Voltage reset circuits for a semiconductor memory device using option fuse circuit and methods of resetting the same

Abstract

Control circuits for a voltage regulator of a semiconductor memory device include an option fuse circuit and a fusing control circuit. The option fuse circuit includes a plurality of fuses and a selection circuit that selects one of the plurality of fuses responsive to a control signal. An output voltage associated with the voltage reset circuit is adjusted responsive to a state of the selected one of the plurality of fuses. A fusing control circuit generates the control signal to allow multiple adjustments of the output voltage by the voltage reset circuit. The option fuse circuit may be a plurality of option fuse circuits and the output voltage may be adjusted responsive to the states of the respective selected ones of the plurality of fuses of the option fuse circuits.

Description

BRIEF DESCRIPTION OF THE FIGURES

Some embodiments of the present invention will be described with reference to the following figures, wherein like reference numerals refer to like parts throughout the various figures unless otherwise specified. In the figures:

FIG. 1 is a block diagram illustrating the overall structure of a voltage reset circuit for a semiconductor memory device according to some embodiments of the present invention;

FIG. 2 is a circuit diagram illustrating one of the plural option fuse circuits shown in FIG. 1 according to some embodiments of the present invention; and

FIG. 3 is a flow chart illustrating a method of resetting a voltage in a semiconductor memory device according to some embodiments of the present invention.

Claims

1. A resettable control circuit for a voltage regulator of a semiconductor memory device, comprising: an option fuse circuit including a plurality of fuses and a selection circuit that selects one of the plurality of fuses responsive to a control signal, wherein an output voltage associated with the voltage reset circuit is adjusted responsive to a state of the selected one of the plurality of fuses; anda fusing control circuit that generates the control signal to allow multiple adjustments of the output voltage by the voltage reset circuit.

2. The control circuit of claim 1, wherein the option fuse circuit comprises a plurality of option fuse circuits and wherein the output voltage is adjusted responsive to the states of the respective selected ones of the plurality of fuses of the option fuse circuits.

3. The control circuit of claim 2, wherein the fusing control circuit includes a fuse option circuit having a reset fuse that generates the control signal.

4. The control circuit of claim 2, wherein the selection circuit comprises a plurality of switch transistors.

5. The control circuit of claim 2, wherein the plurality of fuses of ones of the option fuse circuits comprises a main fuse and a spare fuse and wherein the fusing control circuit generates the control signal to select the main fuse for a first adjustment of the output voltage and the spare fuse for a subsequent adjustment of the output voltage.

6. The control circuit of claim 5, wherein the control signal comprises a common control signal applied to each of the option fuse circuits having a first state that selects the main fuse and a second state that selects the spare fuse of each of the option fuse circuits.

7. The control circuit of claim 6, wherein the selection circuit comprises a first switch transistor associated with the main fuse and a second switch transistor associated with the spare fuse and wherein the common control signal comprises a first signal coupled to the first switch transistor and a second signal coupled to the second switch transistor.

8. The control circuit of claim 6, wherein the spare fuse comprises a plurality of spare fuses associated with respective subsequent adjustments of the output voltage.

9. The control circuit of claim 6, wherein the control signal comprises a first control signal that selects the main fuse and a second control signal that selects the spare fuse and wherein the fusing control circuit comprises: a reset fuse connected between a power source voltage and a first node;a first transistor selectively connecting the first node and a ground responsive to a first reset pulse;a first inverter logically inverting a voltage of the first node based on a cutoff state of the reset fuse connected to the first node when the first reset pulse is activated;a second transistor selectively connecting the first node and the ground responsive to an output of the first inverter;a second inverter logically inverting an output of the first inverter to generate the second control signal; anda third inverter logically inverting an output of the second inverter to generate the first control signal.

10. The control circuit of claim 7, wherein each option fuse circuit comprises: a first switch transistor selectively connecting the main fuse and a second node responsive to the first control signal, wherein the main fuse is coupled between the power source voltage and the first switch transistor;a second switch transistor selectively connecting the spare fuse and the second node responsive to the second control signal, wherein the spare fuse is coupled between the power source voltage and the second switch transistor;a third transistor selectively connecting the second node and the ground responsive to a second reset pulse;a fourth inverter logically inverting a voltage of the second node based on a cutoff state of a selected one of the main and spare fuse connected to the second node when the second reset pulse is activated;a fourth transistor selectively connecting the second node and the ground responsive to an output of the fourth inverter; andfifth and sixth inverters sequentially inverting an output of the fourth inverter.

11. A control circuit for a voltage regulator of a semiconductor memory device, comprising: a plurality of option fuse circuits, each of which includes a main fuse and at least one spare fuse; anda fusing control circuit that generates a control signal to select the main fuse or the spare fuse in each option fuse circuit using a fuse option with a reset fuse, wherein each option fuse circuit is configured to alternatively cut a selected one of the main and spare fuses off responsive to a decoding result for an output voltage.

12. A method of resetting an output voltage in a semiconductor memory device, the method comprising: adjusting the output voltage by selectively cutting main fuses included in a plurality of option fuse circuits;cutting a reset fuse of a fusing control circuit coupled to the plurality of option fuse circuits to enable a reset of the output voltage by selecting a spare fuse included each of in the plurality of option fuse circuits rather than the main fuses;activating the spare fuses included in the option fuse circuits and deactivating the main fuses responsive to cutting off the reset fuse; andresetting the output voltage to a desired level by selectively cutting ones of the activated spare fuses.