Amitay Levi

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three dimensional perpendicular magnetic tunnel junction with thin...
- Patent number 12,069,964
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact and efficient CMOS inverter
- Patent number 11,688,649
- Issue date Jun 27, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with selective epitaxial cell transistor
- Patent number 11,626,407
- Issue date Apr 11, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector transistor with continuously variable current drive
- Patent number 11,545,524
- Issue date Jan 3, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector transistor with metal replacement gate wordline
- Patent number 11,444,123
- Issue date Sep 13, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional perpendicular magnetic tunnel junction with thin...
- Patent number 11,417,829
- Issue date Aug 16, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
High density 3D magnetic random access memory (MRAM) cell integrati...
- Patent number 11,342,498
- Issue date May 24, 2022
- Integrated Silicon Solution (Cayman) Inc.
- Marcin Gajek
- G11 - INFORMATION STORAGE
Information Patent Grant
DRAM with selective epitaxial transistor and buried bitline
- Patent number 11,329,048
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact and efficient CMOS inverter
- Patent number 11,302,586
- Issue date Apr 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with selective epitaxial cell transistor
- Patent number 11,302,697
- Issue date Apr 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction memory cells having vertical...
- Patent number 11,222,970
- Issue date Jan 11, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of epitaxially grown channel selector with two terminal...
- Patent number 10,957,370
- Issue date Mar 23, 2021
- Spin Memory, Inc.
- Dafna Beery
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration of epitaxially grown channel selector with MRAM device
- Patent number 10,937,479
- Issue date Mar 2, 2021
- Spin Memory, Inc.
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically-strained silicon device for use with a perpendicular mag...
- Patent number 10,916,582
- Issue date Feb 9, 2021
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjustable current selectors
- Patent number 10,854,260
- Issue date Dec 1, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Flexible substrate for use with a perpendicular magnetic tunnel jun...
- Patent number 10,790,333
- Issue date Sep 29, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating dual threshold voltage devices
- Patent number 10,770,561
- Issue date Sep 8, 2020
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual threshold voltage devices having a first transistor and a seco...
- Patent number 10,770,510
- Issue date Sep 8, 2020
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared bit line array architecture for magnetoresistive memory
- Patent number 10,679,685
- Issue date Jun 9, 2020
- Spin Memory, Inc.
- Loc Hoang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming perpendicular magnetic tunnel junction memory ce...
- Patent number 10,658,425
- Issue date May 19, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a three dimensional perpendicular magnetic tunnel...
- Patent number 10,629,649
- Issue date Apr 21, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning of high density small feature size pillar structures
- Patent number 10,614,867
- Issue date Apr 7, 2020
- Spin Memory, Inc.
- Gian Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual gate memory devices
- Patent number 10,497,415
- Issue date Dec 3, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming perpendicular magnetic tunnel junction memory ce...
- Patent number 10,468,293
- Issue date Nov 5, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction memory cells having shared s...
- Patent number 10,460,778
- Issue date Oct 29, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Annular vertical Si etched channel MOS devices
- Patent number 10,438,999
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating magnetic tunnel junctions integrated with se...
- Patent number 10,438,996
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual channel/gate vertical field-effect transistor (FET) for use wi...
- Patent number 10,431,628
- Issue date Oct 1, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional perpendicular magnetic junction with thin-film tr...
- Patent number 10,355,045
- Issue date Jul 16, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep slope field-effect transistor (FET) for a perpendicular magne...
- Patent number 10,355,046
- Issue date Jul 16, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...
- Publication number 20220344580
- Publication date Oct 27, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT AND EFFICIENT CMOS INVERTER
- Publication number 20220189829
- Publication date Jun 16, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR
- Publication number 20220189961
- Publication date Jun 16, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR TRANSISTOR WITH METAL REPLACEMENT GATE WORDLINE
- Publication number 20210391386
- Publication date Dec 16, 2021
- SPIN (assignment for benefit of creditors), LLC
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT AND EFFICIENT CMOS INVERTER
- Publication number 20210305105
- Publication date Sep 30, 2021
- Spin Memory, Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM WITH SELECTIVE EPITAXIAL TRANSISTOR AND BURIED BITLINE
- Publication number 20210305256
- Publication date Sep 30, 2021
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR
- Publication number 20210233913
- Publication date Jul 29, 2021
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR TRANSISTOR WITH CONTINUOUSLY VARIABLE CURRENT DRIVE
- Publication number 20210217814
- Publication date Jul 15, 2021
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH TWO TERMINAL...
- Publication number 20210090626
- Publication date Mar 25, 2021
- Spin Memory, Inc.
- Dafna Beery
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH MRAM DEVICE
- Publication number 20210065760
- Publication date Mar 4, 2021
- Spin Memory, Inc.
- Dafna Beery
- G11 - INFORMATION STORAGE
Information Patent Application
Fabricating Devices with Reduced Isolation Regions
- Publication number 20200409273
- Publication date Dec 31, 2020
- Spin Memory, Inc.
- Amitay Levi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Fabricating Sub-Lithographic Devices
- Publication number 20200409272
- Publication date Dec 31, 2020
- Spin Memory, Inc.
- Gian Sharma
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
MEMORY CELL USING SELECTIVE EPITAXIAL VERTICAL CHANNEL MOS SELECTOR...
- Publication number 20200127052
- Publication date Apr 23, 2020
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING OF HIGH DENSITY SMALL FEATURE SIZE PILLAR STRUCTURES
- Publication number 20200043537
- Publication date Feb 6, 2020
- Spin Memory, Inc.
- Gian Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...
- Publication number 20190355896
- Publication date Nov 21, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Dual Threshold Voltage Devices
- Publication number 20190311956
- Publication date Oct 10, 2019
- SPIN MEMORY, INC.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjustable Current Selectors
- Publication number 20190287596
- Publication date Sep 19, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL/GATE VERTICAL FIELD-EFFECT TRANSISTOR (FET) FOR USE WI...
- Publication number 20190214432
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Memory Devices
- Publication number 20190214069
- Publication date Jul 11, 2019
- Spin Transfer Technologies
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY 3D MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL INTEGRATI...
- Publication number 20190214552
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Marcin Gajek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SE...
- Publication number 20190214430
- Publication date Jul 11, 2019
- Spin Transfer Technologies, Inc.
- Kuk-Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Threshold Voltage Devices
- Publication number 20190214431
- Publication date Jul 11, 2019
- Spin Transfer Technologies
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) USIN...
- Publication number 20190214551
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED S...
- Publication number 20190206463
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CE...
- Publication number 20190206716
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TR...
- Publication number 20190206934
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES
- Publication number 20190206938
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY-STRAINED SILICON DEVICE FOR USE WITH A PERPENDICULAR MAG...
- Publication number 20190206940
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES
- Publication number 20190206461
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Gian Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL...
- Publication number 20190207024
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS

Amitay Levi

Person

Patents Grantslast 30 patents

Three dimensional perpendicular magnetic tunnel junction with thin...

Compact and efficient CMOS inverter

DRAM with selective epitaxial cell transistor

Selector transistor with continuously variable current drive

Selector transistor with metal replacement gate wordline

Three dimensional perpendicular magnetic tunnel junction with thin...

High density 3D magnetic random access memory (MRAM) cell integrati...

DRAM with selective epitaxial transistor and buried bitline

Compact and efficient CMOS inverter

DRAM with selective epitaxial cell transistor

Perpendicular magnetic tunnel junction memory cells having vertical...

Integration of epitaxially grown channel selector with two terminal...

Integration of epitaxially grown channel selector with MRAM device

Vertically-strained silicon device for use with a perpendicular mag...

Adjustable current selectors

Flexible substrate for use with a perpendicular magnetic tunnel jun...

Methods of fabricating dual threshold voltage devices

Dual threshold voltage devices having a first transistor and a seco...

Shared bit line array architecture for magnetoresistive memory

Methods of forming perpendicular magnetic tunnel junction memory ce...

Method of making a three dimensional perpendicular magnetic tunnel...

Patterning of high density small feature size pillar structures

Dual gate memory devices

Methods of forming perpendicular magnetic tunnel junction memory ce...

Perpendicular magnetic tunnel junction memory cells having shared s...

Annular vertical Si etched channel MOS devices

Methods of fabricating magnetic tunnel junctions integrated with se...

Dual channel/gate vertical field-effect transistor (FET) for use wi...

Three dimensional perpendicular magnetic junction with thin-film tr...

Steep slope field-effect transistor (FET) for a perpendicular magne...

Patents Applicationslast 30 patents

THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...

COMPACT AND EFFICIENT CMOS INVERTER

DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR

SELECTOR TRANSISTOR WITH METAL REPLACEMENT GATE WORDLINE

COMPACT AND EFFICIENT CMOS INVERTER

DRAM WITH SELECTIVE EPITAXIAL TRANSISTOR AND BURIED BITLINE

DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR

SELECTOR TRANSISTOR WITH CONTINUOUSLY VARIABLE CURRENT DRIVE

INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH TWO TERMINAL...

INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH MRAM DEVICE

Fabricating Devices with Reduced Isolation Regions

Fabricating Sub-Lithographic Devices

MEMORY CELL USING SELECTIVE EPITAXIAL VERTICAL CHANNEL MOS SELECTOR...

PATTERNING OF HIGH DENSITY SMALL FEATURE SIZE PILLAR STRUCTURES

THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...

Methods of Fabricating Dual Threshold Voltage Devices

Adjustable Current Selectors

DUAL CHANNEL/GATE VERTICAL FIELD-EFFECT TRANSISTOR (FET) FOR USE WI...

Dual Gate Memory Devices

HIGH DENSITY 3D MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL INTEGRATI...

METHODS OF FABRICATING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SE...

Dual Threshold Voltage Devices

FABRICATION OF A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) USIN...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED S...

METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CE...

THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TR...

ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES

VERTICALLY-STRAINED SILICON DEVICE FOR USE WITH A PERPENDICULAR MAG...

CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL...