Patent Application
20210159094
Embodiments of the present disclosure generally relate to a method and apparatus for distributing a gas in a processing chamber.
In the fabrication of integrated circuits, deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) are used to deposit films of various materials upon semiconductor substrates. In other operations, a layer altering process, such as etching, is used to expose a portion of a layer for further processing. Often, these processes are used in a repetitive fashion to fabricate various layers of an electronic device, such as a semiconductor device.
Conventional processing chambers utilize multiple designs of components to alter the flow of the gases to the substrate in order to achieve desired layer geometries thereon. However, having multiple designs of components often leads to downtime to replace one component with another component of a different design for a new process operation. Alternatively, multiple chambers are utilized with a different component design in each respective chamber. Such designs increase the cost of device manufacturing and lower the throughput of the processing systems.
Therefore, there is a need for improved components for processing substrates.
The present disclosure generally relates to a method and apparatus for distributing a gas in a processing chamber.
In one aspect, a gas distribution assembly is disclosed. The gas distribution assembly includes a faceplate and a blocker plate. An adjustment mechanism is coupled to the blocker plate. The adjustment mechanism is operable to set a distance between the faceplate and the blocker plate in order to modify a flow profile of a gas through the gas distribution assembly.
In another aspect, a processing chamber has a chamber body and a lid coupled thereto. A processing volume is defined within the chamber body and the lid wherein a substrate support is disclosed. A gas distribution assembly is coupled to the lid and includes a faceplate, a blocker plate, and an adjustment mechanism coupled to the blocker plate. The adjustment mechanism is operable to set a distance between the faceplate and the blocker plate.
In another aspect, a method for processing a substrate is disclosed. The method includes selecting a first processing gas; positioning a blocker plate relative to a faceplate in response to the selecting the first processing gas, wherein the position of the blocker plate achieves a desired flow distribution of the first processing gas; and flowing the first processing gas into a processing chamber.
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of scope, as the disclosure may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
The present disclosure generally relates to a gas distribution apparatus. The apparatus includes a faceplate and a blocker plate. An adjustment mechanism is coupled to the blocker plate and is operable to position the blocker plate relative to the faceplate in order to modify a flow profile of a gas flowing therethrough. A method of processing a substrate using the gas distribution is also disclosed.
To facilitate processing of a substrate W in the processing chamber 100, the substrate W is disposed on the upper surface of the support body 114, opposite of the shaft 116. A port 122 is formed in the sidewall 104 to facilitate ingress and egress of the substrate W into the processing volume 110. A door 124, such as a slit valve, is actuated to selectively allow the substrate W to pass through the port 122 to be loaded onto, or removed from, the substrate support 112. An electrode 126 is optionally disposed within the support body 114 and electrically coupled to a power source 128 through the shaft 116. The electrode 126 is selectively biased by the power source 128 to create an electromagnetic field to chuck the substrate W to the upper surface of the support body 114 and/or to facilitate plasma generation or control. In certain embodiments, a heater 190, such as a resistive heater, is disposed within the support body 114 to heat the substrate W disposed thereon.
The lid assembly 108 includes a lid 132, a blocker plate 134, and a faceplate 136. The faceplate 136 is coupled to the lid 132 and together with the lid 132 defines a gas volume 148. The blocker plate 134 is disposed in the gas volume 148 and coupled to the lid 132 by adjustment mechanisms 162. In one embodiment, the adjustment mechanisms 162 include one or more actuators 166 disposed through the lid 132. In other embodiments, the adjustment mechanisms 162 are support blocks, screws, spacers, extensions, and the like that are coupled directly to the lid 132. A plurality of apertures 150 are optionally formed through the blocker plate 134. Here, the blocker plate 134, the faceplate 136, and the adjustment mechanisms 162 define a gas distribution assembly.
An inlet port 144 is disposed within the lid 132. The inlet port 144 is coupled to a gas conduit 138. The gas conduit 138 allows a gas to flow from a first gas source 140, such as a process gas source, through the inlet port 144 into the first gas volume 146. A second gas source 142, such as a cleaning gas source, is optionally coupled to the gas conduit 138. The first gas source 140 supplies a process gas, such as an etching gas or a deposition gas, to the processing volume 110 to etch or deposit a layer on the substrate W. The second gas source 142 supplies a cleaning gas to the processing volume 110 in order to remove particle depositions from internal surfaces of the processing chamber 100.
Apertures 154 are disposed through the faceplate 136. The apertures 154 allow fluid communication between the processing volume 110 and the gas volume 148. During operation, a gas is permitted to flow from the inlet port 144 into the gas volume 148 wherein the gas is distributed through the gas volume 148 by the blocker plate 134, and the apertures 150 in the blocker plate 134 when included. Then, the gas flows through the apertures 154 in the faceplate 136 into the processing volume 110. In order to modulate the distribution of the gas through the gas volume 148, the actuators 166 are operable to raise and lower the blocker plate 134 using the adjustment mechanisms 162 such that a distance D between the blocker plate 134 and the faceplate 136 increases or decreases. In embodiments that do not include the actuators 166, the adjustment mechanisms 162 can be adjusted, for example, by increasing or decreasing a length thereof, such as a nut/screw combination or replacement of the adjustment mechanisms 162 with a different adjustment mechanism 162 having a different length.
The blocker plate 134 is coupled to the cap 246 by one or more extensions 268 which extend through the port 260 in the lid 232. The extensions 268 provide a rigid connection between the cap 246 and the blocker plate 134. In one embodiment, a single extension 268 having a cylindrical body with a gas flow path from the cap 246 to the blocker plate 134 defined therein is used. In other embodiments, multiple extensions 268 are used and are, for example, arranged in a polar array about a central axis of the blocker plate 134.
The cap 246 is coupled to the lid 232 by one or more adjustment mechanisms 262. The adjustment mechanisms 262 optionally include one or more actuators 266. In these cases, the actuators 266 are operable to raise and lower the cap 246 thereby changing a distance between the faceplate 136 and the blocker plate 134 which is coupled to the adjustment mechanisms 262 by the extensions 268 and the cap 246. In other embodiments, the adjustment mechanisms 262 may be screws, standoffs, blocks, spacers, or the like which may be fixed or movable in order to modulate the distance between the faceplate 136 and the blocker plate 134. For example, the adjustment mechanisms 262 may be blocks that may be replaced with blocks of different lengths to change the spacing between the blocker plate 134 and the faceplate 136. In another example, the adjustment mechanisms 262 are threaded jacks (i.e., a screw and nut member) which may be lengthened or shortened to raise and lower the cap 246. The bellows 264 maintains isolation of the gas volume 148 while allowing the adjustment mechanism 262 to move in order to position the blocker plate 134 as desired.
Each blocker plate member 334a, 334b, 334c is coupled to a respective adjustment mechanism 362a, 362b, 362c. Here, the adjustment mechanisms 362a, 362b, 362c representatively extend through the lid 332 and couple to an actuator (not shown). However, other types and/or number of adjustment mechanisms 362 may be used herewith. In the embodiment of
In another example, a controller 390 is optionally coupled to the adjustment mechanisms 362a, 362b, and 362c, such as, through actuators (not shown). The controller 390 is operable to raise and lower the adjustment mechanisms 362a, 362b, 362c, and the respective blocker plate members 334a, 334b, 334c to desired positions. For example, a control scheme may be stored in the controller 390 for processing a substrate using predefined values for the distances D1, D2, and D3 to achieve a desired gas distribution across the substrate. A sensor 392 is also optionally disposed in the lid 332 and coupled to the controller 390. In one example, the sensor 392 is utilized to determine a gas distribution or flow of the gas from the blocker plate 334 to the faceplate 336. The sensor 392 provides a measured or determined parameter to the controller 390 which may adjust the processing system, including the distance between the blocker plate 334 and the faceplate and/or a flow from a gas source, to achieve a desired gas distribution.
At operation 404, a position of the blocker plate (i.e., relative location of the blocker plate to the faceplate) is established in relation to the selected first processing gas. The blocker plate is positioned relative to the faceplate to achieve a desired distribution of the first processing gas across the substrate. The blocker plate may be a single body or formed form multiple members as described herein. The blocker plate may be positioned by an operator or automatically by a control system.
At operation 406, the first processing gas is flowed into a processing chamber having a substrate disposed therein. The position of the blocker plate is optionally adjusted during the flowing of the first processing gas in order to maintain a desired distribution of the first processing gas across the substrate. In one example, the positon of the blocker plate is adjusted by a controller in response to a measure parameter by a sensor.
At operation 408, a second processing gas is selected. The second processing gas may be, for example, a precursor gas for a deposition process, an etching gas, or a cleaning gas, among others.
At operation 410, a second positon of the blocker plate is determined in response to the selection of the second processing gas. The blocker plate is positioned relative to the faceplate again to achieve a desired distribution of the second processing gas across the substrate. In one example, the second positon of the blocker plate is different than the first position established at operation 404. However, the first position and the second position may be the same.
At operation 412, the second processing gas is flowed into the processing chamber. The position of the blocker plate is again optionally adjusted during the flowing of the first processing gas in order to maintain a desired distribution of the first processing has across the substrate as described above.
The embodiments described herein advantageously provide tunable flow of a gas through a gas distribution apparatus. In one aspect, a single distribution apparatus can be utilized for multiple process steps which increases throughput of the processing chamber used therewith since downtime of the processing chamber to replace a component with another component of a different design is not required. Further, the properties of the film formed on the substrate are improved by providing better control of the flow of the gas to the substrate. For example, zones can be established corresponding to the desired flow(s) of a process gas thereto. The embodiments herein provide increased control of the gas distribution to the respective zones. Still further, the center-to-edge radial flow profile can be controlled to provide various shapes thereof.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201841016760 | May 2018 | IN | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/US2019/025481 | 4/3/2019 | WO | 00 |
