Dennis R. Wilson

Person

Woodland Park, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Column decoder configuration for a 1T/1C memory
- Patent number 6,856,573
- Issue date Feb 15, 2005
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier configuration for a 1T/1C ferroelectric memory
- Patent number 6,560,137
- Issue date May 6, 2003
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference cell configuration for a 1T/1C ferroelectric memory
- Patent number 6,252,793
- Issue date Jun 26, 2001
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
CMOS preferred state power-up latch
- Patent number 6,060,919
- Issue date May 9, 2000
- Ramtron International Corporation
- Dennis R. Wilson
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
- Patent number 6,002,634
- Issue date Dec 14, 1999
- Ramtron International Corporation
- Dennis R. Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage bootstrapping circuit
- Patent number 5,999,461
- Issue date Dec 7, 1999
- Ramtron International Corporation
- Donald J. Verhaeghe
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference cell configuration for a 1T/1C ferroelectric memory
- Patent number 5,986,919
- Issue date Nov 16, 1999
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier configuration for a 1T/1C ferroelectric memory
- Patent number 5,969,980
- Issue date Oct 19, 1999
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference cell for a 1T/1C ferroelectric memory
- Patent number 5,956,266
- Issue date Sep 21, 1999
- Ramtron International Corporation
- Dennis R. Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making integration of high value capacitor with ferroelec...
- Patent number 5,909,624
- Issue date Jun 1, 1999
- Ramtron International Corporation
- Michael W. Yeager
- G11 - INFORMATION STORAGE
Information Patent Grant
Column decoder configuration for a 1T/1C ferroelectric memory
- Patent number 5,892,728
- Issue date Apr 6, 1999
- Ramtron International Corporation
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing methodology for a 1T/1C ferroelectric memory
- Patent number 5,880,989
- Issue date Mar 9, 1999
- Ramtron International Corporation
- Dennis R. Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage reference for a ferroelectric 1T/1C based memory
- Patent number 5,822,237
- Issue date Oct 13, 1998
- Ramtron International Corporation
- Dennis R. Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Bootstrapping circuit utilizing a ferroelectric capacitor
- Patent number 5,774,392
- Issue date Jun 30, 1998
- Ramtron International Corporation
- William F. Kraus
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration of high value capacitor with ferroelectric memory
- Patent number 5,608,246
- Issue date Mar 4, 1997
- Ramtron International Corporation
- Michael W. Yeager
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric nonvolatile random access memory utilizing self-boots...
- Patent number 5,598,366
- Issue date Jan 28, 1997
- Ramtron International Corporation
- William F. Kraus
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage reference for a ferroelectric 1T/1C based memory
- Patent number 5,572,459
- Issue date Nov 5, 1996
- Ramtron International Corporation
- Dennis R. Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory sensing scheme using bit lines precharged to a...
- Patent number 5,530,668
- Issue date Jun 25, 1996
- Ramtron International Corporation
- Wen-Foo Chern
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Reference cell configuration for a 1T/1C ferroelectric memory
- Publication number 20050122765
- Publication date Jun 9, 2005
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory
- Publication number 20040119105
- Publication date Jun 24, 2004
- Dennis Robert Wilson
- G11 - INFORMATION STORAGE
Information Patent Application
Column decoder configuration for a 1T/1C memory
- Publication number 20030210584
- Publication date Nov 13, 2003
- Judith E. Allen
- G11 - INFORMATION STORAGE
Information Patent Application
Memory cell configuration for a 1T/1C ferroelectric memory
- Publication number 20010033510
- Publication date Oct 25, 2001
- Judith E. Allen
- G11 - INFORMATION STORAGE

Dennis R. Wilson

Person

Patents Grantslast 30 patents

Column decoder configuration for a 1T/1C memory

Sense amplifier configuration for a 1T/1C ferroelectric memory

Reference cell configuration for a 1T/1C ferroelectric memory

CMOS preferred state power-up latch

Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory

Low voltage bootstrapping circuit

Reference cell configuration for a 1T/1C ferroelectric memory

Sense amplifier configuration for a 1T/1C ferroelectric memory

Reference cell for a 1T/1C ferroelectric memory

Method of making integration of high value capacitor with ferroelec...

Column decoder configuration for a 1T/1C ferroelectric memory

Sensing methodology for a 1T/1C ferroelectric memory

Voltage reference for a ferroelectric 1T/1C based memory

Bootstrapping circuit utilizing a ferroelectric capacitor

Integration of high value capacitor with ferroelectric memory

Ferroelectric nonvolatile random access memory utilizing self-boots...

Voltage reference for a ferroelectric 1T/1C based memory

Ferroelectric memory sensing scheme using bit lines precharged to a...

Patents Applicationslast 30 patents

Reference cell configuration for a 1T/1C ferroelectric memory

Ferroelectric memory

Column decoder configuration for a 1T/1C memory

Memory cell configuration for a 1T/1C ferroelectric memory