Claims
- 1. A below 193 nm VUV transmitting glass photomask substrate for photolithography at wavelengths of about 157 nm, said glass photomask substrate comprising a dry high purity direct deposit vitrified silicon oxyfluoride glass with an OH content below 20 ppm by weight, a Cl content below 0.1% by weight, and a fluorine content in the range of 0.01 to 7 weight percent.
- 2. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a fluorine content in the range of 0.01 to 2 weight percent.
- 3. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a fluorine content in the range of 0.01 to 0.5 weight percent.
- 4. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a fluorine content in the range 0.1 to 0.4 weight percent.
- 5. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Cl content≦0.08% by weight.
- 6. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Cl content≦0.06% by weight.
- 7. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Cl content≦0.04% by weight.
- 8. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Cl content≦0.03% by weight.
- 9. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Cl content≦0.02% by weight.
- 10. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Cl content below 5 ppm.
- 11. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Cl content below 1 ppm.
- 12. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass is Cl-free.
- 13. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has an OH content below 10 ppm by weight.
- 14. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has an OH content below 1 ppm by weight.
- 15. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a hydrogen content below 1×1017 molecules/cm3.
- 16. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Fe content no greater than 0.00004% by weight.
- 17. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass has a Zr content no greater than 0.00004% by weight.
- 18. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass contains a plurality of O2 molecules.
- 19. A glass photomask substrate as claimed in claim 1, wherein said dry high purity direct deposit vitrified silicon oxyfluoride glass contains a plurality of O2 molecules with an O2 concentration of at least 1015 O2 mole/cc.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority to, and the benefit of, U.S. Provisional Patent Application No. 60/200,405 filed Apr. 8, 2000 entitled “Water-Free Fused Silica And Method Therefor,” and U.S. Provisional Patent Application No. 60/258,132 filed Dec. 22, 2000 entitled “Substantially Dry, Silica-Containing Soot, Fused Silica And Optical Fiber Soot Preforms, Apparatus, Methods And Burners For Manufacturing Same And Method Therefor,” and U.S. Provisional Patent Application No. 60/271,136 filed Feb. 24, 2001, entitled Vacuum Ultraviolet Transmitting Silicon Oxyfluoride Lithography Glass, and U.S. Provisional Patent Application No. 60/271,135, filed Feb. 24, 2001, entitled Oxygen Doping of Silicon Oxyfluoride Glass, and PCT Application WO 01/17919, Sep. 8, 2000, entitled Pure Fused Silica, Furnace And Method, the disclosures of which are hereby incorporated by reference herein.
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|
Number |
Date |
Country |
|
60/200405 |
Apr 2000 |
US |
|
60/258132 |
Dec 2000 |
US |
|
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Feb 2001 |
US |
|
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US |