Claims
- 1. A method for segregating an integrated circuitry chip from a wafer, the method comprising:
circumscribing the integrated circuitry chip with at least one recess, said at least one recess having a particular depth extending into the wafer from a front side of the wafer; and etching bulk wafer material from a back side of the wafer to achieve a particular thickness of the wafer, said thickness of the wafer being at most equal to said particular depth; wherein said etching step comprises use of a magnetic mirror plasma.
- 2. The method of claim 1 wherein said step of removing bulk wafer material comprises etching at atmospheric pressure.
- 3. The method of claim 1 wherein said particular depth is at most equal to a depth of at least one integrated circuitry feature.
- 4. The method of claim 3 wherein said at least one integrated circuitry feature is a via.
- 5. The method of claim 1, the method further comprising the step of:
forming a recess extending from the front side of the wafer, the recess having a depth at least equal to said particular depth.
- 6. The method of claim 1, the method further comprising the step of removing through mechanical grinding a portion of the bulk wafer material from the back side of the wafer.
- 7. A system for segregating an integrated circuitry chip from a wafer, the system comprising:
means for circumscribing the integrated circuitry chip with at least one recess on a front side of the wafer, said at least one recess having a particular depth; and etching means for removing bulk wafer material from a back side of the wafer to achieve a particular thickness of the wafer, said thickness of the wafer being at most equal to said particular depth; wherein said etching means comprises a magnetic mirror plasma.
- 8. The system of claim 7 wherein said etching means comprises an atmospheric plasma etcher.
- 9. The system of claim 7 wherein said particular depth is at most equal to a depth of at least one integrated circuitry feature.
- 10. The system of claim 7, further comprising means for laminating said front side of the wafer.
- 11. The system of claim 7, further comprising means for transferring the integrated circuitry chip.
- 12. The system of claim 7, the system further comprising etching means for removing a residue material from said back side of the wafer.
- 13. The system of claim 7, the system further comprising means for forming a recess extending from the front side of the wafer, the recess having a depth at least equal to said particular depth.
- 14. A method for segregating an integrated circuitry chip from a wafer and exposing at least one integrated circuitry feature, the at least one integrated circuitry feature having a depth extending from a front side of the wafer, the method comprising:
circumscribing the integrated circuitry chip with at least one recess on the front side of the wafer, said at least one recess having a particular depth; etching bulk wafer material from a back side of the wafer to achieve a particular thickness of the wafer, said thickness of the wafer being at most equal to said depth of the at least one integrated circuitry feature and at most equal to said particular depth; wherein said etching step comprises use of a magnetic mirror plasma.
- 15. The method of claim 14 wherein said step of etching bulk wafer material comprises the step of etching at atmospheric pressure.
- 16. The method of claim 14 wherein said step of etching bulk wafer material comprises the step of etching with a plasma at atmospheric pressure.
- 17. The method of claim 14, further comprising the step of controlling said magnetic mirror plasma using a magnetic mirror field and an orthogonally rotating electric field.
- 18. The method of claim 14, further comprising the steps of:
controlling said magnetic mirror plasma using a magnetic mirror field and an orthogonally rotating electric field; wherein the magnetic mirror plasma chamber is constructed of essentially non-ferrous materials.
- 19. The method of claim 14, further comprising the steps of:
controlling said magnetic mirror plasma using a magnetic mirror field and an orthogonally rotating electric field; wherein the magnetic mirror plasma chamber is constructed of essentially non-ferrous materials; wherein the plasma ions are created remote to the plasma chamber.
- 20. The system of claim 14 wherein said plasma chamber is constructed of essentially non-ferrous materials.
RELATED APPLICATIONS
[0001] This application is a continuation-in-part of U.S. patent application, Ser. No. 10/133,296, filed Apr. 26, 2002, which claims priority of U.S. patent Application Serial No. 60/336,786, filed Oct. 26, 2001, entitled: “Wafer Thinning Process”, and is incorporated by reference in its entirety herein
Provisional Applications (1)
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Number |
Date |
Country |
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60336786 |
Oct 2001 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
10133296 |
Apr 2002 |
US |
Child |
10390977 |
Mar 2003 |
US |