Carlo Riva

Person

Monza, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Flash EEPROM with integrated device for limiting the erase source v...
- Patent number 6,507,067
- Issue date Jan 14, 2003
- STMicroelectronics S.r.l.
- Lorenzo Fratin
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing process for making single polysilicon level flash EEP...
- Patent number 6,355,523
- Issue date Mar 12, 2002
- STMicroelectronics S.r.l.
- Alfonso Maurelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HV transistor structure and corresponding manufacturing method
- Patent number 6,278,163
- Issue date Aug 21, 2001
- STMicroelctronics S.r.l.
- Federico Pio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM memory cell with a single level of polysilicon programmable...
- Patent number RE37308
- Issue date Aug 7, 2001
- STMicroelectronics S.r.l.
- Paolo G. Cappelletti
- 257 - Active solid-state devices
Information Patent Grant
Process for forming an integrated circuit comprising non-volatile m...
- Patent number 6,248,630
- Issue date Jun 19, 2001
- SGS-Thomson Microelectronics S.r.l.
- Cesare Clementi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an edge structure to seal integrated electronic...
- Patent number 6,210,994
- Issue date Apr 3, 2001
- STMicroelectronics S.r.l.
- Camilla Calegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an edge structure to seal integrated electronic...
- Patent number 6,057,591
- Issue date May 2, 2000
- SGS Thomson Microelectronics S.r.l.
- Camilla Calegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an integrated circuit comprising non-volatile m...
- Patent number 6,004,847
- Issue date Dec 21, 1999
- SGS Thomson Microelectronics S.r.l.
- Cesare Clementi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage-resistant MOS transistor, and corresponding manufactur...
- Patent number 5,977,591
- Issue date Nov 2, 1999
- SGS Thomson Microelectronics S.r.l.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single polysilicon level flash EEPROM cell and manufacturing proces...
- Patent number 5,936,276
- Issue date Aug 10, 1999
- STMicroelectronics, S.r.l.
- Alfonso Maurelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for realizing magnetic circuits in an integrated circuit
- Patent number 5,936,298
- Issue date Aug 10, 1999
- SGS Thomson Microelectronics S.r.l.
- Piero Capocelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making asymmetric nonvolatile memory cell
- Patent number 5,920,776
- Issue date Jul 6, 1999
- SGS-Thomson Microelectronics, S.r.l.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing MOSFET transistors by means of tilted implants
- Patent number 5,915,185
- Issue date Jun 22, 1999
- SGS Thomson Microelectronics S.r.l.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an integrated circuit comprising non-volatile m...
- Patent number 5,856,221
- Issue date Jan 5, 1999
- Cesare Clementi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double polysilicon EEPROM cell and corresponding manufacturing proc...
- Patent number 5,793,673
- Issue date Aug 11, 1998
- SGS Thomson Microelectronics S.r.l.
- Federico Pio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing double polysilicon EEPROM cell and access t...
- Patent number 5,792,670
- Issue date Aug 11, 1998
- SGS Thomson Microelectronics S.r.l.
- Federico Pio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory cell and a method for forming the same
- Patent number 5,712,814
- Issue date Jan 27, 1998
- SGS Thomson Microelectronics S.r.l.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit structure for a memory matrix and corresponding manufacturi...
- Patent number 5,677,871
- Issue date Oct 14, 1997
- SGS Thomson Microelectronics S.r.l.
- Federico Pio
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a matrix of memory cells having control gates
- Patent number 5,597,750
- Issue date Jan 28, 1997
- SGS Thomson Microelectronics S.r.l.
- Federico Pio
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable and programmable read-only memory cells with...
- Patent number 5,553,017
- Issue date Sep 3, 1996
- SGS Thomson Microelectronics S.r.l.
- Paolo Ghezzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making thin oxide portions consisting of gate and tunnel...
- Patent number 5,527,728
- Issue date Jun 18, 1996
- SGS Thomson Microelectronics S.r.l.
- Paolo Ghezzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel single polysilicon level EPROM cell
- Patent number 5,479,367
- Issue date Dec 26, 1995
- SGS-Thomson Microelectronics S.r.L.
- Alfonso Maurelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making thin oxide portions particularly in electrically e...
- Patent number 5,393,684
- Issue date Feb 28, 1995
- SGS Thomson Microelectronics S.r.l.
- Paolo Ghezzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable and programmable read-only memory cells with...
- Patent number 5,367,483
- Issue date Nov 22, 1994
- SGS Thomson Microelectronics S.r.l.
- Paolo Ghezzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the manufacture of a component to limit the programming...
- Patent number 5,322,803
- Issue date Jun 21, 1994
- SGS-Thomson Microelelctronics s.r.l.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for obtaining an N-channel single polysilicon level EPROM c...
- Patent number 5,307,312
- Issue date Apr 26, 1994
- SGS-Thomson Microelectronics S.r.L.
- Alfonso Maurelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing EEPROM memory cells having a single level...
- Patent number 5,132,239
- Issue date Jul 21, 1992
- SGS Thomson Microelectronics S.r.l.
- Paolo Ghezzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM memory cell with improved protection against errors due to c...
- Patent number 5,107,461
- Issue date Apr 21, 1992
- SGS-Thomson Microelectronics S.r.l.
- Carlo Riva
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for obtaining high-voltage N channel transistors particular...
- Patent number 5,086,008
- Issue date Feb 4, 1992
- SGS Thomson Microelectronics S.r.l.
- Carlo Riva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reference cell for reading EEPROM memory devices
- Patent number 5,081,610
- Issue date Jan 14, 1992
- SGS Thomson Microelectronics S.r.l.
- Marco Olivo
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER
- Publication number 20240332365
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...
- Publication number 20240332011
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming an integrated circuit comprising non-volatile m...
- Publication number 20030015753
- Publication date Jan 23, 2003
- CESARE CLEMENTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING AN INTEGRATED CIRCUIT COMPRISING NON-VOLATILE M...
- Publication number 20020000636
- Publication date Jan 3, 2002
- CESARE CLEMENTI
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Flash EEPROM with integrated device for limiting the erase source v...

Manufacturing process for making single polysilicon level flash EEP...

HV transistor structure and corresponding manufacturing method

EEPROM memory cell with a single level of polysilicon programmable...

Process for forming an integrated circuit comprising non-volatile m...

Process for forming an edge structure to seal integrated electronic...

Process for forming an edge structure to seal integrated electronic...

Process for forming an integrated circuit comprising non-volatile m...

High-voltage-resistant MOS transistor, and corresponding manufactur...

Single polysilicon level flash EEPROM cell and manufacturing proces...

Method for realizing magnetic circuits in an integrated circuit

Method of making asymmetric nonvolatile memory cell

Method of producing MOSFET transistors by means of tilted implants

Process for forming an integrated circuit comprising non-volatile m...

Double polysilicon EEPROM cell and corresponding manufacturing proc...

Method of manufacturing double polysilicon EEPROM cell and access t...

Nonvolatile memory cell and a method for forming the same

Circuit structure for a memory matrix and corresponding manufacturi...

Method of manufacturing a matrix of memory cells having control gates

Electrically erasable and programmable read-only memory cells with...

Method of making thin oxide portions consisting of gate and tunnel...

N-channel single polysilicon level EPROM cell

Method of making thin oxide portions particularly in electrically e...

Electrically erasable and programmable read-only memory cells with...

Process for the manufacture of a component to limit the programming...

Process for obtaining an N-channel single polysilicon level EPROM c...

Process for manufacturing EEPROM memory cells having a single level...

EEPROM memory cell with improved protection against errors due to c...

Process for obtaining high-voltage N channel transistors particular...

Reference cell for reading EEPROM memory devices

Patents Applicationslast 30 patents

LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

Process for forming an integrated circuit comprising non-volatile m...

PROCESS FOR FORMING AN INTEGRATED CIRCUIT COMPRISING NON-VOLATILE M...