The present invention relates to a wire bonding method and a wire bonding apparatus.
This semiconductor product includes a first electrode 101 having a first bonding surface 101a and a second electrode 102 having a second bonding surface 102a, and the first bonding surface 101a and the second bonding surface 102a are electrically connected to each other by bonding wires 103 and 104 and wiring 105.
First, a workpiece is set to a bonding stage of a wire bonding apparatus (not shown) (S1 in
Next, the bonding wire 103 is connected to the first bonding surface 101a of the first electrode 101 and the wiring 105 such that the first electrode 101 and the wiring 105 are electrically connected to each other by the bonding wire 103 (S2 in
Next, the bonding stage is rotated by 90° by a rotation mechanism such that the wire bonding apparatus becomes ready to bond the second bonding surface 102a (S3 in
Next, the bonding wire 104 is connected to the second bonding surface 102a of the second electrode 102 and the wiring 105 such that the second electrode 102 and the wiring 105 are electrically connected to each other by the bonding wire 104 (S4 in
Next, the workpiece is detached from the bonding stage. In this manner, the semiconductor product illustrated in
By the way, when two different surfaces such as the first bonding surface 101a and the second bonding surface 102a need to be electrically connected, a method for bonding the first bonding surface 101a and the second bonding surface 102a directly by a single bonding wire is not used. Like the above-mentioned conventional wire bonding method, measures have been taken to perform bonding in the respective surfaces and add a wiring circuit for connecting the two different surfaces.
Patent Literature 1: Japanese Patent No. 6316340
In the conventional wire bonding method, two bonding wires need to be stretched, and hence the wire bonding step needs to be performed twice, and production tact time decreases. The addition of the wiring circuit increases production cost.
It is an object of one aspect of the present invention to provide a wire bonding method or a wire bonding apparatus capable of connecting a wire to two different surfaces by bonding with a single wire bonding step.
Various aspects of the present invention are described below.
[1] A wire bonding method for bonding one end of a wire to a first bonding surface and bonding another end of the wire to a second bonding surface, including:
[2] The wire bonding method according to item [1], in which the angle is 240° or more.
[3] The wire bonding method according to item [1] or [2], wherein the any timing is any one of a timing immediately after the step (b), a timing in a middle of the step (c), a timing immediately after the step (c), a timing in a middle of the step (d), and a timing immediately before the step (e).
[4] A wire bonding apparatus for bonding one end of a wire to a first bonding surface and bonding another end of the wire to a second bonding surface, comprising:
the control unit controls the following operations (a) to (g):
One aspect of the present invention can provide the wire bonding method or the wire bonding apparatus capable of connecting a wire to two different surfaces by bonding with a single wire bonding step.
Embodiments of the present invention are described in detail below with reference to the drawings. However, the present invention is not limited to the following description, and it should be easily understood by a person skilled in the art that modes and details of the present invention can be variously modified without departing from the gist and scope of the present invention. Thus, the present invention is not intended to be interpreted as being limited to the description of the embodiments below.
The semiconductor product illustrated in
The first bonding surface 11a and the second bonding surface 12a are located on different planes. An angle 14 formed by the first bonding surface 11a and the second bonding surface 12a on the side where the bonding wire 13 is stretched is 270° (see
Note that, in the present embodiment, the angle 14 formed by the first bonding surface 11a and the second bonding surface 12a is 270°, but the angle only needs to be 200° or more, preferably 220° or more, more preferably 240° or more, still more preferably 255° or more.
First, the workpiece 10 is set to a bonding stage (not shown) (S11 in
Next, as illustrated in
Next, the capillary 22 is moved (raised) in a Z direction while feeding the wire 21 from the capillary 22. After that, the capillary 22 is moved in a direction including at least one of an X direction and a Y direction while feeding the wire 21, and the bonding stage is rotated by 90° about a rotation center 23 as indicated by an arrow 24 (see
The bonding stage is rotated by 90° at the above-mentioned timing, and hence in the middle of loop control of the wire 21, the bonding stage can be rotated before the capillary 22 contacts the product 10, and a free space 25 without any obstacle can be formed (see
Next, the capillary 22 is moved to the highest position (not shown).
Note that, in the above description, the capillary 22 is moved (raised) in the Z direction, and then the capillary 22 is moved in a direction including at least one of the X direction and the Y direction, and the bonding stage is rotated by 90°. However, the timing to rotate the bonding stage only needs to be after the capillary 22 is moved (raised) in the Z direction, and may be a timing before the capillary 22 is moved in a direction including at least one of the X direction and the Y direction, the same timing to move the capillary 22 in a direction including at least one of the X direction and the Y direction, a timing while the capillary 22 is moved in a direction including at least one of the X direction, the Y direction, and the Z direction a plurality of times, or a timing immediately after the capillary 22 is moved in a direction including at least one of the X direction, the Y direction, and the Z direction a plurality of times.
Next, the capillary 22 is moved to the second bonding surface 12a of the second electrode 12, and the other end of the wire 21 is bonded to the second bonding surface 12a (not shown). In this manner, the semiconductor product illustrated in
Note that the rotation axis around which the bonding stage is rotated by 90° in the step illustrated in
The above-mentioned wire bonding method can achieve the bonding wire 13 having a less bulging loop shape. The reasons are as follows.
After one end of the bonding wire 13 is bonded to the first bonding surface 11a, the motion of the capillary is limited in order to move (raise) the capillary in the Z direction while feeding the wire from the capillary and prevent the capillary from contacting the workpiece of the semiconductor product in
In the above-mentioned wire bonding method, on the other hand, one end of the wire 21 is bonded to the first bonding surface 11a of the first electrode 11, and then the bonding stage is rotated by 90° after the capillary 22 is moved (raised) in the Z direction, while the capillary 22 is moved in a direction including at least one of the X direction and the Y direction, while the capillary 22 is moved in a direction including at least one of the X direction, the Y direction, and the Z direction a plurality of times, or before the capillary 22 is moved to the highest position. In this manner, the capillary 22 can be prevented from contacting a workpiece without excessively feeding the wire 21 from the capillary 22. As a result, the bonding wire 13 having a less bulging loop shape can be achieved.
When the loop shape of the bonding wire is bulging, the following problems occur.
The use amount of the wire increases to increase product cost. The size reduction performance, the stability, and electric properties of the product deteriorate, and the quality of the product decreases and the value of the product decreases.
In the above-mentioned wire bonding method, as compared with the wire bonding method illustrated in
Next, a wire bonding apparatus and the wire bonding method according to one aspect of the present invention are described in more detail.
As illustrated in
First, a workpiece 10 is placed on the bonding stage 34 illustrated in
Next, the capillary 22 through which a wire 21 is inserted is held by an ultrasonic horn 41, and the wire 21 is fed from the capillary 22. A high voltage is applied between a distal end of the wire 21 protruding from a distal end of the capillary 22 and a discharge electrode to cause spark discharge. A distal end portion of the wire 21 is melted by discharge energy thereof to create a ball. The ball is pushed onto the first bonding surface 11a, and ultrasonic waves are applied. In this manner, as illustrated in
Next, the capillary 22 is moved in the Z direction while feeding the wire 21 from the capillary 22 (S22 in
After that, the capillary 22 is moved in a direction including at least one of the X direction and the Y direction while feeding the wire 21 (S23 in
Next, the capillary 22 is moved in a direction including at least one of the X direction, the Y direction, and the Z direction a plurality of times while feeding the wire 21 (S24 in
At any timing between Step S22 and Step S25 illustrated in
Even at the rotation timing indicated by (4) in
Next, the capillary 22 is lowered toward a second bonding point, and the capillary 22 is moved to the second bonding surface 12a of the second electrode 12 (S26 in
Note that the operations at the steps indicated by Steps S21 to S27 and S231 illustrated in
According to the present embodiment, the capillary 22 can be prevented from contacting an obstacle during loop control, and hence the operation to avoid an obstacle is unnecessary, and excessive wire feeding can be suppressed. As a result, a low loop with small sag can be formed.
In the present embodiment, the bonding stage 34 is rotated at any timing between Step S22 and Step S25 illustrated in
When the rotational operation is performed at the timing (1) illustrated in
Note that, in the present embodiment, the case where the angle between by the first bonding surface and the second bonding surface is 270° has been described, but even when the angle is 200° or more (preferably 220° or more, more preferably 240° or more, still more preferably 255° or more), a desired loop shape can be formed.
As described above, the operation to control the capillary 22 to avoid an obstacle is unnecessary, and any complicated loop shape can be formed. Thus, the following effects are obtained.
Low loop of product
Downsizing of product
Stable product performance
Cost reduction of product
Reduction in consumption amount of gold wire
Reduction in circuit
Shortening of production time (increase in production tact)
Prevention of damage to apparatus and product
Shortening of product development time
Filing Document | Filing Date | Country | Kind |
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PCT/JP2019/023787 | 6/17/2019 | WO |
Publishing Document | Publishing Date | Country | Kind |
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WO2020/255180 | 12/24/2020 | WO | A |
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Number | Date | Country |
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4-196549 | Jul 1992 | JP |
6-29342 | Feb 1994 | JP |
6-53267 | Feb 1994 | JP |
7-186442 | Jul 1995 | JP |
6316340 | Apr 2018 | JP |
Entry |
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Number | Date | Country | |
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20210351155 A1 | Nov 2021 | US |