Patent Application
20100023817
This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2008-73092 filed on Jul. 25, 2008, the subject matter of which is hereby incorporated by reference.
The present invention relates to semiconductor memory devices and more particularly, to a test system and method for a semiconductor memory devices.
Semiconductor memory devices may be generally classified into volatile and nonvolatile types. Volatile memories operate at relatively high data access speeds, but lose stored data when power is interrupted. Volatile memories include, for example, static ransom access memory (RAM), dynamic RAM (DRAM), and synchronous DRAM (SDRAM).
In contrast, nonvolatile memories retain stored data even power is interrupted. Thus, the nonvolatile memory devices have been widely adopted for use in applications demanding data retention in the absence of applied power. There are many kinds of nonvolatile memories including, for example, mask read-only memory (MROM), programmable ROM (PROM), erasable and programmable ROM (EPROM), electrically erasable and programmable ROM (EEPROM), flash memory, phase-change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), and ferroelectric RAM (FRAM).
Flash memory is nonvolatile and enjoys many advantages in operation and manufacture. As a result, flash memory has been widely employed in computers and memory cards because of its ability to be readily (electrically) erased while providing nonvolatile data storage in a densely integrated memory device.
Flash memory as conventionally provided includes NOR and NAND types, as distinguished by the interconnection pattern between constituent memory cells and bit lines. NOR-type flash memory has a structure in which a single bit line is connected in parallel with two or more cell transistors. In NOR-type flash memory, data is stored by an electrical phenomenon commonly referred to as hot electron injection, but is erased by a separate phenomenon referred to as Fowler-Nordheim (F-N) tunneling. In NAND-type flash memory, a bit line is series connected to two or more cell transistors and data is both stored and erased using F-N tunneling.
NOR flash memory is disadvantageous in its relatively low integration density and relatively high current consumption. However, NOR flash memory is capable of operating at relatively high frequencies. In contrast, NAND flash memory is advantageous in its relatively high integration density and low current consumption.
Embodiments of the present invention are directed to a test system and method capable of rapidly detecting a defect in a data path in a memory device.
In one embodiment, the invention provides a test system comprising; a memory device having a data input/output (I/O) circuit configured to connect a data write-in path used to write data to a memory cell array and a data read-out path used to read data from the memory cell array, and further configured during a test mode to retain a copy of test pattern data received in the I/O circuit via the data write-in path as output test data before the test pattern data is stored in the memory cell array as write data, and a test device configured during the test mode to generate the test pattern data, receive the output test data from the memory device, compare the output test data with the test pattern data, and generate an error detection signal on the basis of the comparison of the output test data and the test data pattern, wherein the error detection signal indicates the presence or absence of a defect in the data write-in or read-out path.
In another embodiment, the invention provides a test method for a memory device having a memory cell array, the method comprising; generating test pattern data in a test device connected to the memory device, applying the test pattern data to the memory device via a data write-in path, converting the test pattern data into output test data and latching the output test data in an input/output (I/O) circuit of the memory device before writing the test pattern data to the memory cell array, providing the output test data via a data read-out path of the memory device, and comparing the output test data with the test pattern data to identify the presence or absence of a defect in the data write-in path or the data read-out path.
Non-limiting and non-exhaustive embodiments of the invention will be described with reference to the following figures, wherein like reference numbers and labels refer to like or similar elements unless otherwise specified. In the figures:
Embodiments of the invention will now be described in some additional detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be constructed as being limited to only the illustrated embodiments. Rather, these embodiments are presented as teaching examples.
Referring to
The test device 120 generally comprises a test pattern generator 121, a comparator 122, and a test controller 123.
It is assumed in the illustrated embodiment of
Given the rapid data access and low current consumption capabilities afforded by flash memory, it is commonly used in mobile electronic devices, such as cellular phones, personal digital assistants (PDA), digital cameras, portable gaming consoles, MP3 players, etc. However, flash memory is also used quite widely in certain home appliances, such as high-definition televisions, digital versatile disks (DVD), routers, global positioning systems (GPS), etc. These noted commercial advantages notwithstanding, embodiments of the present invention may include other types of memory, including but not limited to, mask ROM, programmable ROM, and ferroelectric RAM.
Returning to
An exemplary plurality of memory cells included in the memory cell array 111 is shown in
In the hot-electron channel injection mode used to program the NOR flash memory, a program current is required that is larger by some predetermined amount in view of the high voltage (e.g., 4V to 6V) applied to the constituent drain regions of selected memory cells within memory cell array 111. Accordingly, during a programming operation for the NOR flash memory cells, the number of memory cells that may be simultaneously programmed is conventionally restricted to 2 or 4. For instance, when the number of simultaneously programmable data bits is 4, 16-bit data must be programmed through four (4) programming cycles once the 16-bit data is divided into 4 groups of 4 bits. It should be noted at this point that it is permissible to modify the number of simultaneously programmable data bits in accordance with the structural pattern of a particular memory circuit under test.
In
The test pattern generator 121 may be used to generate test pattern data and provide the test pattern data to the data I/O circuit 112 via the data write-in path 101.
The comparator 122 may be used to compare “output test data” provided by the data I/O circuit 112 with the test pattern data (e.g., the output test data returned from memory cell array 111 and/or from the data I/O circuit 112 following the transfer and storage of the test pattern data within memory cell array 111 and/or from the data I/O circuit 112). Based on the comparison result, an error detection signal may be generated indicating that output test data matches (or fails to match) the test pattern data. If the output test data returned from the data I/O circuit 112 matches with the test pattern data, then the error detection signal is indicated as negative (e.g., is disabled). A negative error detection signal indicates that no defect is apparent in the data write-in path 101 and the data read-out path 102 connecting the memory device 110 with the test device 120.
In contrast, if the output test data returned from the data I/O circuit 112 does not match with the test pattern data, a positive error detection signal is provided by comparator 122. A positive error detection signal indicates that at least one defect is apparent in either the data write-in path 101 or the data read-out path 102 connecting the memory device 110 with the test device 120. In certain embodiments of the invention, it is then determined whether the defect(s) are apparent in the data write-in path 101 or the data read-out path 102.
The test controller 123 is configured to control the overall operation of the test device 120. While the test device 120 is operating in the test mode, the test pattern generator 121 generates and provides the test pattern data under the control of the test controller 123. In certain embodiments of the invention, the test controller 123 may be configured to communicate with a constituent control circuit (not shown) within memory device 110 that is configured to control the exchange of data to/from the data I/O circuit 112. In other embodiments of the invention, the test controller 123 may be configured to directly control the data I/O circuit 112.
Referring to
The writing driver 210 is disposed on the data write-in path 101, and is adapted to apply “write data” to the memory cell array 111 as received from the data write-in path 101 during a programming operation. The writing driver 210 activates bit lines with a bit line voltage in accordance with the write data to be programmed during the programming operation. For instance, if the write data is to be normally programmed (hereinafter, ‘program write data’), the writing driver 210 activates a selected bit line with the bit line voltage. However, if the write data is to be program inhibited (hereinafter, referred to as ‘program-inhibited write data’), the writing driver 210 sets a selected bit line to a predetermined voltage (e.g., the ground voltage) less than the bit line voltage.
The sense amplifier 220 is disposed on the data read-out path 102, and adapted to provide read data from the memory cell array 111 to the data read-out path 102 during a read operation. The sense amplifier 220 detects data bits from memory cells of selected word and bit lines. The data bits read by the sense amplifier 220 may be provided to external circuits via the data output buffer 240. In certain embodiments of the invention, read data may be provided following a pass/fail check performed by a conventionally understood circuit (not shown) in accordance certain operating modes. For example, read data provided by the sense amplifier 220 during a normal read operation may be provided to a memory controller or host.
The sense amplifier 220 comprises a data latch circuit 221. The data latch circuit 221 is connected to the data write-in path 101 extending from the writing driver 210 and data scanning circuit 260. During a test mode and before writing the received write data to memory cell array 111, the data latch circuit 221 latches (or retains) a copy of the write data provided via the write-in path 101. With this configuration, the data latch circuit 221 is able to latch write data on a unit by unit basis (e.g., on an N data words for N data words basis, where N is an integer larger than 1). The latched write data may then be provided to the data read-out path 102.
The data input buffer 230 is disposed on the data write-in path 101 to facilitate the transfer of externally applied write data (e.g., test pattern data) into the writing buffer 250. Thus, the data input buffer 230 may be configured to transfer write data into the writing buffer 250 on a defined data unit by data unit basis (e.g., on a one word by one word basis).
The data output buffer 240 is disposed on the data read-out path 102, and is configured to transfer read data via the data read-out path 102 to one or more external circuit(s), as provided by the data latch circuit 221. Thus, the data output buffer 240 may be configured to transfer read data on a defined data unit basis (e.g., on a one word by one word basis).
Within this configuration, the writing buffer 250 may be loaded with test pattern data, as transferred by the data input buffer 230 via the data write-in path 101. In certain embodiments of the invention, the writing buffer 250 will be configured to store data using a unit basis larger than that compatible with the data scanning circuit 260 (e.g., N data words). Accordingly, the data scanning circuit 260 may be configured to incorporate a scan latch 261 receiving test data from the writing buffer 250. Received write data (e.g., test pattern data) stored in the writing buffer 250 is transferred to the data scanning circuit 260 via scan latch 261. That is, scanning-unit write data from the writing buffer 250, possibly having a first write data size (e.g., N data words), can be sequentially transferred into the data scanning circuit 260, where data scanning circuit 260 is compatible with a second write data size (e.g., M data words, where M is less than or greater than N).
The data scanning circuit 260 receives the scanning-unit write data from the writing buffer 250 and sequentially scans its constituent data bits in order to place the write data in a form compatible with practical programming, or so-called ‘program-compatible write data”, i.e., ‘0’ for single level memory cells (SLC) or ‘10’, ‘01’, and ‘00’ for 2-bit multi-level memory cells (MLC), etc. In order to accomplish this function, the data scanning circuit 260 includes the scan latch 261. The data scanning circuit 260 scans write data loaded to the scan latch 261, and then transfers the write data in program-compatible write data blocks to the writing driver 210.
Then, the writing driver 210 operates to drive bit lines within the memory cell array 111 such that constituent memory cells are programmed using an appropriate number of simultaneously programmed data bits during a programming operation. However, during a test mode, the data scanning circuit 260 scans the write data loaded to the scanning latch 261 and transfers the wrote data in program-compatible write data blocks to the data latch circuit 221.
With this structural configuration, the test pattern data applied via the data write-in path 101 through the data input buffer 230 is received at the data latch circuit 221 before being written to the memory cell array 111. Further, the write data latched by data latch 221 may be provided to the test device 120 via the data read-out path 102 through the data output buffer 240.
In this manner, if the data latch circuit 221 holds the scanning-unit data (i.e., N data words), the comparator 122 is able to compare the test pattern data with the corresponding scanning-unit data (i.e., N data words) as transferred via the data write-in path 101. If the data output buffer 240 receives the scanning-unit data from the data latch circuit 221 and provides the test device 120 with this data using a unit data smaller than N data words (hereinafter, referred to as ‘parcel unit’), the comparison operation between the parcel unit data and the test pattern data may be repeated until a full block (N data words) of the scanning-unit data is subject to comparison. For instance, if the scanning-unit data size is 8 words and a corresponding parcel unit size is one word, a sequence of eight data transfer cycles may be performed before the comparison operation proceeds. Alternately, eight, one word comparison operations may be performed.
While the aforementioned embodiment is illustrative of a data I/O circuit and its operation during a buffer program mode of operation, the present invention is not restrictive to only the foregoing details.
In the test mode, the (original) test pattern data provided from the test pattern generator 121 is applied to memory device 100 via the data write-in path 101 (S110).
The test pattern data (now write data) applied via the data write-in path 101 is ultimately latched in the data latch circuit 221 before being written to the memory cell array 111 (S120).
The write data held in the data latch circuit 221 is now provided to the comparator 122 via the data read-out path 102 as output test data (S130).
The comparator 122 operates to compare the output test data with the test pattern data (S140, S150). From the comparison results, if the output test data agrees with the test pattern data, a negative error detection signal is generated. That is, it is determined that there is no defect apparent in the data path (i.e., the data write-in path 101 or the data read-out path 102) of the memory device 110 (S160). In contrast, if the output test data does not agree with the test data, a positive error detection signal is generated. That is, it determined that there is at least one defect in the data write-in path 101 or the data read-out path 102 of the memory device 110 (S170).
The above-disclosed subject matter is to be considered illustrative, and not restrictive, and the appended claims are intended to cover all such modifications, enhancements, and other embodiments, which fall within the scope of the present invention. Thus, to the maximum extent allowed by law, the scope of the present invention is to be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing detailed description.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2008-73092 | Jul 2008 | KR | national |
