Claims
- 1. A method for heating a substrate having a first surface comprising:
providing a hot plate having a first surface and a second surface with a first recess defined by a bottom and at least one wall disposed within the first surface; applying heat to the second surface of the hot plate; and positioning the first surface of the substrate above the first recess and proximate the first surface of the hot plate such that the substrate is disposed generally parallel to the first surface of the hot plate with an outer edge of the first surface of the substrate disposed proximate the at least one wall defining the first recess.
- 2. The method of claim 1 further comprising positioning the substrate above the first recess and proximate the hot plate such that at least a portion of the outer edge of the first surface of the substrate contacts the first surface of the hot plate proximate the at least one wall defining the first recess.
- 3. The method of claim 2 further comprising varying the configuration of the at least one wall defining the first recess to vary the portion of the outer edge of the first surface of the substrate in contact with the first surface of the hot plate.
- 4. The method of claim 2 further comprising varying the portion of the outer edge of the first surface of the substrate maintained in contact with the first surface of the hot plate according to at least one characteristic of the substrate.
- 5. The method of claim 4 wherein the at least one characteristic of the substrate is substrate thickness.
- 6. The method of claim 1 further comprising:
providing a second recess disposed proximate a center region of the first recess; and the second recess defined by at least one wall and a bottom.
- 7. A method for baking a substrate comprising:
placing a first surface of the substrate on a first surface of a hot plate with the first surface of the substrate disposed over at least one recess in the first surface of the hot plate, the at least one recess defined by at least one wall and a bottom surface; maintaining the first surface of the substrate at a selected distance from the bottom surface of the at least one recess; applying heat to a second surface of the hot plate; and uniformly heating the substrate.
- 8. The method of claim 7 further comprising:
maintaining an outer edge of the first surface of the substrate in contact with the first surface of the hot plate proximate the at least one wall of the at least one recess; and positioning the substrate such that the at least one recess is covered.
- 9. The method of claim 8 further comprising varying the contact between the outer edge of the first surface of the substrate and the hot plate according to substrate thickness.
- 10. The method of claim 8 further comprising displacing at least a portion of the bottom surface of the at least one recess with respect to the first surface of the hot plate.
- 11. The method of claim 8 further comprising varying the at least one wall of the at least one recess such that the contact between the outer edge of the first surface of the substrate and the hot plate is varied.
- 12. An apparatus for baking a substrate comprising:
a hot plate having respective first and second surfaces; a first recess disposed in the first surface of the hot plate; the first recess defined in part by at least one wall and a bottom; the first recess having a generally uniform depth defined by the distance between the bottom of the first recess and the first surface of the hot plate; and the first recess sized such that at least a portion of an outer edge of the substrate contacts at least a portion of the first surface of the hot plate when the substrate is disposed over the first recess.
- 13. The apparatus of claim 12 further comprising the first recess sized such that approximately one tenth of an inch of the outer edge of the substrate contacts the first surface of the hot plate when the substrate is positioned to cover the first recess.
- 14. The apparatus of claim 12 further comprising the first recess having a depth between approximately six thousandths of an inch (0.006″) to eight thousandths of an inch (0.008″).
- 15. The apparatus of claim 12 further comprising the first recess defined by four walls having approximately equal lengths.
- 16. The apparatus of claim 12 further comprising:
a second recess disposed in the second surface of the plate; and the second recess defined by at least one wall and having an approximately uniform depth.
- 17. The apparatus of claim 12 further comprising the plate made from silicon carbide (SiC).
- 18. The apparatus of claim 12 further comprising:
at least one robot access cutout disposed on a first edge of the plate; and at least two robot access cutouts disposed on a second edge of the plate opposite the first edge.
- 19. The apparatus of claim 12 further comprising a heat source operably coupled to the second surface of the plate.
- 20. The apparatus of claim 12 further comprising:
a recess disposed proximate a center region of the bottom of the first recess; and the recess disposed within the first recess sized such that an approximately uniform temperature is achieved at a first surface of the substrate disposed over the first recess.
- 21. A system for baking a substrate comprising:
a hot plate having respective first and second surfaces; a first recess having an approximately uniform depth defined by a bottom and at least one wall disposed in the first surface of the hot plate; a second recess having an approximately uniform depth defined by a bottom and at least one wall disposed in the second surface of the hot plate; a heating source operably coupled to the second recess; the hot plate operable to maintain the substrate proximate the first surface such that the first recess is covered and a portion of a first surface of the substrate is in contact with the first surface of the hot plate proximate the wall defining the first recess; and the hot plate further operable to establish an approximately uniform temperature in the substrate during baking.
- 22. The system of claim 21 further comprising a robot mechanism operable to position the substrate on the hot plate.
- 23. The system of claim 21 further comprising:
a recess disposed in the bottom of the first recess; and the recess sized to achieve an approximately uniform temperature in the substrate during baking.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims priority from U.S. Provisional Patent Application Serial No. 60/259,403 filed Michael David Webster on Dec. 28, 2000, and entitled “Variable Surface Hot Plate for Improved Bake Uniformity of Thick Square Substrates.”
Provisional Applications (1)
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Number |
Date |
Country |
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60259403 |
Dec 2000 |
US |