Donald M. Kenney

Person

Shelburne, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective removal of vertical portions of a film
- Patent number 6,139,647
- Issue date Oct 31, 2000
- International Business Machines Corporation
- Michael David Armacost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked devices
- Patent number 6,020,250
- Issue date Feb 1, 2000
- International Business Machines Corporation
- Donald McAlpine Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanical supports for very thin stacked capacitor plates
- Patent number 5,930,640
- Issue date Jul 27, 1999
- International Business Machines Corporation
- Donald McAlpine Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective material deposition on one side of raised or r...
- Patent number 5,885,425
- Issue date Mar 23, 1999
- International Business Machines Corporation
- Julian Juu-Chuan Hsieh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming stacked devices
- Patent number 5,801,089
- Issue date Sep 1, 1998
- International Business Machines Corporation
- Donald McAlpine Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of vertical portions of a film
- Patent number 5,767,017
- Issue date Jun 16, 1998
- International Business Machines Corporation
- Michael David Armacost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro mask comprising agglomerated material
- Patent number 5,766,968
- Issue date Jun 16, 1998
- International Business Machines Corporation
- Michael Armacost
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a memory cell in a substrate trench
- Patent number 5,744,386
- Issue date Apr 28, 1998
- International Business Machines Corporation
- Donald McAlpine Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor trench capacitor cell having a buried strap
- Patent number 5,719,080
- Issue date Feb 17, 1998
- International Business Machines Corporation
- Donald M. Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI fabrication method
- Patent number 5,710,057
- Issue date Jan 20, 1998
- Donald M. Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall strap
- Patent number 5,691,549
- Issue date Nov 25, 1997
- International Business Machines Corporation
- Chung Hon Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor precharge structure and leakage shield
- Patent number 5,684,314
- Issue date Nov 4, 1997
- Donald M. Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical precharge structure for DRAM
- Patent number 5,684,313
- Issue date Nov 4, 1997
- Donald M. Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing a narrow angle defined trench in a substrate
- Patent number 5,672,537
- Issue date Sep 30, 1997
- International Business Machines Corporation
- Daniel A. Carl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a polysilicon electrode in a trench
- Patent number 5,656,544
- Issue date Aug 12, 1997
- International Business Machines Corporation
- Albert Stephan Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating vertical epitaxial SOI transistor
- Patent number 5,641,694
- Issue date Jun 24, 1997
- International Business Machines Corporation
- Donald McAlpine Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double dense ferroelectric capacitor cell memory
- Patent number 5,640,030
- Issue date Jun 17, 1997
- International Business Machines Corporation
- Donald McAlpine Kenney
- G11 - INFORMATION STORAGE
Information Patent Grant
Porous silicon trench and capacitor structures
- Patent number 5,635,419
- Issue date Jun 3, 1997
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angle defined trench conductor for a semiconductor device
- Patent number 5,610,441
- Issue date Mar 11, 1997
- International Business Machines Corporation
- Daniel A. Carl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked devices
- Patent number 5,583,368
- Issue date Dec 10, 1996
- International Business Machines Corporation
- Donald M. Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor trench capacitor cell having a buried strap
- Patent number 5,576,566
- Issue date Nov 19, 1996
- International Business Machines Corporation
- Donald M. Kenney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory precharge scheme using spare column
- Patent number 5,532,965
- Issue date Jul 2, 1996
- Donald M. Kenney
- G11 - INFORMATION STORAGE
Information Patent Grant
Sidewall strap
- Patent number 5,521,118
- Issue date May 28, 1996
- International Business Machines Corporation
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon trench and capacitor structures
- Patent number 5,508,542
- Issue date Apr 16, 1996
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming borderless contacts using a removable mandrel
- Patent number 5,466,636
- Issue date Nov 14, 1995
- International Business Machines Corporation
- John E. Cronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro mask comprising agglomerated material
- Patent number 5,466,626
- Issue date Nov 14, 1995
- International Business Machines Corporation
- Michael Armacost
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low charge consumption memory
- Patent number 5,414,656
- Issue date May 9, 1995
- Donald M. Kenney
- G11 - INFORMATION STORAGE
Information Patent Grant
Low temperature plasma oxidation process
- Patent number 5,412,246
- Issue date May 2, 1995
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making shadow RAM cell having a shallow trench EEPROM
- Patent number 5,399,516
- Issue date Mar 21, 1995
- International Business Machines Corporation
- Albert S. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-conformal and oxidizable etch stops for submicron features
- Patent number 5,384,281
- Issue date Jan 24, 1995
- International Business Machines Corporation
- Donald M. Kenney
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE PLATE TRENCH DRAM CELL WITH LIGHTLY DOPED SUBSTRATE
- Publication number 20020005533
- Publication date Jan 17, 2002
- DONALD M. KENNEY
- H01 - BASIC ELECTRIC ELEMENTS

Donald M. Kenney

Person

Patents Grantslast 30 patents

Selective removal of vertical portions of a film

Stacked devices

Mechanical supports for very thin stacked capacitor plates

Method for selective material deposition on one side of raised or r...

Method of forming stacked devices

Selective removal of vertical portions of a film

Micro mask comprising agglomerated material

Method of fabricating a memory cell in a substrate trench

Semiconductor trench capacitor cell having a buried strap

SOI fabrication method

Sidewall strap

Trench capacitor precharge structure and leakage shield

Vertical precharge structure for DRAM

Method for preparing a narrow angle defined trench in a substrate

Process for forming a polysilicon electrode in a trench

Method of fabricating vertical epitaxial SOI transistor

Double dense ferroelectric capacitor cell memory

Porous silicon trench and capacitor structures

Angle defined trench conductor for a semiconductor device

Stacked devices

Semiconductor trench capacitor cell having a buried strap

Memory precharge scheme using spare column

Sidewall strap

Porous silicon trench and capacitor structures

Method of forming borderless contacts using a removable mandrel

Micro mask comprising agglomerated material

Low charge consumption memory

Low temperature plasma oxidation process

Method of making shadow RAM cell having a shallow trench EEPROM

Non-conformal and oxidizable etch stops for submicron features

Patents Applicationslast 30 patents

SUBSTRATE PLATE TRENCH DRAM CELL WITH LIGHTLY DOPED SUBSTRATE