Patent Application
20240004262
Integrated photonics that enable nonlinear optical processes are important for numerous applications, including precision metrology, microscopy, micro-resonator frequency comb generation; optical signal generation and processing; sensing, positioning, and navigation; and generation and manipulation of quantum information. Nonlinear optical photonics may be fabricated using silicon nitride (Si3N4), which has acceptable Kerr nonlinear coefficient and low optical loss.
Integrated nonlinear photonics utilizing tantalum pentoxide (tantala) is disclosed, offering important advantages compared to the existing state of practice in nonlinear photonics. The described ring resonator and method of fabrication enables high-performance nonlinear photonics devices (e.g. micro-resonator frequency combs) to be created at lower cost and higher yield than existing technologies.
Also disclosed is the use of tantala material with properties supporting nonlinear processes like micro-resonator frequency comb generation and supercontinuum generation. Semiconductor processing techniques facilitate depositing tantala material on thermally oxidized silicon wafers and fabricated integrated nonlinear photonics devices, as disclosed herein.
Fabricating integrated nonlinear photonics with tantala takes advantage of the superior properties of this material, which may include deposition, lithography, chemical etching, and thermal processing approaches to realize integrated nonlinear photonics devices. The described method of fabrication of nonlinear photonics advantageously exploits the superior properties of tantala, namely low tensile stress that enables high-yield fabrication, and high optical quality factor which leads to low optical losses, allowing efficient excitation of nonlinear processes. Low thermal processing temperature maintains process compatibility for co-integration with other photonics materials and semiconductor processes.
Tantala solves certain problems in nanofabrication, compared to other materials like silicon nitride that represent the current state-of-practice. Therefore, tantala is an important material platform that offers higher yield of devices designed for integrated nonlinear photonics. Key properties that make tantala attractive for nonlinear photonics include wide optical transparency window, low tensile stress for high yield in nanofabrication, and relatively low thermal processing temperature to maintain compatibility for co-integration with other integrated photonics materials. When using the method of fabrication described herein, tantala photonic devices have low optical losses to enable efficient nonlinear photonics processes.
Integrated nonlinear photonics are important in the areas of precision metrology and sensing, nonlinear science, high-speed data communications, wideband signal analysis and generation, and for quantum information science.
In a first aspect, a photonic device includes a substrate and a tantala ring resonator on the substrate. The tantala ring resonator has at least one of (i) a quality factor exceeding three million and (ii) a threshold power less than one hundred milliwatts. In a second aspect, a frequency-comb generation method includes sweeping the output frequency of a laser coupled to a tantala ring resonator of the first aspect.
In a second aspect, a frequency-comb generation method includes sweeping the output frequency of a laser coupled to a tantala ring resonator that has at least one of (i) a quality factor exceeding three million and (ii) a threshold power less than one hundred milliwatts.
The tantala ring resonator 110 is formed by depositing tantala using an ion-beam sputtering technique, which leads to formation of the tantala ring resonator 110 with high optical quality factor. In an embodiment, the ring resonator 110 has an optical quality factor larger than 3.8×106.
The tantala ring resonator 110 has a radius 112 and a ring thickness 114. In an embodiment, the radius 112 is 46 micrometers and the ring thickness 114 is 1.5 micrometers. The ring radius 112 and the ring thickness 114 may each be either larger or smaller without departing from the scope hereof. The tantala ring resonator 110 has a height 116, which may be between 500 nanometers and 1000 nanometers. In an embodiment, the height is 800 nm.
The substrate 120 may be a semiconductor such as silicon. In an embodiment, the substrate 120 made from a silicon wafer that is thermally oxidized.
The tantala ring resonator 110 formed using ion-beam sputtering can be used for Kerr nonlinear process due to the high optical quality factor that results from using ion-beam sputtering fabrication. The low-loss associated with the tantala ring resonator 110 formed in this way allows its use in ultra-broadband Kerr-soliton frequency combs. Tantala nonlinear optics formed using prior fabrication processes have lower optical quality factors, which leads to loss of optical power during use. As a result, prior art tantala nonlinear optics require larger input optical power, which makes their use in frequency combs frustrated. The low losses associated with the tantala ring resonator 110 fabricated with ion-beam sputtering make it possible for use in ultra-broadband Kerr-soliton frequency combs.
Similar power requirements and optical quality factor arguments are relevant for use of the tantala ring resonator 110 in supercontinuum generation across the near-infrared spectral range of light. Because of the high optical quality factor, less input optical power is required to initiate supercontinuum generation, making devices such as photonic device 100 amenable to a range of supercontinuum applications not available to other tantala nonlinear photonic devices that are formed using prior art fabrication methods. The high losses associated with these prior art device increases the required input power for supercontinuum generation unfavorably.
In block 210, tantalum pentoxide is deposited with ion-beam sputtering to form a tantala layer on a substrate. The substrate is formed of at least one material selected from the group consisting of silicon, thermally oxidized silicon, sapphire, single crystal quartz, fused silica, gallium arsenide, aluminum gallium arsenide, gallium phosphide, and lithium niobate. The tantala layer may be 570 nanometers or 820 nanometers thick (measured along the z-axis in
In block 220, the tantala layer is annealed. In an embodiment, the tantala layer is annealed at 600° C. for 5 hours with oxygen background gas. The annealing temperature may be higher or lower and annealing time may be longer or shorter without departing from the scope hereof. For example, the annealing temperature may be between 400° C. and 700° C., and the annealing time may be between one hour and twelve hours. In an embodiment, the annealing is done with nitrogen background gas. Annealing the tantala contributes to the high optical quality factor exhibited by tantala photonic devices fabricated using method 200. In an embodiment, block 220 includes annealing the tantala layer in the presence of a gas mixture consisting of oxygen gas and nitrogen gas.
In block 250, the tantala layer is etched to form a tantala photonic device. In an embodiment, the tantala photonic device is a ring resonator, such as tantala ring resonator 110. Other tantala photonic devices with high optical quality factor may be fabricated using method 200 without departing from the scope hereof.
In certain embodiments, the method 200 includes one or more additional blocks of the flowchart in
In block 252, the tantala layer is etched using inductively coupled plasma reactive ion etching and in block 254, the etching is done in the presence of argon and one or both of CHF3 or CF4. In an embodiment, the tantala photonic device and the substrate are cleaned to remove any residual organic material using a sulfuric-acid based oxidizer. In an embodiment, the fluoropolymer residue from the plasma process is removed from the tantala photonic device and the substrate.
In block 260, a top-cladding material is deposited on the tantala photonic device, including any exposed areas on the top and the sides. The top-cladding material formed from a material chosen from a group consisting of thermally oxidized silicon, sapphire, single crystal quartz, and fused silica. The top-cladding material may be deposited using inductively coupled plasma chemical vapor deposition, though other deposition methods may be used. The top-cladding may be selected to optimize the phase matching requirements of the intended use of the nonlinear photonic device.
In block 270, the substrate is diced. This may be done to isolate the portion of the substrate to which the tantala photonic device is attached and separate it from a remaining portion of the substrate. In an embodiment, the blocks of method 200 may be applied to multiple locations of the substrate and each may be diced to generate a plurality of individual nonlinear photonic devices, each with a portion of substrate and a tantala photonic device. In an embodiment, the dicing is done using a combination of ultra violet laser lithography and silicon deep reactive-ion etching, though other dicing method may be used.
Changes may be made in the above methods and systems without departing from the scope hereof. It should thus be noted that the matter contained in the above description or shown in the accompanying drawings should be interpreted as illustrative and not in a limiting sense. The following claims are intended to cover all generic and specific features described herein, as well as all statements of the scope of the present method and system, which, as a matter of language, might be said to fall therebetween.
This application is a continuation of U.S. patent application Ser. No. 16/501,134, filed on 10 Jul. 2020, which claims priority to U.S. Provisional Patent Application No. 62/872,402, filed on 10 Jul. 2019. Each of these applications is incorporated herein by reference in its entirety.
This invention was made with government support under grant number 70NANB18H006 awarded by NIST. The government has certain rights in the invention.
| Number | Date | Country | |
|---|---|---|---|
| 62872402 | Jul 2019 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 16501134 | Jul 2020 | US |
| Child | 18368886 | US |
