Fu-Tai Liou

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating interlevel contacts of aluminum/refractory m...
- Patent number 6,617,242
- Issue date Sep 9, 2003
- STMicroelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact via structure and method
- Patent number 6,455,412
- Issue date Sep 24, 2002
- STMicroelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum contact structure for integrated circuits
- Patent number 6,433,435
- Issue date Aug 13, 2002
- STMicroelectronics, Inc.
- Yih-Shung Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a metal contact
- Patent number 6,287,963
- Issue date Sep 11, 2001
- STMicroelectronics, Inc.
- Fusen E. Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing an aluminum stacked contact/via for multilayer
- Patent number 6,271,137
- Issue date Aug 7, 2001
- STMicroelectronics, Inc.
- Fu-Tai Liou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interlevel contact including aluminum-refractory metal alloy formed...
- Patent number 6,242,811
- Issue date Jun 5, 2001
- STMicroelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming submicron contacts and vias in an integrated circuit
- Patent number 6,180,517
- Issue date Jan 30, 2001
- STMicroelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming submicron contacts and vias in an integrated circuit
- Patent number 6,111,319
- Issue date Aug 29, 2000
- STMicroelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming submicron contacts and vias in an integrated circuit
- Patent number 6,033,980
- Issue date Mar 7, 2000
- STMicroelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an aluminum contact
- Patent number 5,976,969
- Issue date Nov 2, 1999
- STMicroelectronics, Inc.
- Yih-Shung Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a metal contact
- Patent number 5,930,673
- Issue date Jul 27, 1999
- STMicroelectronics, Inc.
- Fusen E. Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Submicron contacts and vias in an integrated circuit
- Patent number 5,847,460
- Issue date Dec 8, 1998
- STMicroelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming vias
- Patent number 5,847,457
- Issue date Dec 8, 1998
- STMicroelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices
- Patent number 5,847,465
- Issue date Dec 8, 1998
- STMicroelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact via structure
- Patent number 5,841,195
- Issue date Nov 24, 1998
- STMicroelectronics, Inc.
- Yih-Shung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an aluminum contact through an insulating layer
- Patent number 5,658,828
- Issue date Aug 19, 1997
- SGS-Thomson Microelectronics, Inc.
- Yih-Shung Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Resistive load for integrated circuit devices
- Patent number 5,594,269
- Issue date Jan 14, 1997
- SGS-Thomson Microelectronics, Inc.
- Charles R. Spinner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vias
- Patent number 5,593,921
- Issue date Jan 14, 1997
- SGS-Thomson Microelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect process for integrated circuits
- Patent number RE35111
- Issue date Dec 5, 1995
- SGS-Thomson Microelectronics, Inc.
- Fu-Tai Liou
- 437 -
Information Patent Grant
Method for fabricating a polycrystalline silicon resistive load ele...
- Patent number 5,462,894
- Issue date Oct 31, 1995
- SGS-Thomson Microelectronics, Inc.
- Charles R. Spinner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sloped spacer for mos field effect devices
- Patent number 5,424,571
- Issue date Jun 13, 1995
- SGS-Thomson Microelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with planarized shallow trench isolation
- Patent number 5,410,176
- Issue date Apr 25, 1995
- SGS-Thomson Microelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming local interconnect for integrated circuits
- Patent number 5,391,520
- Issue date Feb 21, 1995
- SGS-Thomson Microelectronics, Inc.
- Fusen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metallization with zero contact enclosure requir...
- Patent number 5,371,410
- Issue date Dec 6, 1994
- SGS-Thomson Microelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a contact/VIA
- Patent number 5,371,041
- Issue date Dec 6, 1994
- SGS-Thomson Microelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect for integrated circuits
- Patent number 5,349,229
- Issue date Sep 20, 1994
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect for integrated circuits
- Patent number 5,319,245
- Issue date Jun 7, 1994
- SGS-Thomson Microelectronics, Inc.
- Fusen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming field oxide regions
- Patent number 5,286,672
- Issue date Feb 15, 1994
- SGS-Thomson Microelectronics, Inc.
- Robert L. Hodges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metallization with zero contact enclosure requir...
- Patent number 5,270,254
- Issue date Dec 14, 1993
- SGS-Thomson Microelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a polycrystalline silicon resistive load ele...
- Patent number 5,268,325
- Issue date Dec 7, 1993
- SGS-Thomson Microelectronics, Inc.
- Charles R. Spinner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING AN ALUMINUM CONTACT
- Publication number 20020000653
- Publication date Jan 3, 2002
- YIH-SHUNG LIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Fu-Tai Liou

Person

Patents Grantslast 30 patents

Method for fabricating interlevel contacts of aluminum/refractory m...

Semiconductor contact via structure and method

Aluminum contact structure for integrated circuits

Method for forming a metal contact

Method of producing an aluminum stacked contact/via for multilayer

Interlevel contact including aluminum-refractory metal alloy formed...

Method of forming submicron contacts and vias in an integrated circuit

Method of forming submicron contacts and vias in an integrated circuit

Method of forming submicron contacts and vias in an integrated circuit

Method for forming an aluminum contact

Method for forming a metal contact

Submicron contacts and vias in an integrated circuit

Structure and method of forming vias

Contacts for semiconductor devices

Semiconductor contact via structure

Method for forming an aluminum contact through an insulating layer

Resistive load for integrated circuit devices

Method of forming vias

Local interconnect process for integrated circuits

Method for fabricating a polycrystalline silicon resistive load ele...

Sloped spacer for mos field effect devices

Integrated circuit with planarized shallow trench isolation

Method for forming local interconnect for integrated circuits

Integrated circuit metallization with zero contact enclosure requir...

Method for forming a contact/VIA

Local interconnect for integrated circuits

Local interconnect for integrated circuits

Method for forming field oxide regions

Integrated circuit metallization with zero contact enclosure requir...

Method for fabricating a polycrystalline silicon resistive load ele...

Patents Applicationslast 30 patents

METHOD FOR FORMING AN ALUMINUM CONTACT