The present invention relates to the field of photolithography tools, and in particular, to an apparatus and a method for adsorbing a warped wafer.
Photolithography tools are primarily used in the fabrication of integrated circuits (ICs) or other micro devices. With a photolithography tool, distinct patterns formed in multiple accurately aligned masks are successively imaged by exposure on a photoresist-coated wafer such as, for example, a semiconductor wafer or a wafer for forming a light emitting diode (LED) display.
Existing photolithography tools include step-and-repeat ones and step-and-scan ones, each of which needs to incorporate suitable devices for respectively carrying the mask and wafer to make accurate relative movements, in order to meet the requirements of photolithography. In these devices, the component carrying the mask is called a mask table, whilst the component carrying the wafer is called a wafer table. The mask table and the wafer table function as core components in respective mask stage subsystem and workpiece stage subsystem of the photolithography tool. Throughout the relative movements of the mask and wafer tables, both of the mask and wafer must be reliably fixed, i.e., constrained in all their six degrees of freedom, with respect to the respective tables.
Existing wafer tables utilize a so-called chuck to adsorb and hold a wafer. The chuck is adsorbed and thereby retained on a top surface of a square mirror, a core component of the wafer table, such that the wafer can move with the wafer table to a desired location along a predetermined path at a given speed. Since the surface of the wafer is coated with photoresist, most chucks are based on a suction approach. In order to enable position adjustments of the wafer table and to meet the requirements for leveling and focusing of the wafer, the square mirror is driven by a series of drives so as to be able to move in multiple degrees of freedom. Focal depth and overlay accuracy of the photolithography tool depend greatly on the accuracy of the chuck, which is measured by the profile accuracy of the upper and lower chuck surfaces and deformation upon the chuck being held.
The development of through silicon via (TSV), wafer thinning and wafer bonding technologies has in turn led to the presence of random wafer warps which can form gaps between warped wafer and chuck surface and thus disable the chuck to achieve a vacuum reaching a threshold for a satisfactory absorption effect. On the other hand, lowering the vacuum threshold may cause a decrease in retention robustness. All of these make an existing vacuum chuck unable to hold a warped wafer in a satisfying way.
Most of the existing wafer tables employ such vacuum chucks which fixedly retain a wafer by means of a vacuum suction force, i.e., retaining the wafer on the chuck top surface in a vacuum suction manner. While there have been proposed several chucks with special top surface profiles for minimizing the impacts, for example, deformation and thermal stress, occurring during the vacuum suction, none of them can address the issues associated with the suction retention of a warped wafer.
It is therefore an objective of the present invention to address the issue of unsatisfactory retention of a warped wafer arising from the use of the conventional chucks by presenting an apparatus and method for retaining a warped wafer by suction.
In pursuit of this objective, the present invention provides an apparatus for adsorbing a wafer, which includes a chuck for vacuum adsorption of the wafer and at least three suction head assemblies, the chuck defining at least three openings each corresponding to one of the at least three suction head assemblies, wherein each of the at least three suction head assemblies includes: a pneumatic cylinder in fixed connection with the chuck; and a nozzle in movable connection to the pneumatic cylinder and movable under an actuation of the pneumatic cylinder between: a first position at which the nozzle is completely located within a corresponding one of the at least three openings; and a second position at which the nozzle is at least partially located above an upper surface of the chuck.
Preferably, the pneumatic cylinder includes a cylinder body, a piston and a guide column, the cylinder body is disposed under a corresponding one of the at least three openings and fixed to a bottom of the chuck, the guide column is disposed within the cylinder body and has a first end fixed to a bottom of the cylinder body and a second end inserted in the piston, and the piston has a lower portion located within the cylinder body and an upper portion in movable connection with the nozzle.
Preferably, the piston has an upper portion in movable connection with the nozzle by a ball head.
Preferably, the pneumatic cylinder further includes a spring disposed over a portion of the guide column between a bottom of the piston and the bottom of the cylinder body.
Preferably, the piston divides the pneumatic cylinder into a hermetic first pneumatic chamber and a hermetic second pneumatic chamber, the first pneumatic chamber is connected to a positive pressure source and the second pneumatic chamber is connected to a negative pressure source.
Preferably, the guide column defines a through bore and the nozzle defines a lumen connected to the second pneumatic chamber via the through bore of the guide column.
Preferably, the cylinder body is fixed to the bottom of the chuck by a screw.
Preferably, each of the at least three suction head assemblies further includes a position sensor arranged in the pneumatic cylinder, the position sensor is configured to initiate the vacuum adsorption of the chuck upon detecting that an upper surface of the nozzle is flush with an upper surface of the chuck.
Preferably, a vacuum sensor is arranged on the upper surface of the chuck, the vacuum sensor is configured to detect whether the wafer is adsorbed on the chuck.
Preferably, the at least three suction head assemblies are distributed on a circle centered at a center of the chuck.
Preferably, each of the at least three suction head assemblies is spaced from the center of the chuck by a distance having a ratio to a diameter of the chuck of 1:3 to 2:5.
Preferably, each nozzle has a diameter ranging from 5 mm to 100 mm.
The present invention also provides a method for adsorbing a wafer by using the apparatus as defined above and includes the steps of:
Compared to the conventional apparatuses, the above described apparatuses according to the present invention each additionally include at least three suction head assemblies disposed in the chuck. The assemblies could, in the event of a warped wafer failing to be adsorbed on the chuck by suction, utilize their nozzles and pneumatic cylinders to bond to and thereby stretch the warped wafer until a bottom surface of the wafer adheres to a top surface of the chuck, thus achieving the adsorption of the warped wafer.
In these figures, 100—chuck, 101—opening, 200—suction head assembly, 210—nozzle, 220—ball head, 230—pneumatic cylinder, 231—cylinder body, 232—piston, 233—guide column, 234—spring, 235—first pneumatic chamber, 236—second pneumatic chamber, 237—screw, 240—position sensor, 300—warped wafer, and 401—vacuum sensor.
The forgoing objectives, features and advantages of the present invention will become apparent from the following detailed description of illustrative embodiments thereof, which is to be read in connection with the accompanying drawings. Note that the accompanying drawings are provided in a very simplified form not necessarily presented to scale, with the only intention of facilitating convenience and clarity in explanation.
With reference to
Preferably, with emphasized reference to
Preferably, with continuing reference to
Preferably, a vacuum sensor 401 (
With reference to
In a first step, each pneumatic cylinder 230 drives the respective nozzle 210 to move downward beneath the upper surface of the chuck 100 (at a position shown in
In a second step, the vacuum sensor 401 detects whether the wafer is absorbed on the chuck 100. If the wafer is detected as having been absorbed on the chuck, the adsorption is accomplished. Otherwise, the process proceeds to the next step.
In a third step, the positive pressure source that is connected with the first pneumatic chamber 235 is turned on, causing the nozzle 210 to move upward. Specifically, the nozzle 210 may rise to a level that is determined by the warpage of commonly used wafers. In this embodiment, the nozzle 210 rises to a position 0.2 mm to 5 mm higher than the upper surface of the chuck 100. After the pneumatic cylinder 230 drives the nozzle 210 to rise to reach the warped wafer 300, the nozzle 210 comes into contact with the warped wafer 300, and the nozzle 210 pivots about the ball head 220 under the action of the weight of the warped wafer 300 to an orientation compatible with the warpage of the warped wafer 300. In this state (
In a fourth step, upon detecting that an upper surface of the nozzle 210 is flush with the upper surface of the chuck 100, the position sensor 240 emits a signal to initiate vacuum adsorption of the chuck 100, thereby causing the chuck 100 to adsorb on the warped wafer 300.
In a fifth step, upon detecting that the warped wafer 300 has been successfully adsorbed on the chuck 100, the vacuum sensor 401 outputs a signal to the suction head assemblies 200 to cause their nozzles 210 to stop the vacuum suction. The pneumatic cylinders 230 then drive the respective nozzles 210 to return to their initial positions. Specifically, the negative pressure sources that are connected with the respective second pneumatic chambers 236 are turned off, thereby releasing the nozzles 210 from the warped wafer 300. Next, the positive pressure sources that are connected with the respective first pneumatic chambers 235 are turned on to cause the respective nozzles 210 to move to positions beneath the upper surface of the chuck 100.
Preferably, the nozzles 210 move upward or downward under the control of the pneumatic cylinders 230 enabled by opening or closing the respective first pneumatic chambers 235 and second pneumatic chambers 236, during which the spring 234 acts as a buffer for protecting the wafer.
In summary, the apparatuses according to the present invention each additionally include in the chuck 100 at least three suction head assemblies 200, when a warped wafer 300 fails to be adsorbed on the chuck 100, the suction head assemblies 200 can utilize their nozzles 210 and pneumatic cylinders 230 to adsorb and thereby stretch the warped wafer 300 until a bottom surface of the warped wafer 300 adheres to a top surface of the chuck 100, thus achieving the adsorption of the warped wafer 300.
It is apparent that those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, it is intended that all such changes and modifications fall within the scope of the invention as defined by the appended claims and their equivalents.
Number | Date | Country | Kind |
---|---|---|---|
201210586817.2 | Dec 2012 | CN | national |
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/CN2013/090565 | 12/26/2013 | WO | 00 |