1. Technical Field
The present invention relates to a wiring board for mounting a semiconductor device.
2. Background
Conventionally, a wiring board formed by a build-up method is known as a wiring board for mounting a semiconductor element such as a semiconductor integrated circuit element.
As shown in
In each of build-up insulating layers 12, a plurality of via holes 16 are formed. On the surface of each build-up insulating layer 12 including via hole 16, build-up wiring layer 13 made of a copper plating layer is formed. The upper and lower build-up wiring layers 13 are connected to each other through via hole 16, and are electrically connected to through-hole 15. Part of the outermost layer of build-up wiring layers 13 on the upper surface side forms circular semiconductor element connection pads 17 to be electrically connected to electrodes T′ of semiconductor element S′. A large number of semiconductor element connection pads 17 are arranged in a grid pattern corresponding to electrodes T′ of semiconductor element S′ in semiconductor element connection pad forming area A′ being a guadrangular area corresponding to semiconductor element S′. Part of the outermost layer of build-up wiring layers 13 on the lower surface side forms circular external connection pads 18 to be electrically connected to the wiring conductor of the external electric circuit board. External connection pads 18 are arranged in a grid pattern.
Both surfaces of wiring board 20 include solder resist layers 19. Solder resist layers 19 are deposited so as to expose semiconductor element connection pads 17 and external connection pads 18. Solder bumps B′ are welded to semiconductor element connection pads 17 exposed from solder resist layers 19. Semiconductor element connection pads 17 and electrodes T′ of semiconductor element S′ are to be electrically connected via solder bumps B′. External connection pads 18 and the wiring conductor of the external electric circuit board (not shown) are to be electrically connected via the solder balls.
By the way, there are increasing cases where semiconductor elements S′ adopt the terminal arrangement which includes a large number of electrodes T′ for a grounding and for a power supply in the central portion of the lower surface, and a large number of electrodes T′ for a signal in the outer peripheral portion of the lower surface so as to ensure the sufficient power supply from wiring board 20 (for example, see Unexamined Japanese Patent Publication No. 2005-64028). When such a semiconductor element S′ is mounted, as shown in
Thus, through-holes 15G for a grounding and through-holes 15P for a power supply are disposed in the area corresponding to semiconductor element connection pad forming area A′ at a high array density, whereby semiconductor element connection pads 17 for a grounding and semiconductor element connection pads 17 for a power supply can be connected respectively with through-holes 15G for a grounding and through-holes 15P for a power supply at shorter distances. Furthermore, external connection pads 18 for a grounding and external connection pads 18 for a power supply have been performed to be disposed at least in the central portion of the lower surface of wiring board 20. This enables it to connect through-holes 15G for a grounding and through-holes 15P for a power supply respectively with external connection pads 18 for a grounding and external connection pads 18 for a power supply at shorter distances.
It is important to provide semiconductor element S′ with a sufficient grounding potential and power supply potential in a stable manner so as to activate semiconductor element S′ in a stable manner. For this purpose, it is necessary to reduce the loop inductance between from semiconductor element connection pads 17 for a grounding and for a power supply to external connection pads 18 for a grounding and for a power supply. Therefore, as shown in
It is effective to narrow the adjacent interval between the two so as to strengthen the electromagnetic coupling between mutually adjacent through-hole 15G for a grounding and through-hole 15P for a power supply. However, a too narrow adjacent interval between through-hole I5G for a grounding and through-hole 15P for a power supply results in a decrease in electrical insulation reliability between the two.
In the embodiment of the present invention, while the electrical insulation reliability between the through-hole for a grounding and the through-hole for a power supply are being kept, the electromagnetic coupling between the two can be strengthened and the loop inductance between the through-hole for a grounding and the through-hole for a power supply can be reduced. Therefore, it is possible to provide a wiring board capable of providing the semiconductor element with a sufficient grounding potential and power supply potential, and capable of operating the semiconductor element satisfactorily.
The wiring board according to the embodiment of the present invention includes a core substrate including a through-hole for a grounding and a through-hole for a power supply disposed adjacent to each other, and a build-up layer formed on one surface of the core substrate, including a build-up insulating layer having a via hole, and a build-up wiring layer formed on a surface of the build-up insulation layer and on an inner surface of the via hole, the build-up wiring layer electrically connected to the through-hole, and forming at least one semiconductor element connection pad on a surface of the build-up layer. The through-hole for a grounding and the through-hole for a power supply have a cross-sectional shape perpendicular to a thickness direction of the core substrate, being any one of a triangular shape, a quadrangular shape, and a hexagonal shape, containing a corner portion and a side portion connecting between the corner portions. The side portions of the through-hole for a grounding and the through-hole for a power supply being mutually adjacent are disposed so as to face each other.
According to the wiring board according to the embodiment of the present invention, the through-hole for a grounding and the through-hole for a power supply have a cross-sectional shape perpendicular to a thickness direction of the core substrate, being any one of a triangular shape, a quadrangular shape, and a hexagonal shape, containing a corner portion and a side portion connecting between the corner portions, and the side portions of the through-hole for a grounding and the through-hole for a power supply being mutually adjacent are disposed so as to face each other, and therefore, the interval between the facing side portions (adjacent interval) is nearly constant at any part. Therefore, while the electrical insulation reliability between the through-hole for a grounding and the through-hole for a power supply are being kept, the electromagnetic coupling between the two can be strengthened, and the loop inductance between the through-hole for a grounding and the through-hole for a power supply can be reduced. Therefore, it is possible to provide a wiring board capable of providing the semiconductor element with a sufficient power supply, and capable of operating the semiconductor element satisfactorily.
In the following, the wiring board according to the embodiment of the present invention will be described in detail with reference to
Core substrate 1 has a thickness of about 50 to 800 μm. Core substrate 1 is, for example, formed by an insulating board made of electrically insulating material where the glass cloth in which a glass fiber bundle is woven in the vertical and horizontal directions is impregnated with a thermosetting resin such as a bismaleimide triazine resin and an epoxy resin. On the upper and lower surfaces of core substrate 1, core conductor layers 4 made of copper foil or copper plating layers are deposited. In core substrate 1, a large number of through-holes 5 penetrating from the upper surface to the lower surface are formed. On the inner wall surface of through-hole 5, a copper plating layer functioning as part of core conductor layer 4 is deposited. Resin is filled inside through-hole 5.
Build-up insulating layer 2 has a thickness of about 20 to 50 μm, and includes an electrically insulating material where an inorganic insulating filler such as a silicon oxide is dispersed in a thermosetting resin such as an epoxy resin. In build-up insulating layer 2, a plurality of via holes 6 each of which has a diameter of about 30 to 100 μm are formed. Via hole 6 is, for example, formed by laser processing.
Build-up wiring layer 3 is formed on the surface of build-up insulating layer 2 and on the inner surface of via hole 6. Build-up wiring layer 3 is, for example, made of copper plating, and is electrically connected to through-hole 5. Furthermore, part of the outermost layer of build-up wiring layers 3 on the upper surface side of wiring board 10 forms circular semiconductor element connection pad 7. A plurality of semiconductor element connection pads 7 are arranged in a grid pattern. Semiconductor element connection pad 7 is to be electrically connected with electrode T of semiconductor element S via solder bump B.
On the other hand, part of the outermost layer of build-up wiring layers 3 on the lower surface side of wiring board 10 forms circular external connection pad 3. A plurality of external connection pads 8 are arranged in a grid pattern. External connection pad 8 is to be electrically connected with a wiring conductor of the external electric circuit board (not shown) via a solder ball.
Both surfaces of wiring board 10 include solder resist layers 9. Solder resist layers 9 are deposited so as to expose semiconductor element connection pad 7 and external connection pad 8. Furthermore, solder resist layers 9 protect the outermost layers of build-up wiring layers 3, and define the exposed portions of semiconductor element connection pads 7 and external connection pads 8.
In semiconductor element S, the terminal arrangement where a large number of electrodes T for a grounding and for a power supply are disposed in the central portion of the lower surface, and a large number of electrodes T for a signal are disposed in the outer periphery portion of the lower surface is adopted so as to secure a sufficient power supply from wiring board 10. Therefore, in wiring board 10 to mount semiconductor element S, through-holes 5G for a grounding and through-holes 5P for a power supply are disposed in the area corresponding to semiconductor element connection pad forming area A at a high array density. On the other hand, through-holes 5S for a signal are disposed in the outer periphery portion of core substrate 1 at a low array density. Through-holes 5G, 5P, and 5S are, for example, formed by blast processing.
Thus, through-holes 5G for a grounding and through-holes 5P for a power supply are disposed, whereby semiconductor element connection pads 7 for a grounding and semiconductor element connection pads 7 for a power supply can be connected respectively with through-holes 5G for a grounding and through-holes 5P for a power supply at shorter distances. Furthermore, external connection pads 8 for a grounding and external connection pads 8 for a power supply are disposed in the central portion of the lower surface of wiring board 10. This enables it to connect through-holes 5G for a grounding and through-holes 5P for a power supply respectively with external connection pads 8 for a grounding and external connection pads 8 for a power supply at shorter distances.
Here, the shapes and arrangement of through-holes 5G, 5P, and 5S in wiring board 10 according to the embodiment of the present invention are shown in
As shown in
Therefore, while keeping the electrical insulation reliability between through-hole 5G for a grounding and through-hole 5P for a power supply, it is possible to strengthen the electromagnetic coupling between the two. Whereby, the loop inductance between through-hole 5G for a grounding and through-hole 5P for a power supply can be reduced, and semiconductor element S can be provided with a sufficient power supply. As a result, wiring board 10 capable of operating semiconductor element S satisfactorily can be provided.
If through-hole 5G′ for a grounding and through-hole 5P′ for a power supply have circular shapes as shown in
On the other hand, in
In
The wiring board according to the embodiment of the present invention is not intended to be limited to the embodiment described above, and various modifications are possible within the scope of the claims. For example, in wiring board 10 described above, through-hole 5G for a grounding and through-hole 5P for a power supply have rounded shapes at corner portions. However, the corner portions don't have to have rounded shapes. Although through-hole 5G for a grounding and through-hole 5P for a power supply have a square shape, the through-hole for a grounding and the through-hole for a power supply may have a quadrangular shape, a trapezoidal shape, or a parallelogram shape, and as shown in
In addition, in wiring board 10 described above, build-up layers are formed on both sides of core substrate 1. That is, five layers of build-up insulating layers 2 and build-up wiring layers 3 are respectively laminated alternately. However, the build-up layer may be formed only on one side of core substrate 1. When the build-up layers are formed on both sides of core substrate 1, the number of laminated layers may be different in the upper and lower surfaces.
Number | Date | Country | Kind |
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2014-087874 | Apr 2014 | JP | national |