LONGITUDE FLASH MEMORY SOLUTIONS LTD

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Patents Grantslast 30 patents

Information Patent Grant
Method of ono integration into logic CMOS flow
- Patent number 12,048,162
- Issue date Jul 23, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low standby power with fast turn on method for non-volatile memory...
- Patent number 12,014,800
- Issue date Jun 18, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Cristinel Zonte
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 12,009,401
- Issue date Jun 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,950,412
- Issue date Apr 2, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,784,243
- Issue date Oct 10, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 11,721,733
- Issue date Aug 8, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Embedded sonos with a high-K metal gate and manufacturing methods o...
- Patent number 11,641,745
- Issue date May 2, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ono integration into logic CMOS flow
- Patent number 11,569,254
- Issue date Jan 31, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 11,456,365
- Issue date Sep 27, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Asymmetric pass field-effect transistor for nonvolatile memory
- Patent number 11,361,826
- Issue date Jun 14, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Sonos stack with split nitride memory layer
- Patent number 11,257,912
- Issue date Feb 22, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,251,189
- Issue date Feb 15, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,222,965
- Issue date Jan 11, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Flash memory device and method
- Patent number 11,056,565
- Issue date Jul 6, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low standby power with fast turn on method for non-volatile memory...
- Patent number 10,998,019
- Issue date May 4, 2021
- Longitude Flash Memory Solutions, Ltd.
- Cristinel Zonte
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 10,903,325
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,342
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,068
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,896,973
- Issue date Jan 19, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of integrating a charge-trapping gate stack into a CMOS flow
- Patent number 10,854,625
- Issue date Dec 1, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS stack with split nitride memory layer
- Patent number 10,790,364
- Issue date Sep 29, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded sonos with triple gate oxide and manufacturing method of t...
- Patent number 10,784,356
- Issue date Sep 22, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a memory transistor into High-k, metal gate CMOS pro...
- Patent number 10,784,277
- Issue date Sep 22, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric pass field-effect transistor for non-volatile memory
- Patent number 10,706,937
- Issue date Jul 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of ONO integration into logic CMOS flow
- Patent number 10,700,083
- Issue date Jun 30, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS ONO stack scaling
- Patent number 10,699,901
- Issue date Jun 30, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Frederick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile charge trap memory device having a high dielectric cons...
- Patent number 10,615,289
- Issue date Apr 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Radical oxidation process for fabricating a nonvolatile charge trap...
- Patent number 10,593,812
- Issue date Mar 17, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low standby power with fast turn on method for non-volatile memory...
- Patent number 10,510,387
- Issue date Dec 17, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Cristinel Zonte
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 10,446,656
- Issue date Oct 15, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY

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Patents Applicationslast 30 patents

Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20240234550
- Publication date Jul 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW
- Publication number 20230209830
- Publication date Jun 29, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
LOW STANDBY POWER WITH FAST TURN ON METHOD FOR NON-VOLATILE MEMORY...
- Publication number 20230197128
- Publication date Jun 22, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Cristinel Zonte
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20230074163
- Publication date Mar 9, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20230017648
- Publication date Jan 19, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20220173116
- Publication date Jun 2, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20220093773
- Publication date Mar 24, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
LOW STANDBY POWER WITH FAST TURN ON METHOD FOR NON-VOLATILE MEMORY...
- Publication number 20210327477
- Publication date Oct 21, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Cristinel Zonte
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW
- Publication number 20210188629
- Publication date Jun 24, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20210104402
- Publication date Apr 8, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SONOS WITH TRIPLE GATE OXIDE AND MANUFACTURING METHOD OF T...
- Publication number 20210074821
- Publication date Mar 11, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...
- Publication number 20200303563
- Publication date Sep 24, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...
- Publication number 20200287056
- Publication date Sep 10, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
LOW STANDBY POWER WITH FAST TURN ON METHOD FOR NON-VOLATILE MEMORY...
- Publication number 20200234746
- Publication date Jul 23, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Cristinel Zonte
- G11 - INFORMATION STORAGE
Information Patent Application
OXIDE FORMATION IN A PLASMA PROCESS
- Publication number 20200161324
- Publication date May 21, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Jeong Soo Byun
- B82 - NANO-TECHNOLOGY
Information Patent Application
RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...
- Publication number 20200161478
- Publication date May 21, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswarmy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20200144399
- Publication date May 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of ONO Stack Formation
- Publication number 20200111805
- Publication date Apr 9, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE ARCHITECTURE FOR NON-VOLATILE MEMORY
- Publication number 20200066352
- Publication date Feb 27, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Bogdan I. Georgescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...
- Publication number 20200051642
- Publication date Feb 13, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Gary Menezes
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY
- Publication number 20200020402
- Publication date Jan 16, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20200013863
- Publication date Jan 9, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
EMBEDDED SONOS WITH A HIGH-K METAL GATE AND MANUFACTURING METHODS O...
- Publication number 20190371806
- Publication date Dec 5, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING DRAIN EXTENDED MOS TRANSISTORS FOR HIGH VOLTAGE C...
- Publication number 20190355583
- Publication date Nov 21, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20190319035
- Publication date Oct 17, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS

LONGITUDE FLASH MEMORY SOLUTIONS LTD

Organization

Patents Grantslast 30 patents

Method of ono integration into logic CMOS flow

Low standby power with fast turn on method for non-volatile memory...

Memory transistor with multiple charge storing layers and a high wo...

Gate fringing effect based channel formation for semiconductor device

Oxide-nitride-oxide stack having multiple oxynitride layers

Memory transistor with multiple charge storing layers and a high wo...

Embedded sonos with a high-K metal gate and manufacturing methods o...

Method of ono integration into logic CMOS flow

Memory transistor with multiple charge storing layers and a high wo...

Asymmetric pass field-effect transistor for nonvolatile memory

Sonos stack with split nitride memory layer

Gate fringing effect based channel formation for semiconductor device

Oxide-nitride-oxide stack having multiple oxynitride layers

Flash memory device and method

Low standby power with fast turn on method for non-volatile memory...

Memory transistor with multiple charge storing layers and a high wo...

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Method of integrating a charge-trapping gate stack into a CMOS flow

SONOS stack with split nitride memory layer

Embedded sonos with triple gate oxide and manufacturing method of t...

Integration of a memory transistor into High-k, metal gate CMOS pro...

Asymmetric pass field-effect transistor for non-volatile memory

Method of ONO integration into logic CMOS flow

SONOS ONO stack scaling

Nonvolatile charge trap memory device having a high dielectric cons...

Radical oxidation process for fabricating a nonvolatile charge trap...

Low standby power with fast turn on method for non-volatile memory...

Memory transistor with multiple charge storing layers and a high wo...

Patents Applicationslast 30 patents

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW

LOW STANDBY POWER WITH FAST TURN ON METHOD FOR NON-VOLATILE MEMORY...

SONOS ONO STACK SCALING

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

LOW STANDBY POWER WITH FAST TURN ON METHOD FOR NON-VOLATILE MEMORY...

METHOD OF ONO INTEGRATION INTO LOGIC CMOS FLOW

SONOS ONO STACK SCALING

EMBEDDED SONOS WITH TRIPLE GATE OXIDE AND MANUFACTURING METHOD OF T...

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...

RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...

LOW STANDBY POWER WITH FAST TURN ON METHOD FOR NON-VOLATILE MEMORY...

OXIDE FORMATION IN A PLASMA PROCESS

RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

Method of ONO Stack Formation

HIGH VOLTAGE ARCHITECTURE FOR NON-VOLATILE MEMORY

BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

EMBEDDED SONOS WITH A HIGH-K METAL GATE AND MANUFACTURING METHODS O...

METHOD OF FORMING DRAIN EXTENDED MOS TRANSISTORS FOR HIGH VOLTAGE C...

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE