Claims
- 1. A method of forming a contact opening for a semiconductor device, comprising:
providing a substrate having an active element on a first surface thereof, a barrier layer over said substrate first surface, a silicon hard mask over said barrier layer, and a resist layer patterned to define at least one aperture therein over said silicon hard mask; etching said silicon hard mask and said barrier layer through said at least one aperture in said resist layer to expose said active element; depositing a silicidable material over said silicon hard mask; annealing said silicidable material to form a mask silicide layer from a reaction between said silicon hard mask and said silicidable material; and removing said mask silicide layer.
- 2. The method of claim 1, wherein said removing said mask silicide layer is effected by abrasion.
- 3. The method of claim 1, wherein said removing said mask silicide layer is effected by chemical mechanical planarization.
- 4. A method of forming a contact for a semiconductor device, comprising:
providing a substrate having an active element on a first surface thereof, a barrier layer over said substrate first surface, a silicon hard mask over said barrier layer, and a resist layer patterned to define at least one aperture therein over said silicon hard mask; etching a contact opening in said silicon hard mask and said barrier layer through said at least one aperture in said resist layer to expose said active element; depositing a silicidable material over said silicon hard mask; annealing said silicidable material to form a mask silicide layer from a reaction between said silicon hard mask and said silicidable material; and depositing a conductive material within said contact opening.
- 5. The method of claim 4, further comprising removing said mask silicide layer.
- 6. The method of claim 5, wherein said removing said mask silicide layer is effected by abrasion.
- 7. The method of claim 5, wherein said removing said mask silicide layer is effected by chemical mechanical planarization.
- 8. The method of claim 5, wherein said mask silicide layer is removed prior to depositing said conductive material within said contact opening.
- 9. The method of claim 5, wherein said mask silicide layer is removed after depositing said conductive material within said contact opening.
- 10. A method of forming a DRAM chip, comprising:
providing a substrate having an active element on a first surface thereof, a dielectric layer over said substrate first surface, a polysilicon mask over said barrier layer, and a resist layer patterned to define at least one aperture therein over said silicon hard mask; etching said polysilicon mask and said dielectric layer through said at least one aperture in said resist layer to expose said active element; depositing a silicidable material over said polysilicon mask; annealing said silicidable material to form a mask silicide layer from a reaction between said polysilicon mask and said silicidable material; and removing said mask silicide layer.
- 11. The method of claim 10, wherein said removing said mask silicide layer is effected by abrasion.
- 12. The method of claim 10, wherein said removing said mask silicide layer is effected by chemical mechanical planarization.
- 13. A method of forming a DRAM chip, comprising:
providing a substrate having an active element on a first surface thereof, a dielectric layer over said substrate first surface, a polysilicon mask over said barrier layer, and a resist layer patterned to define at least one aperture therein over said silicon hard mask; etching said polysilicon mask and said dielectric layer through said at least one aperture in said resist layer to expose said active element; depositing a silicidable material over said polysilicon mask; annealing said silicidable material to form a mask silicide layer from a reaction between said polysilicon mask and said silicidable material; and depositing a conductive material within said contact opening.
- 14. The method of claim 13, further comprising removing said mask silicide layer.
- 15. The method of claim 14, wherein said removing said mask silicide layer is effected by abrasion.
- 16. The method of claim 14, wherein said removing said mask silicide layer is effected by chemical mechanical planarization.
- 17. The method of claim 14, wherein said mask silicide layer is removed prior to depositing said conductive material within said contact opening.
- 18. The method of claim 14, wherein said mask silicide layer is removed after depositing said conductive material within said contact opening.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of application Ser. No. 09/651,462, filed Aug. 30, 2000, pending.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09651462 |
Aug 2000 |
US |
Child |
10107764 |
Mar 2002 |
US |