The invention relates to a thermoelectric generator module to an associated metal-ceramic substrate, and to a method for producing a metal-ceramic substrate.
The mode of operation of thermoelectric generators is known in principle. A heat flow is produced by means of a temperature difference between the hot and cold zone of a thermoelectric generator component and is converted via the thermoelectric generator component into electrical energy. Thermoelectric generator components produced from a thermoelectric semiconductor material are preferably used for this purpose.
The use of thermoelectric generators for the direct conversion of heat into electrical energy is currently being examined in the automotive industry, for example in order to recover electrical energy for the internal vehicle energy system from the residual heat of the exhaust gases. In accordance with initial findings, the fuel consumption of the vehicle could thus be reduced significantly.
A problem here, however, is the arrangement of such thermoelectric generator components produced from a thermoelectric semiconductor material in the exhaust gas zone of the vehicle, in particular in the zone of the exhaust gas system. Thermoelectric generators or thermoelectric generator modules with a high resistance to temperature change that can reliably withstand temperature fluctuations in particular between 40° C. and 800° C. in the exhaust gas or hot zone are necessary for this purpose.
Further, a wide range of embodiments of metal-ceramic substrates, preferably in the form of printed circuit boards, are known, which for example have at least one ceramic layer and at least one metallisation applied to one of the surface sides of the ceramic layer, wherein the metallisation is structured to form conductive tracks, contact zones or fastening zones.
For example, the “DCB” (direct copper bonding) method is known for the connection of metal layers or sheets, preferably copper sheets or foils, to one another and/or to ceramic or ceramic layers, more specifically with use of metal or copper sheets or metal or copper foils that, on the surface sides thereof, have a layer or a coating (“melt layer”) formed from a chemical compound of the metal and a reactive gas, preferably oxygen. In this method, described by way of example in U.S. Pat. No. 3,744,120 or in DE-PS 23 19 854, this layer or this coating (“melt layer”) forms a eutectic system with a melting point below the melting point of the metal (for example copper), such that, by applying the metal foil or copper foil to the ceramic and by heating all layers, these layers can be interconnected, more specifically by melting the metal or copper substantially only in the zone of the melt layer or oxide layer. A DCB method of this type then comprises the following method steps by way of example:
Further, the “active solder method” is known from documents DE 22 13 115 and EP-A-153 618 for the connection of metal layers or metal foils forming metallisations, and in particular also of copper layers or copper foils, to a ceramic material or a ceramic layer. In this method, which is used specifically also to produce metal-ceramic substrates, a connection is produced between a metal foil, for example copper foil, and a ceramic substrate, for example an aluminium nitride ceramic, at a temperature between approximately 800-1000° C. with use of a hard solder, which, in addition to a main component such as copper, silver and/or gold, also contains an active metal. This active metal, which for example is at least one element from the group Hf, Ti, Zr, Nb, Ce, produces a connection between the hard solder and the ceramic as a result of a chemical reaction, whereas the connection between the hard solder and the metal is a metallic hard solder connection.
Thermoelectric generator components in the form of what are known as Peltier elements are also known, which with current flow generate a temperature difference, or, in the presence of a temperature difference generate a current flow. A Peltier element of this type basically comprises two cuboidal semiconductor elements, which have a different energy level, that is to say are either p-conducting or n-conducting, and are interconnected on one side via a metal bridge. Here, the metal bridges simultaneously also form the thermal connection areas, which are preferably applied to a ceramic and are thereby insulated from one another. A p-conducting and n-conducting cuboidal semiconductor element are therefore interconnected in each case via a metal bridge, more specifically in such a way that a series connection of the Peltier elements is produced.
Proceeding from the art mentioned above, it is an object of the invention to present a thermoelectric generator module and an associated metal-ceramic substrate and a method for production thereof, said thermoelectric generator module having a high resistance to temperature change and in particular enabling an arrangement of thermoelectric generator components in the exhaust gas zone of a motor vehicle.
One key aspect of the thermoelectric generator module according to the invention with a hot zone and cold zone having at least one first metal ceramic substrate, which is assigned to the hot zone and has a first ceramic layer and at least one structured metallisation applied to the first ceramic layer, and comprising at least one second metal ceramic substrate, which is assigned to the cold zone and has a second ceramic layer and at least one second structured metallisation applied to the second ceramic layer, and also including a number of thermoelectric generator components received between the first and second structured metallisation of the metal-ceramic substrates lies, inter alfa, in that the first metal-ceramic substrate assigned to the hot zone has at least one steel layer or high-grade steel layer, wherein the first ceramic layer is arranged between the first structured metallisation and the at least one steel layer or high-grade steel layer. By means of the steel layer or high-grade steel layer provided in the hot zone of the thermoelectric generator module according to the invention, a simple and reliable attachment of the module in the exhaust gas zone of a motor vehicle, in particular to or in the zone of the exhaust gas system of a motor vehicle, is particularly advantageously made possible. By way of example, the module can be directly attached to the exhaust of a motor vehicle via the steel layer or high-grade steel layer.
In a development of the invention, the thermoelectric generator module according to the invention is formed by way of example in such a way that at least one copper layer is provided between the first ceramic layer and the at least one steel layer or high-grade steel layer, and/or the second metal-ceramic substrate assigned to the cold zone has at least one corrosion-resistant metal layer, the second ceramic layer being arranged between the second structured metallisation and the corrosion-resistant metal layer.
The corrosion-resistant metal layer is formed by a high-grade steel layer, aluminium layer or copper layer, and/or the first and second metallisation are structured in such a way that they form a number of metal contact areas, which are preferably rectangular and/or square.
The longitudinal sides of a rectangular metal contact area are approximately twice as long as the broad sides thereof, and/or the longitudinal sides of the rectangular metal contact areas run parallel to the module transverse axis, and the broad sides of the rectangular metal contact areas run parallel to the module longitudinal axis.
The longitudinal sides are between 0.5 mm and 10 mm, and the broad sides are between 0.2 mm and 5 mm, and/or the metal contact areas are arranged in a matrix-like manner on the surface side of the respective ceramic layer.
The rectangular metal contact areas form rows running parallel to the module longitudinal axis and columns running parallel to the module transverse axis, and/or two adjacent rectangular metal contact areas have a spacing from 0.1 mm to 2 mm in the direction of the module transverse axis.
Two adjacent rectangular metal contact areas have a spacing from 0.1 mm to 2 mm in the direction of the module longitudinal axis.
The above-mentioned features being applicable in each case individually or in any combination.
In an advantageous variant of the thermoelectric generator module according to the invention, separation lines or predetermined break lines are introduced into the ceramic layer between the preferably rectangular metal contact areas arranged at a distance from one another on the respective ceramic layer, said lines preferably running in the direction of the module transverse axis and/or in the direction of the module longitudinal axis. These lines may be produced advantageously in the form of slits, notches and/or scores, the depth of the slits, notches and/or scores of a separation line or predetermined break line extending at least over a quarter of the layer thickness of the respective ceramic layer starting from the surface side of a ceramic layer receiving the metallisation. Material breaks in the ceramic caused by high temperature fluctuations can particularly advantageously be absorbed in a controlled manner due to the introduction of separation lines or predetermined break lines, such that, even if the ceramic layer should break, the functionality of the thermoelectric generator module continues to be ensured.
In a development of the invention, the thermoelectric generator module according to the invention is formed by way of example in such a way that the ceramic layer is produced from aluminium oxide, aluminium nitride, silicon nitride or aluminium oxide with zirconium oxide, and preferably has a layer thickness in the range between 0.1 mm and 1.0 mm.
The first and second structured metallisation are configured in the form of metal layers or metal foils, more specifically preferably from copper or a copper alloy, which preferably have a layer thickness in the range between 0.03 mm and 1.5 mm.
The metallisations are provided at least in part with a metal surface layer, more specifically for example a surface layer formed from nickel, silver or a nickel alloy or silver alloy.
The thermoelectric generator components are configured in the form of Peltier elements produced from a differently doped semiconductor material, the layer thickness of the semiconductor material preferably being between 0.5 mm and 8 mm.
The aforementioned features being usable in each case individually or in any combination.
In a further advantageous variant of the thermoelectric generator module, the thermal conductivity and reliability are improved as a result of the fact that the steel layer or high-grade steel layer and/or the corrosion-resistant metal layer is/are configured in a number of parts, at least two parts of the steel layer or high-grade steel layer and/or of the corrosion-resistant metal layer being distanced from one another in such a way that at least one externally freely accessible surface portion of the ceramic layer is produced and/or the steel layer or high-grade steel layer and/or the corrosion-resistant metal layer is/are structured or profiled and/or the steel layer or high-grade steel layer and/or the corrosion-resistant metal layer has/have a peripheral bead in a zone protruding outwardly beyond the edge region of the ceramic layer.
The aforementioned features again being usable in each case individually or in any combination.
The invention also relates to a metal-ceramic substrate for use in a thermoelectric generator module, comprising at least one ceramic layer and at least one structured metallisation applied to the ceramic layer, in which at least one steel layer or high-grade layer is particularly advantageously provided, the ceramic layer being arranged between the structured metallisation and the at least one steel layer or high-grade steel layer.
In an advantageous development, the metal-ceramic substrate is formed by way of example in such a way that at least one copper layer is provided between the ceramic layer and the at least one steel layer or high-grade steel layer.
The metallisation is structured in such a way that it forms a number of metal contact areas, which are preferably rectangular and arranged at a distance from one another.
The longitudinal sides of a rectangular metal contact area are approximately twice as long as the broad sides thereof, the longitudinal sides preferably being between 0.5 mm and 10 mm, and the broad sides preferably being between 0.2 mm and 5 mm.
The metal contact areas are arranged in a matrix-like manner on the surface side of the ceramic layer, more specifically in rows and columns, and/or separation lines or predetermined break lines are introduced into the ceramic layer between the metal contact areas and are preferably produced in the form of slits, notches and/or scores, and/or the slits, notches and/or scores of a separation line or predetermined break line extend over a quarter of the layer thickness of the ceramic layer starting from the surface side of a ceramic layer receiving the metallisation.
The ceramic layer is produced from aluminium oxide, aluminium nitride, silicon nitride or aluminium oxide with zirconium oxide and preferably has a layer thickness in the range between 0.1 mm and 1.0 mm.
The structured metallisation is configured in the form of a metal layer or metal foil, more specifically preferably from copper or a copper alloy which preferably has a layer thickness in the range between 0.03 mm and 1.5 mm.
The metallisation is provided at least in part with a metal surface layer, more specifically for example a surface layer formed from nickel, silver or a nickel alloy or silver alloy.
The aforementioned features being usable in each case individually or in any combination.
The invention also relates to a method for producing a metal-ceramic substrate, in particular in the form of a printed circuit board for a thermoelectric generator module, comprising at least one ceramic layer and at least one structured metallisation applied to the ceramic layer, in which at least one steel layer or high-grade steel layer is applied directly or indirectly to the surface opposite the ceramic layer.
The method according to the invention is configured by way of example such that the metallisation is structured in such a way that a number of rectangular metal contact areas are formed and are preferably arranged in a matrix-like manner on the ceramic layer, and/or separation lines or predetermined break lines are introduced into the ceramic layer between the rectangular metal contact areas by means of laser treatment or sawing, more specifically preferably in the form of slits, notches and/or scores.
The ceramic layer formed from aluminium oxide, aluminium nitride, silicon nitride or aluminium oxide with zirconium oxide and the metallisation produced by a copper layer or copper alloy are connected by DOB bonding.
The steel or high-grade steel layer is directly connected to the ceramic layer by hard soldering, active soldering or adhesive bonding.
The aforementioned features being usable in each case individually or in any combination.
The expressions “approximately”, “substantially” or “for example” in the context of the invention mean deviations from the exact value by +/−10% in each case, preferably by +/−5%, and/or deviations in the form of changes insignificant for function.
Developments, advantages and possible applications of the invention will also emerge from the following description of exemplary embodiments and from the figures. Here, all described features and/or features illustrated schematically are fundamental to the subject matter of the invention individually or in any combination.
The invention will be explained in greater detail hereinafter with reference to the figures illustrating exemplary embodiments, in which:
Each structured metallisation 4, 5 forms a plurality of preferably opposite contact areas 4′, 5′, the structured metallisations 4, 5 having a layer thickness between 0.03 mm and 0.6 mm, for example.
Differently doped thermoelectric generator components N, P are received between the opposite structured metallisations 4, 5 of the metal-ceramic substrates 2, 3, and more specifically each thermoelectric generator component N, P is thermally and electrically conductively connected to a contact area 4′ of the first structured metallisation 4 and to a portion of the opposite contact area 5′ of the second structured metallisation 5. Here, the thermoelectric generator components N, P are preferably connected in series and produced from a thermoelectric semiconductor material, that is to say are provided in the form of Peltier elements, each of which comprises an n-doped semiconductor element N and a p-doped semiconductor element P. By way of example, bismuth telluride or silicon germanium or manganese silicon can be used as p- and n-doped semiconductor material. The use of materials based on the chemical compounds PbTe, SnTe, ZnSb or of material families of the scutterudites, clathrates and/or chalcogenides is also possible. The thickness of the semiconductor element N, P is between 0.5 mm and 8 mm, for example.
To generate electrical energy, the hot zone 1a of the thermoelectric generator module 1 is thermally conductively connected to a heat source, and the cold zone 1b of the thermoelectric generator module 1 is thermally conductively connected to a cold source, such that a temperature difference is produced between the opposite hot and cold zone 1a, 1b. With use of the thermoelectric generator module 1, the hot zone 1a is arranged for example in the exhaust gas zone of the motor vehicle, preferably thermally conductively connected directly or indirectly to the exhaust gas system of the motor vehicle. The cold zone 1b is preferably cooled and for this purpose is incorporated by way of example into the coolant circuit of the motor vehicle. Due to the temperature difference between the hot and cold zone 1a, 1b, a heat flow is produced through the thermoelectric generator module 1 and is converted by means of the thermoelectric generator components N, P into electrical energy.
In the present exemplary embodiment according to
The first metal-ceramic substrate 2 in the present exemplary embodiment has at least one first ceramic layer 6, to the surface side 6′ of which the first structured metallisation 4 is applied. Similarly hereto, the second metal-ceramic substrate 3 comprises at least one second ceramic layer 7, to the surface side 7′ of which the second structured metallisation 5 is applied. The layer thickness of the first and second ceramic layer 6, 7 is between 0.1 mm and 1 mm, preferably between 0.3 and 0.4 mm.
In accordance with the invention, the first metal-ceramic substrate 2 assigned to the hot zone 1a has at least one steel layer or high-grade steel layer 8, the first ceramic layer 6 being arranged between the first structured metallisation 4 and the at least one steel layer or high-grade steel layer 8.
In a preferred variant, the at least one steel layer or high-grade steel layer 8 is provided for thermally conductive connection to a further metal component, for example the exhaust of a vehicle. For simplified fastening, the at least one steel layer or high-grade steel layer 8 can protrude at least in portions beyond the edge of the first ceramic layer 6 in accordance with
In a preferred exemplary embodiment according to
In an alternative variant according to
Further, the second metal-ceramic substrate 3 assigned to the cold zone 1b has at least one corrosion-resistant metal layer 10, preferably a high-grade steel layer, aluminium layer or copper layer, the corrosion-resistant metal layer 10 being applied to the surface side 7″ of the second ceramic layer 7 opposite the second structured metallisation 5. If the corrosion-resistant metal layer 10 is configured in the form of a copper layer, the connection can again be produced in a “direct-copper bonding” method or the AMB method, or, with configuration in the form of a high-grade steel layer or aluminium layer, by means of hard soldering, active soldering or adhesive bonding.
The metal contact areas 4′, 5′ formed by the first and second metallisation 4, 5 are preferably rectangular and each have two opposite longitudinal and broad sides a, b. These thus form what are known as pads for the connection of electronic components, more specifically the thermoelectric generator components N, P. To this end, a solder layer or solder is applied to the surface side of the metal contact areas 4′, 5′ opposite the ceramic layer 6, 7, and a soldered connection to the respective bond zone of the n- or p-doped semiconductor element N, P is produced, a metal bridge being produced between the n- and p-doped semiconductor element N, P in each case by one of the metal contact areas 4′, 5′, thus creating a Peltier element. The meandering course of the n- or p-doped semiconductor element N, P known per se and illustrated in the figures and of the metal contact areas 4′, 5′ connected thereto is thus produced.
To form the metal bridges, the longitudinal sides a of a rectangular metal contact area 4′, 5′ are approximately twice as long as the broad sides b of a rectangular metal contact area 4′, 5′, that is to say the longitudinal and broad sides a, b preferably have a ratio of 2:1. By way of example, the longitudinal side a is between 0.5 mm and 10 mm, and the broad side b is between 0.1 mm and 2 mm.
By way of example, a thermoelectric generator module 1 has a module longitudinal axis LA and a module transverse axis QA running perpendicularly hereto. In a preferred variant, the rectangular metal contact areas 4′, 5′ are arranged on the first or second ceramic layer 6, 7 in such a way that the longitudinal sides a of the rectangular metal contact areas 4′, 5′ run parallel to the module transverse axis QA, and the broad sides b of the rectangular metal contact areas 4′, 5′ run parallel to the module longitudinal axis LA. The first and second metal-ceramic substrate 2, 3 face one another here with their first and second structured metallisation 4, 5 in such a way that the rectangular metal contact areas 4′, 5′ are arranged with gaps therebetween, more specifically in such a way that, for example, by means of a rectangular metal contact area 5′ of the second structured metallisation 5, a metal bridge for an n- and p-doped semiconductor element N, P is formed, which are connected to two adjacent rectangular metal contact areas 4′ of the first structured metallisation 4. A series connection of a plurality of Peltier elements is thus formed along the columns S1 to Sy, the series connections of the Peltier elements in the columns S1 to Sy preferably being in turn connected to one another in series.
A schematic plan view of the contact areas 4′ of the first metal-ceramic substrate 2 is illustrated by way of example in
The contact areas 4′ assigned to a row R1, R2, Rx are distanced from one another and border one another via one of their longitudinal sides a. The distance c between two adjacent contact areas 4′ of a row R1, R2, Rx is between 0.1 mm and 2 mm by way of example, preferably between 0.4 mm and 0.6 mm.
Similarly, the contact areas 4′, 5′ assigned to a column S1, S2, S3, Sy are likewise arranged at a distance from one another on the respective ceramic layer 6, 7, more specifically for example at a distance d between 0.1 mm and 2 mm, preferably between 0.4 mm and 0.6 mm, two adjacent contact areas 4′, 5′ of a column S1, S2, S3, Sy bordering one another via one of their broad sides b.
Separation lines or predetermined break lines 11, 11′ are introduced in accordance with the invention into the ceramic layer 6, 7 between the rectangular metal contact areas 4′, 5′ arranged at a distance from one another on the respective ceramic layer 6, 7 and preferably run in the direction of the module transverse axis QA and/or in the direction of the module longitudinal axis LA. An area portion of the respective ceramic layer 6, 7 divided by separation lines or predetermined break lines 11, 11′ is therefore assigned to each rectangular metal contact area 4′, 5′, such that, in the case of a break of the ceramic layer 6, 7 along one or more separation lines or predetermined break lines 11, 11′, damage to the thermoelectric generator module 1 can be avoided.
The separation lines or predetermined break lines 11, 11′ can be provided in the form of slits, notches and/or scores and/or introduction of microcracks, which extend at least over a tenth of the layer thickness of the respective ceramic layer 6, 7 starting from the surface side 6′, 7′ receiving the metallisation 4′, 5′. The aforementioned recesses in the form of slits, notches and/or scores preferably have a depth from one quarter to three quarters of the layer thickness of the respective ceramic layer 6, 7, which may be between 0.1 mm and 1 mm.
The separation lines or predetermined break lines 11, 11′ are introduced into the ceramic layer 6, 7 after application of the structured metallisations 4, 5, preferably after completion of all soldering and bonding processes, for example more specifically by a laser treatment or a mechanical machining process, for example sawing. Laser-induced cutting methods or a thermal shock treatment are preferably used to introduce microcracks.
The ceramic layers 6, 7 consist by way of example of aluminium oxide (Al2O3) and/or aluminium nitride (AlN) and/or of silicon nitride (Si3N4) and/or of aluminium oxide with zirconium oxide (Al2O3+ZrO2). The first and second structured metallisations 4, 5 are preferably configured in the form of metal layers or metal foils, more specifically preferably from copper or a copper alloy. If the ceramic layers consist of one of the aforementioned ceramics (Al2O3, AlN, Si3N4, Al2O3+ZrO2), the metal layers or metal foils forming the structured metallisations 4, 5 are connected with use of the DCB method, more specifically in particular in the case of metallisations 4, 5 made of copper or copper alloys.
In addition, in a variant that is not illustrated, the metallisations 4, 5 can be provided at least in part with a metal, preferably corrosion-resistant surface layer, for example a surface layer consisting of nickel, silver or nickel alloys and silver alloys. A metal surface layer of this type is preferably applied, after the application of the metallisations 4, 5 to the ceramic layer 6, 7 and structuring thereof, to the rectangular metal contact areas 4′, 5′ thus produced. The surface layer is applied in a suitable method, for example galvanically and/or by chemical deposition and/or by spraying or cold gas spraying. In particular with use of nickel, the metal surface layer for example has a layer thickness in the range between 0.002 mm and 0.015 mm. With a surface layer consisting of silver, this is applied with a layer thickness in the range between 0.00015 mm and 0.05 mm, preferably with a layer thickness in the range between 0.01 μm and 3 μm. Due to a preferably corrosion-resistant surface coating of this type of the rectangular metal contact areas 4′, 5′, the application there of the solder layer or of the solder and the connection of the solder to the bonding zone of the thermoelectric generator components GB is improved.
Two further variants of the thermoelectric generator module 1 according to the invention are illustrated in
A schematic sectional illustration through a thermoelectric generator module 1 is illustrated by way of example in
To increase the effective surface of the steel layer or high-grade steel layer 8 and/or of the corrosion-resistant metal layer 10, the steel layer or high-grade steel layer 8 and/or the corrosion-resistant metal layer 10 is/are profiled in the variant according to
The steel layer or high-grade steel layer 8 is produced in a preferred variant from an alloyed steel with a proportion of molybdenum and/or nickel/cobalt. It is thus possible to adapt the coefficient of thermal expansion to the ceramic layer 6.
In particular, alloyed steel in the following composition can be used:
By way of example, alloyed steel consisting of 54% iron, 29% nickel and 17% cobalt is particularly suitable.
The invention has been described above on the basis of exemplary embodiments. It goes without saying that numerous changes and modifications are possible without departing from the inventive concept forming the basis of the invention.
Number | Date | Country | Kind |
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102012100757.2 | Jan 2012 | DE | national |
102012102090.6 | Mar 2012 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/DE2013/100020 | 1/22/2013 | WO | 00 | 6/24/2014 |