Claims
- 1. A method for producing an electronic article, the method comprising:applying a liquid coating layer of a positive-acting photoresist on a substrate surface, the photoresist comprising one or more photoacid generator compounds and a resin having photoacid-labile groups; by thermal treatment removing solvent from the photoresist coating layer to provide a photoresist layer thickness of at least about 1.5 microns; exposing the photoresist coating layer to patterned activating radiation; heating the exposed photoresist layer at a temperature lower than the temperature of the thermal treatment to remove solvent; and developing the photoresist coating layer to provide a resist relief image; wherein the temperature differential of the maximum temperature of the thermal treatment prior to exposure and the heating after exposure is from about 10° C. to about 40° C.
- 2. The method of claim 1 wherein the temperature differential is from about 10° C. to about 30° C.
- 3. The method of claim 1 wherein the photoresist comprises a resin that comprises phenolic units.
- 4. The method of claim 1 wherein the photoresist comprises a resin that comprises phenolic units and photoacid-labile acrylate units.
- 5. The method of claim 1 wherein the electronic article is a microelectronic wafer.
- 6. The method of claim 1 wherein solvent is removed to provide a resist layer thickness of at least about 3 microns.
- 7. The method of claim 1 wherein the photoresist coating layer is exposed to radiation having a wavelength of about 248 nm.
- 8. A method for producing an electronic article, the method comprising:applying a liquid coating layer of a positive-acting photoresist on a substrate surface, the photoresist comprising one or more photoacid generator compounds and a resin having photoacid-labile groups; by thermal treatment removing solvent from the photoresist coating layer to provide a photoresist layer thickness of at least about 3 microns; exposing the photoresist coating layer to patterned activating radiation; heating the exposed photoresist layer at a temperature lower than the temperature of the thermal treatment to remove solvent; and thereafter, developing the photoresist coating layer to provide a resist relief image.
- 9. The method of claim 8 wherein the temperature differential of the maximum temperature of the thermal treatment prior to exposure and the heating after exposure is at least about 10° C.
- 10. The method of claim 8 wherein the photoresist comprises a resin that comprises phenolic units.
- 11. The method of claim 8 wherein the photoresist comprises a resin that comprises phenolic units and photoacid-labile acrylate units.
- 12. The method of claim 8 wherein the electronic article is a microelectronic wafer.
- 13. The method of claim 8 wherein the photoresist coating layer is exposed to radiation having a wavelength of about 248 nm.
- 14. A method for producing an electronic article, the method comprising:applying a liquid coating layer of a positive-acting photoresist on a substrate surface, the photoresist comprising a photoacid generator compound and a resin having photoacid-labile groups; removing solvent from the photoresist coating layer to provide a photoresist layer thickness of at least about 3 microns; exposing the photoresist coating layer to patterned activating radiation; heating the exposed photoresist layer to a temperature not exceeding about 110° C.; and thereafter, developing the photoresist coating layer to provide a resist relief image.
- 15. The method of claim 14 wherein the exposed photoresist layer is heated to a temperature not exceeding about 100° C. prior to developing the photoresist coating layer.
- 16. The method of claim 14 wherein the photoresist comprises a resin that comprises phenolic units.
- 17. The method of claim 14 wherein the photoresist comprises a resin that comprises phenolic units and photoacid-labile acrylate units.
- 18. The method of claim 14 wherein the electronic article is a microelectronic wafer.
- 19. The method of claim 14 wherein solvent is removed to provide a resist layer thickness of at least about 5 microns.
- 20. The method of claim 14 wherein the photoresist coating layer is exposed to radiation having a wavelength of about 248 nm.
Parent Case Info
The present application claims the benefit of U.S. provisional application number 60/290,445 filed May 11, 2001, which is incorporated herein by reference in its entirety.
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Provisional Applications (1)
|
Number |
Date |
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|
60/290445 |
May 2001 |
US |