Patent Application
20110100297
The present invention relates to a thin-film solar cell manufacturing apparatus.
Priority is claimed on Japanese Patent Application No. 2008-149939 filed on Jun. 6, 2008, the contents of which are incorporated herein by reference.
Most current solar cells are a single crystal Si type solar cell and a polycrystal Si type solar cell. However, due to material shortages of Si or the like, demand has recently been increasing for thin-film solar cells formed with a thin-film Si-layer in which manufacturing costs are low and the risk of material shortages is low. Moreover, in addition to conventional thin-film solar cell with only an a-Si (amorphous silicon) layer, a demand for tandem-type thin-film solar cells has recently been increasing, in which the conversion efficiency of the tandem-type thin-film solar cells is improved by laminating an a-Si-layer and a μc-Si (microcrystalline silicon) layer.
A plasma-CVD apparatus is often used for forming a thin-film Si-layer (semiconductor layer) for the thin-film solar cells. As such a plasma-CVD apparatus, for example a single-wafer-type PE-CVD (plasma CVD) apparatus, an in-line type PE-CVD apparatus, a batch-type PE-CVD apparatus, and the like exist.
Here, when the conversion efficiency of a thin-film solar cell is taken into consideration, the μc-Si layer of the tandem-type thin-film solar cell needs to be formed with a film thickness (about 1.5 μm) of approximately five times larger than that of the a-Si layer. Additionally, since the μc-Si layer needs to uniformly form a good microcrystalline layer, there is a limit on increasing a film formation rate. Accordingly, there is a need to increase the number of batch processing to improve productivity. That is, an apparatus which can realize higher throughput at a lower film formation rate is needed.
Additionally, a CVD apparatus which can form a high-quality thin film and can lower manufacturing costs or maintenance costs is proposed in Patent Literature 1. The CVD apparatus of Patent Literature 1 includes a substrate (base) delivery-dispensing apparatus, a film forming chamber group which can store a plurality of substrates, a transfer chamber, and a chamber transfer apparatus. A shutter with airtightness is provided at an inlet and outlet port of a film forming chamber of a film forming section, and an inlet and outlet port of a storage chamber of the transfer chamber is always open. Also, when forming a Si-layer on a substrate, the transfer chamber is transferred to a position of the substrate delivery-dispensing apparatus by the chamber transfer apparatus, and a substrate carrier is transferred to the transfer chamber side. Additionally, the transfer chamber and the film forming section are joined together by the chamber transfer apparatus, the substrate carrier is transferred to the film forming section, and a Si-layer is formed on the substrate.
[Patent Literature 1] Japanese Unexamined Patent Application, First Publication No. 2005-139524
Meanwhile, in the CVD apparatus of Patent Literature 1, in order to form a thin-film Si-layer on a substrate, the transfer chamber is joined to the film forming section, the shutter of the film forming section is opened after the inside of the transfer chamber is brought into a vacuum state, and the substrate carrier is transferred to the film forming section from the transfer chamber. Thereafter, the substrate is heated within the film forming section, and a thin-film Si-layer is formed on the substrate by a plasma CVD method. After the film formation of the thin-film Si-layer is ended, the substrate is cooled, and the substrate can be conveyed to the other processing chambers. Accordingly, although Si-layers can be simultaneously formed on a plurality of substrates, a number of other steps are required besides the film forming step to the substrate, in order to form a thin-film Si-layer on a substrate. Additionally, in order to realize a high throughput, it is necessary to increase the installation number of CVD apparatuses. However, when the effects of the apparatuses on the installation area and cost are taken into consideration, there is a limit on increasing the installation number of the CVD apparatuses.
Additionally, a pinion gear which has a drive source for transferring a substrate carrier is provided within the film forming chamber of the film forming section related to the Patent Literature 1. That is, the substrate carrier can be transferred by driving the pinion gear. Additionally, since a Si-layer is formed on a substrate, and simultaneously the thin-film Si-layer deposits even within the film forming chamber of the film forming section, it is necessary to perform maintenance periodically. In the configuration of the CVD apparatus of the Patent Literature 1, it is necessary to provide a drive part which drives the pinion gear within the film forming chamber of the film forming section. Accordingly, the configuration within the film forming chamber of the film forming section becomes complicated, and a long time is taken for maintenance. Since it become impossible to use the film forming chamber during maintenance, there is a problem in that production efficiency decreases.
Additionally, when easiness of cleaning or the contamination caused by driving is taken into consideration, it is preferable that driven parts or rotating parts be few in the film forming chamber. That is, it is preferable to install a mechanism which transfers the substrate carrier outside the film forming chamber, and to install rotating parts or the like on the side of the substrate carrier.
The object of the present invention is to provide a thin-film solar cell manufacturing apparatus which can reduce the maintenance frequency of the film forming chamber and can improve production efficiency.
A thin-film solar cell manufacturing apparatus related to one aspect of the present invention includes: a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; transfer rail that is laid at the film forming chamber and the loading-ejecting chamber; a carrier that holds the substrate and moves along the transfer rail; and a carrier transfer mechanism that transfers the carrier, wherein, the carrier transfer mechanism is provided in the loading-ejecting chamber to transfer the carrier between the film forming chamber and the loading-ejecting chamber.
A configuration may be adopted in which the thin-film solar cell manufacturing apparatus further includes a substrate replacement chamber that is connected to the loading-ejecting chamber via a second opening-closing part; a substrate conveying mechanism that performs an operation of attaching the substrate to the carrier and an operation of removing the substrate from the carrier; a storage mechanism that stores at least one of the substrate attached to the carrier and the substrate removed from the carrier; wherein the carrier transfer mechanism transfers the carrier between the loading-ejecting chamber and the substrate replacement chamber; the substrate conveying mechanism performs the operation of attaching the substrate to the carrier and the operation of removing the substrate from the carrier within the substrate replacement chamber; and the substrate conveying mechanism holds the substrate by suctioning a rear surface of a surface to be film-formed of the substrate, and transfers the substrate between the substrate replacement chamber and the storage mechanism.
A configuration may be adopted in which the carrier holds the substrate in a vertical posture where the surface to be film-formed of the substrate is parallel to a direction of gravitational force.
A configuration may be adopted in which the carrier holds a plurality of the substrates so that the substrates are parallel to each other and face each other.
A configuration may be adopted in which the film forming chamber has a plurality of cathodes and anodes which face the anodes; and the carrier is transferred to the film forming chamber so that the substrate is inserted between the cathode and the anode.
A configuration may be adopted in which the film forming chamber has a film forming unit which has one cathode and two cathodes which face both surfaces of the cathode; and the carrier is transferred to the film forming chamber so that the substrate is inserted between the cathode and the anode.
The film forming chamber may have a plurality of the film forming units.
A configuration may be adopted in which the film forming unit is mounted removably from the film forming chamber.
A configuration may be adopted in which the storage mechanism stores the substrate in a horizontal posture in which the surface to be film-formed of the substrate is horizontal; the carrier stores the substrate in a vertical posture in which the surface to be film-formed of the substrate is vertical; and the substrate conveying mechanism has a rotating mechanism which rotates the substrate between the vertical posture and the horizontal posture.
A configuration may be adopted in which the thin-film solar cell manufacturing apparatus further includes a plurality of process modules in which one film forming chamber is connected to one loading-ejecting chamber; and the plurality of process modules is arranged in parallel.
A plurality of the film forming chambers may be connected to one loading-ejecting chamber.
A configuration may be adopted in which the thin-film solar cell manufacturing apparatus further includes a plurality of the process modules in which one film forming chamber is connected to one loading-ejecting chamber; the plurality of process modules are arranged in parallel; and one substrate conveying mechanism is installed in common to the plurality of process modules.
According to the above aspect, in the film forming chamber, only the transfer rail is provided without a drive source for transferring the carrier. Accordingly, it is not necessary to perform maintenance on a drive source within the film forming chamber unlike a conventional technique, and the maintenance frequency of the film forming chamber can be reduced to improve production efficiency.
According to the above aspect, the drive mechanism can suction only the rear surface of the surface to be film-formed of the substrate, and transfer the substrate. Therefore, particularly when moving a post-processed substrate, the substrate can be moved without contact with a film-formed region by the drive mechanism. Accordingly, the quality of the film formation face can be reliably maintained when the substrate is conveyed, and yield can be improved.
According to the above aspect, the area required for a substrate to move within the apparatus can be reduced. Thus, the apparatus can be miniaturized, and a larger number of apparatuses can be arranged in the same installation area as in the conventional technique. Accordingly, the number of substrates on which films can be simultaneously formed can be increased, and productivity can be improved. Additionally, when a film is formed in a state where a substrate is erected in the vertical direction so that the surface to be film-formed of the substrate becomes substantially parallel to the direction of gravitational force, particles generated when forming a film can be kept from depositing on the film formation face of the substrate. Accordingly, a high-quality semiconductor layer can be formed on the substrate.
According to the above aspect, since films can be simultaneously formed on a plurality of substrates in one carrier, productivity can be further improved.
According to the above aspect, while quality of the formed film can be maintained during movement by making the surface to be film-formed of a substrate substantially parallel to the horizontal direction when the substrate is stored in the conveying mechanism and conveyed to other processing chambers, and the area required for a substrate to move within the apparatus can be reduced by making the surface to be film-formed of the substrate substantially parallel to the direction of gravitational force when the substrate is attached to the carrier. Accordingly, production efficiency can be improved.
According to the above aspect, the number of substrates on which films can be simultaneously formed can be further increased by arranging a plurality of process modules in parallel. Therefore, even when a film is formed on a substrate at a low rate, high throughput can be realized. Additionally, the installation time (building time of a manufacturing line) of the apparatus when the manufacturing line is built in a factory or the like can be shortened by integrating the apparatus as the process module. Moreover, when maintenance of the film forming chamber is performed, it becomes unnecessary to stop the whole manufacturing line by performing maintenance every process module. Accordingly, a decrease in production efficiency during maintenance can be suppressed to a minimum.
According to the above aspect, a substrate attached to a carrier can be moved within the loading-ejecting chamber. Therefore, different film forming materials can be supplied in each film forming chambers respectively, and a plurality of layers with different film forming materials can be more efficiently formed on a substrate.
According to the aspect of the present invention, in the film forming chamber, only the transfer rail is provided without a drive source for transferring the carrier. Accordingly, it is not necessary to perform maintenance on a drive source within the film forming chamber unlike in the conventional technique, and the maintenance frequency of the film forming chamber can be reduced to improve production efficiency.
A thin-film solar cell manufacturing apparatus related to an embodiment of the present invention will be described below with reference to
The top cell 102 has a three-layer structure configured by laminating a p-layer 102p, an i-layer 102i, and an n-layer 102n in top-bottom order in the drawing. The three-layer structure of the p-layer 102p, i-layer 102i, and n-layer 102n of the top cell 102 is formed from amorphous silicon. Additionally, the bottom cell 104 has a three-layer structure configured by laminating a p-layer 104p, an i-layer 104i, and an n-layer 104n in top-bottom order in the drawing. The three-layer structure of the p-layer 104p, i-layer 104i, and n-layer 104n of the bottom cell 104 is made of microcrystalline silicon.
In the thin-film solar cell 100 configured in the above way, when an energy particle called a photon in sunlight strikes the i-layer, an electron and a hole are generated by a photovoltaic effect, the electron moves toward the n-layer and the hole moves toward the p-layer. Light energy can be converted into electrical energy by taking out the electron generated by the photovoltaic effect by the top electrode 101 and the back electrode 106.
Additionally, the intermediate electrode 103 is provided between the top cell 102 and the bottom cell 104, whereby a part of the light which passes through the top cell 102 and reaches the bottom cell 104 is reflected by the intermediate electrode 103 and incident on the top cell 102. Accordingly, the sensitivity characteristics of the cell are improved, and the power generation efficiency can be improved.
Additionally, the sunlight incident from the glass substrate W side passes through the respective layers, and is reflected by the back electrode 106. In order to improve the conversion efficiency of light energy, the thin-film solar cell 100 employs a texture structure which aims to achieve a prismatic effect which extends the optical path of the sunlight which incident on the top electrode 101, and the confinement effect of light.
As shown in
That is, the side plate portion 63 forms a part of a wall surface of the film forming chamber 11. An anode unit 90 and a cathode unit 68 which are arranged on both sides of the substrate W when forming a film are formed at a first surface 65 (surface which faces the inside of the film forming chamber 11) of the side plate portion 63. In the electrode unit 31 of the present embodiment, anode units 90 are respectively arranged on both sides of the cathode unit 68 so as to separate from each other so that films can be simultaneously formed on two substrates W by one electrode unit 31. Accordingly, substrates W are respectively provided on both sides of the cathode unit 68 so as to face each other in a state where the substrates are substantially parallel to the direction of gravitational force, and two anode units 90 are arranged outside the respective substrates W in the thickness direction in a state where the anode units face the substrates W, respectively. In addition, the anode unit 90 is constituted by a plate-shaped anode 67, and a heater H built in the anode unit 90.
Additionally, a drive device 71 for driving the anode units 90, and a matching box 72 for feeding electric power to the cathode intermediate member 76 of the cathode unit 68 when forming a film are attached to the second surface 69 of the side plate portion 63. Moreover, a connecting portion (not shown) for piping which supplies the film forming gas to the cathode unit 68 are formed at the side plate portion 63.
A heater H is built in each anode unit 90, and the heater H is a temperature control unit which controls the temperature of the substrate W. Additionally, the two anode units 90 and 90 are movable in directions (horizontal directions) in which the anode units approach and separate from each other using the drive device 71 provided at the side plate portion 63, and the separation distance between the substrate W and the cathode unit 68 can be controlled. Specifically, when forming films on the substrates W, the two anode units 90 and 90 move toward the cathode unit 68, and abut on the substrates W, and further move in directions in which the anode units approach the cathode unit 68, thereby adjusting the separation distance between the substrates W and the cathode unit 68 to a desired distance. Thereafter, films are formed, and after the end of film forming, the anode units 90 and 90 move in the directions in which the anode units separate from each other, so that the substrates W can be easily taken out from the electrode unit 31.
Moreover, each anode unit 90 is attached to the drive device 71 via a hinge (not shown), and can be turned (opened) until the surface 67A of the anode unit 90 (anode 67) on the side of the cathode unit 68 becomes substantially parallel to the first surface 65 of the side plate portion 63, in a state in which the electrode unit 31 is pulled out of the film forming chamber 11. That is, as shown by a dotted line in
The cathode unit 68 has a shower plate 75 (cathode), a cathode intermediate member 76, a discharge duct 79, and a floating capacitance member 82.
Shower plates 75 formed with a plurality of small holes (not shown) are arranged on the surfaces of the cathode unit 68 which face the anode units 90 (anodes 67), so that the film forming gas can be jetted toward the substrates W. Moreover, the shower plates 75 and 75 are cathodes (high-frequency electrodes) connected to the matching box 72. The cathode intermediate member 76 connected to the matching box 72 is provided between the two shower plates 75 and 75. That is, the shower plates 75 are arranged on both sides of the cathode intermediate member 76 in a state where the shower plates are electrically connected to the cathode intermediate member 76. The cathode intermediate member 76 and the shower plates (cathodes) 75 are formed from electrical conductors, and high frequency is applied to the shower plates (cathodes) 75 via the cathode intermediate member 76. For this reason, voltages of the same potential and phase for generating plasma are applied to the two shower plates 75 and 75.
The cathode intermediate member 76 is connected to the matching box 72 by a wiring which is not shown. A space portion 77 is formed between the cathode intermediate member 76 and each shower plate 75, and the film forming gas is supplied to the space portion 77 from a gas supply apparatus (not shown). The space portions 77 are separated from each other by the cathode intermediate member 76, and are individually formed so as to correspond to the shower plates 75 and 75, so that the gases discharged from the respective shower plates 75 and 75 are controlled independently. That is, the space portion 77 has a function as a gas supply passage. In this embodiment, the space portions 77 are separately formed so as to correspond to the shower plates 75 and 75 respectively. Thus, the cathode unit 68 has two types of gas supply passages.
Additionally, a hollow discharge duct 79 is provided at a peripheral edge portion of the cathode unit 68 over its whole circumference. The discharge duct 79 is formed with a vacuuming port 80 for evacuating the film forming gas or reactive by-products (powder) in a film formation space 81. Specifically, the vacuuming port 80 is formed so as to face the film formation space 81 which is formed between the substrate W and the shower plate 75 when forming a film. A plurality of vacuuming ports 80 are formed along the peripheral edge portion of the cathode unit 68, and is configured so that evacuation can be made substantially equal over its whole circumference. Additionally, the discharge duct 79 has a surface which faces the inside of the film forming chamber 11 at the lower portion of the cathode unit 68, and the surface of the discharge duct which faces the inside of the film forming chamber 11 is formed with an opening (not shown) so that the evacuated film forming gas can be discharged into the film forming chamber 11. The gas discharged into the film forming chamber 11 is evacuated to the outside through the vacuuming pipe 29 provided at the lateral lower portion 28 of the film forming chamber 11. Additionally, the floating capacitance member 82 which has at least a dielectric body or laminating space (a dielectric body and/or laminating space) is provided between the discharge duct 79 and the cathode intermediate member 76. The discharge duct 79 is connected to an installation potential. The discharge duct 79 also functions as a shield frame for preventing abnormal electrical discharge from the cathode 75 and the cathode intermediate member 76.
Moreover, masks 78 are provided at the peripheral edge portion of the cathode unit 68 so as to cover the part from the peripheral portion of the discharge duct 79 to the peripheral portion of the shower plate 75 (cathode). The masks 78 covers a holding piece 59A (refer to
Since such an electrode unit 31 is provided, in one electrode unit 31, two gaps are formed between the anode units 90 and the cathode unit 68 into which substrates W are inserted. Accordingly, films can be simultaneously formed on two substrates W by one electrode unit 31.
Additionally, the substrate W is disposed between each anode unit 90 and the cathode unit 68, and the anode unit 90 (anode 67) abuts on the substrate W, and is movable in order to adjust the separation distance between the substrate W and the cathode unit 68. Accordingly, when a thin-film Si-layer is formed on the substrate W by the plasma CVD method, the gap between the substrate W and the cathode unit 68 should be set to about 5 mm to 15 mm. However, the separation distance between the anode 67 and the cathode unit 68 can be adjusted before and after film formation by moving the anode 67. Accordingly, entrance and exit of the substrate W can be made easier. Additionally, when the substrate W enters and exits, it is possible to prevent the substrate W from being damaged by contacting with the anode 67 or the cathode unit 68. Moreover, by abutting (contacting) the anode 67 and the substrate W, the heat of the heater H can be effectively transferred to the substrate W when a film is formed while the substrate W is heated by the heater H. Accordingly, high-quality film forming can be performed.
Moreover, since the electrode unit 31 is configured to be attachable to and detachable from the film forming chamber 11, the periodical maintenance of removing the films deposited on the cathode unit 68 and anode units 90 of the electrode unit 31 can be easily performed. Additionally, if a spare electrode unit 31 is prepared, while the above electrode unit 31 is removed from the film forming chamber 11 for maintenance, the spare electrode unit 31 is attached instead, so that maintenance can be performed without stopping the manufacturing line. Accordingly, production efficiency can be improved. As a result, high throughput can be realized even when a semiconductor layer is formed on the substrate W at a low rate.
Referring back to
Additionally, the loading-ejecting chamber 13 is provided with a push-pull mechanism 38 (carrier transfer mechanism) for transferring the carrier 21 between the film forming chamber 11 and the loading-ejecting chamber 13 along the transfer rails 37. As shown in
Moreover, a transfer mechanism (not shown) for transferring the carrier 21 by a predetermined distance in a direction substantially orthogonal to a direction in which the transfer rails 37 are laid in plan view is provided within the loading-ejecting chamber 13 in order to simultaneously store the pre-processed substrate W1 and the post-processed substrate W2. A vacuuming pipe 42 for evacuating the inside of the loading-ejecting chamber 13 is connected to a lateral lower portion 41 of the loading-ejecting chamber 13, and a vacuum pump 43 is provided at the vacuuming pipe 42.
The substrate replacement robot 17 (substrate conveying mechanism) has a drive arm 45 (refer to
Additionally, the drive arm 45 has a rotating mechanism, can rotate a horizontal substrate W vertically and rotate a vertical substrate W horizontally.
Each frame 51 has an opening 56, a peripheral edge portion 57, and a holding portion 59. The surface to be film-formed (front surface WO) of the substrate W is exposed to the opening 56 formed in the frame 51, and the holding portion 59 holds and fixes the substrate W from both sides at the peripheral edge portion 57 of the opening 56. A biasing force caused by a spring or the like acts on the holding portion 59 which holds the substrate W. Additionally, the holding portion 59 has holding pieces 59A and 59B which abut the front surface WO which is the surfaces to be formed of the substrate W and the rear surface WU (back surface) (refer to
Also, in the thin-film solar cell manufacturing apparatus 10 of the present embodiment, four substrate film formation lines 16 each including the above-described film forming chamber 11, loading-ejecting chamber 13, and substrate replacement chamber 15 are arranged. Accordingly, films can be substantially simultaneously formed on twenty four substrates W.
Next, a method for forming a film on a substrate W using the thin-film solar cell manufacturing apparatus 10 of the present embodiment will be described. In addition, although drawings of one substrate film formation line 16 are used in this description, the other three substrate film formation lines 16 also form films on substrates according to almost the same flow.
As shown in
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Here, the operation of the push-pull mechanism 38 will be described. In addition, the operation when the carriers 21A located in the film forming chamber 11 are transferred into the loading-ejecting chamber 13 will be described here.
As shown in
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As shown in
At this time, the holding piece 59A of the holding portion 59 of the carrier 21 which abuts on the front surface WO of the pre-processed substrate W1 is displaced along with the movement of the pre-processed substrate W1 (of the anode unit 90). In addition, when the anode unit 90 has moved toward the direction away from the cathode unit 68, the restoring force of the spring or the like acts on the holding piece 59A so that this holding piece is displaced toward the holding piece 59B. The pre-processed substrate W1 at this time is held by the anode 67 and the holding piece 59A.
As shown in
Here, as shown in
Additionally, since the movement of the pre-processed substrate W1 stops when the outer-edge portion of the substrate W abuts on the mask 78, the flow passage height of the gas flow passage R, which is formed by the gap between the mask 78 and the shower plate 75 and between the mask 78 and the discharge duct 79, in the thickness direction is set so that the gap between the pre-processed substrate W1 and the cathode unit 68 reaches a predetermined distance.
As another aspect, the distance between the substrate W and the shower plate 75 (cathode) can also be arbitrarily changed by the stroke of the drive mechanism 71 by attaching the mask to the discharge duct 79 via an elastic body. In the above aspect, a case where the mask 78 and the substrate W abut on each other has been described above. However, the mask 78 and the substrate W may be arranged so as to leave a minute gap which limits the passage of the film forming gas.
In such a state, the film forming gas is jetted from the shower plate 75 of the cathode unit 68, and the matching box 72 is started to apply a voltage to the shower plate 75 (cathode) of the cathode unit 68, thereby generating plasma in the film formation space 81 to form a film on the front surface WO of the pre-processed substrate W1. At this time, the pre-processed substrate W1 is heated to a desired temperature by the heater H built in the anode 67.
Here, the anode unit 90 stops heating when the pre-processed substrate W1 reaches a desired temperature. However, plasma is generated within the film formation space 81 by applying a voltage to the cathode unit 68. Even if the heating of the anode unit 90 is stopped, there is a possibility that the temperature of the pre-processed substrate W1 may rise higher than a desired temperature due to the heat input from the plasma with the passage of time. In this case, the anode unit 90 can also be made to function as a radiator plate for cooling the pre-processed substrate W1 where the temperature has risen excessively. Accordingly, the temperature of the pre-processed substrate W1 is maintained at a desired temperature irrespective of the passage of the film formation processing time.
In addition, when a plurality of layers are formed through one film formation processing process, a film forming gas material to be supplied can be changed every predetermined time.
During film forming and after film forming, the gas or particles in the film formation space 81 are evacuated from the vacuuming ports 80 formed in the peripheral edge portion of the cathode unit 68. Along with this, the evacuated gas passes through the opening (opening formed in the surface of the discharge duct 79 which faces the inside of the film forming chamber 11 at the lower portion of the cathode unit 68) from the discharge duct 79 at the peripheral edge portion of the cathode unit 68 via the gas flow passage R, and flows to the outside from the vacuuming pipe 29 provided at the lateral lower portion 28 of the film forming chamber 11. In addition, the reactive by-products (powder) generated when forming a film can be collected and disposed of when being made to adhere to the inner wall surface of the discharge duct 79. Since the same processing as the above-described processing is performed in all the electrode units 31 within the film forming chamber 11, film forming can be simultaneously performed on six substrates W.
When the film forming is ended, the two anode units 90 are moved in directions away from each other by the drive device 71, and the post-processed substrates W2 and the frames 51 (holding pieces 59A) are returned to their original positions (refer to
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According to the thin-film solar cell manufacturing apparatus 10 of the present embodiment, the loading-ejecting chamber 13 is provided with a push-pull mechanism 38, and the carrier 21 can be transferred on the transfer rails 37 laid between the film forming chamber 11 and the loading-ejecting chamber 13 using the push-pull mechanism 38. Hence, in the film forming chamber 11, only the transfer rails 37 are provided without a drive source for transferring the carrier 21. Accordingly, it is not necessary to perform maintenance on a drive source within the film forming chamber 11 unlike a conventional technique, and the maintenance frequency of the film forming chamber 11 can be reduced to improve production efficiency.
Additionally, since the substrate replacement robot 17 suctions the rear surface WU of the surface to be film-formed of a substrate W and moves the substrate W between the substrate replacement chamber 15 and the substrate storage holder 19, particularly when moving the post-processed substrate W2, it is possible to avoid that the substrate replacement robot 17 contacts a film forming area (surface to be film-formed). Accordingly, the quality of the surface to be film-formed can be reliably maintained when the post-processed substrate W2 is conveyed, and the yield can be improved.
Additionally, in the present embodiment, transfer and film formation processing within the thin-film solar cell manufacturing apparatus 10 are performed in a state where the substrate W is erected in the vertical direction (state where the substrate W is arranged so that the surface to be film-formed thereof becomes substantially parallel to the direction of gravitational force). As a result, the area required for a substrate W to move within the thin-film solar cell manufacturing apparatus 10 can be reduced to miniaturize the apparatus, and a larger number of apparatuses can be arranged in the same installation area as a conventional technique. Accordingly, the number of substrates W on which films are simultaneously formed can be increased, and productivity can be improved. Additionally, when a film is formed on a substrate W in a state where the substrate is erected in the vertical direction, particles generated when forming a film can be kept from depositing on the film formation surface of the substrate W. Accordingly, a high-quality semiconductor layer can be formed on the substrate W.
Additionally, since one carrier 21 can hold a plurality of (two) substrates W, films can be simultaneously formed on a plurality of substrates W in one carrier 21, and productivity can be further improved. Moreover, since the push-pull mechanism 38 can simultaneously convey a plurality of carriers 21, the processing rate can be further raised.
Moreover, the substrate W can be arranged in the substrate storage holder 19 so that the surface to be film-formed thereof becomes substantially horizontal, and the substrate W can be arranged in the carrier 21 so that the surface to be film-formed thereof becomes substantially parallel to the direction of gravitational force. Accordingly, when the substrate W is stored in the substrate storage holder 19 and conveyed to other processing processes, film forming quality can be maintained during movement by making the surface to be film-formed of the substrate W substantially parallel to the horizontal direction. Additionally, the area required for the substrate W to move within the apparatus can be reduced by making the surface to be film-formed of the substrate W substantially parallel to the direction of gravitational force when the substrate W is attached to the carrier 21. Accordingly, production efficiency can be improved.
Moreover, since a plurality of process modules 14 in which the film forming chamber 11 and the loading-ejecting chamber 13 are connected to each other is arranged in parallel, the number of substrates W on which films can be simultaneously formed can be further increased, and even when the semiconductor layer is formed on a substrate W at a low rate, a high throughput can be realized. Additionally, the installation time (building time of a manufacturing line) of the apparatus when the manufacturing line is built in a factory or the like can be shortened by integrating the apparatus as the process module 14. Moreover, when maintenance of the film forming chamber 11 is performed, it becomes unnecessary to stop the whole manufacturing line by performing the maintenance for every process module 14. Accordingly, a decrease in production efficiency during maintenance can be suppressed to a minimum.
In addition, the evacuation process in a series of substrate film forming processes of the loading-ejecting chamber 13 can be reduced by simultaneously storing the post-processed substrate W2 and the pre-processed substrate W1 in the loading-ejecting chamber 13. Accordingly, productivity can be improved. Additionally, when the post-processed substrate W2 and the pre-processed substrate W1 are simultaneously stored in the loading-ejecting chamber 13, the heat accumulated in the post-processed substrate W2 is transferred to the pre-processed substrate W1, whereby heat exchange is performed. Thereby, a heating process which is usually performed subsequent to the pre-processed substrate W1 being stored in the film forming chamber 11, and a cooling process which is usually performed prior to the post-processed substrate W2 being carried out of the loading-ejecting chamber 13 can be omitted. As a result, productivity can be improved, and manufacturing costs can be reduced because devices used for conventional heating and cooling processes can be omitted.
In addition, it should be understood that the technical scope of the present invention is not limited to the above-described embodiment, but that various modifications of the above-described embodiment may be made without departing from the scope of the invention. That is, the specific shapes and configurations as mentioned in the embodiment are merely examples, and can be appropriately changed. For example, although the case where one loading-ejecting chamber is connected to one film forming chamber has been described in the present embodiment, as shown in
Additionally, the thin-film solar cell manufacturing apparatus may be arranged as shown in
Moreover, the thin-film solar cell manufacturing apparatus may be arranged as shown in
Although the present embodiment is configured so that one substrate replacement robot 17 is arranged to perform attachment and detachment of the substrate W, two substrate replacement robots 17 may be arranged, one substrate replacement robot 17 may be used only for the attachment of the substrate W, and the other substrate replacement robot 17 may be used only for the removal of the substrate W. Additionally, a configuration may be adopted in which two drive arms are provided in one substrate replacement robot 17, and two substrates W are simultaneously attached and removed.
According to the embodiment of the present invention, in the film forming chamber, only the transfer rails are provided without a drive source for transferring the carrier. Accordingly, it is not necessary to perform maintenance on a drive source within the film forming chamber unlike a conventional technique, and the maintenance frequency of the film forming chamber can be reduced to improve production efficiency.
10: THIN-FILM SOLAR CELL MANUFACTURING APPARATUS
11: FILM FORMING CHAMBER
13: LOADING-EJECTING CHAMBER
14: SUBSTRATE FILM FORMATION MODULE
15: SUBSTRATE REPLACEMENT CHAMBER
17: SUBSTRATE REPLACEMENT ROBOT (DRIVE MECHANISM)
19: SUBSTRATE STORAGE HOLDER (CONVEYING MECHANISM)
21: CARRIER
25: SHUTTER (FIRST OPENING-CLOSING PART)
36: SHUTTER (SECOND OPENING-CLOSING PART)
37: TRANSFER RAIL
38: PUSH-PULL MECHANISM (TRANSFER MECHANISM)
104: BOTTOM CELL (FILM)
W: SUBSTRATE
W1: PRE-PROCESSED SUBSTRATE
W2: POST-PROCESSED SUBSTRATE
| Number | Date | Country | Kind |
|---|---|---|---|
| 2008-149939 | Jun 2008 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2009/060143 | 6/3/2009 | WO | 00 | 1/5/2011 |
