. 6,573,531, entitled “Systems and Methods Using Sequential Lateral Solidification for Producing Single or Polycrystalline Silicon Thin Films at Low Temperatures,” as filed Sep. 3, 1999; and U.S. Provisional Patent Application No. 61/111,518, entitled “Flash Light Annealing for Thin Films,” as filed on Nov. 5, 2008, issued to Dr. James Im, the entire disclosures of which are incorporated herein by reference, and which are assigned to the common assignee of the present application, describe such SLS systems and processes. In one or more embodiments, the process of pre-treating the film is a mixed-phase solidification (MPS) process. This is a process that results in very low intragrain defect density in the crystalline structure.
Once the seed layer having the desired intragrain defect density and density of grain boundaries is provided, an amorphous or other low quality crystalline film is deposited on the seed layer (110 in
The amorphous layer can be many times thicker than the seed layer and can be, for example, about 1 μm to about 20 μm thick or about 2-6 μm thick or as high as 10-20 μm thick. The amorphous layer can be as thick as desired in the final product, for example, a solar panel.
Although the high defect or top layer will typically be thicker than the seed layer, it doesn't need to be thicker, e.g., the seed layer can be very thick (˜1 μm) and it can be processed in multiple steps to provide a low defect density film. For example, 1 μm of the defective silicon layer, i.e., top layer, can be deposited onto a seed layer followed by back side irradiation to induce epitaxy in the film.
The seed layer and top layer are supported on a substrate that is transparent to laser energy over at least a portion of its area. By “transparent to laser energy,” it is meant that laser energy used in the treatment of the films described herein is not substantially absorbed by the substrate. Thus, laser energy is selectively absorbed by the film, with the concomitant heating and melting of at least a portion of the film. Irradiation from the back side of the substrate provides control over the extent of melting of the amorphous layer. Because the crystalline material of the seed layer melts at a higher temperature, it is possible to deposit enough energy to pass heat through the seed layer to induce melting of the defective layer without fully melting the seed layer.
According to the embodiments disclosed herein, an initial region of the amorphous layer deposited above a crystalline seed layer is heated via radiation. The melting of the top layer is induced from the side of the a-Si that is in contact with the c-Si while the rest of the a-Si remains solid. As the seed layer is typically deposited or grown directly on the substrate, the irradiation typically occurs from the substrate side or back side of the film, as is shown in
Generally, the explosive crystallization process will continue until quenched or until all the amorphous material is transformed into crystalline material. Quenching is known to result in lowering of the temperature at the growth front and formation of defects and ultimately of halting of the process. Quenching is often the result of nearby conductive materials and/or nearby substrates. In the current configuration, however, significant quenching of the film is not to be expected because the fraction of the heat that is released at the growth front and that diffuses ‘upwards’ toward and into the remaining defective silicon is trapped therein. Also, the defective silicon typically has low thermal conductivity so that the heat does not quickly spread out over the film, but rather stays within the vicinity of the melting interface.
While the initial interface between the seed layer and the defective top layer may be rough, as, for example, with films obtained via MPS, the explosive crystallization process is expected to result in gradually smoothening of the melting and solidification interfaces. For those regions where the seed layer is protruding into the defective layer, the explosive crystallization front (i.e., the closely spaced melting and solidification fronts) will initially protrude into the defective layer as well and will therefore cool down more rapidly than elsewhere where the front may be planar or even curved negatively. As a result, the front is expected to slow down with respect to other regions and the overall front is expected to flatten/smoothen.
The laser source used to trigger the melting process can be any pulsed or chopped laser source that emits light to which the substrate is substantially transparent but absorbable by the film stack. For example, the laser may be a CW laser or an excimer laser. Additionally, light having a wavelength with an absorption depth on the order of or larger than the thickness of the precursor film may be used to promote heat absorption in the amorphous layer and reduce the heat absorbed in the seed layer. This can increase the process window in which a substantially continuous liquid film is created in the amorphous layer while a substantially continuous solid film remains in the crystalline precursor. Such wavelengths can be, for example, around 500 nm or longer as emitted by, for example, a frequency-doubled Nd:YVO4 or Nd:YAG laser (532 nm), or even longer wavelengths. The laser energy and pulse duration are sufficient to melt a portion of the amorphous layer adjacent to the seed layer, in some embodiments, in a single laser pulse.
In one or more embodiments, the laser pulse melts a portion of the amorphous layer and induces explosive crystallization to transform a thick Si layer into a layer having crystalline properties in only a single laser pulse. The embodiments disclosed herein preferably use flood irradiation. Because of the beam used for flood irradiation, the edge region of the film can have a poorer quality as there will be lateral explosive crystallization there as well. The lateral part of the explosive front will quench more rapidly because of the two dimensional nature of the temperature profile. As such, there will be defect formation and defective growth. Upon overlapping with a second radiation pulse, this defective region, being already crystalline (albeit defectively), will not remelt. As such, a defective crystalline region with a short minority carrier lifetime will remain.
To alleviate some of these concerns, a flood irradiation beam with sharp edges and a substantially uniform energy density is used. Such a beam can be obtained using SLS equipment or line-beam ELA equipment. For those embodiments where the pulse is smaller than the area of the film, the defective regions can be positioned in areas where the film is later removed to create vias between the front contact of one cell and the back contact of the neighboring cell. The vias can be used to create cells in series. Some embodiments use flood irradiation with radiation areas as large as the panel (or a significant part thereof), for example, arrays of flash lamps or diode lasers. When the long wavelength is not sufficiently absorbed by the Si film, one can use metal layers under the seed layer and above the substrate, as discussed in more detail below. Further, these metal layers can be used to perform long wavelength flood irradiation from the top of the film.
In some embodiments, the film can melt completely upon backside radiation. Experimental work shows that for thin a-Si films (i.e., 200 nm on a 100 nm seed layer obtained via MPS), upon backside radiation, the a-Si was molten completely, while the seed layer remained at least partially intact. The texture reproduction was good with very little defect formation observed. A complete melting of the a-Si can be induced for a-Si films that are sufficiently thick for making a solar cell. This could be the case when longer wavelength radiation is used so that the absorption length exceeds the seed layer thickness. Also, pre-heating can cause complete melting. Furthermore, top side radiation of moderately absorbed light that is mostly absorbed by a metal layer located between the seed layer and the substrate (and discussed in more detail below) can cause complete melting.
As is discussed above, the amount of energy used to irradiate the film is less than that used in conventional melt-mediated epitaxy processes because only a thin region, and not the entire thick film, is melted. Therefore, a wider range of substrates can be used, including low temperature glasses and the like. For example, the methods disclosed herein can be used with, for example, glass substrates, but also with non-transparent substrates such as metal foils, such as stainless steel, or ceramic substrates.
In other embodiments, additional heat is added to sustain the process. Heating can be accomplished by substrate pre-heating or co-irradiation from the front side. Heat can be introduced to the top layer, for example, by irradiation, furnace pre-heating, a hot plate, or any other conventional source. Heating can reduce the amount of energy needed for irradiation and reduce the exposure of the substrate to damaging levels of heat. It can also be used to modify or control the rate of liquid from propagation through the amorphous top layer. For example, heating the film can reduce crystallization velocity.
This irradiation methodology has the additional benefit of trapping the heat in the film. As crystallization proceeds upwards in the film, the heat that is released upwards of the film gets trapped in a shrinking volume and thus temperature will rise. This temperature rise will result in a more gentle explosive crystallization taking place (e.g., crystallization velocity is decreased) and this will suppress the formation of defects. The crystallization velocity may be further reduced by introducing additional heat, e.g., from the top surface of the film, as noted previously.
In some embodiments, a thin metal film can be deposited under the silicon seed layer.
In embodiments having the thin metal film layer, the silicon film can be irradiated from the top portion of the film, as shown in
While there have been shown and described examples of the disclosed subject matter, it will be readily apparent to those skilled in the art that various changes and modifications may be readily apparent to those skilled in the art that various changes and modifications may be made therein without departing from the scope of the disclosed subject matter as defined by the appended claims. Accordingly, the disclosed subject matter is limited only by the following claims and equivalents thereto.
This application claims the benefit under 35 U.S.C. §119(e) of the following applications, the entire contents of which are incorporated herein by reference: U.S. Provisional Application No. 60/989,729, filed on Nov. 21, 2007, entitled “Methods and Systems for Backside Laser Induced Epitaxial Growth of Thick Film”; and U.S. Provisional Application No. 61/012,229, filed on Dec. 7, 2007, entitled “Methods and Systems for Backside Laser Induced Epitaxial Growth of Thick Film.” All patents, patent applications and patent publications cited herein are hereby incorporated by reference in their entirety. This application is related to the commonly owned and co-pending application filed on even date herewith and entitled “Systems and Methods for Preparing Epitaxially Textured Polycrystalline Films,” the contents of which are incorporated by reference in their entirety.
Number | Name | Date | Kind |
---|---|---|---|
3632205 | Marcy | Jan 1972 | A |
4234358 | Celler et al. | Nov 1980 | A |
4309225 | Fan et al. | Jan 1982 | A |
4382658 | Shields et al. | May 1983 | A |
4456371 | Lin | Jun 1984 | A |
4639277 | Hawkins | Jan 1987 | A |
4653903 | Torigoe et al. | Mar 1987 | A |
4691983 | Kobayashi et al. | Sep 1987 | A |
4727047 | Bozler et al. | Feb 1988 | A |
4758533 | Magee et al. | Jul 1988 | A |
4793694 | Liu | Dec 1988 | A |
4800179 | Mukai et al. | Jan 1989 | A |
4855014 | Kakimoto et al. | Aug 1989 | A |
4870031 | Sugahara et al. | Sep 1989 | A |
4940505 | Schachameyer et al. | Jul 1990 | A |
4970546 | Suzuki et al. | Nov 1990 | A |
4977104 | Sawada et al. | Dec 1990 | A |
5032233 | Yu et al. | Jul 1991 | A |
5061655 | Ipposhi et al. | Oct 1991 | A |
5076667 | Stewart et al. | Dec 1991 | A |
RE33836 | Resor, III et al. | Mar 1992 | E |
5145808 | Sameshima et al. | Sep 1992 | A |
5173441 | Yu et al. | Dec 1992 | A |
5204659 | Sarma | Apr 1993 | A |
5233207 | Anzai et al. | Aug 1993 | A |
5247375 | Mochizuki et al. | Sep 1993 | A |
5281840 | Sarma | Jan 1994 | A |
5285236 | Jain | Feb 1994 | A |
5291240 | Jain | Mar 1994 | A |
5294811 | Aoyama et al. | Mar 1994 | A |
5304357 | Sato et al. | Apr 1994 | A |
5338959 | Kim et al. | Aug 1994 | A |
5373803 | Noguchi et al. | Dec 1994 | A |
5395481 | McCarthy | Mar 1995 | A |
5409867 | Asano | Apr 1995 | A |
5453594 | Konecny | Sep 1995 | A |
5456763 | Kaschmitter et al. | Oct 1995 | A |
5496768 | Kudo | Mar 1996 | A |
5512494 | Tanabe | Apr 1996 | A |
5523193 | Nelson | Jun 1996 | A |
5529951 | Noguchi et al. | Jun 1996 | A |
5571430 | Kawasaki et al. | Nov 1996 | A |
5591668 | Maegawa et al. | Jan 1997 | A |
5663579 | Noguchi | Sep 1997 | A |
5683935 | Miyamoto et al. | Nov 1997 | A |
5710050 | Makita et al. | Jan 1998 | A |
5721606 | Jain | Feb 1998 | A |
5742426 | York | Apr 1998 | A |
5756364 | Tanaka et al. | May 1998 | A |
5766989 | Maegawa et al. | Jun 1998 | A |
5767003 | Noguchi | Jun 1998 | A |
5817548 | Noguchi et al. | Oct 1998 | A |
5844588 | Anderson | Dec 1998 | A |
5858807 | Kawamura | Jan 1999 | A |
5861991 | Fork | Jan 1999 | A |
5893990 | Tanaka | Apr 1999 | A |
5948172 | Neiheisel | Sep 1999 | A |
5948291 | Neylan et al. | Sep 1999 | A |
5960323 | Wakita et al. | Sep 1999 | A |
5986807 | Fork | Nov 1999 | A |
6002523 | Tanaka | Dec 1999 | A |
6014944 | Aklufi et al. | Jan 2000 | A |
6020224 | Shimogaichi et al. | Feb 2000 | A |
6020244 | Thompson et al. | Feb 2000 | A |
6045980 | Edelkind et al. | Apr 2000 | A |
6072631 | Guenther et al. | Jun 2000 | A |
6081381 | Shalapenok et al. | Jun 2000 | A |
6117752 | Suzuki | Sep 2000 | A |
6120976 | Treadwell et al. | Sep 2000 | A |
6130009 | Smith et al. | Oct 2000 | A |
6130455 | Yoshinouchi et al. | Oct 2000 | A |
6135632 | Flint | Oct 2000 | A |
6136632 | Higashi | Oct 2000 | A |
6156997 | Yamazaki et al. | Dec 2000 | A |
6162711 | Ma et al. | Dec 2000 | A |
6169014 | McCulloch | Jan 2001 | B1 |
6172820 | Kuwahara | Jan 2001 | B1 |
6176922 | Aklufi et al. | Jan 2001 | B1 |
6177301 | Jung | Jan 2001 | B1 |
6184490 | Schweizer | Feb 2001 | B1 |
6187088 | Okumura | Feb 2001 | B1 |
6190985 | Buynoski | Feb 2001 | B1 |
6193796 | Yang et al. | Feb 2001 | B1 |
6203952 | O'Brien et al. | Mar 2001 | B1 |
6235614 | Yang et al. | May 2001 | B1 |
6242291 | Kusumoto et al. | Jun 2001 | B1 |
6274488 | Talwar et al. | Aug 2001 | B1 |
6285001 | Fleming et al. | Sep 2001 | B1 |
6300175 | Moon et al. | Oct 2001 | B1 |
6313435 | Shoemaker et al. | Nov 2001 | B1 |
6316338 | Jung et al. | Nov 2001 | B1 |
6320227 | Lee et al. | Nov 2001 | B1 |
6322625 | Im | Nov 2001 | B2 |
6326186 | Kirk et al. | Dec 2001 | B1 |
6326215 | Keen | Dec 2001 | B1 |
6326286 | Park et al. | Dec 2001 | B1 |
6333232 | Kunikiyo et al. | Dec 2001 | B1 |
6341042 | Matsunaka et al. | Jan 2002 | B1 |
6348990 | Igasaki et al. | Feb 2002 | B1 |
6353218 | Yamazaki et al. | Mar 2002 | B1 |
6358784 | Zhang et al. | Mar 2002 | B1 |
6368945 | Im | Apr 2002 | B1 |
6387178 | Geho et al. | May 2002 | B1 |
6388146 | Onishi et al. | May 2002 | B1 |
6388386 | Kunii et al. | May 2002 | B1 |
6392810 | Tanaka et al. | May 2002 | B1 |
6393042 | Tanaka et al. | May 2002 | B1 |
6407012 | Miyasaka et al. | Jun 2002 | B1 |
6410373 | Chang et al. | Jun 2002 | B1 |
6429100 | Yoneda et al. | Aug 2002 | B2 |
6432758 | Cheng et al. | Aug 2002 | B1 |
6437284 | Okamoto et al. | Aug 2002 | B1 |
6444506 | Kusumoto et al. | Sep 2002 | B1 |
6445359 | Ho | Sep 2002 | B1 |
6448612 | Miyazaki et al. | Sep 2002 | B1 |
6451631 | Grigoropoulos et al. | Sep 2002 | B1 |
6455359 | Yamazaki et al. | Sep 2002 | B1 |
6468845 | Nakajima et al. | Oct 2002 | B1 |
6471772 | Tanaka et al. | Oct 2002 | B1 |
6472684 | Yamazaki et al. | Oct 2002 | B1 |
6476447 | Yamazaki et al. | Nov 2002 | B1 |
6479837 | Ogawa et al. | Nov 2002 | B1 |
6482722 | Kunii et al. | Nov 2002 | B2 |
6493042 | Bozdagi et al. | Dec 2002 | B1 |
6495067 | Ono et al. | Dec 2002 | B1 |
6495405 | Voutsas et al. | Dec 2002 | B2 |
6501095 | Yamaguchi et al. | Dec 2002 | B2 |
6504175 | Mei et al. | Jan 2003 | B1 |
6506636 | Yamazaki et al. | Jan 2003 | B2 |
6511718 | Paz de Araujo et al. | Jan 2003 | B1 |
6512634 | Tanaka et al. | Jan 2003 | B2 |
6516009 | Tanaka et al. | Feb 2003 | B1 |
6521492 | Miyasaka et al. | Feb 2003 | B2 |
6526585 | Hill | Mar 2003 | B1 |
6528359 | Kusumoto et al. | Mar 2003 | B2 |
6531681 | Markle et al. | Mar 2003 | B1 |
6535535 | Yamazaki et al. | Mar 2003 | B1 |
6555422 | Yamazaki et al. | Apr 2003 | B1 |
6555449 | Im et al. | Apr 2003 | B1 |
6563077 | Im | May 2003 | B2 |
6573163 | Voutsas et al. | Jun 2003 | B2 |
6573531 | Im et al. | Jun 2003 | B1 |
6577380 | Sposili et al. | Jun 2003 | B1 |
6582827 | Im | Jun 2003 | B1 |
6590228 | Voutsas et al. | Jul 2003 | B2 |
6608326 | Shinagawa et al. | Aug 2003 | B1 |
6621044 | Jain et al. | Sep 2003 | B2 |
6635554 | Im et al. | Oct 2003 | B1 |
6635932 | Grigoropoulos et al. | Oct 2003 | B2 |
6667198 | Shimoto et al. | Dec 2003 | B2 |
6693258 | Sugano et al. | Feb 2004 | B2 |
6734635 | Kunii et al. | May 2004 | B2 |
6741621 | Asano | May 2004 | B2 |
6750424 | Tanaka | Jun 2004 | B2 |
6755909 | Jung | Jun 2004 | B2 |
6784455 | Maekawa et al. | Aug 2004 | B2 |
6830993 | Im et al. | Dec 2004 | B1 |
6858477 | Deane et al. | Feb 2005 | B2 |
6860939 | Hartzell | Mar 2005 | B2 |
6908835 | Sposili et al. | Jun 2005 | B2 |
6916690 | Chang | Jul 2005 | B2 |
6961117 | Im | Nov 2005 | B2 |
6962860 | Yamazaki et al. | Nov 2005 | B2 |
6984573 | Yamazaki et al. | Jan 2006 | B2 |
7029996 | Im et al. | Apr 2006 | B2 |
7078281 | Tanaka et al. | Jul 2006 | B2 |
7078793 | Ruckerbauer et al. | Jul 2006 | B2 |
7091411 | Falk et al. | Aug 2006 | B2 |
7115503 | Im | Oct 2006 | B2 |
7119365 | Takafuji et al. | Oct 2006 | B2 |
7132204 | Jung | Nov 2006 | B2 |
7144793 | Gosain et al. | Dec 2006 | B2 |
7160763 | Im et al. | Jan 2007 | B2 |
7164152 | Im | Jan 2007 | B2 |
7172952 | Chung | Feb 2007 | B2 |
7183229 | Yamanaka | Feb 2007 | B2 |
7187016 | Arima | Mar 2007 | B2 |
7189624 | Ito | Mar 2007 | B2 |
7192479 | Mitani et al. | Mar 2007 | B2 |
7192818 | Lee et al. | Mar 2007 | B1 |
7199397 | Huang et al. | Apr 2007 | B2 |
7217605 | Kawasaki et al. | May 2007 | B2 |
7220660 | Im et al. | May 2007 | B2 |
7297982 | Suzuki et al. | Nov 2007 | B2 |
7311778 | Im et al. | Dec 2007 | B2 |
7318866 | Im | Jan 2008 | B2 |
7326876 | Jung | Feb 2008 | B2 |
7364952 | Im | Apr 2008 | B2 |
7399359 | Im et al. | Jul 2008 | B2 |
7622370 | Im | Nov 2009 | B2 |
7629234 | Bruland | Dec 2009 | B2 |
7645337 | Im et al. | Jan 2010 | B2 |
7691687 | Im | Apr 2010 | B2 |
7700462 | Tanaka et al. | Apr 2010 | B2 |
7709378 | Im | May 2010 | B2 |
7804647 | Mitani et al. | Sep 2010 | B2 |
7964480 | Im et al. | Jun 2011 | B2 |
20010001745 | Im et al. | May 2001 | A1 |
20010029089 | Tanaka | Oct 2001 | A1 |
20010030292 | Brotherton | Oct 2001 | A1 |
20010041426 | Im | Nov 2001 | A1 |
20020083557 | Jung | Jul 2002 | A1 |
20020104750 | Ito | Aug 2002 | A1 |
20020119609 | Hatano et al. | Aug 2002 | A1 |
20020151115 | Nakajima et al. | Oct 2002 | A1 |
20020179004 | Jung | Dec 2002 | A1 |
20020197778 | Kasahara et al. | Dec 2002 | A1 |
20030006221 | Hong et al. | Jan 2003 | A1 |
20030013278 | Jang et al. | Jan 2003 | A1 |
20030013280 | Yamanaka | Jan 2003 | A1 |
20030022471 | Taketomi et al. | Jan 2003 | A1 |
20030029212 | Im | Feb 2003 | A1 |
20030057418 | Asano | Mar 2003 | A1 |
20030060026 | Yamazaki et al. | Mar 2003 | A1 |
20030068836 | Hongo et al. | Apr 2003 | A1 |
20030088848 | Crowder | May 2003 | A1 |
20030096489 | Im et al. | May 2003 | A1 |
20030104682 | Hara et al. | Jun 2003 | A1 |
20030119286 | Im et al. | Jun 2003 | A1 |
20030139069 | Block et al. | Jul 2003 | A1 |
20030148565 | Yamanaka | Aug 2003 | A1 |
20030148594 | Yamazaki et al. | Aug 2003 | A1 |
20030183270 | Falk et al. | Oct 2003 | A1 |
20030194613 | Voutsas et al. | Oct 2003 | A1 |
20030196589 | Mitani et al. | Oct 2003 | A1 |
20030218171 | Isobe et al. | Nov 2003 | A1 |
20040041158 | Hongo et al. | Mar 2004 | A1 |
20040053450 | Sposili et al. | Mar 2004 | A1 |
20040061843 | Im | Apr 2004 | A1 |
20040127066 | Jung | Jul 2004 | A1 |
20040140470 | Kawasaki et al. | Jul 2004 | A1 |
20040169176 | Peterson et al. | Sep 2004 | A1 |
20040182838 | Das et al. | Sep 2004 | A1 |
20040209447 | Gosain et al. | Oct 2004 | A1 |
20040222187 | Lin | Nov 2004 | A1 |
20040224487 | Yang | Nov 2004 | A1 |
20050003591 | Takaoka et al. | Jan 2005 | A1 |
20050032249 | Im et al. | Feb 2005 | A1 |
20050034653 | Im et al. | Feb 2005 | A1 |
20050059222 | You | Mar 2005 | A1 |
20050059223 | Im | Mar 2005 | A1 |
20050059224 | Im | Mar 2005 | A1 |
20050059265 | Im | Mar 2005 | A1 |
20050112906 | Maekawa et al. | May 2005 | A1 |
20050139830 | Takeda et al. | Jun 2005 | A1 |
20050141580 | Partlo et al. | Jun 2005 | A1 |
20050142450 | Jung | Jun 2005 | A1 |
20050142451 | You | Jun 2005 | A1 |
20050202654 | Im | Sep 2005 | A1 |
20050235903 | Im et al. | Oct 2005 | A1 |
20050236908 | Rivin | Oct 2005 | A1 |
20050255640 | Im et al. | Nov 2005 | A1 |
20050282319 | Bruland et al. | Dec 2005 | A1 |
20060030164 | Im | Feb 2006 | A1 |
20060035478 | You | Feb 2006 | A1 |
20060040512 | Im | Feb 2006 | A1 |
20060060130 | Im | Mar 2006 | A1 |
20060102901 | Im et al. | May 2006 | A1 |
20060125741 | Tanaka et al. | Jun 2006 | A1 |
20060134890 | Im | Jun 2006 | A1 |
20060211183 | Duan et al. | Sep 2006 | A1 |
20060254500 | Im et al. | Nov 2006 | A1 |
20070007242 | Im | Jan 2007 | A1 |
20070010074 | Im | Jan 2007 | A1 |
20070010104 | Im et al. | Jan 2007 | A1 |
20070012664 | Im | Jan 2007 | A1 |
20070020942 | Im | Jan 2007 | A1 |
20070032096 | Im | Feb 2007 | A1 |
20070051302 | Gosain et al. | Mar 2007 | A1 |
20070054477 | Kim et al. | Mar 2007 | A1 |
20070108472 | Jeong et al. | May 2007 | A1 |
20070111349 | Im | May 2007 | A1 |
20070145017 | Im et al. | Jun 2007 | A1 |
20070184638 | Kang et al. | Aug 2007 | A1 |
20070215877 | Kato et al. | Sep 2007 | A1 |
20070215942 | Chen et al. | Sep 2007 | A1 |
20080035863 | Im et al. | Feb 2008 | A1 |
20080124526 | Im | May 2008 | A1 |
20080176414 | Im | Jul 2008 | A1 |
20090001523 | Im | Jan 2009 | A1 |
20090137105 | Im | May 2009 | A1 |
20090140173 | Im | Jun 2009 | A1 |
20090218577 | Im | Sep 2009 | A1 |
20090242805 | Im | Oct 2009 | A1 |
20090309104 | Im et al. | Dec 2009 | A1 |
20100024865 | Shah et al. | Feb 2010 | A1 |
20100187529 | Im | Jul 2010 | A1 |
20110248278 | Im et al. | Oct 2011 | A1 |
20110309370 | Im | Dec 2011 | A1 |
Number | Date | Country |
---|---|---|
1495848 | May 2004 | CN |
198 39 718 | Mar 2000 | DE |
101 03 670 | Aug 2002 | DE |
655774 | May 1995 | EP |
681316 | Nov 1995 | EP |
1067593 | Jan 2001 | EP |
2338342 | Dec 1999 | GB |
2338343 | Dec 1999 | GB |
2338597 | Dec 1999 | GB |
S57-027035 | Feb 1982 | JP |
62160781 | Jul 1987 | JP |
62181419 | Aug 1987 | JP |
62216320 | Sep 1987 | JP |
H01-256114 | Oct 1989 | JP |
2081422 | Mar 1990 | JP |
2283036 | Nov 1990 | JP |
04033327 | Feb 1992 | JP |
04-279064 | Oct 1992 | JP |
5041519 | Feb 1993 | JP |
5048190 | Feb 1993 | JP |
06-011729 | Jan 1994 | JP |
6252048 | Sep 1994 | JP |
H06-260502 | Sep 1994 | JP |
6283422 | Oct 1994 | JP |
7176757 | Jul 1995 | JP |
08078330 | Mar 1996 | JP |
H09-007968 | Jan 1997 | JP |
9171971 | Jun 1997 | JP |
9260681 | Oct 1997 | JP |
H09-270393 | Oct 1997 | JP |
9321210 | Dec 1997 | JP |
10189998 | Jul 1998 | JP |
H10-244390 | Sep 1998 | JP |
11025064 | Jan 1999 | JP |
11064883 | Mar 1999 | JP |
11-281997 | Oct 1999 | JP |
11297852 | Oct 1999 | JP |
11330000 | Nov 1999 | JP |
2000223425 | Aug 2000 | JP |
2000-315652 | Nov 2000 | JP |
2000346618 | Dec 2000 | JP |
2001023920 | Jan 2001 | JP |
2002-203809 | Jul 2002 | JP |
2002-353142 | Dec 2002 | JP |
2002353159 | Dec 2002 | JP |
2003-031496 | Jan 2003 | JP |
20003100653 | Apr 2003 | JP |
2004031809 | Jan 2004 | JP |
2004-311935 | Nov 2004 | JP |
457553 | Oct 2001 | TW |
464960 | Nov 2001 | TW |
564465 | Dec 2003 | TW |
569350 | Jan 2004 | TW |
WO-9745827 | Dec 1997 | WO |
WO-9824118 | Jun 1998 | WO |
WO-9931719 | Jun 1999 | WO |
WO-0014784 | Mar 2000 | WO |
WO-0118854 | Mar 2001 | WO |
WO-0118855 | Mar 2001 | WO |
WO-0171786 | Sep 2001 | WO |
WO-0171791 | Sep 2001 | WO |
WO-0173769 | Oct 2001 | WO |
WO-0231869 | Apr 2002 | WO |
WO-0231869 | Apr 2002 | WO |
WO-0242847 | May 2002 | WO |
WO-0286954 | May 2002 | WO |
WO-02086955 | Oct 2002 | WO |
WO-03018882 | Mar 2003 | WO |
WO-03046965 | Jun 2003 | WO |
WO-03084688 | Oct 2003 | WO |
WO-2004017379 | Feb 2004 | WO |
WO-2004017380 | Feb 2004 | WO |
WO-2004017381 | Feb 2004 | WO |
WO-2004017382 | Feb 2004 | WO |
WO-2004075263 | Sep 2004 | WO |
WO-2005029546 | Mar 2005 | WO |
WO-2005029548 | Mar 2005 | WO |
WO-2005029550 | Mar 2005 | WO |
WO-2005029551 | Mar 2005 | WO |
WO-2005054949 | Jun 2005 | WO |
WO-2006055003 | May 2006 | WO |
Entry |
---|
Bergmann, R. et al., Nucleation and Growth of Crystalline Silicon Films on Glass for Solar Cells, Phys. Stat. Sol., 1998, pp. 587-602, vol. 166, Germany. |
Biegelsen, D.K., L.E. Fennell and J.C. Zesch, Origin of oriented crystal growth of radiantly melted silicon on SiO/sub 2, Appl. Phys. Lett. 45, 546 (1984). |
Boyd, I. W., “Laser Processing of Thin Films and Microstructures, Oxidation, Deposition and Etching of Insulators,” (Springer-Verlag Berlin Heidelber, 1987. |
Broadbent et al., “Excimer Laser Processing of Al-1%Cu/TiW Interconnect Layers,” Proceedings, Sixth International IEEE VLSI Multilevel Interconnection Conference, Santa Clara, CA, Jun. 12-13, pp. 336-345 (1989). |
Brotherton et al., “Influence of Melt Depth in Laser Crystallized Poly-Si Thin Film Transistors,” Journal of Appl. Phys., 82:4086 (1997). |
Brotherton, “Polycrystalline Silicon Thin Film Transistors,” Semicond. Sci. Tech., 10:721-738 (1995). |
Brotherton, S.D., et al., Characterisation of poly-Si TFTs in Directionally Solidified SLS Si, Asia Display/IDW'01, p. 387-390. |
Crowder et al., “Low-Temperature Single-Crystal Si TFT's Fabricated on Si Films Processed via Sequential Lateral Solidification,” IEEE Electron Device Letter, 19 (8): 306 (1998). |
Crowder et al., “Parametric Investigation of SLS-processed Poly-silicon Thin Films for TFT Applications,” Preparations and Characterization, Elsevier, Sequoia, NL, vol. 427, No. 1-2, Mar. 3, 2003, pp. 101-107, XP004417451. |
Crowder et al., “Sequential Lateral Solidification of PECVD and Sputter Deposited a-Si Films”, Mat. Res. Soc. Symp. Proc. 621:Q.9.7.1-9.7.6, 2000. |
Dassow, R. et al. Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications, Solid State Phenomena, pp. 193-198, vols. 67-68, Scitec Publications, Switzerland. |
Dassow, R. et al. Nd:YVO4 Laser Crystallization for Thin Film Transistors with a High Mobility, Mat. Res. Soc. Symp. Proc., 2000, Q9.3.1-Q9.3.6, vol. 621, Materials Research Society. |
Dassow, R. et al., Laser crystallization of silicon for high-performance thin-film transistors, Semicond. Sci. Technol., 2000, pp. L31-L34, vol. 15, UK. |
Dimitriadis, C.A., J. Stoemenos, P.A. Coxon, S. Friligkos, J. Antonopoulos and N.A. Economou, Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin-film transistors, J. Appl. Phys. 73, 8402 (1993). |
Endert et al., “Excimer Laser: A New Tool for Precision Micromachining,” Optical and Quantum Electronics, 27:1319 (1995). |
Fogarassy et al., “Pulsed Laser Crystallization of Hydrogen-Free a-Si Thin Films for High-Mobility Poly-Si TFT Fabrication,” Applied Physics A—Solids and Surfaces, 56:365-373 (1993). |
Geis et al., “Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallization,” Appl. Phys. Lett. 35(1) Jul. 1, 1979, 71-74. |
Geis et al., “Silicon graphoepitaxy using a strip-heater oven,” Appl. Phys. Lett. 37(5), Sep. 1, 1980, 454-456. |
Geis et al., “Zone-Melting recrystallization of Si Films with a moveable-strip heater oven,” J. Electro-Chem. Soc., 129: 2812 (1982). |
Gosain et al., “Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate,” Jpn. J. Appl. Phys., vol. 42 (2003) pp. L135-L137. |
Gupta et al., “Numerical Analysis of Excimer-laser induced melting and solidification of Si Thin Films”, Applied Phys. Lett., 71:99, 1997. |
Hau-Riege et al., “The Effects Microstructural Transitions at Width Transitions on interconnect reliability,” Journal of Applied Physics, 87(12): 8467-8472. |
Hawkins, W.G. et al., “Origin of lamellae in radiatively melted silicon flims,” Appl. Phys. Lett. 42(4), Feb. 15, 1983. |
Hayzelden, C. and J.L. Batstone, Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films, J. Appl. Phys. 73, 8279 (1993). |
Im et al., “Controlled Super-Lateral Growth of Si Films for Microstructural Manipulation and Optimization,” Phys. Stat. Sol. (a), 166:603 (1998). |
Im et al., “Crystalline Si Films for Integrated Active-Matrix Liquid-Crystals Displays,” MRS Bulletin, 21:39 (1996). |
Im et al., “On the Super Lateral Growth Phenomenon Observed in Excimer Laser-Induced Crystallization of Thin Si Films,” Appl. Phys. Lett., 64 (17): 2303 (1994). |
Im et al., “Phase Transformation Mechanisms Involved in Excimer Laser Crystallization of Amorphous Silicon Films,” Appl. Phys. Lett., 63 (14): 1969 (1993). |
Im et al., “Single-Crystal Si Films for Thin-Film Transistor Devices,” Appl. Phys. Lett., 70(25): 3434 (1997). |
Im, J.S., Method and system for producing crystalline thin films with a uniform crystalline orientation, application # 60/503419; ref. file # 36013(BB); Columbia ref. M02-063. |
Ishida et al., “Ultra-shallow boxlike profiles fabricated by pulsed ultraviolet-laser doping process,” J. Vac. Sci. Technol. B 12(1): 399-403, (1994). |
Ishihara et al., “A Novel Double-Pulse Excimer-Laser Crystallization Method of Silicon Thin-Films,” Publication Office, Japanese Journal of Applied Physics, Tokyo, Japan, 34(8A): 3976-3981 (1995). |
Jeon et al., “Two-step laser recrystallization of poly-Si for effective control of grain boundaries,” Journal of Non Crystalline Solids, 266-269: 645-649 (2000). |
Jung, Y.H., et al., Low Temperature Polycrystalline Si TFTs Fabricated with Directionally Crystallized Si Film, Mat. Res. Soc. Symp. Proc. vol. 621, Z8.3.1-6, 2000. |
Jung, Y.H., et al., The Dependence of Poly-Si TFT Characteristics on the Relative Misorientation Between Grain Boundaries and the Active Channel, Mat. Res. Soc. Symp. Proc. vol. 621, Q9.14.1-6, 2000. |
Kahlert, H., “Creating Crystals,” OE Magazine, Nov. 2001, 33-35. |
Kim et al., “Grain Boundary Location-Controlled Poly-Si Films for TFT Devices Obtained Via Novel Excimer Laser Process,” Mat. Res. Soc. Symp. Proc., vol. 358, 1995. |
Kim et al., “Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films,” Mat. Res. Soc. Sym. Proc., 321:665-670 (1994). |
Kim, “Excimer-Laser-Induced Crystallization of Amorphous Silicon Thin Films,” Ph. D. Dissertation Abstract, Columbia University, 1996. |
Kim, C. et al., “Development of SLS-Based SOG Display,” IDMC 2005, pp. 252-255. |
Kim, H. J. et al., “Excimer Laser Induced Crystallization of Thin Amorphous Si Films on SiO2: Implications of Crystallized Microstructures for Phase Transformation Mechanisms,” Mat. Res. Soc. Symp. Proc., vol. 283, 1993. |
Kim, H.-J., et al., “The effects of dopants on surface-energy-driven secondary grain growth in silicon films,” J. Appl. Phys. 67 (2), Jan. 15, 1990. |
Kim, H.J. et al., “New Excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si Films for Thin Film Transistors”, Applied Phys. Lett., 68: 1513. |
Kimura, M. and K. Egami, Influence of as-deposited film structure on (100) texture in laser-recrystallized silicon on fused quartz, Appl. Phys. Lett. 44, 420 (1984). |
Knowles, D.S. et al., “P-59: Thin Beam Crystallization Method: a New Laser Annealing Tool with Lower Cost and Higher Yield for LTPS Panels,” SID 00 Digest, pp. 1-3. |
Kohler, J.R. et al., Large-grained polycrystalline silicon on glass by copper vapor laser annealing. Thin Solid Films, 1999, pp. 129-132, vol. 337, Elsevier. |
Kung, K.T.Y. and R. Reif, Implant-dose dependence of grain size and (110) texture enhancements in polycrystalline Si films by seed selection through ion channeling, J. Appl. Phys. 59, 2422 (1986). |
Kung, K.T.Y., R.B. Iverson and R. Reif, Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO/sub 2/:Implant angle dependence, Appl. Phys. Lett. 46, 683 (1985). |
Kuriyama, H., T. Nohda, S. Ishida, T. Kuwahara, S. Noguchi, S. Kiyama, S. Tsuda and S. Nakano, Lateral grain growth of poly-Si films with a specific orientation by an excimer laser annealing method, Jpn. J. Appl. Phys. 32, 6190 (1993). |
Kuriyama, H., T. Nohda, Y. Aya, T. Kuwahara, K. Wakisaka, S. Kiyama and S. Tsuda, Comprehensive study of lateral grain growth in poly-Si films by excimer laser annealing and its application to thin film transistors, Jpn. J. Appl. Phys. 33, 5657 (1994). |
Lee, S.-W. and S.-K. Joo, Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization, IEEE Electron Device Letters 17, 160 (1996). |
Lee, S.-W., Y.-C. Jeon and S.-K. Joo, Pd induced lateral crystallization of amorphous Si thin films, Appl. Phys. Lett. 66, 1671 (1995). |
Leonard, J.P. et al, “Stochastic modeling of solid nucleation in supercooled liquids”, Appl. Phys. Lett. 78:22, May 28, 2001, 3454-3456. |
Limanov, A. et al., Single-Axis Projection Scheme for Conducting Sequential Lateral Solidification of Si Films for Large-Area Electronics, Mat. Res. Soc. Symp. Proc., 2001, D10.1.1-D10.1.7, vol. 685E, Materials Research Society. |
Limanov, A. et al., The Study of Silicon Films Obtained by Sequential Lateral Solidification by Means of a 3-k-Hz Excimer Laser with a Sheetlike Beam, Russian Microelectronics, 1999, pp. 30-39, vol. 28, No. 1, Russia. |
Limanov, A.B., et al., Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Cyrstal Super-thin Si Films for High-Performance Thin Film Transistor Devices, Perspectives, Science, and Technologies for Novel Silicon on Insulator Devices, Eds. P.L.F. Hemment, Kluwer Academic Publishers 2000, pp. 55-61. |
Mariucci et al., “Grain boundary location control by patterned metal film in excimer laser crystallized polysilicon,” Proceedings of the Fifth International Conference on Polycrystalline Semiconductors, Schwabisch Gmund, Germany, 67-68: 175-180 (1998). |
McWilliams et al., “Wafer-Scale Laser Pantography: Fabrication of N-Metal-Oxide-Semiconductor Transistors and Small-Scale Integrated Circuits by Direct-Write Laser-Induced Pyrolytic Reactions,” Applied Physics Letters, American Institute of Physics, New York, US, 43(10): 946-948 (1983). |
MICRO/LAS Lasersystem GMBH, “Overview of Beam Delivery Systems for Excimer Lasers,” (1999). |
MICRO/LAS Lasersystem GMBH, “UV Optics Systems for Excimer Laser Based Micromachining and Marking,” (1999). |
Miyasaka, M., K. Makihira, T. Asano, E. Polychroniadis and J. Stoemenos, in situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films, Appl. Phys. Lett. 80, 944 (2002). |
Miyata et al, “Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display,” Japanese J. of Applied Physics, Part 1—Regular Papers Short Notes & Review Papers, 31:4559-62 (1992). |
Nebel, “Laser Interference Structuring of A-Si:h” Amorphous Silicon Technology—1996, San Francisco, CA Apr. 8-12, Materials Research Society Symposium Proceedings, vol. 420, Pittsburgh, PA (1996). |
Nerding, M., S. Christiansen, R. Dassow, K. Taretto, J.R. Kohler and H.P. Strunk, Tailoring texture in laser crystallization of silicon thin-films on glass, Solid State Phenom. 93, 173 (2003). |
Noguchi, “Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC),” Jpn. J. Appl. Phys., 32:L1584-L1587 (1993). |
Ozawa et al., “Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate,” Jpn. J. Appl. Phys. 38(10):5700-5705 (1999). |
Sato et al., “Mobility anisotropy of electrons in inversion layers on oxidized silicon surfaces,” Physical Review B (State) 4, 1950 (1971). |
Smith, H.I. et al, “The Mechanism of Orientation in Si Graphoepitaxy by Laser Strip Heater Recrystallization,” J. Electrochem. Soc.: Solid-State Science and Technology, vol. 130, No. 10, Oct. 1983, pp. 2050-2053. |
Song et al., “Single Crystal Si Islands on SiO2 Obtained Via Excimer Laser Irradiation of a Patterned Si Film”, Applied Phys. Lett., 68:3165, 1996. |
Sposili et al., “Line-scan sequential lateral solidification of Si thin films”, Appl. Phys. A67, 273-6, 1998. |
Sposili et al., “Sequential Lateral Solidification of Thin Silicon Films on SiO2,” Appl. Phys. Lett., 69(19): 2864 (1996). |
Sposili et al., “Single-Crystal Si Films via a Low-Substrate-Temperature Excimer-Laser Crystallization Method,” Mat. Res. Soc. Symp. Proc., 452: 953-958 (1997). |
Thompson, C.V. and H.I. Smith, Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon, Appl. Phys. Lett. 44, 603 (1984). |
van der Wilt, P.C. et al., “State-of-the-Art Laser Crystallization of Si for Flat Panel Displays,” PhAST, May 18, 2004, pp. 1-34. |
van der Wilt, P.C. et al., “The Commercialization of the SLS Technology,” Taiwan FPD, Jun. 11, 2004, pp. 1-12. |
van der Wilt, P.C., “Textured poly-Si films for hybrid SLS,” Jul. 2004, pp. 1-5. |
Voutsas, A. T., “Assessment of the Performance of Laser-Based Lateral-Crystallization Technology via Analysis and Modeling of Polysilicon Thin-Film-Transistor Mobility,” IEEE Transactions on Electronic Devices, vol. 50, No. 6, Jun. 2003. |
Voutsas, A.T. et al.: “Effect of process parameters on the structural characteristics of laterallyy grown, laser-annealed polycrystalline silicon films,” Journal of applicaed Physics, vol. 94, No. 12, Dec. 15, 2003. |
Voutsas, A.T., A new era of crystallization: advances in polysilicon crystallization and crystal engineering, Applied Surface Science 250-262, 2003. |
Watanabe et al., “Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing,” Japanese J. of Applied Physics, Part 1—Regular Papers Short Notes & Review Papers, 33:4491-98 (1994). |
Weiner, K. H. et al. “Laser-assisted, Self-aligned Silicide Formation,” A Verdant Technologies technical brief, Aug. 7, 1997, 1-9. |
Weiner, K. H. et al., “Ultrashallow Junction Formation Using Projection Gas Immersion Laser Doping (PGILD),” A Verdant Technologies Technical Brief, Aug. 20, 1997. |
Werner, J.H., et al. From polycrystalline to single crystalline silicon on glass, Thin Solid Films 383, 95-100, 2001. |
White et al., “Characterization of thin-oxide MNOS memory transistors,” IEEE Trans. Electron Devices ED-19, 1280 (1972). |
Yamamuchi et al., “Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications,” Journal of Applied Physics, 75(7):3235-3257 (1994). |
Yoshimoto et al., “Excimer-Laser-Produced and Two-Dimensionally Position-Controlled Giant Si Grains on Organic SOG Underlayer,” p. 285-286, AM-LCD (2000). |
Jeon et al., “New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement,” Jpn. J. Appl. Phys. vol. 39 (2000) pp. 2012-2014, Part 1, No. 4B, Apr. 2000. |
Andrä et al., “A new technology for crystalline silicon thin film solar cells on glass based on the laser crystallization,” IEEE, pp. 217-220 (2000). |
Andrä et al., “Multicrystalline Llc-Si thin film solar cells on low temperature glass,” Poster, 3rd world Conference on Photovoltaic Energy Conversion, Osaka, Japan, pp. 1174-1177, May 11-18, 2003. |
Sinke et al., “Explosive crystallization of amorphous silicon: Triggering and propagation,” Applied Surface Science, vol. 43, pp. 128-135 (1989). |
Geiler, H.D., et al., “Explosive Crystallization in Silicon”, J. Appl. Phys., May 1, 1986, vol. 59, pp. 3091-3099. |
International Search Report for corresponding International Patent Application No. PCT/US2010/033565, mailed Jul. 1, 2010, 1 page. |
International Search Report for corresponding International Patent Application No. PCT/US2010/055106, mailed Jan. 4, 2011, 1 page. |
Van Der Wilt, “A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates,” Proc. of SPIE vol. 6106, 61060B-1 to B-15, (2006). |
Number | Date | Country | |
---|---|---|---|
20090130795 A1 | May 2009 | US |
Number | Date | Country | |
---|---|---|---|
60989729 | Nov 2007 | US | |
61012229 | Dec 2007 | US |