HaiHong Wang

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,580,660
- Issue date Nov 12, 2013
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 8,334,181
- Issue date Dec 18, 2012
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,222,680
- Issue date Jul 17, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gate semiconductor device with gate contacts formed adjacent...
- Patent number 8,217,450
- Issue date Jul 10, 2012
- GLOBALFOUNDRIES, INC.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully silicided gate structure for FinFET devices
- Patent number 8,008,136
- Issue date Aug 30, 2011
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 7,781,810
- Issue date Aug 24, 2010
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolation regions for integrated circuits
- Patent number 7,713,834
- Issue date May 11, 2010
- GLOBALFOUNDRIES Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained substrate
- Patent number 7,701,019
- Issue date Apr 20, 2010
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with multiple fin structures
- Patent number 7,679,134
- Issue date Mar 16, 2010
- GlobalFoundries
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversed T-shaped finfet
- Patent number 7,541,267
- Issue date Jun 2, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for forming multiple fin structures using metal...
- Patent number 7,498,225
- Issue date Mar 3, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolation regions for integrated circuits
- Patent number 7,422,961
- Issue date Sep 9, 2008
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully depleted strained semiconductor on insulator transistor and m...
- Patent number 7,312,125
- Issue date Dec 25, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device
- Patent number 7,279,735
- Issue date Oct 9, 2007
- Spansion LLC
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective channel implantation for forming semiconductor devices wi...
- Patent number 7,262,104
- Issue date Aug 28, 2007
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-gate and gate around MOSFET devices and methods for making same
- Patent number 7,259,425
- Issue date Aug 21, 2007
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate semiconductor device having a metal gate
- Patent number 7,256,455
- Issue date Aug 14, 2007
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversed T-shaped FinFET
- Patent number 7,250,645
- Issue date Jul 31, 2007
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for doping structures in FinFET devices
- Patent number 7,235,436
- Issue date Jun 26, 2007
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow-body damascene tri-gate FinFET
- Patent number 7,186,599
- Issue date Mar 6, 2007
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a fin structure
- Patent number 7,179,692
- Issue date Feb 20, 2007
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOSFET having improved source/drain extension dopa...
- Patent number 7,170,084
- Issue date Jan 30, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 7,148,526
- Issue date Dec 12, 2006
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step chemical mechanical polishing of a gate area in a FinFET
- Patent number 7,125,776
- Issue date Oct 24, 2006
- Advanced Micro Devices, Inc.
- Krishnashree Achuthan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smooth fin topology in a FinFET device
- Patent number 7,112,847
- Issue date Sep 26, 2006
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying carrier mobility in semiconductor devices to achieve overal...
- Patent number 7,095,065
- Issue date Aug 22, 2006
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon PMOS having silicon germanium source/drain extensi...
- Patent number 7,071,065
- Issue date Jul 4, 2006
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing metal gate MOSFET with strained channel
- Patent number 7,041,601
- Issue date May 9, 2006
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene tri-gate FinFET
- Patent number 7,041,542
- Issue date May 9, 2006
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow body raised source/drain metal gate MOSFET
- Patent number 7,034,361
- Issue date Apr 25, 2006
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME
- Publication number 20120252193
- Publication date Oct 4, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ISOLATION REGIONS FOR INTEGRATED CIRCUITS
- Publication number 20090047770
- Publication date Feb 19, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES
- Publication number 20060177998
- Publication date Aug 10, 2006
- Harrity & Snyder, L.L.P.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tensile strained substrate
- Publication number 20060138479
- Publication date Jun 29, 2006
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Damascene tri-gate FinFET
- Publication number 20050153492
- Publication date Jul 14, 2005
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Narrow-body damascene tri-gate FinFET
- Publication number 20050153485
- Publication date Jul 14, 2005
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE
- Publication number 20050121716
- Publication date Jun 9, 2005
- Wiley Eugene Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-step chemical mechanical polishing of a gate area in a FinFET
- Publication number 20050118824
- Publication date Jun 2, 2005
- Krishnashree Achuthan
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Self aligned damascene gate
- Publication number 20050104091
- Publication date May 19, 2005
- Cyrus E. Tabery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation (STI) region with high-K liner and method...
- Publication number 20050073022
- Publication date Apr 7, 2005
- Olov B. Karlsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual silicon layer for chemical mechanical polishing planarization
- Publication number 20050056845
- Publication date Mar 17, 2005
- Krishnashree Achuthan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARYING CARRIER MOBILITY IN SEMICONDUCTOR DEVICES TO ACHIEVE OVERAL...
- Publication number 20050029603
- Publication date Feb 10, 2005
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device having a U-shaped ga...
- Publication number 20050006666
- Publication date Jan 13, 2005
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP CHEMICAL MECHANICAL POLISHING OF A GATE AREA IN A FINFET
- Publication number 20040253775
- Publication date Dec 16, 2004
- Krishnashree Achuthan
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Narrow fin finfet
- Publication number 20040197975
- Publication date Oct 7, 2004
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained channel FinFET
- Publication number 20040195627
- Publication date Oct 7, 2004
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming structures in finfet devices
- Publication number 20040198031
- Publication date Oct 7, 2004
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation for strained silicon processes
- Publication number 20040180509
- Publication date Sep 16, 2004
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED CHANNEL FINFET
- Publication number 20040145019
- Publication date Jul 29, 2004
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tri-gate and gate around MOSFET devices and methods for making same
- Publication number 20040145000
- Publication date Jul 29, 2004
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor with tensile strained substrate and method of making...
- Publication number 20040142545
- Publication date Jul 22, 2004
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate semiconductor device having separate gates
- Publication number 20040126975
- Publication date Jul 1, 2004
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate semiconductor device having a metal gate
- Publication number 20040110097
- Publication date Jun 10, 2004
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two transistor nor device
- Publication number 20040100306
- Publication date May 27, 2004
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planarizing gate material to improve gate critical dimension in sem...
- Publication number 20040092062
- Publication date May 13, 2004
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a thick strained silicon layer and meth...
- Publication number 20040087114
- Publication date May 6, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double and triple gate MOSFET devices and methods for making same
- Publication number 20040075122
- Publication date Apr 22, 2004
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a U-shaped gate structure
- Publication number 20040075121
- Publication date Apr 22, 2004
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Finfet having improved carrier mobility and method of its formation
- Publication number 20040061178
- Publication date Apr 1, 2004
- Advanced Micro Devices Inc
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfets incorporating nickel germanosilicided gate and methods for...
- Publication number 20040061191
- Publication date Apr 1, 2004
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS

HaiHong Wang

Person

Patents Grantslast 30 patents

Double and triple gate MOSFET devices and methods for making same

Germanium MOSFET devices and methods for making same

Double and triple gate MOSFET devices and methods for making same

Double-gate semiconductor device with gate contacts formed adjacent...

Fully silicided gate structure for FinFET devices

Germanium MOSFET devices and methods for making same

Method of forming isolation regions for integrated circuits

Tensile strained substrate

FinFET device with multiple fin structures

Reversed T-shaped finfet

Systems and methods for forming multiple fin structures using metal...

Method of forming isolation regions for integrated circuits

Fully depleted strained semiconductor on insulator transistor and m...

Flash memory device

Selective channel implantation for forming semiconductor devices wi...

Tri-gate and gate around MOSFET devices and methods for making same

Double gate semiconductor device having a metal gate

Reversed T-shaped FinFET

Method for doping structures in FinFET devices

Narrow-body damascene tri-gate FinFET

Method of manufacturing a semiconductor device having a fin structure

Strained silicon MOSFET having improved source/drain extension dopa...

Germanium MOSFET devices and methods for making same

Multi-step chemical mechanical polishing of a gate area in a FinFET

Smooth fin topology in a FinFET device

Varying carrier mobility in semiconductor devices to achieve overal...

Strained silicon PMOS having silicon germanium source/drain extensi...

Method of manufacturing metal gate MOSFET with strained channel

Damascene tri-gate FinFET

Narrow body raised source/drain metal gate MOSFET

Patents Applicationslast 30 patents

DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME

METHOD OF FORMING ISOLATION REGIONS FOR INTEGRATED CIRCUITS

FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES

Tensile strained substrate

Damascene tri-gate FinFET

Narrow-body damascene tri-gate FinFET

FLASH MEMORY DEVICE

Multi-step chemical mechanical polishing of a gate area in a FinFET

Self aligned damascene gate

Shallow trench isolation (STI) region with high-K liner and method...

Dual silicon layer for chemical mechanical polishing planarization

VARYING CARRIER MOBILITY IN SEMICONDUCTOR DEVICES TO ACHIEVE OVERAL...

Method of manufacturing a semiconductor device having a U-shaped ga...

MULTI-STEP CHEMICAL MECHANICAL POLISHING OF A GATE AREA IN A FINFET

Narrow fin finfet

Strained channel FinFET

Method for forming structures in finfet devices

Shallow trench isolation for strained silicon processes

STRAINED CHANNEL FINFET

Tri-gate and gate around MOSFET devices and methods for making same

Semiconductor with tensile strained substrate and method of making...

Double gate semiconductor device having separate gates

Double gate semiconductor device having a metal gate

Two transistor nor device

Planarizing gate material to improve gate critical dimension in sem...

Semiconductor device having a thick strained silicon layer and meth...

Double and triple gate MOSFET devices and methods for making same

Semiconductor device having a U-shaped gate structure

Finfet having improved carrier mobility and method of its formation

Mosfets incorporating nickel germanosilicided gate and methods for...