Chunlin Liang

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thermal conducting trench in a semiconductor structure
- Patent number 7,223,992
- Issue date May 29, 2007
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal gate electrode technology
- Patent number 7,187,044
- Issue date Mar 6, 2007
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal conducting trench in a semiconductor structure and method f...
- Patent number 7,067,406
- Issue date Jun 27, 2006
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated junction structure and method of manufacture
- Patent number 7,045,468
- Issue date May 16, 2006
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET gate electrodes having performance tuned work functions and...
- Patent number 7,022,559
- Issue date Apr 4, 2006
- Intel Corporation
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric constant metal oxide gate dielectrics
- Patent number 6,998,357
- Issue date Feb 14, 2006
- Intel Corporation
- Gang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with MOSFETS having bi-layer metal gate electrodes
- Patent number 6,879,009
- Issue date Apr 12, 2005
- Intel Corporation
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOSFET gate electrodes with tuned work function
- Patent number 6,794,232
- Issue date Sep 21, 2004
- Intel Corporation
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for tuning a work function for MOSFET gate electrodes
- Patent number 6,790,731
- Issue date Sep 14, 2004
- Intel Corporation
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip-chip on flex for high performance packaging applications
- Patent number 6,743,664
- Issue date Jun 1, 2004
- Intel Corporation
- Chunlin Liang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of making integrated circuit with MOSFETs having bi-layer me...
- Patent number 6,696,333
- Issue date Feb 24, 2004
- Intel Corporation
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric constant metal oxide gate dielectrics
- Patent number 6,689,702
- Issue date Feb 10, 2004
- Intel Corporation
- Gang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated junction structure for a MOSFET
- Patent number 6,642,557
- Issue date Nov 4, 2003
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal conducting trench in a seminconductor structure and method...
- Patent number 6,624,045
- Issue date Sep 23, 2003
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric MOSFET using spacer gate technique
- Patent number 6,605,845
- Issue date Aug 12, 2003
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active interposer technology for high performance CMOS packaging ap...
- Patent number 6,600,364
- Issue date Jul 29, 2003
- Intel Corporation
- Chunlin Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
High dielectric constant metal oxide gate dielectrics
- Patent number 6,528,856
- Issue date Mar 4, 2003
- Intel Corporation
- Gang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal gates and a process for implementation
- Patent number 6,492,217
- Issue date Dec 10, 2002
- Intel Corporation
- Gang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making active interposer for high performance packaging...
- Patent number 6,461,895
- Issue date Oct 8, 2002
- Intel Corporation
- Chunlin Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Work function tuning for MOSFET gate electrodes
- Patent number 6,373,111
- Issue date Apr 16, 2002
- Intel Corporation
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip-chip on flex for high performance packaging applications
- Patent number 6,365,962
- Issue date Apr 2, 2002
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic threshold voltage device and methods for fabricating dynami...
- Patent number 6,362,078
- Issue date Mar 26, 2002
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a complementary metal gate electrode technology
- Patent number 6,265,258
- Issue date Jul 24, 2001
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal conducting trench in a semiconductor structure and method f...
- Patent number 6,222,254
- Issue date Apr 24, 2001
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method employing silicon nitride spacers for making an integrated c...
- Patent number 6,207,541
- Issue date Mar 27, 2001
- Intel Corporation
- Siddhartha Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned process for making asymmetric MOSFET using spacer gate...
- Patent number 6,180,502
- Issue date Jan 30, 2001
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal gates and a process for implementation
- Patent number 6,166,417
- Issue date Dec 26, 2000
- Intel Corporation
- Gang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning polysilicon gate layer based on a photodefina...
- Patent number 6,133,128
- Issue date Oct 17, 2000
- Intel Corporation
- Siddhartha Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a complementary metal gate electrode technology
- Patent number 6,130,123
- Issue date Oct 10, 2000
- Intel Corporation
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating next-to-minimum-size transistor gate using ma...
- Patent number 6,022,815
- Issue date Feb 8, 2000
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Thermal conducting trench in a semiconductor structure
- Publication number 20060121710
- Publication date Jun 8, 2006
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High dielectric constant metal oxide gate dielectrics
- Publication number 20050087820
- Publication date Apr 28, 2005
- Gang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with MOSFETS having bi-layer metal gate electord...
- Publication number 20040065903
- Publication date Apr 8, 2004
- Intel Corporation
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated junction structure and method of manufacture
- Publication number 20040038533
- Publication date Feb 26, 2004
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal conducting trench in a semiconductor structure and method f...
- Publication number 20040022102
- Publication date Feb 5, 2004
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a thermal conducting trench in a semiconductor s...
- Publication number 20040018706
- Publication date Jan 29, 2004
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work function tuning for mosfet gate electrodes
- Publication number 20030151074
- Publication date Aug 14, 2003
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET gate electrodes having performance tuned work functions and...
- Publication number 20030146479
- Publication date Aug 7, 2003
- Intel Corporation
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High dielectric constant metal oxide gate dielectrics
- Publication number 20030075740
- Publication date Apr 24, 2003
- Gang Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work function tuning for MOSFET gate electrodes
- Publication number 20020106858
- Publication date Aug 8, 2002
- Jun-Fei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary metal gate electrode technology
- Publication number 20020096724
- Publication date Jul 25, 2002
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flip-chip on flex for high performance packaging applications
- Publication number 20020081774
- Publication date Jun 27, 2002
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET GATE ELECTRODES HAVING PERFORMANCE TUNED WORK FUNCTIONS AND...
- Publication number 20020008257
- Publication date Jan 24, 2002
- JOHN P. BARNAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal conducting trench in a semiconductor structure and method f...
- Publication number 20010035578
- Publication date Nov 1, 2001
- Chunlin Liang
- H01 - BASIC ELECTRIC ELEMENTS

Chunlin Liang

Person

Patents Grantslast 30 patents

Thermal conducting trench in a semiconductor structure

Complementary metal gate electrode technology

Thermal conducting trench in a semiconductor structure and method f...

Isolated junction structure and method of manufacture

MOSFET gate electrodes having performance tuned work functions and...

High dielectric constant metal oxide gate dielectrics

Integrated circuit with MOSFETS having bi-layer metal gate electrodes

Method of making MOSFET gate electrodes with tuned work function

Method for tuning a work function for MOSFET gate electrodes

Flip-chip on flex for high performance packaging applications

Method of making integrated circuit with MOSFETs having bi-layer me...

High dielectric constant metal oxide gate dielectrics

Isolated junction structure for a MOSFET

Thermal conducting trench in a seminconductor structure and method...

Asymmetric MOSFET using spacer gate technique

Active interposer technology for high performance CMOS packaging ap...

High dielectric constant metal oxide gate dielectrics

Complementary metal gates and a process for implementation

Process for making active interposer for high performance packaging...

Work function tuning for MOSFET gate electrodes

Flip-chip on flex for high performance packaging applications

Dynamic threshold voltage device and methods for fabricating dynami...

Method for making a complementary metal gate electrode technology

Thermal conducting trench in a semiconductor structure and method f...

Method employing silicon nitride spacers for making an integrated c...

Self-aligned process for making asymmetric MOSFET using spacer gate...

Complementary metal gates and a process for implementation

Method for patterning polysilicon gate layer based on a photodefina...

Method for making a complementary metal gate electrode technology

Method of fabricating next-to-minimum-size transistor gate using ma...

Patents Applicationslast 30 patents

Thermal conducting trench in a semiconductor structure

High dielectric constant metal oxide gate dielectrics

Integrated circuit with MOSFETS having bi-layer metal gate electord...

Isolated junction structure and method of manufacture

Thermal conducting trench in a semiconductor structure and method f...

Method for forming a thermal conducting trench in a semiconductor s...

Work function tuning for mosfet gate electrodes

MOSFET gate electrodes having performance tuned work functions and...

High dielectric constant metal oxide gate dielectrics

Work function tuning for MOSFET gate electrodes

Complementary metal gate electrode technology

Flip-chip on flex for high performance packaging applications

MOSFET GATE ELECTRODES HAVING PERFORMANCE TUNED WORK FUNCTIONS AND...

Thermal conducting trench in a semiconductor structure and method f...